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FJP2145
ESBC™ Rated NPN Power Transistor
Description
ESBC Features (FDC655 MOSFET)
•
•
•
•
•
•
•
VCS(ON)
IC
Equiv. RCS(ON)(1)
0.21 V
2A
0.105 Ω
Low Equivalent On Resistance
Very Fast Switch: 150 kHz
Wide RBSOA: Up to 1100 V
Avalanche Rated
Low Driving Capacitance, No Miller Capacitance
Low Switching Losses
Reliable HV Switch: No False Triggering due to
High dv/dt Transients
The FJP2145 is a low-cost, high-performance power
switch designed to provide the best performance when
used in an ESBC™ configuration in applications such as:
power supplies, motor drivers, smart grid, or ignition
switches. The power switch is designed to operate up to
1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses.
The ESBC™ switch can be driven using off-the-shelf
power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that
combines low-input capacitance and fast switching. The
ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.
Applications
The FJP2145 provides exceptional reliability and a large
operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The device is
avalanche rated and has no parasitic transistors, so is not
prone to static dv/dt failures.
• High-Voltage, High-Speed Power Switch
• Emitter-Switched Bipolar/MOSFET Cascode
(ESBC™)
• Smart Meters, Smart Breakers, SMPS,
HV Industrial Power Supplies
The power switch is manufactured using a dedicated
high-voltage bipolar process and is packaged in a highvoltage TO-220 package.
• Motor Drivers and Ignition Drivers
C
C
2
FJP2145
B
1
B
1
1.Base
FDC655
TO-220
2.Collector
G
3.Emitter
Figure 1. Pin Configuration
E
3
S
Figure 2. Internal Schematic Diagram
Figure 3. ESBC Configuration(2)
Ordering Information
Part Number
Marking
Package
Packing Method
FJP2145TU
J2145
TO-220
TUBE
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
FJP2145 — ESBC™ Rated NPN Power Transistor
March 2015
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
5
A
IB
Base Current
1.5
A
PC
Collector Dissipation (TC = 25°C)
120
W
TJ
Operating and Junction Temperature Range
-55 to +125
°C
Storage Temperature Range
-55 to +150
°C
15
mJ
TSTG
(4)
EAR
Avalanche Energy (TJ = 25°C, 1.2 mH)
Notes:
3. Pulse test is pulse width ≤ 5 ms, duty cycle ≤ 10%.
4. Lab characterization data only for reference.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Max.
Unit
RθjC
Thermal Resistance, Junction to Case
Parameter
1.04
°C/W
RθjA
Thermal Resistance, Junction to Ambient
78.72
°C/W
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
2
FJP2145 — ESBC™ Rated NPN Power Transistor
Absolute Maximum Ratings(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
BVCBO
Collector-Base Breakdown Voltage
IC = 1 mA, IE = 0
1100
V
BVCEO
Collector-Emitter Breakdown
Voltage
IC = 5 mA, IB = 0
800
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 1 mA, IC = 0
7
V
ICBO
Collector Cut-off Current
VCB = 800 V, IE = 0
IEBO
Emitter Cut-off Current
hFE1
hFE2
VCE(sat)
VBE(sat)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Conditions
Min.
Typ.
VEB = 5 V, IC = 0
VCE = 5 V, IC = 0.2 A
20
VCE = 5 V, IC = 1 A
8
Max.
Unit
10
μA
10
μA
40
IC = 0.25 A, IB = 0.05 A
0.049
V
IC = 0.5 A, IB = 0.167 A
0.052
V
IC = 1 A, IB = 0.33 A
0.082
V
IC = 1.5 A, IB = 0.3 A
0.151
IC = 500 mA, IB = 50 mA
0.752
IC = 1.5 A, IB = 0.3 A
0.833
2.000
V
V
1.500
V
IC = 2 A, IB = 0.4 A
0.855
V
CIB
Input Capacitance
VEB = 5 V, IC = 0, f = 1 MHz
1.618
pF
COB
Output Capacitance
VCB = 200 V, IE = 0, f = 1 MHz
11.39
pF
Current Gain Bandwidth Product
VCE = 10 V, IC = 0.2 A
15
MHz
fT
Note:
