IGBT
FMG2G75US60
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
•
•
•
•
•
•
UL Certified No. E209204
Short Circuit rated 10us @ TC = 100°C, VGE = 15V
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 75A
High Input Impedance
Fast & Soft Anti-Parallel FWD
Package Code : 7PM-GA
E1/C2
Application
•
•
•
•
•
C1
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
E2
G1
E1
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
Viso
Mounting
Torque
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Curent
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ AC 1minute
FMG2G75US60
600
± 20
75
150
75
150
10
310
-40 to +150
-40 to +125
2500
2.0
2.0
Units
V
V
A
A
A
A
us
W
°C
°C
V
N.m
N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2001 Fairchild Semiconductor Corporation
FMG2G75US60 Rev. A
FMG2G75US60
September 2001
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
uA
nA
VGE = 0V, IC = 75mA
5.0
6.0
8.5
V
IC = 75A, VGE = 15V
--
2.2
2.8
V
VCE = 30V, VGE = 0V,
f = 1MHz
----
7056
672
180
----
pF
pF
pF
---------------
20
40
70
110
1.4
1.7
3.1
20
50
80
250
1.6
3.0
4.6
---200
-----------
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
VCC = 300 V, VGE = 15V
@ TC = 100°C
10
--
--
us
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 300 V, IC = 75A,
VGE = 15V
----
310
62
130
350
---
nC
nC
nC
©2001 Fairchild Semiconductor Corporation
VCC = 300 V, IC = 75A,
RG = 3.3Ω, VGE = 15V
Inductive Load, TC = 25°C
VCC = 300 V, IC = 75A,
RG = 3.3Ω, VGE = 15V
Inductive Load, TC = 125°C
FMG2G75US60 Rev. A
FMG2G75US60
Electrical Characteristics of IGBT T
C
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
= 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 75A
TC = 100°C
IF = 75A
di / dt = 150 A/us
Min.
--
Typ.
1.9
Max.
2.8
--
1.8
--
TC = 25°C
--
90
130
TC = 100°C
--
130
--
TC = 25°C
--
7
9
TC = 100°C
--
10
--
TC = 25°C
--
315
590
TC = 100°C
--
650
--
Units
V
ns
A
nC
Thermal Characteristics
Symbol
RθJC
RθJC
RθCS
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink
(Conductive grease applied)
Weight of Module
©2001 Fairchild Semiconductor Corporation
Typ.
--0.05
--
Max.
0.4
0.9
-190
Units
°C/W
°C/W
°C/W
g
FMG2G75US60 Rev. A
FMG2G75US60
Electrical Characteristics of DIODE T
200
Common Emitter
TC = 25ඓ
180
20V
15V
Common Emitter
V GE = 15V
T C = 25ඓ
T C = 125ඓ
12V
Collector Current, I C [A]
160
Collector Current, I C [A]
FMG2G75US60
200
140
120
Vge = 10V
100
80
60
40
160
120
80
40
20
0
0
0
2
4
6
8
0.3
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
100
20
V CC = 300V
Load Current : peak of square wave
Common Emitter
V GE = 15V
4
80
Load Current [A]
150A
3
75A
2
IC = 40A
1
60
40
20
0
Duty cycle : 50%
Tc = 100ඓ
Power Dissipation = 100W
0
0
30
60
90
120
150
0.1
1
10
Case Temperature, Tc [ඓ]
100
1000
Frequency [Khz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
20
Common Emitter
TC = 125ඓ
Collector - Emitter Voltage, V CE [V]
Common Emitter
TC = 25ඓ
Collector - Emitter Voltage, V CE [V]
10
Fig 2. Typical Saturation Voltage Characteristics
5
Collector - Emitter Voltage, V CE [V]
1
Collector - Emitter Voltage, V CE [V]
16
12
8
150A
4
75A
Ic = 40A
0
16
12
8
150A
75A
4
Ic = 40A
0
0
4
8
12
16
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2001 Fairchild Semiconductor Corporation
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Fig 6. Saturation Voltage vs. VGE
FMG2G75US60 Rev. A
Common Emitter
V GE = 0V, f = 1MHz
T C = 25ඓ
14000
Common Emitter
VCC = 300V, VGE = +/- 15V
IC = 75A
0
TC = 25 C
TC = 125 C
Cies
Switching Time [ns]
Capacitance [pF]
Ton
0
12000
10000
8000
6000
Coes
4000
Tr
100
Cres
2000
10
0
1
1
10
10
Gate Resistance, RG [Ω ]
Collector - Emitter Voltage, V CE [V]
Fig 8. Turn-On Characteristics vs.
