FJN4303R
PNP Epitaxial Silicon Transistor with Bias Resistor
Features
Description
• 100 mA Output Current Capability
• Built-in Bias Resistor (R1 = 22 kΩ, R2 = 22 kΩ)
Transistors with built-in resistors can be excellent
space- and cost-saving solutions by reducing component count and simplifying circuit design.
Application
• Switching, Interface, and Driver Circuits
• Inverters
• Digital Applications in Industrial Segments
Equivalent Circuit
C
R1
B
R2
1
TO-92
1. Emitter 2. Collector 3. Base
E
Ordering Information
Part Number
Top Mark
Package
Packing Method
FJN4303RTA
R4303
TO-92 3L
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
-50
V
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current
-100
mA
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 to 150
°C
© 2002 Fairchild Semiconductor Corporation
FJN4303R Rev. 1.1.2
www.fairchildsemi.com
1
FJN4303R — PNP Epitaxial Silicon Transistor with Bias Resistor
November 2013
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Value
Unit
Power Dissipation
Parameter
300
mW
Derate Above TA = 25°C
2.4
mW/°C
Thermal Resistance, Junction to Ambient
416
RθJA
Note:
1. PCB size: FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
BVCBO
BVCEO
ICBO
hFE
VCE(sat)
fT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
IC = -10 μA, IE = 0
IC = -100 μA, IB = 0
VCB = -40 V, IE = 0
VCE = -5 V, IC = -5 mA
IC = -10 mA, IB = -0.5 mA
VCE = -10 V, IC = -5 mA
VCB = -10 V, IE = 0,
f = 1.0 MHz
VCE = -5 V, IC = -100 μA
VCE = -0.3 V, IC = -5 mA
-50
-50
Cob
VI(off)
VI(on)
R1
R1/R2
Output Capacitance
Input-Off Voltage
Input-On Voltage
Input Resistor
Resistor Ratio
© 2002 Fairchild Semiconductor Corporation
FJN4303R Rev. 1.1.2
Typ.
Max.
Unit
-0.1
V
V
μA
56
200
-0.3
V
MHz
5.5
pF
-0.5
-3.0
15
0.9
22
1.0
29
1.1
V
V
kΩ
www.fairchildsemi.com
2
FJN4303R — PNP Epitaxial Silicon Transistor with Bias Resistor
Thermal Characteristics(1)
-100
-1000
VCE = - 0.3V
R1 = 22 K
R2 = 22 K
VI(on)[V], INPUT VOLTAGE
hFE, DC CURRENT GAIN
VCE = - 5V
R1 = 22K
R2 = 22K
-100
-10
-1
-10
-100
-10
-1
-0.1
-1000
-1
-10
-100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Input-On Voltage
-1000
300
PC[mW], POWER DISSIPATION
IC [μA], COLLECTOR CURRENT
350
VCE = - 5V
R1 = 22K
R2 = 22K
-100
-10
-0.0
250
200
150
100
50
0
-0.4
-0.8
-1.2
-1.6
-2.0
0
-2.4
25
50
75
100
125
150
175
o
Ta[ C], AMBIENT TEMPERATURE
VI(off)[V], INPUT OFF VOLTAGE
Figure 3. Input-Off Voltage
© 2002 Fairchild Semiconductor Corporation
FJN4303R Rev. 1.1.2
Figure 4. Power Derating
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3
FJN4303R — PNP Epitaxial Silicon Transistor with Bias Resistor
Typical Performance Characteristics
FJN4303R — PNP Epitaxial Silicon Transistor with Bias Resistor
Physical Dimensions
TO-92
Figure 5. 3-LEAD, TO-92, MOLDED 0.200 IN-LINE SPACING LD FORM (J61Z OPTION) (ACTIVE)
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F.pdf.
© 2002 Fairchild Semiconductor Corporation
FJN4303R Rev. 1.1.2
www.fairchildsemi.com
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Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I66
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