5. Pulse test is pulse width ≤ 5 ms, duty cycle ≤ 10%.
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
3
FJP2145 — ESBC™ Rated NPN Power Transistor
Electrical Characteristics(5)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
fT
Current Gain Bandwidth
Product
Itf
Inductive Current Fall Time
ts
tc
VCC = 100 V, VGS = 10 V, RG = 4 7Ω,
Inductive Storage Time
VClamp = 500 V, IC = 0.5 A,
Inductive Voltage Fall Time
IB = 0.05 A, HFE = 10, LC = 166 μH,
Inductive Voltage Rise Time SRF = 684 kHz
Inductive Crossover Time
Itf
Inductive Current Fall Time
ts
Inductive Storage Time
Vtf
Vtr
Vtf
Vtr
tc
Min.
IC = 0.1 A,VCE = 10 V
VCC = 100 V, VGS = 10 V, RG = 47 Ω,
VClamp = 500 V, IC = 1 A,
Inductive Voltage Fall Time
IB = 0.2 A, HFE = 5, LC = 166 μH,
Inductive Voltage Rise Time SRF = 684 kHz
Inductive Crossover Time
VCSW
Maximum Collector-Source
Voltage at Turn-off without
Snubber
hFE = 5, IC = 2 A
IGS(OS)
Gate-Source Leakage
Current
VGS = ± 20 V
Typ. Max.
Unit
28.40
MHz
95
ns
0.13
ns
135
ns
80
ns
115
ns
50
ns
0.34
ns
150
ns
60
ns
95
ns
1100
V
1
nA
VGS = 10 V, IC = 2 A, IB = 0.67 A, hFE = 3
0.202
V
Collector-Source On
Voltage
VGS = 10 V, IC = 1 A, IB = 0.33 A, hFE = 3
0.111
V
VGS = 10 V, IC = 0.5 A, IB = 0.17 A, hFE = 3
0.067
V
VGS = 10 V, IC = 0.3 A, IB = 0.06 A, hFE = 5
0.060
V
Gate Threshold Voltage
VBS = VGS, IB = 250 μA
1.9
V
Input Capacitance
(VGS = VCB = 0)
VCS = 25 V, f = 1 MHz
470
pF
QGS(tot)
Gate-Source Change
VCB = 0
VGS = 10 V, IC = 6.3 A, VCS = 25 V
9
nC
VGS = 10 V, ID = 6.3 A
21
mΩ
RDS(ON)
Static Drain-to-Source
On Resistance
VGS = 4.5 V, ID = 5.5 A
26
mΩ
VGS = 10 V, ID = 6.3 A, TJ = 125°C
30
mΩ
VCS(ON)
VGS(th)
Ciss
Note:
6. A typical FDC655 MOSFET was used for the specifications above. Values could vary if other Fairchild MOSFETs
are used.
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
4
FJP2145 — ESBC™ Rated NPN Power Transistor
ESBC-Configured Electrical Characteristics(6)
100
VCE = 5 V
IB = 1 A
4
0.9 A
0.8 A
0.7 A
0.6 A
0.5 A
0.4 A
0.3 A
3
2
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
5
0.2 A
0.1 A
1
0
0
1
2
3
4
5
6
10
o
125 C
o
25 C
o
-25 C
o
-40 C
1
1E-3
7
1
Figure 4. Static Characteristics
Figure 5. DC Current Gain
10
10
HFE = 5
VCE(sat) [V], SATURATION VOLTAGE
HFE = 3
1
0.1
o
125 C
o
25 C
o
- 25 C
o
- 40 C
0.01
1E-3
0.01
0.1
1
1
0.1
o
125 C
o
25 C
o
-25 C
o
-40 C
0.01
1E-3
10
0.01
IC [A], COLLECTOR CURRENT
1
10
Figure 7. Collector-Emitter Saturation Voltage
hFE = 5
10
10
HFE = 20
VCE(sat) [V], SATURATION VOLTAGE
HFE = 10
1
0.1
o
125 C
o
25 C
o
-25 C
o
-40 C
0.01
1E-3
0.1
IC [A], COLLECTOR CURRENT
Figure 6. Collector-Emitter Saturation Voltage
hFE = 3
VCE(sat) [V], SATURATION VOLTAGE
0.1
IC [A], COLLECTOR CURRENT
10
VCE(sat) [V], SATURATION VOLTAGE
0.01
VCE [V], COLLECTOR-EMITTER VOLTAGE
0.01
0.1
1
0.1
o
125 C
o
25 C
0.01
1E-3
10
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 9. Collector-Emitter Saturation Voltage
hFE = 20
Figure 8. Collector-Emitter Saturation Voltage
hFE = 10
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
1
www.fairchildsemi.com
5
FJP2145 — ESBC™ Rated NPN Power Transistor
Typical Performance Characteristics
FJP2145 — ESBC™ Rated NPN Power Transistor