Fig 7. Capacitance Characteristics
Common Emitter
VCC = 300V, VGE = +/- 15V
IC = 75A
Common Emitter
VCC = 300V, VGE = +/- 15V
IC = 75A
0
10000
TC = 25 C
0
TC = 25 C
0
0
TC = 125 C
TC = 125 C
Toff
Tf
Eon
Switching Loss [uJ]
Switching Time [ns]
1000
Eoff
100
1000
1
10
1
10
Gate Resistance, Rg [Ω ]
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
VCC = 300V, VGE = +/- 15V
RG = 3.3Ω
Common Emitter
VCC = 300V, VGE = +/- 15V
RG = 3.3Ω
0
0
TC = 25 C
Ton
100
Tr
Switching Time [ns]
Switching Time [ns]
TC = 25 C
1000
0
TC = 125 C
0
TC = 125 C
Toff
Tf
Toff
Tf
100
10
20
40
60
80
100
120
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
140
20
40
60
80
100
120
140
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMG2G75US60 Rev. A
FMG2G75US60
1000
16000
FMG2G75US60
15
Gate - Emitter Voltage, V GE [ V ]
Common Emitter
VCC = 300V, VGE = +/- 15V
RG = 3.3Ω
0
TC = 25 C
Switching Loss [uJ]
10000
0
TC = 125 C
Eoff
Eon
Eoff
1000
Eon
Common Emitter
RL = 4 Ω
T C = 25ඓ
12
300 V
9
200 V
VCC = 100 V
6
3
0
100
20
40
60
80
100
120
0
140
50
100
Collector Current, IC [A]
150
200
250
300
350
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
500
IC MAX. (Pulsed)
IC MAX. (Continuous)
100
50us
100us
Collector Current, I C [A]
Collector Current, I C [A]
100
1፬
10
DC Operation
Single Nonrepetitive
Pulse TC = 25ඓ
Curves must be derated
linerarly with increase
in temperature
1
0.1
10
Safe Operating Area
o
V GE = 20V, TC = 100 C
1
0.3
1
10
100
1000
1
10
100
1000
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
500
Thermal Response, Zthjc [ඓ/W]
1
Collector Current, I C [A]
100
10
1
0.1
Single Nonrepetitive
Pulse TJ ౘ 125ඓ
V GE = 15V
RG = 3.3 Ω
0
100
200
300
400
500
Collector-Emitter Voltage, VCE [V]
Fig 17. RBSOA Characteristics
©2001 Fairchild Semiconductor Corporation
600
700
0.1
0.01
T C = 25ඓ
IGBT :
DIODE :
1E-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedance
FMG2G75US60 Rev. A
Peak Reverse Recovery Current I rr [A]
Reverse Recovery Time Trr [x10ns]
Common Cathode
VGE = 0V
TC = 25ඓ
TC = 125ඓ
160
Forward Current, I F [A]
FMG2G75US60
20
200
120
80
40
0
0
1
2
Forward Voltage, V F [V]
Fig 19. Forward Characteristics
©2001 Fairchild Semiconductor Corporation
3
4
T rr
10
Irr
5
Common Cathode
di/dt = 150A/፫
T C = 25ඓ
T C = 100ඓ
2
0
10
20
30
40
50
60
70
80
Forward Current, IF [A]
Fig 20. Reverse Recovery Characteristics
FMG2G75US60 Rev. A
FMG2G75US60
Package Dimension
7PM-GA
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
FMG2G75US60 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4
