FJP5304DTU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time Equivalent Circuit C B TO-220 1 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 4 A ICP * Collector Current (Pulse) 8 A IB Base Current (DC) 2 A IBP * Base Current (Pulse) 4 A PC Collector Dissipation (TC=25°C) 70 W TSTG Storage Temperature - 65 ~ 150 °C * Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0% Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 12 V ICES Collector Cut-off Current VCE = 700V, VEB = 0 100 mA ICEO Collector Cut-off Current VCE = 400V, IB = 0 250 mA IEBO Emitter Cut-off Current VEB = 12V, IC = 0 100 mA © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A www.fairchildsemi.com 1 FJP5304D — NPN Silicon Transistor July 2008 DC Current Gain VCE = 5V, IC = 10mA VCE = 5V, IC = 2A 10 8 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A 0.7 1.0 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A 1.1 1.2 1.3 V Vf Internal Diode Forward Voltage Drop IF = 2A 2.5 V Inductive Load Switching (VCC = 200V) tstg Storage Time tf Fall Time IC = 2A, IB1 = 0.4A VBE(off) = -5V, L = 200μH μs 0.6 0.1 Resistive Load Switching (VCC = 250V) tstg Storage Time tf Fall Time IC = 2A, IB1 = IB2 = 0.4A TP = 30μs 2.9 μs 0.2 * Pulse test: PW≤300μs, Duty cycle≤2% Thermal Characteristics Symbol Parameter Max. Units RθJC Thermal Resistance, Junction to Case 1.78 °C/W RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A www.fairchildsemi.com 2 FJP5304D — NPN Silicon Transistor hFE 100 Vce=5V IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA 4 3 o Ta=125 C hFE,DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 IB = 100mA 2 IB = 50mA 1 o 25 C o -25 C 10 IB = 0 0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 Figure 1. Static Characteristic 10 Ic=5IB O 25 C 1 O Ta=125 C O -25 C 0.1 0.01 0.01 0.1 10 Figure 2. DC Current Gain 1 Ic=5IB VBE[V],SATURATION VOLTAGE VCE(sat)[V],SATURATION VOLTAGE 10 1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 1 O -25 C O 25 C O Ta=125 C 0.1 0.01 10 0.1 IC[A], COLLECTOR CURRENT 1 10 IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 1000 VCC = 250V IC = 5IB1 = -5IB2 tSTG tSTG, tF [ns], TIME tSTG, tF [μs], TIME tSTG 1 tF 0.1 100 tF VClamp = 200V, VBE(OFF)=-5V, RBB=0 Ohm, L=200 uH, IC = 5IB1 0.01 0.1 1 10 0.1 10 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Figure 5. Resitive Load Switching Time © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A 1 Figure 6. Inductive Load Switching Time www.fairchildsemi.com 3 FJP5304D — NPN Silicon Transistor Typical Characteristics 100 100 o IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT TC=25 C 10 1μs 10μs 1 1ms DC 0.1 0.01 10 100 Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 10 1 0.1 0.01 10 1000 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Forward Bias Safe Operating Area Figure 2. Reverse Bias Safe Operating Area PC[W], POWER DISSIPATION 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 3. Power Derating © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A www.fairchildsemi.com 4 FJP5304D — NPN Silicon Transistor Typical Characteristics (Continued) SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com