Typical Performance Characteristics (Continued)
2.0
1000
Collector-Base CAPACITANCE, CCB [pF]
1.8
1.6
VCE[V], VOLTAGE
1.4
1.2
1.0
0.8
0.6
IC = 0.4 A
0.4
IC = 1 A
0.2
IC = 2 A
100
10
IC = 3 A
0.0
0.01
0.1
1
1
1
10
100
1000
COLLECTOR-BASE VOLTAGE[V]
IB [mA], BASE CURRENT
Figure 10. Typical Collector Saturation Voltage
Figure 11. Capacitance
150
o
HFE=5, 10, TJ = 25 C, L=166 uH, SRF=684 KHz
1.6
125
1.4
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
1.2
Time [us]
100
Time [ns]
o
HFE = 5, 10, TJ = 25 C, L=166 uH SRF = 684 KHz, 2IB1=IB2, No peaking
75
50
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
1.0
0.8
0.6
0.4
25
0.2
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.5
5.0
1.0
IC [A], COLLECTOR CURRENT
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IC [A], COLLECTOR CURRENT
Figure 13. Inductive Load Collector Current
Storage - Time (tstg)
Figure 12. Inductive Load Collector Current
Fall - Time (tf)
180
500
o
HFE=5, 10, TJ = 25 C, L=166 uH, SRF=684 KHz
o
HFE=5, 10, TJ = 25 C, L=166 uH, SRF=684 KHz
450
400
160
Time [ns]
Time [ns]
350
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
300
250
200
140
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
150
100
50
120
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.5
5.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Figure 15. Inductive Load Collector Voltage
Rise - Time (tr)
Figure 14. Inductive Load Collector Voltage
Fall - Time (tf)
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
1.0
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
www.fairchildsemi.com
6
600
7
o
HFE=5, 10, TJ = 25 C, L=166 uH, SRF=684 KHz
VDD = +/- 50 V, RLOAD = OPEN, HFE =4
IC [A], COLLECTOR CURRENT
550
500
450
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
Time [ns]
400
350
300
250
200
150
6
5
4
3
2
100
50
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1
600
5.0
700
800
900
1000 1100 1200 1300 1400 1500 1600 1700
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 16. Inductive Load Collector Current / Voltage
Crossover (tc)
Figure 17. BJT RBSOA
7
o
VDD = +/-50 V, RLOAD = Open, HFE = 4
TC = 25 C
Single 80 μs Pulse
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
6
5
4
3
2
1
0
600
700
800
900
10
1
0.1
1000 1100 1200 1300 1400 1500 1600 1700
0
500
1000
1500
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 18. ESBC RBSOA
Figure 19. Crossover FBSOA
2000
PC[W], POWER DISSIPATION
150
120
90
60
30
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 20. Power Derating
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
7
FJP2145 — ESBC™ Rated NPN Power Transistor
Typical Performance Characteristics (Continued)
FJP2145 — ESBC™ Rated NPN Power Transistor
Test Circuits
Figure 21. Test Circuit For Inductive Load and Reverse Bias Safe Operating
}
}
sT
sT
}
pj A
pi
pj A
A
k|{
k|{
R\G}
Figure 22. Energy Rating Test Circuit
Figure 24. FBSOA
Figure 23. Ft Measurement
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
8
FJP2145 — ESBC™ Rated NPN Power Transistor
Test Circuits (Continued)
Figure 25. Simplified Saturated Switch Driver Circuit
Functional Test Waveforms
Figure 26. Crossover Time Measurement
toff
