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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FJT44
NPN Epitaxial Silicon Transistor
Features
• High-Voltage Transistor
4
3
2
1
SOT-223
1. Base 2,4. Collector 3. Emitter
Ordering Information
Part Number
Marking
Package
Packing Method, Size
FJT44TF
FJT44
SOT-223 4L
Tape and Reel, 4000 pcs
FJT44KTF
FJT44
SOT-223 4L
Tape and Reel, 2500 pcs
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
6
V
300
mA
150
°C
-55 to +150
°C
IC
Collector Current
TJ
Junction Temperature
TSTG
Storage Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2002 Fairchild Semiconductor Corporation
FJT44 Rev. 1.1.0
www.fairchildsemi.com
FJT44 — NPN Epitaxial Silicon Transistor
October 2014
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Power Dissipation, TC = 25°C
Derate Above 25°C
Thermal Resistance, Junction-to-Ambient
Max.
Unit
2
W
16
mW/°C
62.5
°C/W
Note:
3. Device is mounted on FR-4 PCB 36 mm × 18 mm × 1.5 mm; mounting pad for the collector lead minimum 6 cm2.
Electrical Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
IC = 100 μA, IE = 0
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage IC = 1 mA, IB = 0
BVEBO
Min.
Typ.
Max.
Unit
500
V
400
V
Emitter-Base Breakdown Voltage
IE = 100 μA, IC = 0
ICBO
Collector-Base Cut-Off Current
VCB = 400 V, IE = 0
100
nA
ICES
Collector-Emitter Cut-Off Current
VCE = 400 V, VBE = 0
500
nA
IEBO
Emitter-Base Cut-Off Current
100
nA
hFE
VCE(sat)
VBE(sat)
Cobo
DC Current Gain
Collector-Emitter Saturation Voltage
6
VEB = 4 V, IC = 0
VCE = 10 V, IC = 1 mA
40
VCE = 10 V, IC = 10 mA
50
VCE = 10 V, IC = 50 mA
45
VCE = 10 V, IC = 100 mA
40
V
200
IC = 1 mA, IB = 0.1 mA
0.40
IC = 10 mA, IB = 1 mA
0.50
IC = 50 mA, IB = 5 mA
0.75
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1 mA
0.75
V
Output Capacitance
VCB = 20 V, IE = 0,
f = 1.0 MHz
7
pF
V
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
© 2002 Fairchild Semiconductor Corporation
FJT44 Rev. 1.1.0
www.fairchildsemi.com
2
FJT44 — NPN Epitaxial Silicon Transistor
Thermal Characteristics(3)
160
10
VCE=10V
VCC=150V
IC/IB=10
140
o
TA=25 C
VBE(off)=4V
100
80
t[us], TIME
hFE, DC CURRENT GAIN
120
60
40
1
20
tf
0
td
-20
0.1
-40
1
10
100
1000
1
10000
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Turn-On Switching Times
100
1000
VCC=150V
IC/IB=10
o
TA=25 C
f=1MHz
o
Cib[pF],Cob[pF], CAPACITANCE
TA=25 C
t[us], TIME
10
ts
1
tf
0.1
1
10
100
Cib
Cob
10
1
0.1
100
IC[mA], COLLECTOR CURRENT
VCE[V] COLLECTOR EMITTER VOLTAGE
VBE(sat) @IC/IB=10
[V], VOLTAGE
1000
0.5
o
0.8
0.6
VBE(on) @VCE=10V
0.4
0.0
0.1
100
Figure 4. Capacitance
TA=25 C
0.2
10
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Turn-Off Switching Times
1.0
1
VCE(sat)@IC/IB=10
o
IC=10mA
IC=1mA
IC=50mA
TA=25 C
0.4
0.3
0.2
0.1
0.0
1
10
100
1000
10
IC[mA], COLLECTOR CURRENT
1000
10000
100000
IC[mA], COLLECTOR CURRENT
Figure 5. On Voltage
© 2002 Fairchild Semiconductor Corporation
FJT44 Rev. 1.1.0
100
Figure 6. Collector Saturation Region
www.fairchildsemi.com
3
FJT44 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
FJT44 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics (Continued)
hFE, SMALL SIGNAL CURRENT GAIN
100
VCE=10V
f=10MHz
o
TA=25 C
10
1
0.1
0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 7. High Frequency Current Gain
© 2002 Fairchild Semiconductor Corporation
FJT44 Rev. 1.1.0
www.fairchildsemi.com
4
6.70
6.20
0.10
B
C B
3.10
2.90
3.25
4
1.90
A
3.70
3.30
1
6.10
1.90
3
0.84
0.60
2.30
2.30
0.95
4.60
0.10
C B
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.80 MAX
C
0.08
C
0.10
0.00
10°
5°
GAGE
PLANE
R0.15±0.05
R0.15±0.05
10° TYP
0°
0.25
SEATING
PLANE
10°
5°
0.60 MIN
1.70
DETAIL A
SCALE: 2:1
0.35
0.20
7.30
6.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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