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FJP13007
High Voltage Fast-Switching NPN Power Transistor
Features
•
•
•
•
High Voltage High Speed Power Switch Application
High Voltage Capability
High Switching Speed
Suitable for Electronic Ballast and Switching Mode Power Supply
1
1.Base
TO-220
2.Collector
3.Emitter
Ordering Information
Part Number
Top Mark
Package
Packing Method
FJP13007TU
J13007
TO-220 3L (Dual Gauge)
Rail
FJP13007H1TU
J13007-1
TO-220 3L (Single Gauge)
Rail
FJP13007H1TU_F080
J13007-1
TO-220 3L (Dual Gauge)
Rail
FJP13007H2TU
J13007-2
TO-220 3L (Dual Gauge)
Rail
FJP13007H2TU_F080
J13007-2
TO-220 3L (Dual Gauge)
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
V
VCBO
Collector-Base Voltage
700
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
8
A
ICP
Collector Current (Pulse)
16
A
IB
Base Current (DC)
4
A
PC
Collector Dissipation (TC = 25°C)
80
W
TJ
Junction Temperature
150
°C
-65 to 150
°C
TSTG
Storage Temperature Range
© 2005 Fairchild Semiconductor Corporation
FJP13007 Rev. 1.1.0
www.fairchildsemi.com
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
November 2014
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10 mA, IB = 0
Emitter Cut-Off Current
VEB = 9 V, IC = 0
IEBO
Conditions
Min.
Typ.
Max.
400
V
1
hFE1
DC Current Gain
(1)
VCE = 5 V, IC = 2 A
8
60
hFE2
DC Current Gain(1)
VCE = 5 V, IC = 5 A
5
30
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
IC = 2 A, IB = 0.4 A
1.0
IC = 5 A, IB = 1 A
2.0
IC = 8 A, IB = 2 A
3.0
IC = 2 A, IB = 0.4 A
1.2
IC = 5 A, IB = 1 A
1.6
Current Gain Bandwidth Product
VCE = 10 V, IC = 0.5 A
Cob
Output Capacitance
VCB = 10 V, f = 0.1 MHz
tON
Turn-On Time
tSTG
Storage Time
VCC = 125 V, IC = 5 A,
IB1 = -IB2 = 1 A,
RL = 25 Ω
fT
tF
Fall Time
Unit
4
mA
V
V
MHz
110
pF
1.6
μs
3.0
μs
0.7
μs
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
hFE Classification
Classification
H1
H2
hFE1
15 ~ 28
26 ~ 39
© 2005 Fairchild Semiconductor Corporation
FJP13007 Rev. 1.1.0
www.fairchildsemi.com
2
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
hFE, DC CURRENT GAIN
VCE = 5V
10
1
0.1
1
10
IC = 3 IB
1
VBE(sat)
VCE(sat)
0.1
0.01
0.1
10
1
Figure 1. DC Current Gain
1000
tR, tD [ns], TURN ON TIME
Cob[pF], OUTPUT CAPACITANCE
100
Figure 2. Saturation Voltage
1000
100
10
tR
100
tD, VBE(off)=5V
VCC=125V
IC=5IB
1
0.1
1
10
100
10
0.1
1000
1
VCB[V], COLLECTOR-BASE VOLTAGE
10
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn-On Time
100
10000
VCC=125V
IC=5IB
tSTG
IC[A], COLLECTOR CURRENT
tSTG, tF [ns], TURN OFF TIME
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
1000
100
tF
10μs
10
1ms
DC
100μs
1
0.1
0.01
10
0.1
1
1
10
100
1000
Figure 6. Forward Biased Safe Operating Area
Figure 5. Turn-Off Time
© 2005 Fairchild Semiconductor Corporation
FJP13007 Rev. 1.1.0
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
www.fairchildsemi.com
3
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
100
Vcc=50V,
IB1=1A, IB2 = -1A
L = 1mH
90
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
100
10
1
0.1
80
70
60
50
40
30
20
10
0.01
10
0
100
1000
0
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 8. Power Derating
Figure 7. Reverse Biased Safe Operating Area
© 2005 Fairchild Semiconductor Corporation
FJP13007 Rev. 1.1.0
25
www.fairchildsemi.com
4
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics (Continued)
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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