90% Vce
90% Ic
10% Vce
10% Ic
Figure 27. Saturated Switching Waveform
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
9
Figure 29. Storage Time - ESBC FET Gate (Off) to IC
Fall - Time
Figure 28. Storage Time - Common Emitter Base
Turn Off (Ib2) to IC Fall - Time
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
10
FJP2145 — ESBC™ Rated NPN Power Transistor
Functional Test Waveforms (Continued)
`
X
30Watts
ZW~
100 - 800V DC
YWWTXWWW}Gkj
xGyGXYWro¡
Y
X
Y
|m[WW^
Y^Wr
100kΩ
Z
tiyYWX\Wj{{|
Z
24V@3.3A
Y[}gXUY\h
X
XWWWm
Z\}
Y
XWWWm
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^
\
[
w]rl[[Wh
twX]W_i[^Xh
680μF
XYWm
[\W}
YY}
YL
100kΩ
Y^Wr
FJP2145
mqhmzX\XWh{|
Xu[X[_
Y^Wr
100kΩ
}
100kΩ
100K
Y^Wr
Q
]
680μF
XYWm
[\W}
_
FDC655
mkj]\\
v|{
\
o}
ttzkZW^W
jz
100kΩ
Y^Wr
oXXhnX}t
kl{
X
mi
Y
Z
XYTX[}
XWm
[
XY}¡
[}
680μF
XYWm
[\W}
Xu[X[_~z
100kΩ
Y^Wr
XWWm
Y\}
XUWhG
2.5A
limit
QGtGGG
Figure 30. 30 W; Secondary-Side Regulation: 3 Capacitor Input; Quasi Resonant
Driving ESBC Switches
Fairchild
Proprietary
Figure 31. VCC Derived
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
Figure 32. VBIAS Supply Derived
Figure 33. Proportional Drive
www.fairchildsemi.com
11
FJP2145 — ESBC™ Rated NPN Power Transistor
Very Wide Input Voltage Range Supply
FJP2145 — ESBC™ Rated NPN Power Transistor
Physical Dimensions
Figure 34. TO-220, MOLDED, 3-LEAD, JEDEC VARIDATION AB
© 2013 Fairchild Semiconductor Corporation
FJP2145 Rev. 1.1
www.fairchildsemi.com
12
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
F-PFS¥
FRFET®
SM
Global Power Resource
GreenBridge¥
Green FPS¥
Green FPS¥ e-Series¥
Gmax¥
GTO¥
IntelliMAX¥
ISOPLANAR¥
Making Small Speakers Sound Louder
and Better™
MegaBuck¥
MICROCOUPLER¥
MicroFET¥
MicroPak¥
MicroPak2¥
MillerDrive¥
MotionMax¥
MotionGrid®
MTi®
MTx®
MVN®
mWSaver®
OptoHiT¥
OPTOLOGIC®
AccuPower¥
AttitudeEngine™
Awinda®
AX-CAP®*
BitSiC¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL¥
Current Transfer Logic¥
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax¥
ESBC¥
®
®
Fairchild
Fairchild Semiconductor®
FACT Quiet Series¥
FACT®
FAST®
FastvCore¥
FETBench¥
FPS¥
OPTOPLANAR®
®
PowerTrench®
PowerXS™
Programmable Active Droop¥
QFET®
QS¥
Quiet Series¥
RapidConfigure¥
¥
Saving our world, 1mW/W/kW at a time™
SignalWise¥
SmartMax¥
SMART START¥
Solutions for Your Success¥
SPM®
STEALTH¥
SuperFET®
SuperSOT¥-3
SuperSOT¥-6
SuperSOT¥-8
SupreMOS®
SyncFET¥
Sync-Lock™
®*
®
TinyBoost
TinyBuck®
TinyCalc¥
TinyLogic®
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TranSiC¥
TriFault Detect¥
TRUECURRENT®*
μSerDes¥
UHC®
Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
VoltagePlus¥
XS™
Xsens™
❺™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
intended for surgical implant into the body or (b) support or sustain
life, and (c) whose failure to perform when properly used in
cause the failure of the life support device or system, or to affect its
accordance with instructions for use provided in the labeling, can be
safety or effectiveness.
reasonably expected to result in a significant injury of the user.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I73
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