FJP5554TU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FJP5554 NPN Silicon Transistor Features • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability C 2 E 3 1 B Application 1 • Electronic Ballast • Switch Mode Power Supplies TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number Marking Package Packing Method FJP5554TU J5554 TO-220 Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Units BVCBO Collector-Base Voltage 1050 V BVCEO Collector-Emitter Voltage 400 V BVEBO Emitter-Base Voltage 15 V IC Collector Current (DC) 4 A ICP Collector Current (Pulse) 8 A IB Base Current (DC) 2 A IBP Base Current (Pulse) 4 A TJ Junction Temperature 150 °C - 55 to +150 °C Value Units 70 W 1.78 °C/W TSTG Parameter Storage Junction Temperature Range Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol PD Rθjc (1) Parameter Total Device Dissipation TC = 25°C Thermal Resistance, Junction to Case Note: 1. Rθjc test fixture under infinite cooling condition. © 2005 Fairchild Semiconductor Corporation Rev. 1.2.0 www.fairchildsemi.com 1 FJP5554 — NPN Silicon Transistor June 2013 Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdown Voltage IC = 500 μA, IE = 0 1050 V BVCEO Collector-Emitter Breakdown Voltage IC = 5 mA, IB = 0 400 V BVEBO 15 Emitter-Base Breakdown Voltage IE = 1 mA, IC = 0 23 V ICBO Collector Cut-Off Current VCB = 1050 V, IE = 0 1 mA ICEO Collector Cut-Off Current VCB = 400 V, IB = 0 250 μA IEBO Emitter Cut-Off Current 1 mA hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage tON Turn-On Time tSTG Storage Time tF EAS Note: VEB = 15 V, IC = 0 VCE = 5 V, IC = 0.1 A 45 100 VCE = 3 V, IC = 0.8 A 20 50 IC = 1 A, IB = 0.2 A 0.5 V IC = 3.5 A, IB = 1.0 A 1.5 V IC = 3.5 A, IB = 1.0 A 1.5 V 1.0 μs 1.2 μs 0.3 μs Fall Time VCC =125 V, IC =0.5 A, IB1 = 45 mA, IB2 = 0.5 A, RL = 250 Ω Avalanche Energy L = 2 mH 6 mJ 2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. © 2005 Fairchild Semiconductor Corporation Rev. 1.2.0 www.fairchildsemi.com 2 FJP5554 — NPN Silicon Transistor Electrical Characteristics(2) o 3.0 2.5 IB=150mA IB=100mA 2.0 IB=50mA 1.5 VCE=3V o IB=350mA 3.5 hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 4.0 1.0 TC= 125 C TC= 75 C 100 o TC= - 25 C o TC= 25 C 10 0.5 1 0.01 0.0 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characterstic Figure 2. DC Current Gain 10 TC= 75 C o hFE, DC CURRENT GAIN VCE(SAT) [V], SATURATION VOLTAGE VCE=5V o TC= 125 C 100 o o TC= - 25 C TC= 25 C 10 1 0.01 0.1 1 IC=3.5 IB o TC= 75 C 1 o TC= 125 C o TC= 25 C o TC= - 25 C 0.1 0.01 0.1 10 IC [A], COLLECTOR CURRENT Figure 3. DC Current Gain 1000 IC=3.5 IB COB [pF], OUTPUT CAPACITANCE VBE(sat) [V], SATURATION VOLTAGE 10 Figure 4. Collector-Emitter Saturation Voltage 10 o 1 1 IC [A], COLLECTOR CURRENT TC= 25 C o TC= - 25 C o TC= 125 C o TC= 75 C 0.1 0.1 1 100 10 0.1 10 IC [A], COLLECTOR CURRENT 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Base-Emitter Saturation Voltage © 2005 Fairchild Semiconductor Corporation Rev. 1.2.0 f = 1MHz, IE=0 Figure 6. Output Capacitance www.fairchildsemi.com 3 FJP5554 — NPN Silicon Transistor Typical Performance Characteristics 10 100 Single Pulse o TC=25 C IC [A], COLLECTOR-CURRENT IC [A], COLLECTOR CURRENT 9 8 7 6 5 4 VBE(off)=-5V RBE(off)=1 ohm 3 VCC=50V, IB1=1.2A 2 L=1mH 1 0 200 400 600 800 1000 Pulse 100ms 10ms 1ms DC 1 0.1 0.01 10 1200 VCE [V], COLLECTOR-EMITTER VOLTAGE 1000 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Biased Safe Operating Area PC [W], COLLECTOR POWER DISSIPATION 10 Figure 8. Forward Biased Safe Operating Area 100 80 60 40 20 0 0 25 50 75 100 125 150 o TC [ C], CASE TEMPERATURE Figure 9. Power Derating Curve © 2005 Fairchild Semiconductor Corporation Rev. 1.2.0 www.fairchildsemi.com 4 FJP5554 — NPN Silicon Transistor Typical Performance Characteristics (Continued) SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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