FJD5553TM

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FJD5553 NPN Silicon Transistor Features • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability C 2 E 3 1 B Application DPAK Marking : J5553 1 • Electronic Ballast • Switch Mode Power Supplies 1. Base 2. Collector 3. Emitter Ordering Information Part Number Marking Package Packing Method FJD5553TM J5553 D-PAK Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Units BVCBO Collector-Base Voltage 1050 V BVCEO Collector-Emitter Voltage 400 V BVEBO Emitter-Base Voltage 14 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 6 A IB Base Current (DC) 1 A IBP Base Current (Pulse) 2 A TJ Junction Temperature 150 °C TSTG Storage Junction Temperature Range - 55 to +150 °C Value Units Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol PD Rθja(1) Parameter Total Device Dissipation TA = 25°C Thermal Resistance, Junction to Ambient 1.25 W 100 °C/W Note: 1. Rθja test board and fixture under natural convection; JESD51-3 recommended thermal test board. © 2007 Fairchild Semiconductor Corporation Rev. 1.2.0 www.fairchildsemi.com 1 FJD5553 — NPN Silicon Transistor June 2013 Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions IC = 500 μA, IE = 0 BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage IC = 5 mA, IB = 0 BVEBO Emitter-Base Breakdown Voltage hFE DC Current Gain V IE = 500 μA, IC = 0 14 V VCE = 5 V, IC = 10 mA 10 VCE = 3 V, IC = 0.4 A 30 VBE(sat) Base-Emitter Saturation Voltage IC = 1 A, IB = 0.2 A Cob Output Capacitance VCB = 10 V, f = 1 MHz tON Turn-On Time tSTG Storage Time Turn-On Time tSTG Storage Time tF EAS Note: Fall Time Avalanche Energy Units 400 IC = 1 A, IB = 0.2 A tON Max V Collector-Emitter Saturation Voltage Fall Time Typ. 1050 VCE(sat) tF Min. 0.23 0.50 V 1.2 V 45 VCC = 125 V, IC = 0.5 A, IB1 = 45 mA, IB2 = 0.5 A, RL = 250 Ω pF 1.0 μs 1.2 μs μs 0.3 VCC = 250 V, IC = 2.5 A, IB1 = 0.5 A, IB2 = 1.0 A, RL = 100 Ω L = 2 mH 60 3.5 2.0 μs 2.5 μs 0.3 μs mJ 2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. © 2007 Fairchild Semiconductor Corporation Rev. 1.2.0 www.fairchildsemi.com 2 FJD5553 — NPN Silicon Transistor Electrical Characteristics(2) 1000 o o Ta = 125 C VCE = 5V VCE(sat) [mV], SATURATION VOLTAGE Ta = 75 C hFE, DC CURRENT GAIN 100 o o Ta = 25 C Ta = - 25 C 10 1 0.01 0.1 1 IC = 5 I B o Ta = 125 C o o Ta = 25 C 100 0.01 10 Ta = - 25 C o Ta = 75 C 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Saturation Voltage tSTG o 1 Ta = 25 C o tSTG & tF [ns], SWITCHING TIME VBE(sat) [V], SATURATION VOLTAGE 1000 IC = 5 IB Ta = - 25 C o Ta = 75 C o Ta = 125 C 0.1 0.01 0.1 1 100 10 0.1 10 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Saturation Voltage Figure 4. Resistive Load Switching 10000 1.5 tSTG PC[W], POWER DISSIPATION tSTG & tF [ns], SWITCHING TIME tF VCC=125V IB1=45mA, IB2=0.5A 1000 tF 100 VCC=250V IB1=0.5A, IB2=1.0A 1.2 0.9 0.6 0.3 0.0 10 0.1 1 0 10 IC [A], COLLECTOR CURRENT 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE Figure 5. Resistive Load Switching © 2007 Fairchild Semiconductor Corporation Rev. 1.2.0 25 Figure 6. Power Derating www.fairchildsemi.com 3 FJD5553 — NPN Silicon Transistor Typical Performance Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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