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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FJP5555
NPN Silicon Transistor
Features
• Fast Speed Switching
• Wide Safe Operating Area
• High Voltage Capability
C
2
E
3
1
B
Application
TO-220
1
• Electronic Ballast
• Switch Mode Power Supplies
1.Base
2.Collector
3.Emitter
Ordering Information
Part Number
Marking
Package
Packing Method
FJP5555TU
J5555
TO-220
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
BVCBO
Collector-Base Voltage
1050
V
BVCEO
Collector-Emitter Voltage
400
V
BVEBO
Emitter-Base Voltage
14
V
IC
Collector Current (DC)
5
A
ICP
Collector Current (Pulse)
10
A
IB
Base Current (DC)
2
A
IBP
Base Current (Pulse)
4
A
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 to +150
°C
Value
Units
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Rθja(1)
Rθjc
(2)
Parameter
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
TA = 25°C
1.38
W
TC = 25°C
75
W
90
°C/W
1.66
°C/W
Notes:
1. Rθja test board and fixture under natural convection, JESD51-10 recommended thermal test board.
2. Rθjc test fixture under infinite cooling condition.
© 2008 Fairchild Semiconductor Corporation
Rev. 1.2.0
www.fairchildsemi.com
1
FJP5555 — NPN Silicon Transistor
June 2013
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Voltage
IC = 500 μA, IE = 0
1050
V
BVCEO
Collector-Emitter Voltage
IC = 5 mA, IB = 0
400
V
BVEBO
Emitter-Base Voltage
IE = 500 μA, IC = 0
14
V
VCE = 5 V, IC = 10 mA
10
VCE = 3 V, IC = 0.8 A
20
hFE
DC Current Gain
IC = 1 A, IB = 0.2 A
0.5
V
IC = 3.5 A, IB = 1.0 A
1.5
V
IC = 3.5 A, IB = 1.0 A
1.2
V
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Cob
Output Capacitance
VCB = 10 V, f = 1 MHz
tON
Turn-On Time
tSTG
Storage Time
VCC = 125 V, IC = 0.5 A,
IB1 = 45 mA, IB2 = 0.5 A,
RL = 250 Ω
tF
Fall Time
tON
Turn-On Time
tSTG
Storage Time
tF
EAS
Note:
40
Fall Time
VCC = 250 V, IC = 2.5 A,
IB1 = 0.5 A, IB2 = 1.0 A,
RL = 100 Ω
Avalanche Energy
L = 2 mH
45
6
pF
1.0
μs
1.2
μs
0.3
μs
2.0
μs
2.5
μs
0.3
μs
mJ
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
© 2008 Fairchild Semiconductor Corporation
Rev. 1.2.0
www.fairchildsemi.com
2
FJP5555 — NPN Silicon Transistor
Electrical Characteristics(3)
FJP5555 — NPN Silicon Transistor
Typical Performance Characteristics
5.0
100
o
Ta = 75 C
4.5
VCE = 5V
o
IC [A], COLLECTOR CURRENT
Ta = 125 C
4.0
hFE, DC CURRENT GAIN
IB = 600mA
3.5
3.0
IB = 200mA
2.5
2.0
IB = 100mA
1.5
1.0
o
Ta = 25 C
o
Ta = - 25 C
10
0.5
0.0
0
1
2
3
4
5
6
7
8
1
1E-3
9
0.01
VCE [V], COLLECTOR-EMITTER VOLTAGE
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristics
Figure 2. DC Current Gain
10
o
Ta = 125 C
o
Ta = 75 C
1
o
Ta = - 25 C
o
Ta = 25 C
0.1
0.01
0.01
0.1
1
IC = 5 IB
VBE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
10
IC = 5 IB
o
1
o
Ta = - 25 C
o
Ta = 125 C
o
Ta = 75 C
0.1
0.01
0.01
10
Ta = 25 C
0.1
1
Figure 3. Saturation Voltage
Figure 4. Saturation Voltage
tSTG & tF [us], SWITCHING TIME
tSTG & tF [us], SWITCHING TIME
1
tSTG
0.1
tF
VCC=125V
tSTG
1
tF
0.1
VCC=250V
IB1=45mA, IB2=0.5A
0.01
0.1
IB1=0.5A, IB2=1.0A
0.01
0.1
1
IC [A], COLLECTOR CURRENT
1
10
IC [A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching
© 2008 Fairchild Semiconductor Corporation
Rev. 1.2.0
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 6. Resistive Load Switching
www.fairchildsemi.com
3
100
PC[W], POWER DISSIPATION
IC [A], COLLECTOR CURRENT
90
10
VCC=50V, L=1mH
80
70
60
50
40
30
20
10
IB1=3A, RB2=0
0
1
10
100
0
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
25
50
75
100
125
150
175
o
Tc[ C], CASE TEMPERATURE
Figure 7. Reverse Biased Safe Operating Area
Figure 8. Power Derating
IC[A], COLLECTOR CURRENT
100
ICP(max)
10
100ms
10ms
DC
IC(max)
1
0.1
o
Tc=25 C
Single Pulse
0.01
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Forward Biased Safe Operating Area
© 2008 Fairchild Semiconductor Corporation
Rev. 1.2.0
www.fairchildsemi.com
4
FJP5555 — NPN Silicon Transistor
Typical Performance Characteristics (Continued)
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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