Is Now Part of
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FJP2160D
ESBC™ Rated NPN Silicon Transistor
Applications
Description
• High Voltage and High Speed Power Switch
Application
• Emitter-Switched Bipolar/MOSFET Cascode
Application (ESBC™)
• Smart Meter, Smart Breakers,
HV Industrial Power Supplies
• Motor Driver and Ignition Driver
The FJP2160D is a low-cost, high performance power
switch designed to provide the best performance when
used in an ESBC™ configuration in applications such as:
power supplies, motor drivers, Smart Grid, or ignition
switches. The power switch is designed to operate up to
1600 volts and up to 3 amps while providing exceptionally
low on-resistance and very low switching losses.
ESBC Features (FDC655 MOSFET)
VCS(ON)
IC
Equiv RCS(ON)
0.131 V
0.5 A
0.261 Ω(1)
•
•
•
•
•
Low Equivalent On Resistance
Very Fast Switch: 150 KHz
Squared RBSOA: Up to 1600 V
Avalanche Rated
Low Driving Capacitance, no Miller Capacitance
(Typ. 12 pF Capacitance at 200 V)
• Low Switching Losses
• Reliable HV switch: No False Triggering due to
High dv/dt Transients.
The ESBC™ switch is designed to be easy to drive using
off-the-shelf power supply controllers or drivers. The
ESBC™ MOSFET is a low-voltage, low-cost, surface
mount device that combines low-input capacitance and
fast switching, The ESBC™ configuration further minimizes the required driving power because it does not
have Miller capacitance.
The FJP2160D provides exceptional reliability and a
large operating range due to its square reverse-bias-safeoperating-area (RBSOA) and rugged design. The device
is avalanche rated and has no parasitic transistors so is
not prone to static dv/dt failures.
C
C
2
FJP2160D
B
1
B
FDC655
1
1.Base
TO-220
2.Collector
E
3.Emitter
G
3
S
Figure 1. Pin Configuration
Figure 2. Internal Schematic Diagram Figure 3. ESBC Configuration(2)
Ordering Information
Part Number
Marking
Package
Packing Method
FJP2160DTU
J2160D
TO-220 3L
Tube
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
FJP2160D — ESBC™ Rated NPN Silicon Transistor
January 2016
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
1600
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current
2
A
ICP
Collector Current (Pulse)
3
A
IB
Base Current
1
A
IBP
Base Current (Pulse)
2
A
PD
Power Dissipation (TC = 25°C)
100
W
TJ
Operating and Junction Temperature Range
- 55 to +125
°C
TSTG
Storage Temperature Range
- 65 to +150
°C
EAS
Avalanche Energy (TJ = 25°C, 8 mH)
3.5
mJ
Max.
Unit
1.25
°C/W
80
°C/W
Note:
3. Pulse test: pulse width = 20 μs, duty cycle ≤ 10%
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Rθjc
Thermal Resistance, Junction-to-Case
Rθja
Thermal Resistance, Junction-to-Ambient
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
2
FJP2160D — ESBC™ Rated NPN Silicon Transistor
Absolute Maximum Ratings(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ. Max.
Unit
BVCBO
Collector-Base Breakdown Voltage
IC = 0.5 mA, IE = 0
1600
1689
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 5 mA, IB = 0
800
870
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 0.5 mA, IC = 0
12.0
14.8
V
ICES
Collector Cut-Off Current
VCE = 1600 V, VBE = 0
0.01
100
ICEO
Collector Cut-Off Current
VCE = 800 V, IB = 0
0.01
100
μA
IEBO
Emitter Cut-Off Current
VEB = 12 V, IC = 0
0.05
500
μA
hFE
DC Current Gain
35
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE = 3 V, IC = 0.4 A
20
29
VCE = 10 V, IC = 5 mA
20
43
IC = 0.25 A, IB = 0.05 A
0.16
0.45
IC = 0.5 A, IB = 0.167 A
0.12
0.35
IC = 1 A, IB = 0.33 A
0.25
0.75
IC = 500 mA, IB = 50 mA
0.74
1.20
IC = 2 A, IB = 0.4 A
0.85
1.20
1000
μA
V
V
Cib
Input Capacitance
VEB = 10 V, IC = 0, f = 1 MHz
745
Cob
Output Capacitance
VCB = 200 V, IE = 0, f = 1 MHz
15
pF
fT
Current Gain Bandwidth Product
IC = 0.1 A,VCE = 10 V
5
MHz
VF
Diode Forward Voltage
IF = 0.4 A
0.76
1.20
IF = 1 A
0.83
1.50
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
pF
V
www.fairchildsemi.com
3
FJP2160D — ESBC™ Rated NPN Silicon Transistor
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
fT
Parameter
Conditions
tc
Current Gain Bandwidth Product IC = 0.1 A,VCE = 10 V
Inductive Current Fall Time
VGS = 10 V, RG = 47 Ω,
Inductive Storage Time
VClamp = 500 V,
Inductive Voltage Fall Time
tp = 3.1 μs, IC = 0.3 A,
IB = 0.03 A, LC = 1 mH,
Inductive Voltage Rise Time
SRF = 480 kHz
Inductive Crossover Time
Itf
Inductive Current Fall Time
ts
Inductive Storage Time
Vtf
Inductive Voltage Fall Time
Vtr
Inductive Voltage Rise Time
tc
Inductive Crossover Time
Itf
ts
Vtf
Vtr
Maximum Collector Source VolthFE = 5, IC = 2 A
age at Turn-off without Snubber
IGS(OS)
Gate-Source Leakage Current
Collector-Source On Voltage
VGS = ±20 V
Typ. Max.
