FJY3013R
tm
NPN Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=2.2KΩ, R2=47KΩ)
• Complement to FJY4013R
Equivalent Circuit
C
C
S13
E
B
E
B
SOT - 523F
Absolute Maximum Ratings *
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current
100
mA
TSTG
Storage Temperature Range
-55~150
°C
TJ
Junction Temperature
150
°C
PC
Collector Power Dissipation, by RθJA
200
mW
Max
Units
600
°C/W
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient
* Minimum land pad size.
Electrical Characteristics*
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Condition
MIN
Typ
MAX
Units
V(BR)CBO
Collector-Emitter Breakdown Voltage
IC = 10 uA, IE = 0
50
V
V(BR)CEO
Collector-Base Breakdown Voltage
IC = 100 uA, IB = 0
50
V
ICBO
Collector-Cutoff Current
VCB = 40 V, IE = 0
hFE
DC Current Gain
VCE = 5 V, IC = 5 mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 0.5 mA
fT
Current Gain - Bandwidth Product
VCE = 10V, IC = 5 mA
Ccb
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
VI(off)
Input Off Voltage
VCE = 5 V, IC = 100uA
VI(on)
Input On Voltage
VCE = 0.2V, IC = 5mA
1.1
V
R1
Input Resistor
1.5
2.2
2.9
KΩ
R1/R2
Resistor Ratio
0.042
0.047
0.052
0.1
uA
56
0.3
V
250
MHz
3.7
pF
0.5
V
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
FJY3013R Rev. B
1
www.fairchildsemi.com
FJY3013R NPN Epitaxial Silicon Transistor
July 2007
Figure 1. DC current Gain
Figure 2. Input On Voltage
10
1000
VCE =0.3V
R1 = 2.2K
R2 = 47K
VI(on)[V], INPUT VOLTAGE
hFE, DC CURRENT GAIN
VCE = 5V
R1 = 2.2K
R2 = 47K
100
0.1
0.1
10
1
10
100
1
1000
1
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
100
Figure 4. Power Derating
1000
280
IC = 10IB
R1 = 2.2K
R2 = 47K
240
PC[mW], POWER DISSIPATION
VCE(sat)[mV], SATURATION VOLTAGE
10
IC[mA], COLLECTOR CURRENT
100
10
200
160
120
80
40
0
1
1
10
0
100
50
75
100
125
150
175
Ta[ C], AMBIENT TEMPERATURE
2
FJY3013R Rev. B
25
o
IC[mA], COLLECTOR CURRENT
www.fairchildsemi.com
FJY3013R NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
FJY3013R NPN Epitaxial Silicon Transistor
Package Dimensions
SOT-523F
Dimensions in Millimeters
3
FJY3013R Rev. B
www.fairchildsemi.com
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HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I25
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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