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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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FJD3305H1
NPN Silicon Transistor
Features
•
•
•
•
•
High Voltage Switch Mode Application
Fast Speed Switching
Wide Safe Operating Area
Suitable for Electronic Ballast Application
Wave Soldering
DPAK
1
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings*
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
TC = 25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation, Ta = 25°C
Tc = 25°C
Junction Temperature
Storage Temperature
Value
Units
700
400
9
4
8
2
1.1
50
150
-65 to 150
V
V
V
A
A
A
W
W
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
RθJA
RθJC
Ta = 25°C unless otherwise noted
Parameter
Value
Units
110
2.0
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
* Device mounted on minimum pad size
Ordering Information
Part Number
Marking
Package
Packing Method
FJD3305H1TM
J3305H1
D-PAK
Tape & Reel
© 2012 Fairchild Semiconductor Corporation
FJD3305H1 Rev. A1
Remarks
www.fairchildsemi.com
1
FJD3305H1 — NPN Silicon Transistor
April 2012
TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
Collector-Base Breakdwon Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain *
700
400
9
VBE(sat)
Base-Emitter Saturation Voltage
fT
Cob
tON
tSTG
tF
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
IC = 500μA, IE = 0
IC = 5mA, IB = 0
IE = 500μA, IC = 0
VCB = 700V, IE = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 4A, IB = 1A
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
VCE = 10V, IC = 0.5A
VCB = 10V, f = 1MHz
VCC = 125V, IC = 2A
IB1 = -IB2 = 0.4A
RL = 62.5Ω
Collector-Emitter Saturation Voltage
Typ.
Max.
1
1
28
40
0.5
0.6
1.0
1.2
1.6
19
8
4
65
0.8
4.0
0.9
Units
V
V
V
μA
μA
V
V
V
V
V
MHz
pF
μs
μs
μs
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
© 2012 Fairchild Semiconductor Corporation
FJD3305H1 Rev. A1
www.fairchildsemi.com
2
FJD3305H1 — NPN Silicon Transistor
Electrical Characteristics*
100
4.5
3.5
3.0
IB = 200mA
2.5
IB = 150mA
2.0
Ta = 125 C
Ta = 75 C
IB = 250mA
IB = 100mA
1.5
IB = 50mA
1.0
O
O
Ta = - 25 C
10
Ta = 25 C
0.5
1
0.01
0.0
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
IC [A], COLLECTOR CUTRRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 2. DC Current Gain
Figure 1. Static Characteristic
10
10
IC = 4 IB
VBE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
VCE = 5V
O
O
IB = 300mA
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
4.0
O
Ta = 125 C
1
O
Ta = 75 C
O
Ta = - 25 C
0.1
O
Ta = 25 C
0.01
0.01
0.1
1
IC = 4 IB
O
Ta = - 25 C
O
Ta = 25 C
1
O
O
0.1
0.01
10
Ta = 75 C
Ta = 125 C
IC [A], COLLECTOR CURRENT
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 4. Base - EmitterSaturation Voltage
Figure 3. Collector- Emitter Saturation Voltage
1 0 0 00
F = 1M H z
C ib
O
Ta = 25 C
1000
CAPACITANCE[pF]
tF & tSTG [μs], SWITCHING TIME
tSTG
tF
O
Ta = 125 C
1 0 00
1 00
C ob
10
100
IB1 = - IB2 = 0.4A
VCC = 125V
1
1
1
10
IC [A], COLLECTOR CURRENT
R E VER SE VO LT AG E[V]
Figure 5. Switching Time
Figure 6. Capacitance
© 2012 Fairchild Semiconductor Corporation
FJD3305H1 Rev. A1
100
www.fairchildsemi.com
3
FJD3305H1 — NPN Silicon Transistor
Typical Performance Characteristics
10
10
VCE(sat) [V], SATURATION VOLTAGE
VBE(OFF)=-9V
IC [A], COLLECTOR CURRENT
VBE(OFF)=-7V
8
VBE(OFF)=-5V
VBE(OFF)=-3V
6
4
VCC=50V, LC=1mH
VBE(OFF)=-5V, IB2=-1.0A
RBB=0.7 Ohms
IC/IB=5
2
VCC=50V, LC=1mH
VBE(OFF)=-5V, IB2=-1.0A
RBB=0.7 Ohms
8
6
Ic/Ib = 4
4
Ic/Ib = 3
2
0
0
0
100
200
300
400
500
600
700
1
800
2
Figure 7. Reverse Biased Safe Operating Area
4
5
6
7
8
Figure 8. Collector- Emitter Saturation Voltage
at RBSOA
60
Ic/Ib = 5
200
3
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Ic/Ib = 4
VCC=50V, LC=1mH
VBE(OFF)=-5V, IB2=-1.0A
RBB=0.7 Ohms
50
PC[W], POWER DISSIPATION
160
Turn-on PW [uS]
Ic/Ib = 5
Ic/Ib = 3
120
80
40
40
30
20
10
0
0
1
2
3
4
5
6
7
0
8
25
IC [A], COLLECTOR CURRENT
50
75
100
125
150
175
o
Tc[ C], CASE TEMPERATURE
Figure 9. Input Pulse width vs Correct current
at RBSOA
Figure 10. Power Derating
Figure 11. RBSOA Test Circuit
© 2012 Fairchild Semiconductor Corporation
FJD3305H1 Rev. A1
www.fairchildsemi.com
4
FJD3305H1 — NPN Silicon Transistor
Typical Performance Characteristics (Continued)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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