Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FJP2145
ESBC™ Rated NPN Power Transistor
Description
ESBC Features (FDC655 MOSFET)
•
•
•
•
•
•
•
VCS(ON)
IC
Equiv. RCS(ON)(1)
0.21 V
2A
0.105 Ω
Low Equivalent On Resistance
Very Fast Switch: 150 kHz
Wide RBSOA: Up to 1100 V
Avalanche Rated
Low Driving Capacitance, No Miller Capacitance
Low Switching Losses
Reliable HV Switch: No False Triggering due to
High dv/dt Transients
The FJP2145 is a low-cost, high-performance power
switch designed to provide the best performance when
used in an ESBC™ configuration in applications such as:
power supplies, motor drivers, smart grid, or ignition
switches. The power switch is designed to operate up to
1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses.
The ESBC™ switch can be driven using off-the-shelf
power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that
combines low-input capacitance and fast switching. The
ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.
Applications
The FJP2145 provides exceptional reliability and a large
operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The device is
avalanche rated and has no parasitic transistors, so is not
prone to static dv/dt failures.
• High-Voltage, High-Speed Power Switch
• Emitter-Switched Bipolar/MOSFET Cascode
(ESBC™)
• Smart Meters, Smart Breakers, SMPS,
HV Industrial Power Supplies
The power switch is manufactured using a dedicated
high-voltage bipolar process and is packaged in a highvoltage TO-220 package.
• Motor Drivers and Ignition Drivers
C
C
2
FJP2145
B
1
B
1
1.Base
FDC655
TO-220
2.Collector
G
3.Emitter
Figure 1. Pin Configuration
E
3
S
Figure 2. Internal Schematic Diagram
Figure 3. ESBC Configuration(2)
Ordering Information
Part Number
Marking
Package
Packing Method
FJP2145TU
J2145
TO-220
TUBE
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
FJP2145 — ESBC™ Rated NPN Power Transistor
March 2015
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
5
A
IB
Base Current
1.5
A
PC
Collector Dissipation (TC = 25°C)
120
W
TJ
Operating and Junction Temperature Range
-55 to +125
°C
Storage Temperature Range
-55 to +150
°C
15
mJ
TSTG
(4)
EAR
Avalanche Energy (TJ = 25°C, 1.2 mH)
Notes:
3. Pulse test is pulse width ≤ 5 ms, duty cycle ≤ 10%.
4. Lab characterization data only for reference.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Max.
Unit
RθjC
Thermal Resistance, Junction to Case
Parameter
1.04
°C/W
RθjA
Thermal Resistance, Junction to Ambient
78.72
°C/W
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
2
FJP2145 — ESBC™ Rated NPN Power Transistor
Absolute Maximum Ratings(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
BVCBO
Collector-Base Breakdown Voltage
IC = 1 mA, IE = 0
1100
V
BVCEO
Collector-Emitter Breakdown
Voltage
IC = 5 mA, IB = 0
800
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 1 mA, IC = 0
7
V
ICBO
Collector Cut-off Current
VCB = 800 V, IE = 0
IEBO
Emitter Cut-off Current
hFE1
hFE2
VCE(sat)
VBE(sat)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Conditions
Min.
Typ.
VEB = 5 V, IC = 0
VCE = 5 V, IC = 0.2 A
20
VCE = 5 V, IC = 1 A
8
Max.
Unit
10
μA
10
μA
40
IC = 0.25 A, IB = 0.05 A
0.049
V
IC = 0.5 A, IB = 0.167 A
0.052
V
IC = 1 A, IB = 0.33 A
0.082
V
IC = 1.5 A, IB = 0.3 A
0.151
IC = 500 mA, IB = 50 mA
0.752
IC = 1.5 A, IB = 0.3 A
0.833
2.000
V
V
1.500
V
IC = 2 A, IB = 0.4 A
0.855
V
CIB
Input Capacitance
VEB = 5 V, IC = 0, f = 1 MHz
1.618
pF
COB
Output Capacitance
VCB = 200 V, IE = 0, f = 1 MHz
11.39
pF
Current Gain Bandwidth Product
VCE = 10 V, IC = 0.2 A
15
MHz
fT
Note:
5. Pulse test is pulse width ≤ 5 ms, duty cycle ≤ 10%.
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
3
FJP2145 — ESBC™ Rated NPN Power Transistor
Electrical Characteristics(5)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
fT
Current Gain Bandwidth
Product
Itf
Inductive Current Fall Time
ts
tc
VCC = 100 V, VGS = 10 V, RG = 4 7Ω,
Inductive Storage Time
VClamp = 500 V, IC = 0.5 A,
Inductive Voltage Fall Time
IB = 0.05 A, HFE = 10, LC = 166 μH,
Inductive Voltage Rise Time SRF = 684 kHz
Inductive Crossover Time
Itf
Inductive Current Fall Time
ts
Inductive Storage Time
Vtf
Vtr
Vtf
Vtr
tc
Min.
IC = 0.1 A,VCE = 10 V
VCC = 100 V, VGS = 10 V, RG = 47 Ω,
VClamp = 500 V, IC = 1 A,
Inductive Voltage Fall Time
IB = 0.2 A, HFE = 5, LC = 166 μH,
Inductive Voltage Rise Time SRF = 684 kHz
Inductive Crossover Time
VCSW
Maximum Collector-Source
Voltage at Turn-off without
Snubber
hFE = 5, IC = 2 A
IGS(OS)
Gate-Source Leakage
Current
VGS = ± 20 V
Typ. Max.
Unit
28.40
MHz
95
ns
0.13
ns
135
ns
80
ns
115
ns
50
ns
0.34
ns
150
ns
60
ns
95
ns
1100
V
1
nA
VGS = 10 V, IC = 2 A, IB = 0.67 A, hFE = 3
0.202
V
Collector-Source On
Voltage
VGS = 10 V, IC = 1 A, IB = 0.33 A, hFE = 3
0.111
V
VGS = 10 V, IC = 0.5 A, IB = 0.17 A, hFE = 3
0.067
V
VGS = 10 V, IC = 0.3 A, IB = 0.06 A, hFE = 5
0.060
V
Gate Threshold Voltage
VBS = VGS, IB = 250 μA
1.9
V
Input Capacitance
(VGS = VCB = 0)
VCS = 25 V, f = 1 MHz
470
pF
QGS(tot)
Gate-Source Change
VCB = 0
VGS = 10 V, IC = 6.3 A, VCS = 25 V
9
nC
VGS = 10 V, ID = 6.3 A
21
mΩ
RDS(ON)
Static Drain-to-Source
On Resistance
VGS = 4.5 V, ID = 5.5 A
26
mΩ
VGS = 10 V, ID = 6.3 A, TJ = 125°C
30
mΩ
VCS(ON)
VGS(th)
Ciss
Note:
6. A typical FDC655 MOSFET was used for the specifications above. Values could vary if other Fairchild MOSFETs
are used.
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
4
FJP2145 — ESBC™ Rated NPN Power Transistor
ESBC-Configured Electrical Characteristics(6)
100
VCE = 5 V
IB = 1 A
4
0.9 A
0.8 A
0.7 A
0.6 A
0.5 A
0.4 A
0.3 A
3
2
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
5
0.2 A
0.1 A
1
0
0
1
2
3
4
5
6
10
o
125 C
o
25 C
o
-25 C
o
-40 C
1
1E-3
7
1
Figure 4. Static Characteristics
Figure 5. DC Current Gain
10
10
HFE = 5
VCE(sat) [V], SATURATION VOLTAGE
HFE = 3
1
0.1
o
125 C
o
25 C
o
- 25 C
o
- 40 C
0.01
1E-3
0.01
0.1
1
1
0.1
o
125 C
o
25 C
o
-25 C
o
-40 C
0.01
1E-3
10
0.01
IC [A], COLLECTOR CURRENT
1
10
Figure 7. Collector-Emitter Saturation Voltage
hFE = 5
10
10
HFE = 20
VCE(sat) [V], SATURATION VOLTAGE
HFE = 10
1
0.1
o
125 C
o
25 C
o
-25 C
o
-40 C
0.01
1E-3
0.1
IC [A], COLLECTOR CURRENT
Figure 6. Collector-Emitter Saturation Voltage
hFE = 3
VCE(sat) [V], SATURATION VOLTAGE
0.1
IC [A], COLLECTOR CURRENT
10
VCE(sat) [V], SATURATION VOLTAGE
0.01
VCE [V], COLLECTOR-EMITTER VOLTAGE
0.01
0.1
1
0.1
o
125 C
o
25 C
0.01
1E-3
10
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 9. Collector-Emitter Saturation Voltage
hFE = 20
Figure 8. Collector-Emitter Saturation Voltage
hFE = 10
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
1
www.fairchildsemi.com
5
FJP2145 — ESBC™ Rated NPN Power Transistor
Typical Performance Characteristics
FJP2145 — ESBC™ Rated NPN Power Transistor
Typical Performance Characteristics (Continued)
