FMS6G10US60
Compact & Complex Module
Features
Description
• Short Circuit Rated 10µs @ TC = 100°C, VGE = 15V
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control and general
inverters where short-circuit ruggedness is required.
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 10A
• High Input Impedance
• Built-in 3 Phase Rectifier Circuit
• Fast & Soft Anti-Parallel FWD
• Built-in NTC Thermistor
Applications
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS
4
5
21
22
20
23
17
19
16
18
14
13
24
8
10
9
3
6
15
7
NTC
11
Package Code : 25PM-AA
©2005 Fairchild Semiconductor Corporation
FMS6G10US60 Rev. B1
12
Internal Circuit Diagram
1
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FMS6G10US60 Compact & Complex Module
August 2005
TC = 25°C unless otherwise noted
Symbol
Inverter
Converter
Common
Description
FMS6G10US60
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Collector Current
ICM (1)
Pulsed Collector Current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
PD
Maximum Power Dissipation
@ TC = 25°C
66
W
TSC
Short Circuit Withstand Time
@ TC = 100°C
10
µs
@ TC = 80°C
@ TC = 80°C
10
A
20
A
10
A
20
A
VRRM
Repetitive Peak Reverse Voltage
1600
V
IO
Average Output Rectified Current
10
A
IFSM
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
100
A
I2t
Energy pulse @ 1Cycle at 60Hz
42
A2 s
TJ
Operating Junction Temperature
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
VISO
Isolation Voltage
@ AC 1minute
2500
V
Mounting part Screw
@ M4
2.0
N·m
Mounting Torque
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FMS6G10US60
FMS6G10US60
25PM-AA
--
--
--
(2) TMC2 Relibility test was done under -45°C ~ 125°C
FMS6G10US60 Rev. B1
2
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FMS6G10US60 Compact & Complex Module
Absolute Maximum Ratings
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250µA
600
--
--
V
∆BVCES/
∆TJ
Temperature Coeff. of Breakdown
Voltage
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
250
µA
IGES
Gate - Emitter Leakage Current
VGE = VGES, VCE = 0V
--
--
± 100
nA
5.0
6.5
8.5
V
--
2.1
2.7
V
--
710
--
pF
On Characteristics
VGE(th)
Gate - Emitter Threshold Voltage
IC = 10mA, VCE = VGE
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 10A,
VGE = 15V
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
--
57
--
pF
--
12
--
pF
--
65
130
ns
--
65
130
ns
--
80
160
ns
--
100
200
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
--
0.15
--
mJ
Eoff
Turn-Off Switching Loss
--
0.2
--
mJ
--
70
140
ns
--
60
120
ns
--
90
180
ns
--
200
350
ns
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 25°C
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
--
0.16
--
mJ
Eoff
Turn-Off Switching Loss
--
0.3
--
mJ
Tsc
Short Circuit Withstand Time
VCC = 300 V, VGE = 15V
@ TC = 100°C
10
--
--
µs
VCE = 300 V, IC = 10A,
VGE = 15V
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
FMS6G10US60 Rev. B1
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 125°C
3
--
35
50
nC
--
8
15
nC
--
12
20
nC
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FMS6G10US60 Compact & Complex Module
Electrical Characteristics of IGBT @ Inverter
Symbol
VFM
trr
Irr
Qrr
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Diode Forward Voltage
IF = 10A
Diode Reverse Recovery Time
IF = 10A
di / dt = 20 A/µs
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Electrical Characteristics of DIODE @ Converter T
VFM
IRRM
Parameter
IF = 10A
Repetitive Reverse Current
VR = VRRM
Max.
Units
V
TC = 25°C
--
1.9
2.8
--
2.0
--
TC = 25°C
--
85
150
TC = 100°C
--
110
--
TC = 25°C
--
0.7
1.4
TC = 100°C
--
1.0
--
TC = 25°C
--
30
105
TC = 100°C
--
55
--
ns
A
nC
= 25°C unless otherwise noted
Test Conditions
Diode Forward Voltage
Typ.
