FMBM5551-SB16001

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Other names and brands may be claimed as the property of others. FMBM5551 — NPN General-Purpose Amplifier FMBM5551 NPN General-Purpose Amplifier Features • This device has matched dies • Sourced from process 16 • See MMBT5551 for characteristics C2 E1 C2 B2 E1 E2 C1 B1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .3S2 Dot denotes pin #1 Figure 1. Device Package Figure 2. Internal Connection Ordering Information Part Number Top Mark Package Packing Method FMBM5551 3S2 SSOT 6L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 600 mA TJ Junction Temperature 150 °C -55 to 150 °C TSTG Storage Temperature Range © 2005 Semiconductor Components Industries, LLC. October-2017,Rev. 2 Publication Order Number: FMBM5551/D Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Power Dissipation (TC = 25°C) 0.7 W Derate Above 25°C 5.6 mW/°C Thermal Resistance, Junction-to-Ambient 180 °C/W Notes: 1. PD total, for both transistors. For each transistor, PD = 350 mW. 2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. 160 Unit BVCEO Collector-Emitter Breakdown Voltage IC = 1 mA, IB = 0 V BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 180 V BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6 V VCB = 120 V, IE = 0 50 nA VCB = 120 V, IE = 0, TA = 100°C 50 μA VEB = 4 V, IC = 0 50 nA ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE1 DC Current Gain VCE = 5 V, IC = 1 mA 80 Variation Ratio of hFE1 Between Die 1 and Die 2 hFE1(Die1) / hFE1(Die2) 0.9 1.1 DC Current Gain VCE = 5 V, IC = 10 mA 80 250 Variation Ratio of hFE2 Between Die 1 and Die 2 hFE2(Die1) / hFE2(Die2) 0.95 1.05 DC Current Gain VCE = 5 V, IC = 50 mA 30 DIVID3 Variation Ratio of hFE3 Between Die 1 and Die 2 hFE3(Die1) / hFE3(Die2) 0.9 VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(on) DIVID1 hFE2 DIVID2 hFE3 1.1 IC = 10 mA, IB = 1 mA 0.15 IC = 50 mA, IB = 5 mA 0.20 V IC = 10 mA, IB = 1 mA 1 IC = 50 mA, IB = 5 mA 1 Base-Emitter On Voltage VCE = 5 V, IC = 10 mA 1 V DEL Difference of VBE(on) Between Die1 and Die 2 VBE(on)(Die1) - VBE(on)(Die2) 8 mV Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 6 pF Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 20 pF fT Current Gain Bandwidth Product VCE = 10 V, IC = 10 mA, f = 100 MHz 300 MHz NF Noise Figure VCE = 5 V, IC = 200 μA, f = 1 MHz, RS = 20 kΩ, B = 200 Hz 8 dB hfe Small Signal Current Gain VCE = 10 V, IC = 1.0 mA, f = 10 kHz www.onsemi.com 2 -8 100 50 250 V FMBM5551 — NPN General-Purpose Amplifier Thermal Characteristics(1), (2) 125 °C 200 25 °C - 40 °C V C E = 5V 0.2 β = 10 0.3 β 100 0 0.1 Voltage vs Collector Current 0.5 β0.4 150 50 VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN vs Collector Current 250 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 Figure 3. Typical Pulsed Current Gain vs. Collector Current β 25 °C ββ 0.2 125 °C 0.1 0 - 40 °C 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current β vs Collector Current Voltage 1 β = 10 β 0.8 β - 40 °C 25 °C β 0.6 125 °C 0.4 0.2 0 1 10 100 I - COLLECTOR CURRE NT (mA) 200 V BEON - BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) β Collector Current 1 0.8 - 40 °C 10 1 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( ° C) Figure 7. Collector Cut-Off Current vs. Ambient Temperature 125 VCE = 5V 0.2 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 200 Figure 6. Base-Emitter On Voltage vs. Collector Current BV CER - BREAKDOWN VOLTAGE (V) I CBO- COLLE CTOR CURRENT (nA) VCB = 100V 125 °C 0.4 Figure 5. Base-Emitter Saturation Voltage vs. Collector Current 50 25 °C 0.6 Between Emitter-Base 260 I C = 1.0 mA 240 220 Ω 200 180 Ω Ω 160 0.1 1 Ω 10 Ω RESISTANCE (kΩ ) 100 1000 Figure 8. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base www.onsemi.com 3 FMBM5551 — NPN General-Purpose Amplifier Typical Performance Characteristics f = 1.0 MHz CAPACITANCE (pF) 25 20 15 C ib 10 5 0 0.1 C cb 1 10 100 h FE - SMALL SIGNAL CURRENT GAIN 30 vs Collector Current 16 FREG = 20 MHz V CE = 10V 12 8 4 0 V CE - COLLECTOR VOLTAGE (V) Figure 9. Input and Output Capacitance vs. Reverse Voltage 1 10 I C - COLLECTOR CURRENT (mA) Figure 10. Small Signal Current Gain vs. Collector Current www.onsemi.com 4 50 FMBM5551 — NPN General-Purpose Amplifier Typical Performance Characteristics (Continued) FMBM5551 — NPN General-Purpose Amplifier Physical Dimensions Figure 11. 6-LEAD, SUPERSOT6, JEDEC MO-193, 1.6 MM WIDE www.onsemi.com 5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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