25
VGS = 10 V, RG = 47 Ω,
VClamp = 500 V,
tp = 10 μs, IC = 1 A,
IB = 0.2 A, LC = 1 mH,
SRF = 480 kHz
VCSW
VCS(ON)
Min.
Unit
MHz
137
ns
350
ns
120
ns
100
ns
137
ns
35
ns
980
ns
30
ns
195
ns
210
ns
1600
V
1.0
VGS = 10 V, IC = 2 A, IB = 0.67 A,
hFE = 3
2.210
VGS = 10 V, IC = 1 A, IB = 0.33 A,
hFE = 3
0.321
VGS = 10 V, IC = 0.5 A, IB = 0.17 A,
hFE = 3
0.131
VGS = 10 V, IC = 0.3 A, IB = 0.06 A,
hFE = 5
0.166
nA
V
Gate Threshold Voltage
VBS = VGS, IB = 250 μA
1.9
V
Input Capacitance
(VGS = VCB = 0)
VCS = 25 V, f = 1 MHz
470
pF
QGS(tot)
Gate-Source Charge
VCB = 0
VGS = 10 V, IC = 8 A, VCS = 25 V
9
nC
VGS = 10 V, ID = 6.3 A
21
rDS(ON)
Static Drain-Source
On Resistance
VGS = 4.5 V, ID = 5.5 A
26
VGS = 10 V, ID = 6.3 A, TJ = 125°C
30
VGS(th)
Ciss
mΩ
Note:
4. Used typical FDC655 MOSFET values in table. Values can vary if other Fairchild MOSFETs are used.
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
4
FJP2160D — ESBC™ Rated NPN Silicon Transistor
ESBC Configured Electrical Characteristics(4)
FJP2160D — ESBC™ Rated NPN Silicon Transistor
Typical Performance Characteristics
3
V C E =1 0 V
2
100
o
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
1A
900m A
800m A
700m A
600m A
500m A
400m A
300m A
200m A
IB = 1 0 0 m A
1
0
0
1
2
3
4
5
6
T J =1 2 5 C
o
T J = 25 C
10
1
7
1
V C E [V ], C O L L E C T O R E M IT T E R V O L T AG E
Figure 4. Static Characteristic
1000
100
IC = 5 IB
IC = 3 IB
VCE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
100
Figure 5. DC Current Gain
100
10
o
Ta = 125 C
1
o
Ta = 25 C
0.1
o
Ta = - 25 C
0.01
1E-3
0.01
0.1
1
10
o
Ta = 25 C
o
Ta = -25 C
0.1
1E-3
10
0.1
1
10
Figure 7. Collector-Emitter Saturation Voltage
hFE=5
100
100
IC = 20 IB
VCE(sat) [V], SATURATION VOLTAGE
IC = 10 IB
10
o
Ta = 125 C
o
Ta = 25 C
1
o
Ta = -25 C
0.01
0.1
1
10
o
Ta = 125 C
o
Ta = 25 C
1
0.1
1E-3
10
o
Ta = -25 C
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 8. Collector-Emitter Saturation Voltage
hFE=10
Figure 9. Collector-Emitter Saturation Voltage
hFE=20
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
0.01
IC [A], COLLECTOR CURRENT
Figure 6. Collector-Emitter Saturation Voltage
hFE=3
0.1
1E-3
o
Ta = 125 C
1
IC [A], COLLECTOR CURRENT
VCE(sat) [V], SATURATION VOLTAGE
10
I C [m A], C O L L E C T O R C U R R E N T
www.fairchildsemi.com
5
2
1000
o
T J =2 5 C
CAPACITANCE [pF]
VCE[V], VOLTAGE
3 .0 A
2 .0 A
1 .0 A
1
0 .4 A
IC = 0 .2 A
0
1
10
100
100
Cob (Emitter Open)
10
1
1k
Cob (Emitter Grounded)
1
10
IB [m A], B AS E C U R R E N T
100
1000
Figure 10. Typical Collector Saturation Voltage
Figure 11. Capacitance
2.0
250
o
o
ta = 25 C L=1mH SRF=480KHz
225
ta = 25 C L=1mH SRF=480KHz
1.8
hfe=10 common emitter
200
1.6
175
1.4
Time [us]
150
Time [ns]
10000
COLLECTOR-BASE VOLTAGE[V]
125
hfe=5 common emitter
100
hfe=10 common emitter
hfe=5 common emitter
1.2
1.0
hfe=5 ESBC
0.8
75
0.6
50
25
hfe=10 ESBC
hfe=5 ESBC
0.4
hfe=10 ESBC
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.2
0.2
2.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 12. Inductive Load
Collector Current Fall-time (tf)
Figure 13. Inductive Load
Collector Current Storage time (tstg)
300
200
o
o
ta = 25 C L=1mH SRF=480KHz
180
ta = 25 C L=1mH SRF=480KHz
