FJE3303H2TU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Regulator TO-126 1 1. Emitter Absolute Maximum Ratings Symbol 2.Collector 3.Base TC = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 1.5 A ICP Collector Current (Pulse) * 3 A IB Base Current (DC) 0.75 A IBP Base Current (Pulse) * 1.5 A PC Collector Dissipation (TC = 25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C * Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10% ©2005 Fairchild Semiconductor Corporation FJE3303 Rev. B 1 www.fairchildsemi.com FJE3303 High Voltage Fast-Switching NPN Power Transistor FJE3303 Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdwon Voltage IC = 500µA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 ICBO Collector Cut-off Current VCB = 700V, IE = 0 9 V 10 µA 10 µA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 hFE1 hFE2 DC Current Gain * VCE = 2V, IC = 0.5A VCE = 2V, IC = 1.0A VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A IC = 1.5A, IB = 0.5A 0.5 1.0 3.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A 1.0 1.2 V V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.1A Cob Output Capacitance VCB = 10V, f = 0.1MHz VCC = 125V, IC = 1A IB1 = 0.2A, IB2 = -0.2A RL = 125Ω tON Turn On Time tSTG Storge Time tF Fall Time 8 5 21 4 MHz 21 pF 1.1 µs 4.0 µs 0.7 µs * Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2% hFE Classification Classification H1 H2 hFE1 8 ~ 16 14 ~ 21 2 FJE3303 Rev. B www.fairchildsemi.com FJE3303 High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Figure 1. Static Characteristic Figure 2. DC Current Gain 1.6 100 VCE = 2V 1.4 1.2 IB = 120 mA hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT o Ta = 75 C o Ta = 125 C 1.0 0.8 IB = 40 mA 0.6 IB = 20 mA 0.4 o Ta = - 25 C o Ta = 25 C 10 0.2 0.0 0 1 2 3 4 5 6 7 8 9 1 1E-3 10 0.01 0.1 1 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 10 o VCE(sat) [V], SATURATION VOLTAGE o o Ta = 25 C 1 o Ta = - 25 C 0.1 0.01 0.01 0.1 IC = 4 IB Ta = 75 C VBE(sat) [V], SATURATION VOLTAGE Ta = 125 C IC = 4 IB 1 o o 1 o o Ta = 125 C 0.1 0.01 10 Ta = 25 C Ta = - 25 C IC [A], COLLECTOR CURRENT Ta = 75 C 0.1 1 10 IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Time Figure 6. Resistive Load Switching Time 10 tSTG & tF [µ s], SWITCHING TIME tSTG & tF [µ s], SWITCHING TIME 10 tSTG 1 tF 0.1 IB1 = - IB2 = 0.2A VCC = 125V 0.01 0.1 1 tF 0.1 IB1 = 120mA, IB2 = - 40mA VCC = 310V 0.01 0.1 1 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 3 FJE3303 Rev. B tSTG www.fairchildsemi.com FJE3303 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) Figure 7. Forward Biased Safe Operating Area Figure 8. Reverse Biased Safe Operating Area 10 10 1ms 100µs 5ms IC [A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT IC (Pulse) IC (DC) 1 0.1 o 1 TC = 25 C Single Pulse IB1 = 1A, RB2 = 0 VCC = 50V, L =1 mH 0.01 1 10 100 0.1 100 1000 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Power Derating PC [W], COLLECTOR POWER DISSIPATION 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o Ta [ C], AMBIENT TEMPERATURE 4 FJE3303 Rev. B www.fairchildsemi.com FJE3303 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics 3.45 3.05 8.30 7.70 4.00 3.80 14.20 MAX 3.20 11.20 10.80 1.95 1.55 1.35 1.70 1.50 D 0.85 0.65 3X #1 2.29 FRONT VIEW NOTES: A. B. C. 0.60 0.45 3X 0.254 M SIDE VIEW TOP VIEW 3° 1.00 E PRODUCTION CODE TSSTU TSTU NONE (STD LENGTH) TERMINAL LENGTH "D" 3.45 - 4.05 2.36 - 2.96 TERMINAL LENGTH "E" 6.45-7.45 5.36-6.36 12.76 - 13.36 15.76-16.76 NO INDUSTRY STANDARD APPLIES TO THIS PACKAGE ALL DIMENSIONS ARE IN MILLIMETERS DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS D FOR TERMINAL LENGTH "D", REFER TO TABLE E F. FOR TERMINAL LENGTH "E", REFER TO TABLE DRAWING FILENAME: MKT-TO126AArev2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com