TC = 100°C
C
Symbol
Min.
Min.
Typ.
Max.
Units
V
TC = 25°C
--
1.1
1.5
TC = 100°C
--
1.0
--
TC = 25°C
--
--
8
TC = 100°C
--
5
--
mA
Thermal Characteristics
Symbol
Inverter
Converter
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case (IGBT Part, per 1/6 Module)
--
1.9
°C/W
RθJC
Junction-to-Case (DIODE Part, per 1/6 Module)
--
2.9
°C/W
Junction-to-Case (DIODE Part, per 1/6 Module)
--
2.5
°C/W
Weight of Module
60
--
g
RθJC
Weight
NTC Thermistor Characteristics
Symbol
Thermistor
Parameter
Tol.
Typ.
Units
KΩ
R25
Rated Resistance @ TC = 25°C
+/- 5 %
4.7
B(25/100)
B - Value
+/- 3 %
3530
FMS6G10US60 Rev. B1
4
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FMS6G10US60 Compact & Complex Module
Electrical Characteristics of DIODE @ Inverter
FMS6G10US60 Compact & Complex Module
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
0
3
V
5
1
V
0
2
0
4
o
5
2
V
2
1
5
3
Common Emitter
TC = 25 C
0
3
0
2
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
5
2
5
1
0
2
E
G
0
1
V
0
1
=
V
5
1
0
1
5
5
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
Common Emitter
VGE = 15 V
TC = 25℃ ℃℃
TC = 125℃ ------
0
0
10
Common Emitter
VGE = 15 V
0
.
3
T
B
G
I
5
.
2
A
0
1
0
.
2
A
5
=
IC
5
.
1
0.1
e
s
l
u
P
e
l
g
n
i
S
)
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
(
0
5
1
0
0
1
0
5
10
]
C
o
[
C
T
,
e
r
u
t
a
r
e
p
m
e
T
e
s
C
0 a
0
5
0.
1
-5
-4
10
10
-3
10
-2
-1
10
10
0
10
1
Rectangular Pulse Duration [sec]
Figure 6. Saturation Voltage vs. VGE
0
2
0
2
]
V
[
]
V
[
8
8
A
0
2
A
0
1
4
A
0
2
A
5
=
IC
A
0
1
A
5
=
IC
4
0
0
0
2
]
6 V
1 [
V
,
e
2 g
1 a
t
l
o
V
r
e
t
t
8 i
m
E
e
G
t
4 a
0
0
2
]
6 V
1 [
V
,
e
2 g
1 a
t
l
o
V
r
e
t
t
8 i
m
E
e
G
t
4 a
0
E
G
E
G
FMS6G10US60 Rev. B1
Common Emitter
TC = 125℃
2
1
2
1
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
o
C
)
t
a
s
(
E
C
6
1
Common Emitter
TC = 25℃
6
1
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
o
C
1
0.01
Figure 5. Saturation Voltage vs. VGE
)
t
a
s
(
E
C
D
R
F
A
0
2
Thermal Response, Zthjc [℃/W]
5
.
3
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
o
C
)
t
a
s
(
E
C
]
E
C
E
C
Figure 4. Transient Thermal Impedance
0
.
4
]
V
[
0 V
1 [
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
1 o
t
c
e
l
l
o
C
8
]
V
[
6 V
,
e
g
a
t
l
o
V
r
4 e
t
t
i
m
E
r
o
t
2 c
e
l
l
o
C
0
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
5
www.fairchildsemi.com
(Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
0
0
0
1
0
0
6
1
s
e
i
C
0
0
4
1
o
TC = 25 C
0
0
2
1
n
o
T
s
e
r
C
0
0
8
0
0
6
r
T
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
s
e
o
C
0
0
0
1
0
0
4
]
F
p
[
e
c
n
a
t
i
c
a
p
a
C
Common Emitter
VCC = 300 V, VGE = ± 15 V
IC = 10 A
TC = 25℃ ℃℃
TC = 125℃ ------
Common Emitter
VGE = 0 V, f = 1 MHz
0
0
2
0
0
4
1
0
2
1
0
0
1
]
[
G
R
,
e
c
n
a
e
R
f
f
o
E
n
o
E
f
f
o
E
f
T
0
0
1
f
T
0
0
1
0
4
1
0
2
1 ]
[
G
0 R
0 ,
1 e
c
n
a
e
R
t
0 s
8 i
s
a
G
0 e
6 t
0
4
0
2
0
4
1
0
2
1
0
0
1
0
8
[
G
R
,
e
c
n
a
t
s
i
s
e
R
G
e
0 t
6 a
0
4
0
2
Ω]
Ω
Figure 12. Turn-Off Characteristics vs.
