FJL6920TU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FJL6920 FJL6920 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1700V • Low Saturation Voltage : VCE(sat) = 3V (Max.) • For Color Monitor 1 TO-264 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Rating 1700 Units V 800 V 6 V IC Collector Current (DC) 20 A ICP* Collector Current (Pulse) 30 A PC Collector Dissipation 200 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Pulse Test: PW=300µs, duty Cycle=2% Pulsed Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Conditions VCB=1400V, RBE=0 Min. Typ. Max. 1 Units mA ICBO Collector Cut-off Current VCB=800V, IE=0 10 µA IEBO Emitter Cut-off Current VEB=4V, IC=0 1 mA BVCBO Collector-Base Breakdown Voltage IC=500µA, IE=0 1700 V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 800 V BVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 V hFE1 hFE2 DC Current Gain VCE=5V, IC=1A VCE=5V, IC=11A 8 5.5 VCE(sat) Collector-Emitter Saturation Voltage IC=11A, IB=2.75A 3 V VBE(sat) Base-Emitter Saturation Voltage IC=11A, IB=2.75A 1.5 V tSTG* Storage Time tF* Fall Time VCC=200V, IC=10A, RL=20Ω IB1=2.0A, IB2= - 4.0A 8.5 0.15 3 µs 0.2 µs * Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC Parameter Thermal Resistance, Junction to Case ©2001 Fairchild Semiconductor Corporation Typ Max 0.625 Units °C/W Rev. A, May 2001 FJL6920 Typical Characteristics 100 16 IB=4.0A VCE = 5V 12 IB=2.0A 10 IB =1.5A 8 IB =1.0A 6 IB=0.5A 4 IB=0.2A o 10 Ta = - 25 C 2 0 2 4 6 8 1 0.1 10 1 10 100 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristics Figure 2. DC Current Gain 10 10 IC = 3 IB VCE(SAT) [V], SATURATION VOLTAGE VCE(SAT) [V], SATURATION VOLTAGE Ta = 25 C o 0 o Ta = 125 C 1 o Ta = 25 C o Ta = - 25 C 0.1 0.01 0.1 1 10 IC = 5 IB o Ta = 125 C 1 o Ta = 25 C o Ta = - 25 C 0.1 0.01 0.1 100 IC [A], COLLECTOR CURRENT 1 10 100 IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 10 16 VCC = 200V, IC = 10A, IB1 = 2A VCE = 5V tSTG & tF [µs], SWITCHING TIME 14 IC [A], COLLECTOR CURRENT o Ta = 125 C hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 14 12 10 8 6 4 2 o 125 C 0 0.0 o 25 C tSTG 1 tF 0.1 o - 25 C 0.01 0.2 0.4 0.6 0.8 1.0 VBE [V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2001 Fairchild Semiconductor Corporation 1.2 1 10 IB2 [A], REVERSE BASE CURRENT Figure 6. Resistive Load Switching Time Rev. A, May 2001 FJL6920 Typical Characteristics (Continued) 100 10 tSTG 1 VCC = 200V, IB1 = 2A, IB2 = - 4A 10 tSTG & tF [µs], SWITCHING TIME tSTG & tF [µs], SWITCHING TIME VCC = 200V, IC = 10A, IB2 = - 4A tF 0.1 tSTG 1 tF 0.1 0.01 1 10 1 IB1 [A], FORWARD BASE CURRENT IC [A], COLLECTOR CURRENT Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time 100 40 IC (Pulse) t = 100ms 35 IC [A], COLLECTOR CURRENT IC (DC) 10 1 0.1 o TC = 25 C Single Pulse 0.01 1 RB2 = 0, IB1 = 15A VCC = 30V, L = 200µ H t = 10ms t = 1ms IC [A], COLLECTOR CURRENT 10 10 100 1000 10000 30 25 20 15 VBE(off) = -6V 10 V BE(off) = -3V 5 1 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Forward Bias Safe Operating Area Figure 10. Reverse Bias Safe Operating Area 300 PC [W], POWER DISSIPATION 250 200 150 100 50 0 0 25 50 75 100 125 150 175 O TC [ C], CASE TEMPERATURE Figure 11. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A, May 2001 5.20 4.80 20.20 19.80 B 18.30 17.70 1.00 C 6.20 5.80 3.50 3.10 R2.00 C A 16.60 2.00 12.00 7.40 7.00 0.254 A B 1.20 0.80 9.10 8.90 C 21.62 21.02 0.50 20.20 19.80 R1.00 C 1.70 1.30 1.50 4.05 C 3.20 2.80 2.70 2X 2.30 C 1.25 0.90 0.254 M A B 3.10 C 2.50 20.50 C 19.50 5.75 5.15 3.70 3.30 1.50 0.85 C 0.50 5.75 5.15 FRONT VIEW 0.15 1.50 SIDE VIEW 5.20 4.80 BOTTOM VIEW NOTES: A. PACKAGE REFERENCE: JEDEC TO264 VARIATION AA. B. ALL DIMENSIONS ARE IN MILLIMETERS. C OUT OF JEDEC STANDARD VALUE. D. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. E. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. F. THIS PACKAGE IS INTENDED ONLY FOR "FS PKG CODE AR" G. DRAWING FILE NAME: TO264A03REV2 BACK VIEW 2.60 C 2.40 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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