FJP3835TU

FJP3835 FJP3835 Power Amplifier • High Current Capability : IC=8A • High Power Dissipation • Wide S.O.A TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value 200 Units V 120 V 8 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A PC Collector Dissipation (TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=5mA, IE=0 Min. 200 120 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 ICBO Collector Cut-off Current VCB=80V, IE=0 IEBO hFE Emitter Cut-off Current * DC Current Gain Typ. Units V V 8 V VEB=4V, IC=0 VCE=4V, IC=3A Max. 120 0.1 mA 0.1 mA 250 VCE(sat) Collector-Emitter Saturation Voltage IC=3A, IB=0.3A 0.5 VBE(sat) Base-Emitter On Voltage IC=3A, IB=0.3A 1.2 fT Current Gain Bandwidth Product VCE=5V, IC=1A V V 30 MHz Cob Output Capacitance VCB=10V, f=1MHz 210 pF tON Turn On Time 0.26 µs tF Fall Time 0.68 µs tSTG Storage Time VCC=20V, IC=1A=10IB1=-10IB2 RL=20Ω 6.68 µs * Pulse Test : PW=20µs ©2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FJP3835 Typical Characteristics 1000 7 IB = 35mA VCE = 4V hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 6 5 4 3 IB = 10mA 2 IB = 5mA o o TC = 125 C o o TC = - 25 C 10 0 2 4 6 8 0.01 0.1 VCE [V], COLLECTOR-EMITTER VOLTAGE 10 Figure 2. DC current Gain 1 10 IC = 10 IB VBE(sat), SATURATION VOLTAGE IC = 10 IB 0.1 o TC = - 25 C o TC = 25 C o TC = 75 C o TC = 125 C 0.01 1E-3 0.01 0.1 1 o 1 TC = 25 C o TC = - 25 C o TC = 75 C o TC = 125 C 0.1 0.01 10 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 100 IC MAX. (Pulse) 100ms 10 IC MAX. (DC) 10ms 1 0.1 Single Pulse o TC=25[ C] PC[W], POWER DISSIPATION 100 0.01 0.1 1 IC [A], COLLECTOR CURRENT Figure 1. Static Characterstic VCE(sat) [V], SATURATION VOLTAGE TC = 25 C 100 1 0 IC[A], COLLECTOR CURRENT TC = 75 C 80 60 40 20 0 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2003 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, December 2003 FJP3835 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, December 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I6