FMG1G75US60L

FMG1G75US60L Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • UL Certified No. E209204 Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 75A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 7PM-GA E1/C2 Application • • • • • E2 C1 AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Curent Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M5 @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute FMG1G75US60L 600 ± 20 75 150 75 150 10 310 -40 to +150 -40 to +125 2500 2.0 2.0 Units V V A A A A us W °C °C V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2002 Fairchild Semiconductor Corporation FMG1G75US60L Rev. A FMG1G75US60L IGBT Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA VGE = 0V, IC = 75mA 5.0 6.0 8.5 V IC = 75A, VGE = 15V -- 2.2 2.8 V VCE = 30V, VGE = 0V, f = 1MHz ---- 7056 672 180 ---- pF pF pF --------------- 20 40 70 110 1.4 1.7 3.1 20 50 80 250 1.6 3.0 4.6 ---200 ----------- ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ VCC = 300 V, VGE = 15V 100°C 10 -- -- us VCE = 300 V, IC = 75A, VGE = 15V ---- 310 62 130 350 --- nC nC nC Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ©2002 Fairchild Semiconductor Corporation VCC = 300 V, IC = 75A, RG = 3.3Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 300 V, IC = 75A, RG = 3.3Ω, VGE = 15V Inductive Load, TC = 125°C @ TC = FMG1G75US60L Rev. A FMG1G75US60L Electrical Characteristics of IGBT T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 75A TC = 100°C IF = 75A di / dt = 150 A/us Min. -- Typ. 1.9 Max. 2.8 -- 1.8 -- TC = 25°C -- 90 130 TC = 100°C -- 130 -- TC = 25°C -- 7 9 TC = 100°C -- 10 -- TC = 25°C -- 315 590 TC = 100°C -- 650 -- Units V ns A nC Thermal Characteristics Symbol RθJC RθJC RθCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module ©2002 Fairchild Semiconductor Corporation Typ. --0.05 -- Max. 0.4 0.9 -190 Units °C/W °C/W °C/W g FMG1G75US60L Rev. A FMG1G75US60L Electrical Characteristics of DIODE T 200 Common Emitter TC = 25℃ 180 20V 15V Common Emitter V GE = 15V T C = 25℃ T C = 125℃ 12V Collector Current, I C [A] 160 Collector Current, I C [A] FMG1G75US60L 200 140 120 Vge = 10V 100 80 60 40 160 120 80 40 20 0 0 0 2 4 6 8 0.3 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics 100 20 V CC = 300V Load Current : peak of square wave Common Emitter V GE = 15V 4 80 Load Current [A] 150A 3 75A 2 IC = 40A 1 60 40 20 0 Duty cycle : 50% Tc = 100℃ Power Dissipation = 100W 0 0 30 60 90 120 150 0.1 1 10 Case Temperature, Tc [℃] 100 1000 Frequency [Khz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC = 125℃ Collector - Emitter Voltage, V CE [V] Common Emitter TC = 25℃ Collector - Emitter Voltage, V CE [V] 10 Fig 2. Typical Saturation Voltage Characteristics 5 Collector - Emitter Voltage, V CE [V] 1 Collector - Emitter Voltage, V CE [V] 16 12 8 150A 4 75A Ic = 40A 0 16 12 8 150A 75A 4 Ic = 40A 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE FMG1G75US60L Rev. A Common Emitter V GE = 0V, f = 1MHz T C = 25℃ 14000 Common Emitter VCC = 300V, VGE = +/- 15V IC = 75A 0 TC = 25 C TC = 125 C Cies Switching Time [ns] Capacitance [pF] Ton 0 12000 10000 8000 6000 Coes 4000 Tr 100 Cres 2000 10 0 1 1 10 10 Gate Resistance, RG [Ω ] Collector - Emitter Voltage, V CE [V] Fig 8. Turn-On Characteristics vs. Gate Resistance Fig 7. Capacitance Characteristics Common Emitter VCC = 300V, VGE = +/- 15V IC = 75A Common Emitter VCC = 300V, VGE = +/- 15V IC = 75A 0 10000 TC = 25 C 0 TC = 25 C 0 0 TC = 125 C TC = 125 C Toff Tf Eon Switching Loss [uJ] Switching Time [ns] 1000 Eoff 100 1000 1 10 1 10 Gate Resistance, Rg [Ω ] Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance Common Emitter VCC = 300V, VGE = +/- 15V RG = 3.3Ω Common Emitter VCC = 300V, VGE = +/- 15V RG = 3.3Ω 0 0 TC = 25 C Ton 100 Tr Switching Time [ns] Switching Time [ns] TC = 25 C 1000 0 TC = 125 C 0 TC = 125 C Toff Tf Toff Tf 100 10 20 40 60 80 100 120 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation 140 20 40 60 80 100 120 140 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current FMG1G75US60L Rev. A FMG1G75US60L 1000 16000 FMG1G75US60L 15 Gate - Emitter Voltage, V GE [ V ] Common Emitter VCC = 300V, VGE = +/- 15V RG = 3.3Ω 0 TC = 25 C Switching Loss [uJ] 10000 0 TC = 125 C Eoff Eon Eoff 1000 Eon Common Emitter RL = 4 Ω T C = 25℃ 12 300 V 9 200 V VCC = 100 V 6 3 0 100 20 40 60 80 100 120 0 140 50 100 Collector Current, IC [A] 150 200 250 300 350 Gate Charge, Qg [ nC ] Fig 14. Gate Charge Characteristics Fig 13. Switching Loss vs. Collector Current 500 IC MAX. (Pulsed) IC MAX. (Continuous) 100 50us 100us Collector Current, I C [A] Collector Current, I C [A] 100 1㎳ 10 DC Operation Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linerarly with increase in temperature 1 0.1 10 Safe Operating Area o V GE = 20V, TC = 100 C 1 0.3 1 10 100 1000 1 10 100 1000 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 500 Thermal Response, Zthjc [℃/W] 1 Collector Current, I C [A] 100 10 1 0.1 Single Nonrepetitive Pulse TJ ≤ 125℃ V GE = 15V RG = 3.3 Ω 0 100 200 300 400 500 Collector-Emitter Voltage, VCE [V] Fig 17. RBSOA Characteristics ©2002 Fairchild Semiconductor Corporation 600 700 0.1 0.01 T C = 25℃ IGBT : DIODE : 1E-3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 18. Transient Thermal Impedance FMG1G75US60L Rev. A Peak Reverse Recovery Current I rr [A] Reverse Recovery Time Trr [x10ns] Common Cathode VGE = 0V TC = 25℃ TC = 125℃ 160 Forward Current, I F [A] FMG1G75US60L 20 200 120 80 40 0 0 1 2 Forward Voltage, V F [V] Fig 19. Forward Characteristics ©2002 Fairchild Semiconductor Corporation 3 4 T rr 10 Irr 5 Common Cathode di/dt = 150A/㎲ T C = 25℃ T C = 100℃ 2 0 10 20 30 40 50 60 70 80 Forward Current, IF [A] Fig 20. Reverse Recovery Characteristics FMG1G75US60L Rev. A FMG1G75US60L Package Dimension 7PM-GA Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation FMG1G75US60L Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST â FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC â OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench â QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER â UHC™ SMART START™ UltraFET â SPM™ VCX™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5