Collector Current
0
0
0
1
0
0
0
1
Common Emitter
VGE = ± 15 V, RG = 20Ω
TC = 25℃ ℃℃
TC = 125℃ ------
Common Emitter
VGE = ± 15 V, RG = 20Ω
TC = 25℃ ℃℃
TC = 125℃ ------
f f
f
T
o
T
f
f
o
T
r
T
f
T
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
n
o
T
0
0
1
0
2
6
]
A
[
5
1 IC
,
t
n
e
r
r
u
C
r
o
t
o
C
0 c
1 e
l
l
5
0
2
]
A
[
5
1 IC
,
t
n
e
r
r
u
C
r
o
t
o
C
c
0 e
1 l
l
5
FMS6G10US60 Rev. B1
Common Emitter
VCC = 300 V, VGE = ± 15 V
IC = 10 A
TC = 25℃ ℃℃
TC = 125℃ ------
0
0
0
1
f
f
o
T
]
J
u
[
s
s
o
l
g
n
i
h
c
t
i
w
S
Figure 11. Turn-On Characteristics vs.
Collector Current
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
t
0 s
8 i
s
a
G
]
V
C
Figure 10. Switching Loss vs. Gate Resistance
Common Emitter
VCC = 300 V, VGE = ± 15 V
IC = 10 A
TC = 25℃ ℃℃
TC = 125℃ ------
0
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
0 e
6 t
0
4
0
2
0 [
1
E
V
,
e
g
a
t
l
o
V
r
e
t
t
i
1 m
E
r
o
t
c
e
l
l
o
C
1
.
0
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Ω
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FMS6G10US60 Compact & Complex Module
Typical Performance Characteristics
FMS6G10US60 Compact & Complex Module
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
5
1
3
0
[A]
100us
10
C
0
1
50us
IC MAX. (Continuous)
1
1
.
0
Collector Current, I
1ms
DC Operation
1
0
.
0
Single Nonrepetitive
Pulse T C = 25℃
Curves must be derated
linearly with increase
in temperature
1
0
0
0
1
0
0
1
0
1
1
1
.
0
0.1
Single Nonrepetitive
Pulse TJ ≤ 125℃
VGE = 15V
RG = 20 Ω
0
100
200
300
400
500
600
700
]
V
[
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
o
C
E
C
Collector-Emitter Voltage, VCE [V]
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Characteristics
20
40
30
Peak Reverse Recovery Current, I rr [A]
Reverse Recovery Time, T rr [x10ns]
Common Cathode
VGE = 0V
T C = 25℃
T C = 125℃
35
[A]
0
4
5
3
C
n
0
3 ]
Q
,
5 [
2
g
a
h
e
0 g
2 r
t
a
5 C
1 e
0 G
1
5
0
0
2
50
C
F
V
0
0
2
6
f
f
o
E
]
A
[
5
1 IC
,
t
n
e
r
r
u
C
r
o
t
o
C
c
0 e
1 l
l
5
Figure 16. RBSOA Characteristics
IC MAX. (Pulsed)
Forward Current, I
V
0
0
3
o
TC = 25 C
E
G
0
0
1
I
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
C
C
n
o
E
0
0
1
Figure 15. SOA Characteristics
]
A
[
Common Emitter
RL = 30 Ω
9
f
f
o
E
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
e
t
a
G
V
0
0
1
=
V
]
V
[
2
1
0
0
0
1
]
J
u
[
s
s
o
L
g
n
i
h
c
t
i
w
S
Common Emitter
VGE = ± 15 V, RG = 20Ω
TC = 25℃ ℃℃
TC = 125℃ ------
25
20
15
10
5
0
0
1
2
3
T rr
1
Irr
Common Cathode
di/dt = 20A/㎲
T C = 25℃
T C = 100℃ ---------
0.1
2
4
4
6
8
10
12
Forward Current, IF [A]
Forward Voltage, VF [V]
FMS6G10US60 Rev. B1
10
7
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(Continued)
Figure 19. Rectifier (Converter) Characteristics
Figure 20. Rectifier (Converter) Characteristics
0
0
1
0
0
0
1
0
0
1
C
o
5
2
1
=
C
T
C
o
5
2
1
=
C
T
0
1
C
o
5
2
1
1
C
o
5
2
1
.
