FJZ733OTF

FJZ733 FJZ733 Low Frequency Amplifier • Collector-Base Voltage : VCBO= -60V • Complement to FJZ945 3 2 1 SOT-623F 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -60 Units V V VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA PC Collector Power Dissipation 100 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min. -60 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA. IB=0 -50 BVEBO Emitter-Base Breakdown Voltage IE = -10µA. IC=0 -5 V ICBO Collector Cut-off Current VCB= --60V, IE=0 IEBO Emitter Cut-off Current VEB= -5V, IC=0 hFE DC Current Gain VCE= -6V, IC= -1mA VCE (sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.18 -0.3 V VBE (on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.50 -0.62 -0.80 V fT Current Gain Bandwidth Product VCE= -6V, IC= -10mA 50 180 Cob Output Capacitance VCB= -10V, IE = 0, f=1MHz 2.8 pF NF Noise Figure VCE= -6V, IC= -0.3mA f=1MHz, Rs=10kΩ 6.0 dB V 40 -100 nA -100 nA 700 MHz Thermal Characteristics TC=25°C unless otherwise noted Symbol RθJA Parameter Thermal Resistance, Junction to Ambient Max. 1250 Units °C/W hFE Classification & Marking Classification R O Y G L hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 Marking A2 A3 A1 A4 A5 Marking A1 ©2003 Fairchild Semiconductor Corporation Rev. B1, July 2003 FJZ733 Typical Characteristics -50 IB = -350µ A -35 0 IB = -300µ A -30 IB = -250µ A -25 IB = -150µ A -15 IB = -100µ A -10 Ta=25 C 0 Ta=-25 C 100 IB = -200µ A -20 IB = -50µ A -5 0 VCE=-6V 0 Ta=125 C IB = -400µ A -40 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -45 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 10 -20 -1 VCE[V], COLLECTOR-EMITTER VOLTAGE -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC Current Gain -1 VCE(sat)[V], SATURATION VOLTAGE VBE(SAT)[V], SATURATION VOLTAGE IC=10IB 0 Ta=-25 C 0 Ta=25 C 0 Ta=125 C -0.1 -1E-3 -0.01 -0.1 0 Ta=125 C 0 -0.1 0 Figure 3. Base-Emitter Saturation Voltage -0.1 Cob [pF], CAPACITANCE IE = 0 f = 1MHz -80 -60 0 125 C 0 0 25 C -25 C -40 -20 10 1 -0.2 -0.4 -0.6 -0.8 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2003 Fairchild Semiconductor Corporation -1 Figure 4. Collector-Emitter Saturation Voltage VCE=-6V -100 IC[mA], COLLECTOR CURRENT -0.01 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT -0 -0.0 Ta=25 C Ta=-25 C -0.01 -1E-3 -1 IC=10IB -1 -1.0 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 6. Collector Output Capacitance Rev. B1, July 2003 FJZ733 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Typical Characteristics (Continued) 1000 VCE = -6V 100 10 -1 -10 IC[mA], COLLECTOR CURRENT Figure 7. Current Gain Bandwidth Product ©2003 Fairchild Semiconductor Corporation Rev. B1, July 2003 FJZ733 Package Dimensions SOT-623F Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. B1, July 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I3