FKN08PN60
tm
TRIAC (Silicon Bidirectional Thyristor)
Application Explanation
•
•
•
•
Switching mode power supply, light dimmer, electric flasher unit, hair drier
TV sets, stereo, refrigerator, washing machine
Electric blanket, solenoid driver, small motor control
Photo copier, electric tool
3
2
1: T1
2: Gate
3: T2
1
TO-92
1 2 3
Absolute Maximum Ratings
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Rating
Units
600
V
0.8
A
50Hz
8
A
60Hz
9
A
0.33
A 2s
5
W
0.1
W
Peak Gate Voltage
5
V
IGM
Peak Gate Current
1
A
TJ
Junction Temperature
- 40 ~ 125
qC
TSTG
Storage Temperature
- 40 ~ 125
qC
Value
Units
40
qC/W
160
qC/W
VDRM
VRRM
Peak Repetitive Off-State Voltage
IT (RMS)
RMS On-State Current
Commercial frequency, sine full wave
360q conduction, Tc= 70ଇ
ITSM
Surge On-State Current
Sinewave 1 full cycle, peak value,
non-repetitive
I2 t
I2t
PGM
Peak Gate Power Dissipation
PG (AV)
Average Gate Power Dissipation
VGM
for Fusing
Sine Wave 50 to 60Hz, Gate Open
Value corresponding to 1 cycle of halfwave,
surge on-state current, tp=8.4ms
Thermal Characteristics
Symbol
RTJC
RTJA
Parameter
Thermal Resistance, Junction to Case
(note1)
Thermal Resistance, Junction to Ambient
(note2)
Note1: Infinite cooling condition.
Note2: JESD51-10 ( Test Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad)
©2006 Fairchild Semiconductor Corporation
FKN08PN60 Rev. A
1
www.fairchildsemi.com
FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
August 2006
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Condition
Min.
Typ.
Max.
Units
IDRM
IRRM
Repetieive Peak Off-State Current
VDRM/VRRM applied
-
-
100
PA
VTM
On-State Voltage
TC=25qC, ITM=1.12A
Instantaneous measurement
-
-
1.8
V
T2(+), Gate (+)
-
-
2.0
V
VGT
Gate Trigger Voltage
T2(+), Gate (-)
-
-
2.0
V
T2(-), Gate (-)
-
-
2.0
V
T2(+), Gate (+)
-
-
5
mA
T2(+), Gate (-)
-
-
5
mA
T2(-), Gate (-)
-
-
5
mA
I
II
VD=12V, RL=100:
III
I
Gate Trigger Current
IGT
II
VD=12V, RL=100:
III
VGD
Gate Non-Trigger Voltage
IH
Holding Current
IL
Latching Current
(I, II,III)
I, III
TJ=125qC, VD=1/2VDRM
0.2
-
-
V
VD = 12V, ITM = 200mA
-
-
15
mA
VD = 12V, IG = 10mA
-
-
15
mA
-
-
20
mA
20
-
-
V/Ps
3.0
-
-
V/Ps
II
dv/dt(s)
Critical Rate of Rise of
Off-State Voltag
VDRM = 63% Rated, Tj = 125qC,
Exponential Rise
dv/dt(c)
Critical-Rate of Rise of Off-State Commutating Voltage (di/dt=-0.7A/uS)
Commutation dv/dt test
VDRM
(V)
FKN08PN60
Commutating voltage and current waveforms
(inductive load)
Test Condition
1. Junction Temperature
TJ=125qC
2. Rate of decay of on-state
commutating current (di/dt)C
3. Peak off-state voltage
VD = 300V
Supply Voltage
(di/dt)C
Main Current
Time
Time
Main Voltage
(dv/dt)C
2
FKN08PN60 Rev. A
Time
VD
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FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Electrical Characteristics
FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Quadrant Definitions for a Triac
T2 Positive
+
(+) T2
Quadrant II
(+) T2
(-) IGT
GATE
Quadrant I
(+) IGT
GATE
T1
T1
IGT -
+ IGT
(-) T2
Quadrant III
(-) T2
(-) IGT
GATE
(+) IGT
GATE
T1
Quadrant IV
T1
T2 Negative
Package Marking and Ordering Information
Device Marking
Device
Package
Packing
Tape Width
Quantity
K08PN60
FKN08PN60
TO-92
Bulk
--
--
3
FKN08PN60 Rev. A
www.fairchildsemi.com
Figure 2. Power Dissipation
PAV[W], Maximum Average Power Dissipation
ITM[A], On-State Current
Figure 1. On-State Characteristics
o
TJ=125 C
o
TJ=25 C
1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VTM[V], On-State Voltage
DC
o
180 C
0.8
o
120 C
0.6
o
90 C
0.4
o
60 C
o
30 C
0.2
0.0
0.0
0.2
0.4
0.6
0.8
1.0
ITRMS[A], On-State Current
6
o
120
IGT[mA], Gate Trigger Current
30 C
o
60 C
110
o
90 C
100
o
120 C
o
180 C
90
DC
80
70
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
5
4
Q3
3
Q2
2
Q1
1
0
-40
1.0
80
120
Figure6. Typical Latching Currrent
vs Junction Temperature
VGT[mA], Gate Trigger Voltage
6
0.9
0.8
0.7
Q3
Q1
0.6
Q2
0.5
0
40
80
4
Q3
2
Q1
0
-40
120
0
40
80
120
o
o
TJ[ C], Junction Temperature
TJ[ C], Junction Temperature
4
FKN08PN60 Rev. A
40
o
1.0
0.4
-40
0
TJ[ C], Junction Temperature
ITRMS[A], On-State Current
Figure5. Typical Gate Voltage
vs Junction Temperarure
VGT[mA], Gate Trigger Voltage
1.0
Figure 4. Typical Gate Trigger Current
vs Junction Temperature
o
Maximum Allowable Case Temperature, TC[ C]
Figure 3. RMS Current Rating
1.2
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FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Typical Performance Characteristics
Figure7. Typical Holding Current
vs Junction Temperature
Figure8. Junction to Case Thermal Resistance
50
IH[mA],Holding Current
o
Junction to Case Thermal Resistance, [ C/W]
5
4
3
Q3
2
Q1
1
0
-40
Q2
0
40
80
120
o
TJ[ C], Junction Temperature
30
20
10
0
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Time, [S]
5
FKN08PN60 Rev. A
40
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FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Typical Performance Characteristics (Continued)
FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Package Dimension
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
(0.25)
+0.10
0.38 –0.05
0.38 –0.05
±0.20
3.86MAX
3.60
1.02 ±0.10
+0.10
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
(R2.29)
6
FKN08PN60 Rev. A
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intended for surgical implant into the body, or (b) support or sustain life, or
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instructions for use provided in the labeling, can be reasonably expected
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
7
FKN08PN60 Rev. A
www.fairchildsemi.com
FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
TRADEMARKS
