FJV3106RMTF

FJV3106R FJV3106R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to FJV4106R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking R26 Equivalent Circuit C R1 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 50 Units V VCEO VEBO Collector-Emitter Voltage 50 V Emitter-Base Voltage 10 IC V Collector Current 100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=10µA, IE=0 BVCEO Collector-Emitter Breakdown Voltage IC=100µA, IB=0 ICBO Collector Cut-off Current VCB=40V, IE=0 hFE DC Current Gain VCE=5V, IC=5mA VCE(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA Cob Output Capacitance VCE=10mA, IE=0 f=1.0MHz Min. 50 Max. Units V 0.1 µA 50 V 68 0.3 fT Current Gain Bandwidth Product VCB=10V, IC=5mA VI(off) Input Off Voltage VCE=5V, IC=100µA VI(on) Input On Voltage VCE=0.3V, IC=1mA R1 Input Resistor 7 R1/R2 Resistor Ratio 0.19 ©2002 Fairchild Semiconductor Corporation Typ. V 3.7 pF 250 MHz 0.3 V 1.4 V 10 13 KΩ 0.21 0.24 Rev. A, July 2002 FJV3106R Typical Characteristics 100 1000 VCE =0.3V R1 = 10K R2 = 47K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN VCE = 5V R1 = 10K R2 = 47K 100 10 1 0.1 1 10 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Input On Voltage 400 VCE = 5V R1 = 10K R2 = 47K 350 PC[mW], POWER DISSIPATION IC [µA], COLLECTOR CURRENT 1 0.1 0.1 100 10k 1k 100 10 1 0.0 10 300 250 200 150 100 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VI(off)[V], INPUT OFF VOLTAGE Figure 3. Input Off Voltage ©2002 Fairchild Semiconductor Corporation 1.8 2.0 0 25 50 75 100 125 150 175 o T a[ C], AMBIENT TEMPERATURE Figure 4. Power Derating Rev. A, July 2002 FJV3106R Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FASTâ CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I1