FJPF1943RTU

FJP1943 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -17A. High Power Dissipation : 80watts. High Frequency : 30MHz. High Voltage : VCEO= -250V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to FJP5200 Full thermal and electrical Spice models are available. Same transistor is also available in: -- TO264 package, 2SA1943/FJL4215 : 150 watts -- TO3P package, 2SA1962/FJA4213 : 130 watts -- TO220F package, FJPF1943 : 50 watts Absolute Maximum Ratings* Symbol 1 TO-220 1.Base 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter Ratings Units BVCBO Collector-Base Voltage -250 V BVCEO Collector-Emitter Voltage -250 V BVEBO Emitter-Base Voltage -5 V IC Collector Current -17 A IB Base Current -1.5 A PD Total Device Dissipation(TC=25°C) Derate above 25°C 80 0.64 W W/°C TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol RθJC Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Ratings Units 1.25 °C/W * Device mounted on minimum pad size hFE Classification Classification R O hFE1 55 ~ 110 80 ~ 160 © 2009 Fairchild Semiconductor Corporation FJP1943 Rev. C www.fairchildsemi.com 1 FJP1943 — PNP Epitaxial Silicon Transistor January 2009 Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=-5mA, IE=0 -250 V BVCEO Collector-Emitter Breakdown Voltage IC=-10mA, RBE=∞ -250 V BVEBO Emitter-Base Breakdown Voltage IE=-5mA, IC=0 -5 V ICBO Collector Cut-off Current VCB=-230V, IE=0 -5.0 µA IEBO Emitter Cut-off Current VEB=-5V, IC=0 -5.0 µA hFE1 DC Current Gain VCE=-5V, IC=-1A 55 hFE2 DC Current Gain VCE=-5V, IC=-7A 35 VCE(sat) Collector-Emitter Saturation Voltage IC=-8A, IB=-0.8A -0.4 -3.0 V VBE(on) Base-Emitter On Voltage VCE=-5V, IC=-7A -1.0 -1.5 V fT Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz Cob Output Capacitance VCB=-10V, f=1MHz 360 pF 160 60 * Pulse Test: Pulse Widt=20µs, Duty Cycle≤2% Ordering Information Part Number Marking Package Packing Method FJP1943RTU J1943R TO-220 TUBE hFE1 R grade FJP1943OTU J1943O TO-220 TUBE hFE1 O grade © 2009 Fairchild Semiconductor Corporation FJP1943 Rev. C Remarks www.fairchildsemi.com 2 FJP1943 — PNP Epitaxial Silicon Transistor Electrical Characteristics* Ta=25°C unless otherwise noted -20 IB = -900mA IB = -800mA IB = -1A -16 -14 -12 IB = -300mA -10 IB = -200mA o Tj = 25 C -8 IB = -100mA -6 VCE = -5V o Tj = 125 C IB = -700mA IB = -600mA IB = -500mA A IB = -400m hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -18 -4 100 o Tj = -25 C 10 -2 -0 -2 -4 -6 -8 1 0.1 -10 1 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain ( R Grade ) 10000 hFE, DC CURRENT GAIN o Tj = 25 C Vce(sat)[mV], SATURATION VOLTAGE o Tj = 125 C VCE = -5V 100 o Tj = -25 C 10 1 0.1 1 10 Ic=-10Ib 1000 o o Tj=25 C Tj=125 C 100 o Tj=-25 C 10 0.1 1 IC[A], COLLECTOR CURRENT 10 Ic[A], COLLECTOR CURRENT Figure 3. DC current Gain ( O Grade ) Figure 4. Collector-Emitter Saturation Voltage 14 Ic=-10Ib o Tj=-25 C 12 IC[A], COLLECTOR CURRENT Vbe(sat)[mV], SATURATION VOLTAGE 10000 o Tj=25 C 1000 o Tj=125 C 100 0.1 8 6 4 2 0 0.0 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 10 V BE [V], BASE-EMITTER VOLTAGE Ic[A], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage © 2009 Fairchild Semiconductor Corporation FJP1943 Rev. C V CE = 5V 10 www.fairchildsemi.com 3 FJP1943 — PNP Epitaxial Silicon Transistor Typical Characteristics Transient Thermal Resistance, Rthjc[ C / W] 1.2 PC[W], POWER DISSIPATION o 100 80 60 40 20 0 0 25 50 75 100 125 150 175 0.8 0.6 0.4 0.2 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 Pulse duration [sec] o TC[ C], CASE TEMPERATURE Figure 7. Power Derating Figure 8. Thermal Resistance © 2009 Fairchild Semiconductor Corporation FJP1943 Rev. C 1.0 www.fairchildsemi.com 4 FJP1943 — PNP Epitaxial Silicon Transistor Typical Characteristics FJP1943 — PNP Epitaxial Silicon Transistor Mechanical Dimensions TO220 © 2009 Fairchild Semiconductor Corporation FJP1943 Rev. C www.fairchildsemi.com 5 FJP1943 PNP Epitaxial Silicon Transistor © 2009 Fairchild Semiconductor Corporation FJP1943 Rev. C www.fairchildsemi.com 6