FJI5603DTU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FJI5603D NPN Silicon Transistor Applications Equivalent Circuit • High Voltage and High Speed Power Switch Application • Electronic Ballast Application Features C B • Wide Safe Operating Area • Small Variance in Storage Time • Built-in Free Wheeling Diode I2-PAK 1 E 1.Base 2.Collector 3.Emitter Ordering Information Part Number Marking Package Packing Method FJI5603DTU J5603D TO-262 3L (I2PAK) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit V VCBO Collector-Base Voltage 1600 VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 3 A (1) ICP Collector Current (Pulse) 6 A IB Base Current (DC) 2 A IBP Base Current (Pulse)(1) 4 A PC Power Dissipation (TC = 25°C) 100 W TJ Junction Temperature 150 °C TSTG Storage Junction Temperature Range EAS Avalanche Energy (TJ = 25°C, 8 mH) -65 to +150 °C 3.5 mJ Notes: 1. Pulse test: pulse width = 5 ms, duty cycle < 10% © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. 1.1 www.fairchildsemi.com FJI5603D — NPN Silicon Transistor January 2016 Values are at TA = 25°C unless otherwise noted. Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Rating Unit 1.25 °C/W 80 °C/W Note: 2. Device mounted on minimum pad size. Electrical Characteristics(3) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Min. Typ. IC = 0.5 mA, IE = 0 1600 1689 V Collector-Emitter Breakdown Voltage IC = 5 mA, IB = 0 800 870 V BVEBO Emitter-Base Breakdown Voltage IE = 0.5 mA, IC = 0 12.0 14.8 V ICES Collector Cut-Off Current VCE = 1600 V, VBE = 0 ICEO Collector Cut-Off Current VCE = 800 V, IB = 0 IEBO Emitter Cut-Off Current VEB = 12 V, IC = 0 BVCBO Collector-Base Breakdown Voltage BVCEO Conditions VCE = 3 V, IC = 0.4 A hFE DC Current Gain VCE = 10 V, IC = 5 mA VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage TC = 25°C 0.01 TC = 125°C 100 1000 TC = 25°C 0.01 TC = 125°C 100 1000 0.05 500 35 TC = 25°C 20 29 TC = 125°C 6 15 TC = 25°C 20 43 TC = 125°C 20 IC = 250 mA, IB = 25 mA Max. 1.25 IC = 500 mA, IB = 50 mA 1.50 2.50 IC = 1 A, IB = 0.2 A 1.20 2.50 0.74 1.20 IC = 2 A, IB = 0.4 A TC = 25°C μA μA μA 46 0.50 IC = 500 mA, IB = 50 mA Unit TC = 125°C 0.61 1.10 TC = 25°C 0.85 1.20 TC = 125°C 0.74 1.10 V V Cib Input Capacitance VEB = 10 V, IC = 0, f = 1 MHz 745 1000 pF Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 56 500 pF fT Current Gain Bandwidth Product IC = 0.1 A,VCE = 10 V 5 VF Diode Forward Voltage MHz IF = 0.4 A 0.76 1.20 IF = 1 A 0.83 1.50 V Note: 3. Pulse test: pulse width = 20 μs, duty cycle ≤ 10%. © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. 1.1 www.fairchildsemi.com 2 FJI5603D — NPN Silicon Transistor Thermal Characteristics(2) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit 400 600 ns 2.1 2.3 μs 310 1000 ns 600 1100 ns 1.3 1.5 μs 180 350 ns 1.2 μs 170 250 ns 180 250 ns 1.2 μs 140 175 ns 170 200 ns RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width = 20 μs) tON Turn-On Time tSTG Storage Time tF Fall Time tON Turn-On Time tSTG Storage Time tF Fall Time IC = 0.3 A, IB1 = 50 mA, IB2 = 150 A, VCC = 125 V, RL = 416 Ω 1.9 IC = 0.5 A, IB1 = 50 mA, IB2 = 250 mA, VCC = 125 V, RL = 250 Ω INDUCTIVE LOAD SWITCHING (VCC = 15 V) tSTG Storage Time tF Fall Time tC Cross-Over Time tSTG Storage Time tF Fall Time tC Cross-Over Time IC = 0.3 A, IB1 = 50 mA, IB2 = 150 mA, VZ = 300 V, LC = 200 H 0.8 IC = 0.5 A, IB1 = 50 mA, IB2 = 250 mA, VZ = 300 V, LC = 200 H 0.8 © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. 