FMG2G200US60

FMG2G200US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short-circuit ruggedness is required. Features • • • • • • Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 200A High Input Impedance Fast & Soft Anti-Parallel FWD UL Certified No.E209204 Package Code : 7PM-HA E1/C2 Application • • • • • AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS C1 E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted VCES VGES IC ICM (1) IF IFM PD TSC TJ Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Short Circuit Withstand Time Operating Junction Temperature TSTG Storage Temperature Range VISO Isolation Voltage Power Terminal Screw : M5 Mounting Screw : M6 Mounting Torque @ TC = 80°C @ TC = 80°C @ TC = 25°C @ TC = 100°C @ AC 1minute FMG2G200US60 600 ± 20 200 400 200 400 695 10 -40 to +150 Units V V A A A A W us °C -40 to +125 °C 2500 4.0 4.0 V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2003 Fairchild Semiconductor Corporation FMG2G200US60 Rev. A FMG2G200US60 IGBT Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA 5.0 -- 6.5 2.1 8.5 2.7 V V ------------- 80 120 130 130 2.7 6.0 200 130 170 240 4.4 10.5 ---250 --------- ns ns ns ns mJ mJ ns ns ns ns mJ mJ VCC = 300 V, VGE = 15V 100°C 10 -- -- us VCE = 300 V, IC =200A, VGE = 15V ---- 625 150 215 ---- nC nC nC Min. -- Typ. 1.9 Max. 2.8 Units -- 1.8 -- Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC = 200mA, VCE = VGE IC = 200A, VGE = 15V Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 300 V, IC = 200A, RG = 2Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 200A, RG = 2Ω, VGE = 15V, Inductive Load, TC = 125°C @ TC = Electrical Characteristics of DIODE Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 200A TC = 100°C IF = 200A di / dt = 400 A/us TC = 25°C -- 90 130 TC = 100°C -- 130 -- TC = 25°C -- 19 25 TC = 100°C -- 25 -- TC = 25°C -- 855 1600 TC = 100°C -- 1625 -- V ns A nC Thermal Characteristics Symbol RθJC RθJC RθJC Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module ©2003 Fairchild Semiconductor Corporation Typ. --0.04 240 Max. 0.18 0.37 --- Units °C/W °C/W °C/W g FMG2G200US60 Rev. A FMG2G200US60 Electrical Characteristics of IGBT Common Emitter T C = 25℃ E G 0 5 2 0 0 2 0 5 1 0 0 1 0 0 1 0 5 0 0 4 Fig 2. Typical Saturation Voltage Characteristics 0 . 4 0 0 3 E C 0 . 3 V 0 1 = V 0 5 2 5 . 2 A 0 0 2 E G 0 0 2 A 0 0 1 0 . 2 0 5 1 0 0 1 5 . 1 0 5 0 . 1 0 V , e g a t l o V r e t t i m E r o t c e l l o C Common Emitter VGE = 15V A 0 0 4 ] V [ 5 . 3 V V 2 5 1 1 V 0 2 0 5 3 Common Emitter TC = 125℃ 5 2 1 0 0 1 C E C TC , e r u t 5 a 7 r e p m e T e 0 s 5 a 5 2 4 ] V [ 3V , e g a t l o V r 2e t t i m E r o 1t c e l l o C 0 [℃] Fig 3. Typical Saturation Voltage Characteristics Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level n o T r T f T ] s n [ e m i T g n i h c t i w S Common Emitter VCC = 300V, VGE = ± 15V IC = 200A TC = 25℃ ━━ TC = 125℃ ------ f f o T Common Emitter VCC = 300V, VGE = ± 15V IC = 200A TC = 25℃ ━━ TC = 125℃ ------ 0 0 0 1 0 0 0 1 ] s n [ e m i T g n i h c t i w S ] V [ E E 3 VC , e g a t l o V r 2e t t i m E r o 1t c e l l o C 0 ] 0V 1[ VC , e g a t l o V r e t t i m E r 1o t c e l l o C 0 0 4 ] A [ IC , t n e r r u C r o t c e l l o C V 0 1 = V 0 0 3 0 0 2 Fig 1. Typical Output Characteristics 0 0 1 0 0 1 0 3 5 2 0 2 5 1 ] [ g R , e c n a t s i s e R a G 0 e 1 t 5 ©2003 Fairchild Semiconductor Corporation 0 3 Fig 5. Turn-On Characteristics vs. Gate Resistance 5 2 ] 0[ 2g R , e c 5n 1a t s i s e t a G 0R 1e 5 Ω Ω Fig 6. Turn-Off Characteristics vs. Gate Resistance FMG2G200US60 Rev. A FMG2G200US60 0 5 3 0 0 3 ] A [ IC , t n e r r u C r o t c e l l o C V 0 2 V 5 V 1 2 1 0 0 4 0 0 4 ] A [ IC , t n e r r u C r o t c e l l o C Common Emitter VGE = 15V TC = 25℃ TC = 125℃ FMG2G200US60 ] s n [ e m i T g n i h c t i w S Common Emitter VGE = ± 15V, RG = 2Ω TC = 25℃ ━━ TC = 125℃ ------ n o T f f o E n o E 0 1 r T 0 0 1 ] J m [ s s o L g n i h c t i w S 0 0 0 1 Common Emitter VCC = 300V, VGE = ± 15V IC = 200A TC = 25℃ ━━ TC = 125℃ ------ 1 0 0 3 0 5 2 0 0 2 ] A [ IC , t n e r r u C r o t c e ] [ g R , e c n a t s i s e R e t a G l 0 l 5 o 1 C 0 0 1 0 3 5 2 0 2 5 1 0 1 5 0 Ω Fig 7. Switching Loss vs. Gate Resistance Fig 8. Turn-On Characteristics vs. Collector Current 0 0 1 0 0 0 1 f f o T Common Emitter VGE = ± 15V, RG = 2Ω TC = 25℃ ━━ TC = 125℃ ------ f f o E n o E 0 0 1 ] J u [ s s o L g n i h c t i w S 0 1 f T ] s n [ e m i T g n i h c t i w S Common Emitter VGE = ± 15V, RG = 2Ω TC = 25℃ ━━ TC = 125℃ ------ 1 0 0 3 0 0 5 Common Emitter IC = 200A VCC = 300V 0 0 4 E G 2 1 9 ] A [ o TC = 25 C 6 F 0 0 2 3 0 0 0 1 I , t n e r r u C d r a w r o F Common Cathode VGE = 0V T C = 25℃ T C = 125℃ 0 0 3 V , e g a t l o V r e t t i m E e t a G 0 5 2 Fig 10. Switching Loss vs. Collector Current 5 1 ] V [ 0 0 2 ] A [ IC , t n e r r u C r o t c e l l 0 o 5 1 C 0 0 1 0 0 3 0 5 2 0 0 2 ] A [ IC , t n e r r u C r o t c e l 0 l 5 o 1 C 0 0 1 Fig 9. Turn-Off Characteristics vs. Collector Current 0 4 ] 3 V [ F V , e g a 2 l t o V d r a w r o F 1 0 ] C ©2003 Fairchild Semiconductor Corporation 0 0 7 0 0 6 0 0 5 Q , 0 n 0 [ 4 g a h 0 e 0 g 3 r a G 0 C 0 e 2 t 0 0 1 0 Fig 11. Gate Charge Characteristics Fig 12. Forward Characteristics(diode) FMG2G200US60 Rev. A FMG2G200US60 0 5 Common Cathode di/dt = 400A/㎲ T C = 25℃ T C = 100℃ Irr t rr 0 1 5 0 0 2 0 6 1 0 2 1 0 8 0 4 0 ] A [ IF , t n e r r u C d r a w r o F ] A ] [ s rn Ir 0 1 , t n x [ e r r Tr r u C , e m y i r T e v o y c r e e R v o e c e s R r e v e e s R r e k v a e e R P Fig 13. Reverse Recovery Characteristics(diode) ©2003 Fairchild Semiconductor Corporation FMG2G200US60 Rev. A FMG2G200US60 Package Dimension 7PM-HA 23.0 ±0.50 23.0 ±0.50 2- Ø6.5 ±0.30 18.0 ±0.60 13.0 ±0.60 40.0 ±0.50 26.0 ±0.60 G2 E2 E1 48.0 ±0.60 Mounting-Hole G1 3-M5 80.0 ±0.50 94.0 ±0.50 Name Plate 8.00 ±0.50 Ø1.3 28.0 ±0.50 +0.20 5.95 ±0.60 30.0 -0.60 +0.20 3-10.0 ±0.50 +0.00 2.80 -0.50 *0.5t 22.0 -0.60 3-16.0 ±0.50 45.5 ±0.50 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation FMG2G200US60 Rev. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I2