FJPF5021OTU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FJPF5021 FJPF5021 High Voltage and High Reliability • High Speed Switching : tF = 0.1µs(Typ.) • Wide SOA TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V 500 V V CEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A 10 A ICP Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG 2 A 40 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 800 BVCEO BVEBO VCEX (sus) Typ. Max. Units V Collector-Emitter Sustaining Voltage IC = 5mA, IB = 0 500 Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V Collector-Emitter Sustaining Voltage IC = 2.5A, IB1 = -IB2 = 1A L = 1mH, Clamped 500 V V ICBO Collector Cut-off Current VCB = 500V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1 V VBE(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1.5 V 15 8 50 Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 80 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.6A 15 MHz tON Turn On Time tSTG Storage Time tF Fall Time VCC = 200V IC = 5IB1 = -2.5IB2 = 4A RL = 50Ω 0.1 0.5 µs 3 µs 0.3 µs hFE Classification Classification R O Y hFE1 15 ~ 30 20 ~ 40 30 ~ 50 ©2003 Fairchild Semiconductor Corporation Rev. A, May 2003 FJPF5021 Typical Characteristics 100 5 4 IB = 600mA VCE = 5V IB = 400mA IB = 1A hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 800mA IB = 1.2A IB = 200mA 3 IB = 100mA 2 IB = 50mA 1 10 IB = 20mA IB = 0 0 0 2 4 6 8 1 0.01 10 0.1 10 IC [A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 Figure 2. DC current Gain 10 10 IC = 5 IB tON, tSTG, tF [µs], TIME tSTG VBE(sat) 1 0.1 1 tF tON 0.1 VCE(sat) 0.01 0.01 0.1 1 0.01 0.1 10 1 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 100 6 VCE = 5V IC[A], COLLECTOR CURRENT 1 0 0.0 s 2 0µ 50 3 IC(max) s 1m 4 50µs ICP(max) 10 s m 10 IC[A], COLLECTOR CURRENT 5 DC 1 0.1 0.01 0.2 0.4 0.6 0.8 1.0 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2003 Fairchild Semiconductor Corporation 1.2 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Forward Bias Safe Operating Area Rev. A, May 2003 FJPF5021 Typical Characteristics (Continued) 60 Vcc=50V, IB1 =1A, IB2 = -1A L = 1mH 10 1 0.1 0.01 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Bias Safe Operating Area ©2003 Fairchild Semiconductor Corporation 50 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 100 40 30 20 10 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, May 2003 B A 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 SEE NOTE "F" SEE NOTE "F" 6.88 6.48 1 X 45° B 16.00 15.60 16.07 15.67 (3.23) B 1 2.14 3 1.47 1.24 2.96 2.56 0.90 0.70 10.05 9.45 0.50 M A 30° 0.45 0.25 2.54 B 2.54 B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. OPTION 1 - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5 0.60 0.45 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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