FJC690TF

FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC790 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 6 9 0 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 2 A PC Power Dissipation 0.5 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics T Symbol a= 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 100μA, IE = 0 45 V BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 45 V BVEBO Emitter-Base Breakdown Voltage IE = 100μA, IC = 0 5 ICEO Collector Cut-off Current VCE = 35V, VB = 0 IEBO Emitter Cut-off Current VEB = 4V, IC = 0 hFE DC Current Gain VCE = 2V, IC = 100mA VCE = 2V, IC = 1mA VCE = 2V, IC = 2mA VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) V 0.1 μA 0.1 μA IC = 0.1A, IB = 0.5mA IC = 1A, IB = 5mA 80 300 mV mV Base-Emitter Saturation Voltage IC = 1A, IB = 10mA 0.9 V VBE(on) Base-Emitter On Voltage VCE = 2V, IC = 1A COB Collector Output Capacitance VCB = 10V, IE = 0, f = 1MHz ©2007 Fairchild Semiconductor Corporation FJC690 Rev. D 1 500 400 150 0.85 20 V pF www.fairchildsemi.com FJC690 NPN Epitaxial Silicon Transistor July 2007 Device Marking Device Package Reel Size Tape Width Quantity 690 FJC690 SOT-89 13” -- 4,000 2 FJC690 Rev. D www.fairchildsemi.com FJC690 NPN Epitaxial Silicon Transistor Package Marking and Ordering Information Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 0 Ta=125 C VCE(SAT)[V], SATURATION VOLTAGE VCE=2V hFE, DC CURRENT GAIN 1000 0 0 Ta=25 C Ta=-40 C 100 10 0.01 0.1 1 IC=20IB 1 0 0 0.1 0 Ta=-40 C 0.01 0.01 10 IC[A], COLLECTOR CURRENT Ta=25 C Ta=125 C 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 3. Power Dissipation vs Ambient Temperature PD - Power Dissipation (W) 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 O Temperature, [ C] 3 FJC690 Rev. D www.fairchildsemi.com FJC690 NPN Epitaxial Silicon Transistor Typical Performance Characteristics FJC690 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters 4 FJC690 Rev. D www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30