FJE5304DTU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FJE5304D NPN Triple Diffused Planar Silicon Transistor Features • • • • • Equivalent Circuit High-Voltage, High-Speed Power Switch Applications Wide Safe Operating Area Built-in Free-Wheeling diode Suitable for Electronic Ballast Applications Small Variance in Storage Time C B TO-126 1 1.Emitter 2.Collector E 3.Base Ordering Information Part Number Top Mark Package Packing Method FJE5304D J5304D TO-126 3L Bulk FJE5304DTU J5304D TO-126 3L Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Unit V VCBO Collector-Base Voltage 700 VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 4 A 8 A 2 A 4 A -65 to 150 °C (Pulse)(1) ICP Collector Current IB Base Current (DC) IBP TSTG Base Current (Pulse)(1) Storage Temperature Range Note: 1. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. © 2004 Fairchild Semiconductor Corporation FJE5304D Rev. 1.1.0 www.fairchildsemi.com 1 FJE5304D — NPN Triple Diffused Planar Silicon Transistor June 2014 Values are at TC = 25°C unless otherwise noted. Symbol PC Parameter Max. Collector Dissipation (TC = 25°C) Unit 30 W RθJC Thermal Resistance, Junction to Case 4.17 °C/W RθJA Thermal Resistance, Junction to Ambient 83.3 °C/W Electrical Characteristics(2) Values are at TC = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 1 mA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5 mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 1 mA, IC = 0 12 V ICES Collector Cut-Off Current VCE = 700 V, VEB = 0 100 μA ICEO Collector Cut-Off Current VCE = 400 V, IB = 0 250 μA IEBO Emitter Cut-Off Current VEB = 12 V, IC = 0 100 μA hFE DC Current Gain VCE = 5 V, IC = 10 mA 10 VCE = 5 V, IC = 2 A 8 40 IC = 0.5 A, IB = 0.1 A VCE(sat) VBE(sat) Vf Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Internal Diode Forward Voltage Drop 0.7 IC = 1 A, IB = 0.2 A 1.0 IC = 2.5 A, IB = 0.5 A 1.5 IC = 0.5 A, IB = 0.1 A 1.1 IC = 1 A, IB = 0.2 A 1.2 IC = 2.5 A, IB = 0.5 A 1.3 IF = 2 A 2.5 V V V Inductive Load Switching (VCC = 200 V) tstg tf Storage Time Fall Time IC = 2 A, IB1 = 0.4 A, VBE(off) = -5 V, L = 200 μH 0.6 μs 0.1 μs Resistive Load Switching (VCC = 250 V) tstg tf Storage Time Fall Time IC = 2 A, IB1 = IB2 = 0.4 A, TP = 30 μs 2.9 0.2 μs μs Note: 2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. © 2004 Fairchild Semiconductor Corporation FJE5304D Rev. 1.1.0 www.fairchildsemi.com 2 FJE5304D — NPN Triple Diffused Planar Silicon Transistor Thermal Characteristics 100 Vce=5V IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA 4 3 o Ta=125 C hFE,DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 IB = 100mA 2 IB = 50mA 1 o 25 C o -25 C 10 IB = 0 0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic 10 Figure 2. DC Current Gain 10 10 Ic=5IB VBE[V],SATURATION VOLTAGE VCE(sat)[V],SATURATION VOLTAGE 1 IC[A], COLLECTOR CURRENT O 25 C\b 1 O Ta=125 C\b O -25 C\b 0.1 0.01 0.01 0.1 1 Ic=5IB 1 O -25 C O 25 C O Ta=125 C 0.1 0.01 10 IC[A], COLLECTOR CURRENT 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 4. Base-Emitter Saturation Voltage Figure 3. Collector-Emitter Saturation Voltage 1000 10 VCC = 250V IC = 5IB1 = -5IB2 tSTG tSTG, tF [ns], TIME tSTG, tF [μs], TIME tSTG 1 tF 0.1 100 tF VClamp = 200V, VBE(OFF)=-5V, RBB=0 Ohm, L=200 uH, IC = 5IB1 0.01 0.1 1 10 0.1 10 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Time © 2004 Fairchild Semiconductor Corporation FJE5304D Rev. 1.1.0 1 Figure 6. Inductive Load Switching Time www.fairchildsemi.com 3 FJE5304D — NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics 100 100 o 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT TC=25 C 1μs 10μs 1ms 1 DC 0.1 0.01 10 100 Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 10 1 0.1 0.01 10 1000 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Forward Bias Safe Operating Area Figure 8. Reverse Bias Safe Operating Area PC[W], POWER DISSIPATION 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 9. Power Derating © 2004 Fairchild Semiconductor Corporation FJE5304D Rev. 1.1.0 www.fairchildsemi.com 4 FJE5304D — NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics (Continued) 3.45 3.05 8.30 7.70 4.00 3.80 14.20 MAX 3.20 11.20 10.80 1.95 1.55 1.35 1.70 1.50 D 0.85 0.65 3X #1 2.29 FRONT VIEW NOTES: A. B. C. 0.60 0.45 3X 0.254 M SIDE VIEW TOP VIEW 3° 1.00 E PRODUCTION CODE TSSTU TSTU NONE (STD LENGTH) TERMINAL LENGTH "D" 3.45 - 4.05 2.36 - 2.96 TERMINAL LENGTH "E" 6.45-7.45 5.36-6.36 12.76 - 13.36 15.76-16.76 NO INDUSTRY STANDARD APPLIES TO THIS PACKAGE ALL DIMENSIONS ARE IN MILLIMETERS DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS D FOR TERMINAL LENGTH "D", REFER TO TABLE E F. FOR TERMINAL LENGTH "E", REFER TO TABLE DRAWING FILENAME: MKT-TO126AArev2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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