2.0
1000
Collector-Base CAPACITANCE, CCB [pF]
1.8
1.6
VCE[V], VOLTAGE
1.4
1.2
1.0
0.8
0.6
IC = 0.4 A
0.4
IC = 1 A
0.2
IC = 2 A
100
10
IC = 3 A
0.0
0.01
0.1
1
1
1
10
100
1000
COLLECTOR-BASE VOLTAGE[V]
IB [mA], BASE CURRENT
Figure 10. Typical Collector Saturation Voltage
Figure 11. Capacitance
150
o
HFE=5, 10, TJ = 25 C, L=166 uH, SRF=684 KHz
1.6
125
1.4
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
1.2
Time [us]
100
Time [ns]
o
HFE = 5, 10, TJ = 25 C, L=166 uH SRF = 684 KHz, 2IB1=IB2, No peaking
75
50
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
1.0
0.8
0.6
0.4
25
0.2
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.5
5.0
1.0
IC [A], COLLECTOR CURRENT
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IC [A], COLLECTOR CURRENT
Figure 13. Inductive Load Collector Current
Storage - Time (tstg)
Figure 12. Inductive Load Collector Current
Fall - Time (tf)
180
500
o
HFE=5, 10, TJ = 25 C, L=166 uH, SRF=684 KHz
o
HFE=5, 10, TJ = 25 C, L=166 uH, SRF=684 KHz
450
400
160
Time [ns]
Time [ns]
350
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
300
250
200
140
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
150
100
50
120
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.5
5.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Figure 15. Inductive Load Collector Voltage
Rise - Time (tr)
Figure 14. Inductive Load Collector Voltage
Fall - Time (tf)
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
1.0
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
www.fairchildsemi.com
6
600
7
o
HFE=5, 10, TJ = 25 C, L=166 uH, SRF=684 KHz
VDD = +/- 50 V, RLOAD = OPEN, HFE =4
IC [A], COLLECTOR CURRENT
550
500
450
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
Time [ns]
400
350
300
250
200
150
6
5
4
3
2
100
50
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1
600
5.0
700
800
900
1000 1100 1200 1300 1400 1500 1600 1700
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 16. Inductive Load Collector Current / Voltage
Crossover (tc)
Figure 17. BJT RBSOA
7
o
VDD = +/-50 V, RLOAD = Open, HFE = 4
TC = 25 C
Single 80 μs Pulse
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
6
5
4
3
2
1
0
600
700
800
900
10
1
0.1
1000 1100 1200 1300 1400 1500 1600 1700
0
500
1000
1500
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 18. ESBC RBSOA
Figure 19. Crossover FBSOA
2000
PC[W], POWER DISSIPATION
150
120
90
60
30
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 20. Power Derating
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
7
FJP2145 — ESBC™ Rated NPN Power Transistor
Typical Performance Characteristics (Continued)
FJP2145 — ESBC™ Rated NPN Power Transistor
Test Circuits
Figure 21. Test Circuit For Inductive Load and Reverse Bias Safe Operating
}
}
sT
sT
}
pj A
pi
pj A
A
k|{
k|{
R\G}
Figure 22. Energy Rating Test Circuit
Figure 24. FBSOA
Figure 23. Ft Measurement
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
8
FJP2145 — ESBC™ Rated NPN Power Transistor
Test Circuits (Continued)
Figure 25. Simplified Saturated Switch Driver Circuit
Functional Test Waveforms
Figure 26. Crossover Time Measurement
toff
90% Vce
90% Ic
10% Vce
10% Ic
Figure 27. Saturated Switching Waveform
