FJN3302RBU

FJN3302R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor (R1 = 10 kΩ, R2 = 10 kΩ) Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Applications • Switching, Interface, and Driver Circuits • Inverters • Digital Applications in Industrial Segments Equivalent Circuit C R1 B R2 1 TO-92 1. Emitter 2. Collector 3. Base E Ordering Information Part Number Top Mark Package Packing Method FJN3302RTA R3302 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit 50 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current 100 mA TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C © 2002 Fairchild Semiconductor Corporation FJN3302R Rev. 1.1.2 www.fairchildsemi.com 1 FJN3302R — NPN Epitaxial Silicon Transistor with Bias Resistor November 2013 Values are at TA = 25°C unless otherwise noted. Symbol PD Value Unit Power Dissipation Parameter 300 mW Derate Above TA = 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient 416 RθJA Note: 1. PCB size: FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. °C/W Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 50 V BVCEO Collector-Emitter Breakdown Voltage IC = 100 μA, IB = 0 50 V ICBO Collector Cut-Off Current VCB = 40 V, IE = 0 hFE DC Current Gain VCE = 5 V, IC = 5 mA Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA VCE(sat) fT 0.1 μA 0.3 V 30 Current Gain Bandwidth Product VCE = 10 V, IC = 5 mA 250 MHz Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 3.7 pF VI(off) Input-Off Voltage VCE = 5 V, IC = 100 μA VI(on) Input-On Voltage VCE = 0.3 V, IC = 10 mA Cob 0.5 V kΩ 3 V R1 Input Resistor 7 10 13 R1/R2 Resistor Ratio 0.9 1.0 1.1 © 2002 Fairchild Semiconductor Corporation FJN3302R Rev. 1.1.2 www.fairchildsemi.com 2 FJN3302R — NPN Epitaxial Silicon Transistor with Bias Resistor Thermal Characteristics(1) 100 1000 VCE =0.3V R1 = 10 K R2 = 10 K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN VCE = 5V R1 = 10K R2 = 10K 100 10 1 10 100 10 1 0.1 0.1 1000 1 IC[mA], COLLECTOR CURRENT 10 100 IC[mA], COLLECTOR CURRENT Figure 1. DS Current Gain Figure 2. Input-On Voltage 1000 300 PC[mW], POWER DISSIPATION IC [μA], COLLECTOR CURRENT 350 VCE = 5V R1 = 10K R2 = 10K 100 10 0.0 250 200 150 100 50 0 0.4 0.8 1.2 1.6 2.0 0 2.4 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE VI(off)[V], INPUT OFF VOLTAGE Figure 3. Input-Off Voltage © 2002 Fairchild Semiconductor Corporation FJN3302R Rev. 1.1.2 Figure 4. Power Derating www.fairchildsemi.com 3 FJN3302R — NPN Epitaxial Silicon Transistor with Bias Resistor Typical Performance Characteristics FJN3302R — NPN Epitaxial Silicon Transistor with Bias Resistor Physical Dimension TO-92 Figure 5. 3-LEAD, TO-92, MOLDED 0.200 IN-LINE SPACING LD FORM (J61Z OPTION) (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F.pdf. © 2002 Fairchild Semiconductor Corporation FJN3302R Rev. 1.1.2 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 © Fairchild Semiconductor Corporation www.fairchildsemi.com