FJD5304DTF

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FJD5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit C B D-PAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol E Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 4 A ICP * Collector Current (Pulse) 8 A IB Base Current (DC) 2 A IBP * Base Current (Pulse) 4 A PC Collector Dissipation 30 1.25 W W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C Value Units 99 °C/W Tc = 25°C Ta = 25°C * Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed Thermal Characteristics Symbol Rθja Ta = 25°C unless otherwise noted Parameter Thermal Resistance Junction-Ambient ** ** Device mounted on minimum pad size. © 2010 Fairchild Semiconductor Corporation FJD5304D Rev. A1 www.fairchildsemi.com 1 FJD5304D — High Voltage Fast Switching Transistor July 2010 Device Marking Device J5304D FJD5304DTM D-PAK 13” Dia - 2500 J5304D FJD5304DTF D-PAK 13” Dia - 2000 Electrical Characteristics Symbol Package Reel Size Tape Width Quantity Ta = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO 12 Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 ICES Collector Cut-off Current VCB = 700V, IE = 0 100 µA ICEO Collector Cut-off Current VCB = 400V, IB = 0 250 µA IEBO Emitter Cut-off Current VEB = 12V, IC = 0 1 mA hFE DC Current Gain VCE = 5V, IC = 10mA VCE = 5V, IC = 2.0A VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V 10 8 40 IC = 0.5A, IB = 0.1A 0.7 V IC = 1.0A, IB = 0.2A 1.0 V IC = 2.5A, IB = 0.5A 1.5 V IC = 0.5A, IB = 0.1A 1.1 V IC = 1.0A, IB = 0.2A 1.2 V IC = 2.5A, IB = 0.5A tSTG tF tSTG Storage Time Fall Time Storage Time VCLAMP=200V, IC=2.0A, IB1=0.4A, VBE(off)=-5V, L=200µH tF Fall Time VCC=250V, IC=2.0A, IB1=0.4A, IB2=-0.4A, TP=30µs VF Diode Forward Voltage IF = 2A V µs 0.1 µs 2.9 µs µs 0.2 2.5 © 2010 Fairchild Semiconductor Corporation FJD5304D Rev. A1 1.3 0.6 V www.fairchildsemi.com 2 FJD5304D — High Voltage Fast Switching Transistor Package Marking and Ordering Information Figure 1. Static Characteristic Figure 2. DC Current Gain 4.0 100 IB=300mA o hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 3.5 3.0 IB=150mA 2.5 IB=100mA 2.0 IB=50mA 1.5 1.0 TC=125 C o TC= - 25 C o TC=25 C 10 0.5 0.0 0 2 4 6 8 10 1 0.01 12 0.1 VCE [V]. COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 10 IC = 5 IB o TC=125 C 1 o TC=25 C o TC= - 25 C 0.1 0.01 0.01 0.1 1 IC = 5 IB o TC= - 25 C 1 o 0.1 0.01 10 TC=25 C o TC=125 C 0.1 IC [A], COLLECTOR CURRENT 1 10 IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Time Figure 6. Forward Biased Safe Operating Area 10 100 tSTG IC [A], COLLECTOR CURRENT tSTG & tF [µs], SWITCHING TIME 10 Figure 4. Base-Emitter Saturation Voltage 10 1 tF 0.1 VCC=250V Pulse IC_MAX 10 0.01 0.1 10µs DC IC_MAX 1µs 1 1ms 0.1 o TC = 25 C IC= 5 IB1= - 5 IB2 Single Pulse 1 0.01 10 IC [A], COLLECTOR CURRENT 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE © 2010 Fairchild Semiconductor Corporation FJD5304D Rev. A1 1 IC [A], COLLECTOR CURRENT www.fairchildsemi.com 3 FJD5304D — High Voltage Fast Switching Transistor Typical Performance Characteristics Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating Curve Vcc=50V, L = 1mH IB1=1A, IB2 = -1A 9 IC [A], COLLECTOR CURRENT PC [W], COLLECTOR POWER DISSIPATION 10 8 7 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 900 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE 20 0 0 25 50 75 100 125 150 o TC [ C], CASE TEMPERATURE © 2010 Fairchild Semiconductor Corporation FJD5304D Rev. A1 40 www.fairchildsemi.com 4 FJD5304D — High Voltage Fast Switching Transistor Typical Performance Characteristics (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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