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
9
Figure 29. Storage Time - ESBC FET Gate (Off) to IC
Fall - Time
Figure 28. Storage Time - Common Emitter Base
Turn Off (Ib2) to IC Fall - Time
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
10
FJP2145 — ESBC™ Rated NPN Power Transistor
Functional Test Waveforms (Continued)
`
X
30Watts
ZW~
100 - 800V DC
YWWTXWWW}Gkj
xGyGXYWro¡
Y
X
Y
|m[WW^
Y^Wr
100kΩ
Z
tiyYWX\Wj{{|
Z
24V@3.3A
Y[}gXUY\h
X
XWWWm
Z\}
Y
XWWWm
Z\}
^
\
[
w]rl[[Wh
twX]W_i[^Xh
680μF
XYWm
[\W}
YY}
YL
100kΩ
Y^Wr
FJP2145
mqhmzX\XWh{|
Xu[X[_
Y^Wr
100kΩ
}
100kΩ
100K
Y^Wr
Q
]
680μF
XYWm
[\W}
_
FDC655
mkj]\\
v|{
\
o}
ttzkZW^W
jz
100kΩ
Y^Wr
oXXhnX}t
kl{
X
mi
Y
Z
XYTX[}
XWm
[
XY}¡
[}
680μF
XYWm
[\W}
Xu[X[_~z
100kΩ
Y^Wr
XWWm
Y\}
XUWhG
2.5A
limit
QGtGGG
Figure 30. 30 W; Secondary-Side Regulation: 3 Capacitor Input; Quasi Resonant
Driving ESBC Switches
Fairchild
Proprietary
Figure 31. VCC Derived
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
Figure 32. VBIAS Supply Derived
Figure 33. Proportional Drive
www.fairchildsemi.com
11
FJP2145 — ESBC™ Rated NPN Power Transistor
Very Wide Input Voltage Range Supply
FJP2145 — ESBC™ Rated NPN Power Transistor
Physical Dimensions
Figure 34. TO-220, MOLDED, 3-LEAD, JEDEC VARIDATION AB
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
12
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
F-PFS¥
FRFET®
SM
Global Power Resource
GreenBridge¥
Green FPS¥
Green FPS¥ e-Series¥
Gmax¥
GTO¥
IntelliMAX¥
ISOPLANAR¥
Making Small Speakers Sound Louder
and Better™
MegaBuck¥
MICROCOUPLER¥
MicroFET¥
MicroPak¥
MicroPak2¥
MillerDrive¥
MotionMax¥
MotionGrid®
MTi®
MTx®
MVN®
mWSaver®
OptoHiT¥
OPTOLOGIC®
AccuPower¥
AttitudeEngine™
Awinda®
AX-CAP®*
BitSiC¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL¥
Current Transfer Logic¥
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax¥
ESBC¥
®
®
Fairchild
Fairchild Semiconductor®
FACT Quiet Series¥
FACT®
FAST®
FastvCore¥
FETBench¥
FPS¥
OPTOPLANAR®
®
PowerTrench®
PowerXS™
Programmable Active Droop¥
QFET®
QS¥
Quiet Series¥
RapidConfigure¥
¥
Saving our world, 1mW/W/kW at a time™
SignalWise¥
SmartMax¥
SMART START¥
Solutions for Your Success¥
SPM®
STEALTH¥
SuperFET®
SuperSOT¥-3
SuperSOT¥-6
SuperSOT¥-8
SupreMOS®
SyncFET¥
Sync-Lock™
®*
®
TinyBoost
TinyBuck®
TinyCalc¥
TinyLogic®
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TranSiC¥
TriFault Detect¥
TRUECURRENT®*
μSerDes¥
UHC®
Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
VoltagePlus¥
XS™
Xsens™
❺™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE
AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
intended for surgical implant into the body or (b) support or sustain
life, and (c) whose failure to perform when properly used in
cause the failure of the life support device or system, or to affect its
accordance with instructions for use provided in the labeling, can be
safety or effectiveness.
reasonably expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors
are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical
and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise.
Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I73
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
工商网监
湘ICP备2023018690号