1.1 www.fairchildsemi.com 3 FJI5603D — NPN Silicon Transistor Electrical Characteristics (Continued) 3 VCE=10V 2 100 o TJ=125 C hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 1A 900mA 800mA 700mA 600mA 500mA 400mA 300mA 200mA IB=100mA 1 o TJ=25 C 10 1 0 0 1 2 3 4 5 6 1 7 Figure 1. Static Characteristic 1000 IC=5IB VBE[V], VOLTAGE VCE(sat)(V), VOLTAGE 100 Figure 2. DC Current Gain IC=5IB 10 10 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR EMITTER VOLTAGE 1 o TJ=125 C 1 o TJ=25 C o TJ=125 C 0.1 o TJ=25 C 0.01 0.1 1 10 100 1000 1 IC(mA), COLLECTOR CURRENT 10 100 1k IC[mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 2 1000 o TJ=25 C F=1MHz Cib CAPACITANCE[pF] VCE[V], VOLTAGE 3.0A 2.0A 1.0A 1 0.4A IC=0.2A 100 Cob 10 0 1 10 100 1 1k 1 IB[mA], BASE CURRENT 100 Figure 6. Capacitance Figure 5. Typical Collector Saturation Voltage © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. 1.1 10 REVERSE VOLTAGE[V] www.fairchildsemi.com 4 FJI5603D — NPN Silicon Transistor Typical Performance Characteristics FJI5603D — NPN Silicon Transistor Typical Performance Characteristics (Continued) 5 1000 900 800 700 600 4.5 IC=6IB1=2IB2 VCC=125V PW=20us 3.5 500 3 tOFF(us),TIME tON[ns],TIME IC=6IB1=2IB2 VCC=125V PW=20us 4 400 o TJ=125 C 300 o 2.5 TJ=125 C 2 200 o 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 o 1.5 TJ=25 C 2 TJ=25 C 1 0.3 3 0.4 Figure 7. Resistive Switching Time, ton 8 IC=10IB1=5IB2 VCC=125V PW=20us 3 IC=10IB1=5IB2 VCC=125V PW=20us 7 6 o TJ=125 C 5 tOFF(us),TIME 600 tON[ns],TIME 2 10 9 900 700 0.6 0.7 0.8 0.9 1 Figure 8. Resistive Switching Time, toff 1000 800 0.5 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 500 400 4 o TJ=125 C 3 2 o TJ=25 C 300 200 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 o TJ=25 C 2 1 0.3 3 Figure 9. Resistive Switching Time, ton 0.5 0.6 0.7 0.8 0.9 1 2 3 Figure 10. Resistive Switching Time, toff 4 3 0.4 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 6 IC=6IB1=2IB2 VCC=15V VZ=300V LC=200uH 5 4 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200uH o TJ=125 C tSTG(us),TIME tSTG(us),TIME o TJ=125 C 2 3 o TJ=25 C 2 o TJ=25 C 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 1 0.3 3 IC[A], COLLECTOR CURRENT 0.5 0.6 0.7 0.8 0.9 1 2 IC[A], COLLECTOR CURRENT Figure 11. Inductive Switching Time, tSTG Figure 12. Inductive Switching Time, tSTG © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. 1.1 0.4 www.fairchildsemi.com 5 (Continued) 800 400 700 IC=6IB1=2IB2 VCC=15V VZ=300V LC=200uH 300 200 600 500 o TJ=25 C 400 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200uH tF(ns),TIME tF(ns),TIME 300 100 90 80 70 60 o o TJ=25 C 200 TJ=125 C 50 100 90 80 40 30 o TJ=125 C 70 60 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 50 0.3 3 IC[A], COLLECTOR CURRENT 0.5 0.6 0.7 0.8 0.9 1 2 IC[A], COLLECTOR CURRENT Figure 13. Inductive Switching Time, tF Figure 14. Inductive Switching Time, tF 2000 500 IC=6IB1=2IB2 VCC=15V VZ=300V LC=200uH 400 1000 900 800 700 tC[ns],TIME 300 tC[ns],TIME 0.4 o TJ=25 C 200 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200uH o TJ=125 C 600 500 400 300 o o TJ=125 C 100 0.3 0.4 0.5 TJ=25 C 200 0.6 0.7 0.8 0.9 1 2 100 0.3 3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 15. Inductive Switching Time, tc Figure 16. Inductive Switching Time, tc PC[W], POWER DISSIPATION 100 50 0 0 50 100 150 200 o TC( C), CASE TEMPERATURE Figure 17. Power Derating © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. 1.1 www.fairchildsemi.com 6 FJI5603D — NPN Silicon Transistor Typical Performance Characteristics 10.29 9.65 A 8.33 6.22 4.83 4.06 1.40 1.00 7.88 6.86 B 1.40 1.14 7° 9.65 8.64 5° 5° 1 2 3 B 3.96 2.80 2.13 14.73 12.70 2.79 2.03 1.78 1.14 SEE NOTE "G" B 2.54 B 5.08 B 0.90 0.64 0.254 A M B NOTES: A. EXCEPT WHERE NOTED CONFORMS TO TO262 JEDEC VARIATION AA. B DOES NOT COMPLY JEDEC STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ANSI Y14.5-1994. F. LOCATION OF PIN HOLE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF PACKAGE) G. MAXIMUM WIDTH FOR F102 DEVICE = 1.35 MAX. H. DRAWING FILE NAME: TO262A03REV6 0.64 0.33 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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