280
260
240
140
220
120
200
100
Time [ns]
Time [ns]
160
hfe=10 common emitter
80
hfe=10 ESBC
60
0
0.2
160
hfe=5 common emitter
140
hfe=10 common emitter
100
hfe=5 common emitter
0.4
0.6
0.8
80
hfe=5 ESBC
1.0
1.2
hfe=10 ESBC
60
1.4
1.6
1.8
0.2
2.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 14. Inductive Load
Collector Voltage Fall-time (tf)
Figure 15. Inductive Load
Collector Voltage Rise-time (tr)
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
180
120
40
20
hfe=5 ESBC
www.fairchildsemi.com
6
FJP2160D — ESBC™ Rated NPN Silicon Transistor
Typical Performance Characteristics (Continued)
300
3
o
ta = 25 C L=1mH SRF=480KHz
280
VDD = +/-50V, RLOAD = 500KΩ
IC [A], COLLECTOR CURRENT
260
240
hfe=5 ESBC
Time [ns]
220
200
hfe=10 common emitter
180
hfe=5 common emitter
160
140
hfe=10 ESBC
120
VBE(off) = 5V
2
1
100
0
80
0.2
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
200
400
600
800
1000
1200
1400
1600
1800
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 16. Inductive Load
Collector Current/Voltage Crossover (tc)
Figure 17. BJT Reverse Bias Safe Operating Area
3
o
TC = 25 C
HFE = 4
IC [mA], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
VDD = +/-50V, RLOAD = 500Kohms
2
1
Single 80us Pulse
10
1
0.1
0
0
200
400
600
800
1000
1200
1400
1600
1800
0
2000
500
1000
1500
2000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 18. ESBC RBSOA
Figure 19. Crossover Forward Bias Safe Operating
Area
PD [W], POWER DISSIPATION
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
200
C o
T [ C], CASE TEMPERATURE
Figure 20. Power Derating
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
7
FJP2160D — ESBC™ Rated NPN Silicon Transistor
Typical Performance Characteristics (Continued)
FJP2160D — ESBC™ Rated NPN Silicon Transistor
Test Circuits
Figure 21. Test Circuit For Inductive Load and Reverse Bias Safe Operating
}
}
sT
sT
}
pj A
pi
pj A
A
k|{
k|{
R\G}
Figure 22. Energy Rating Test Circuit
VCE
Figure 24. FBSOA
Figure 23. Ft Measurement
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
8
FJP2160D — ESBC™ Rated NPN Silicon Transistor
Test Circuits (Continued)
Figure 25. Simplified Saturated Switch Driver Circuit
Functional Test Waveforms
Figure 26. Crossover Time Measurement
90% Vce
90% Ic
10% Vce
10% Ic
Figure 27. Saturated Switching Waveform
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
9
Figure 29. Storage Time - ESBC FET
Gate (off) to Ic Fall-time
Figure 28. Storage Time - Common Emitter
Base turn off (Ib2) to Ic Fall-time
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
10
FJP2160D — ESBC™ Rated NPN Silicon Transistor
Functional Test Waveforms (Continued)
- 8watt; SecReg: 3 cap input; Quasi Resonant
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Figure 30. Very Wide Input Voltage Range Supply
Driving ESBC Switches
Fairchild
Proprietary
Figure 31. Vcc Derived
Figure 32. Vbias Supply Derived
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
Figure 33. Proportional Drive
www.fairchildsemi.com
11
FJP2160D — ESBC™ Rated NPN Silicon Transistor
Very Wide Input Voltage Range Supply
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
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