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FJP3305
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Regulator
1
1.Base
Absolute Maximum Ratings
Symbol
TO-220
2.Collector
3.Emitter
TC = 25°C unless otherwise noted
Parameter
Value
Units
V CBO
Collector-Base Voltage
700
V
V CEO
Collector-Emitter Voltage
400
V
V EBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
4
A
ICP
Collector Current (Pulse)
8
A
IB
Base Current
2
A
PC
Collector Dissipation (TC = 25°C)
75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
© 2007 Fairchild Semiconductor Corporation
FJP3305 Rev. 1.0.0
www.fairchildsemi.com
1
FJP3305 — High Voltage Fast-Switching NPN Power Transistor
October 2008
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max
Units
BV CBO
Collector-Base Breakdwon Voltage
IC = 500mA, IE = 0
700
V
BV CEO
Collector-Emitter Breakdown Voltage
IC = 5mA, IB = 0
400
V
BV EBO
Emitter-Base Breakdown Voltage
IE = 500mA, IC = 0
9
V
ICBO
Collector Cut-off Current
VCB = 700V, IE = 0
1
mA
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
1
mA
hFE1
hFE2
DC Current Gain *
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
V CE(sat)
Collector-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 4A, IB = 1A
0.5
0.6
1.0
V
V
V
V BE(sat)
Base-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
1.2
1.6
V
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
C ob
Output Capacitance
VCB = 10V, f = 1MHz
tON
Turn On Time
tSTG
Storge Time
tF
Fall Time
VCC = 125V, IC = 2A
IB1 = -IB2 = 0.4A
RL = 62.5W
19
8
35
40
4
MHz
65
pF
0.8
ms
4.0
ms
0.9
ms
* Pulse Test: PW £ 300ms, Duty Cycle £ 2%
hFE Classification
Classification
H1
H2
hFE1
19 ~ 28
26 ~ 35
© 2007 Fairchild Semiconductor Corporation
FJP3305 Rev. 1.0.0
www.fairchildsemi.com
2
FJP3305 — High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain (R-Grade)
100
5.0
VCE = 5V
4.5
IC [A], COLLECTOR CURRENT
O
4.0
IB = 300mA
hFE, DC CURRENT GAIN
3.5
3.0
2.5
IB = 100mA
2.0
1.5
Ta = 75 C
O
IB = 50mA
1.0
Ta = 125 C
O
Ta = - 25 C
O
Ta = 25 C
10
0.5
0.0
0
1
2
3
4
5
6
7
8
9
1
0.01
10
0.1
Figure 3. DC Current Gain (O-Grade)
10
VCE(sat) [V], SATURATION VOLTAGE
VCE = 5V
O
O
Ta = 75 C
hFE, DC CURRENT GAIN
Ta = 125 C
O
Ta = - 25 C
O
Ta = 25 C
10
1
0.01
0.1
1
IC = 4 IB
O
Ta = 125 C
1
O
Ta = 75 C
O
Ta = - 25 C
0.1
O
Ta = 25 C
0.01
0.01
10
0.1
Figure 5. Saturatin Voltage (O-Grade)
10
Figure 6. Saturation Voltage (R-Grade)
10
10
IC = 4 IB
VBE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
1
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CUTRRENT
O
Ta = 125 C
1
O
Ta = 75 C
O
Ta = - 25 C
0.1
O
Ta = 25 C
0.1
1
IC = 4 IB
O
1
Ta = 25 C
O
Ta = - 25 C
O
Ta = 125 C
O
Ta = 75 C
0.1
0.01
0.01
10
IC [A], COLLECTOR CURRENT
0.1
1
10
IC [A], COLLECTOR CURRENT
© 2007 Fairchild Semiconductor Corporation
FJP3305 Rev. 1.0.0
10
Figure 4. Saturation Voltage (R-Grade)
100
0.01
0.01
1
IC [A], COLLECTOR CUTRRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
www.fairchildsemi.com
3
FJP3305 — High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
(Continued)
Figure 7. Saturation Voltage (O-Grade)
Figure 8. Switching Time
10
10
tF & tSTG [ms], SWITCHING TIME
VCE(sat) [V], SATURATION VOLTAGE
IC = 4 IB
O
O
1 Ta = - 25 C
Ta = 25 C
O
Ta = 125 C
O
Ta = 75 C
0.1
0.01
0.01
0.1
1
tSTG
1
tF
0.1
IB1 = - IB2 = 0.4A
VCC = 125V
0.01
0.1
10
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 9. Reverse Biased Safe Operating Area
Figure 10. Forward Biased Safe Operating Area
100
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
10
IB1=2A, RB2=0
1
0.1
O
TC = 25 C
Single Pulse
0.01
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
500m s
5ms
IC (DC)
VCC=50V, L=1mH
1
10
1ms
IC (Pulse)
10
1
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 11. Power Derating
100
PC[W], POWER DISSIPATION
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
o
Tc[ C], CASE TEMPERATURE
© 2007 Fairchild Semiconductor Corporation
FJP3305 Rev. 1.0.0
www.fairchildsemi.com
4
FJP3305 — High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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