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High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
1
1.Base
Absolute Maximum Ratings
Symbol
TO-220F
2.Collector
3.Emitter
TC = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
8
A
ICP
Collector Current (Pulse)
16
A
IB
Base Current
4
A
PC
Collector Dissipation (TC = 25°C)
40
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
©2005 Fairchild Semiconductor Corporation
FJPF13007 Rev. C
1
www.fairchildsemi.com
FJPF13007 High Voltage Fast-Switching NPN Power Transistor
FJPF13007
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max
Units
1
µA
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA, IB = 0
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
400
V
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
1.0
2.0
3.0
V
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
1.2
1.6
V
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
Cob
Output Capacitance
VCB = 10V, f = 0.1MHz
tON
Turn On Time
tSTG
Storge Time
tF
Fall Time
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A
RL = 25Ω
8
5
60
30
4
MHz
110
pF
1.6
µs
3.0
µs
0.7
µs
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
hFE Classification
Classification
H1
H2
hFE1
15 ~ 28
26 ~ 39
2
FJPF13007 Rev. C
www.fairchildsemi.com
FJPF13007 High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
Figure 2. Saturation Voltage
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 1. DC Current Gain
100
hFE, DC CURRENT GAIN
VCE = 5V
10
1
0.1
1
10
10
I C = 3 IB
1
VBE(sat)
VCE(sat)
0.1
0.01
0.1
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
100
1000
tR, tD [ns], TURN ON TIME
Cob[pF], CAPACITANCE
10
Figure 4. Turn On Time
1000
100
10
tR
100
tD, VBE(off)=5V
VCC=125V
IC=5IB
1
0.1
1
10
100
10
0.1
1000
VCB[V], COLLECTOR-BASE VOLTAGE
1
10
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
Figure 6. Forward Biased Safe Operating Area
100
10000
tSTG
1000
100
tF
10
0.1
DC
1
0.1
0.01
1
1
10
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
3
FJPF13007 Rev. C
10
µs
10 µs
0
10
IC[A], COLLECTOR CURRENT
VCC=125V
IC=5IB
s
1m
tSTG, tF [ns], TURN OFF TIME
1
IC[A], COLLECTOR CURRENT
www.fairchildsemi.com
FJPF13007 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
(Continued)
Figure 7. Reverse Biased Safe Operating Area
Figure 8. Power Derating
60
Vcc=50V,
IB1=1A, IB2 = -1A
L = 1mH
50
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
100
10
1
0.1
0.01
10
100
1000
30
20
10
0
10000
0
VCE[V], COLLECTOR-EMITTER VOLTAGE
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
4
FJPF13007 Rev. C
40
www.fairchildsemi.com
FJPF13007 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
B
A
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.66
2.42
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
B
16.00
15.60
16.07
15.67
(3.23) B
1
2.14
3
1.47
1.24
2.96
2.56
0.90
0.70
10.05
9.45
0.50 M
A
30°
0.45
0.25
2.54
B
2.54
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
0.60
0.45
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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