FJC790TF

FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y 0 W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter -50 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -2 A PC Power Dissipation 0.5 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics * T Symbol a= 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = -100μA, IE = 0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -40 V BVEBO Emitter-Base Breakdown Voltage IE = -100μA, IC = 0 -5 ICEO Collector Cut-off Current VCE = -35V, VB = 0 IEBO Emitter Cut-off Current VEB = -4V, IC = 0 hFE DC Current Gain VCE = -2V, IC = -10mA VCE = -2V, IC = -500mA VCE = -2V, IC = -1A VCE = -2V, IC = -2A VCE(sat) Collector-Emitter Saturation Voltage IC = -0.5A, IB = -5mA IC = -1A, IB = -10mA IC = -2A, IB = -50mA -250 -350 -450 mV mV mV VBE(sat) Base-Emitter Saturation Voltage IC = -1A, IB = -10mA -0.9 V VBE(on) Base-Emitter On Voltage VCE = -2V, IC = 1A COB Collector Output Capacitance VCB = -10V, IE = 0, f = 1MHz V 300 250 200 150 -0.1 μA -0.1 μA 800 -0.8 20 V pF * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% ©2007 Fairchild Semiconductor Corporation FJC790 Rev. D 1 www.fairchildsemi.com FJC790 PNP Epitaxial Silicon Transistor July 2007 Device Marking Device Package Reel Size Tape Width Quantity 790 FJC790 SOT-89 13” -- 4,000 2 FJC790 Rev. D www.fairchildsemi.com FJC790 PNP Epitaxial Silicon Transistor Package Marking and Ordering Information Figure 1. DC current Gain Figure 2. Collector-Base Capacitance 1000 100 o 75 C Vce=-2V o 125 C V C B = -1 0 V f = 1M H z IE = 0 COb[pF], Capacitance hfe, Current Gain 800 600 400 o -25 C 200 o 25 C 0 -1 -10 -100 10 -1000 -1 -1 0 -1 0 0 V C B [V ], C o lle c to r-B a s e V o lta g e Collector Current, [mA] Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage -700 Ic=10 * Ib o 125 C -80 Vce(sat), Saturation Voltage,[mV] Vce(sat), Saturation Voltage,[mV] -100 o 75 C -60 -40 o 25 C -20 o -25 C -10 -100 -500 o 75 C -400 o 25 C -300 o -25 C -200 -100 -1000 -100 Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter Turn on Voltage -1000 -1000 VCE= -2V o -25 C o -800 -600 o o 125 C 75 C -100 -1000 25 C -800 -600 -400 -10 Collector Current, [mA] o 75 C -100 o 125 C -1000 Collector Current, [mA] 3 FJC790 Rev. D o -25 C o 25 C Vbe(on), Turn on Voltage,[mV] Vbe(sat), Saturation Voltage,[mV] Ic=100 * Ib -10 -1000 Collector Current, [mA] Collector Current, [mA] -400 o 125 C -0 -10 -0 -1 Ic=100 * Ib -600 www.fairchildsemi.com FJC790 PNP Epitaxial Silicon Transistor Typical Performance Characteristics FJC790 PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure 7. Power Dissipation vs Ambient Temperature PD - Power Dissipation (W) 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 O Temperature, [ C] 4 FJC790 Rev. D www.fairchildsemi.com FJC790 PNP Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters 5 FJC790 Rev. D www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30