0
1
0
.
0
]
A
u
[
IR
,
t
n
e
r
r
u
C
e
s
r
e
v
e
R
0
1
4
.
1
2
.
1
0
.
1
8
.
0
]
V
[
VF
,
e
g
a
t
l
o
V
s
u
o
e
n
a
t
n
a
t
6 s
.
n
0
I
0
0
6
1
0
0
2
1
0
0
8
]
V
[
VR
,
e
g
a
t
l
o
V
e
s
r
e
v
0 e
0 R
4
0
4
.
0
3
E
1
1
.
0
]
A
[
IF
,
t
n
e
r
r
u
C
d
r
a
w
r
o
F
s
u
o
e
n
a
t
n
a
t
s
n
I
Figure 21. NTC Characteristics
6
1
2
1
Ω
]
K
[
R
,
e
c
n
a
t
s
i
s
e
R
8
4
0
5
2
1
0
0
1
5
7
0
5
5
2
0
]
C
o
[
T
,
e
r
u
t
a
r
e
p
m
e
T
FMS6G10US60 Rev. B1
8
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FMS6G10US60 Compact & Complex Module
Typical Performance Characteristics
FMS6G10US60 Compact & Complex Module
Mechanical Dimensions
25PM-AA
-. Pin Coordinate
Name Plate
82.2 ±0.20
+0.20
x
y
1
0.0
0.0
2
-3.0
0.0
3
-6.0
0.0
4
-13.0
0.0
5
-18.0
0.0
6
-25.0
0.0
7
-29.0
0.0
8
-32.0
0.0
71.0 -0.10
4- Ø6.0
4- Ø2.0
Coordinate
Pin
#No
±0.10 Dp
57.0 ±0.20
6.0
+0.20
22
17.5 ±0.20
1
4.3±0.20
23.0±0.15
21.0 ±0.20
3.2 -0.10
+0.20
11.2 -0.10
+0.20
Ø1.0 ±0.05
+0.20
+0.20
5.1 -0.10
4.3±0.20
+0.20
16.7 -0.10
14.0±0.15
12
16.3 -0.10
+0.20
30.8 -0.10
37.9 ±0.20
15
2- Ø4.3 -0.00
Mounting-Hole
9
-35.0
0.0
10
-38.0
0.0
11
-46.5
0.0
12
-49.5
0.0
13
-49.5
11.5
14
-49.5
20.0
15
-49.5
28.0
16
-32.0
28.0
17
-29.0
28.0
18
-23.0
28.0
19
-20.0
28.0
20
-14.0
28.0
21
-11.0
28.0
22
3.5
28.0
23
3.5
20.0
24
3.5
11.5
25
3.5
5.5
* datum pin : #1
* Pin Tilt : ±0.15
Dimensions in Millimeters
FMS6G10US60 Rev. B1
9
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Advance Information
Formative or In
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This datasheet contains the design specifications for
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Rev. I16
10
FMS6G10US60 Rev. B1
www.fairchildsemi.com
FMS6G10US60 Compact & Complex Module
TRADEMARKS
