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FNB43060T2
Motion SPM® 45 Series
Features
General Description
• UL Certified No. E209204 (UL1557)
FNB43060T2 is an advanced Motion SPM® 45 module
providing a fully-featured, high-performance inverter
output stage for AC Induction, BLDC, and PMSM
motors. These modules integrate optimized gate drive
of the built-in IGBTs to minimize EMI and losses, while
also providing multiple on-module protection features
including under-voltage lockouts, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's internal IGBTs.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
• 600 V - 30 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low Thermal Resistance Using Ceramic Substrate
• Low-Loss, Short-Circuit Rated IGBTs
• Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout
• Built-In NTC Thermistor for Temperature Monitoring
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• Isolation Rating: 2000 Vrms / min.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9084 - Smart Power Module, Motion SPM® 45 H
V3 Series User’s Guilde
• AN-9072 - Smart Power Module Motion SPM® in
SPM45H Thermal Performance Information
• AN-9071 - Smart Power Module Motion SPM® in
SPM45H Mounting Guidance
• AN-9760 - PCB Design Guidance for SPM®
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
Device Marking
Package
Packing Type
Quantity
FNB43060T2
FNB43060T2
SPMAB-C26
Rail
12
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
1
www.fairchildsemi.com
FNB43060T2 Motion SPM® 45 Series
March 2016
FNB43060T2 Motion SPM® 45 Series
Integrated Power Functions
• 600 V - 30 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)
Integrated Drive, Protection, and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out Protection (UVLO)
Note: Available bootstrap circuit example is given in Figures 15.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
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FNB43060T2 Motion SPM® 45 Series
Pin Descriptions
Pin Number
Pin Name
1
VTH
2
RTH
3
P
Positive DC-Link Input
4
U
Output for U-Phase
5
V
Output for V-Phase
6
W
Output for W-Phase
7
NU
Negative DC-Link Input for U-Phase
8
NV
Negative DC-Link Input for V-Phase
9
NW
Negative DC-Link Input for W-Phase
10
CSC
Shut Down Input for Short-circuit Current Detection Input
11
VFO
Fault Output
12
IN(WL)
Signal Input for Low-Side W-Phase
13
IN(VL)
Signal Input for Low-Side V-Phase
14
IN(UL)
Signal Input for Low-Side U-Phase
15
COM
Common Supply Ground
16
VDD(L)
Low-Side Common Bias Voltage for IC and IGBTs Driving
17
VDD(H)
High-Side Common Bias Voltage for IC and IGBTs Driving
18
IN(WH)
Signal Input for High-Side W-Phase
19
IN(VH)
Signal Input for High-Side V-Phase
20
IN(UH)
Signal Input for High-Side U-Phase
21
VS(W)
High-Side Bias Voltage Ground for W-Phase IGBT Driving
22
VB(W)
High-Side Bias Voltage for W-Phase IGBT Driving
23
VS(V)
High-Side Bias Voltage Ground for V-Phase IGBT Driving
24
VB(V)
High-Side Bias Voltage for V-Phase IGBT Driving
25
VS(U)
High-Side Bias Voltage Ground for U-Phase IGBT Driving
26
VB(U)
High-Side Bias Voltage for U-Phase IGBT Driving
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
Pin Description
Thermistor Bias Voltage
Series Resistor for the Use of Thermistor (Temperature Detection)
3
www.fairchildsemi.com
FNB43060T2 Motion SPM® 45 Series
Internal Equivalent Circuit and Input/Output Pins
VTH (1)
Thermistor
(26) VB(U)
(25) VS(U)
(24) VB(V)
(23) VS(V)
RTH (2)
P (3)
UVB
UVS
VVB
OUT(UH)
UVS
U(4)
VVS
(22) VB(W)
WVB
(21) VS(W)
(20) IN(UH)
(19) IN(VH)
(18) IN(WH)
WVS
IN(UH)
OUT(VH)
VVS
V (5)
IN(VH)
IN(WH)
(17) VDD(H)
(16) VDD(L)
(15) COM
(14) IN(UL)
(13) IN(VL)
(12) IN(WL)
(11) VFO
(10) CSC
VDD
OUT(WH)
COM
WVS
W(6)
VDD
OUT(UL)
COM
NU (7)
IN(UL)
IN(VL)
IN(WL)
OUT(VL)
NV (8)
VFO
CSC
OUT(WL)
NW (9)
Figure 3. Internal Block Diagram
Note:
1. Inverter high-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT.
2. Inverter low-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions.
3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
4
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unless otherwise specified.)
Inverter Part
Symbol
VPN
VPN(Surge)
VCES
Parameter
Conditions
Supply Voltage
Applied between P - NU, NV, NW
Supply Voltage (Surge)
Applied between P - NU, NV, NW
Rating
Unit
450
V
Collector - Emitter Voltage
500
V
600
V
± IC
Each IGBT Collector Current
TC = 25°C, TJ ＜ 150°C
30
A
± ICP
Each IGBT Collector Current (Peak)
TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse
Width (Note 4)
60
A
PC
Collector Dissipation
TC = 25°C per One Chip (Note 4)
59
W
TJ
Operating Junction Temperature
- 40 ~ 150
°C
Rating
Unit
Control Part
Symbol
Parameter
Conditions
VDD
Control Supply Voltage
Applied between VDD(H), VDD(L) - COM
20
V
VBS
High - Side Control Bias Voltage
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20
V
VIN
Input Signal Voltage
Applied between IN(UH), IN(VH), IN(WH), -0.3 ~ VDD + 0.3
IN(UL), IN(VL), IN(WL) - COM
V
VFO
Fault Output Supply Voltage
Applied between VFO - COM
-0.3 ~ VDD + 0.3
V
IFO
Fault Output Current
Sink Current at VFO pin
VSC
Current-Sensing Input Voltage
Applied between CSC - COM
1
mA
-0.3 ~ VDD+ 0.3
V
Rating
Unit
Bootstrap Diode Part
Symbol
VRRM
Parameter
Conditions
600
V
IF
Maximum Repetitive Reverse Voltage
Forward Current
TC = 25°C, TJ ＜ 150°C
0.5
A
IFP
Forward Current (Peak)
TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse
Width (Note 4)
2.0
A
TJ
Operating Junction Temperature
-40 ~ 150
°C
Rating
Unit
400
V
-40 ~ 125
°C
Total System
Symbol
Parameter
Conditions
VPN(PROT)
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
VDD = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 s
TC
Module Case Operation Temperature
See Figure 2
TSTG
Storage Temperature
VISO
Isolation Voltage
60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
-40 ~ 125
°C
2000
Vrms
Thermal Resistance
Symbol
Rth(j-c)Q
Rth(j-c)F
Parameter
Junction to Case Thermal Resistance
(Note 5)
Conditions
Min.
Typ.
Max.
Unit
Inverter IGBT Part (per 1 / 6 module)
-
-
2.1
°C / W
Inverter FWDi Part (per 1 / 6 module)
-
-
2.8
°C / W
Note:
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (TC), please refer to Figure 2.
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
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FNB43060T2 Motion SPM® 45 Series
Absolute Maximum Ratings (TJ = 25°C,
Inverter Part
Symbol
VCE(SAT)
VF
HS
tON
Parameter
Conditions
Min.
Typ.
Max.
Unit
Collector - Emitter Saturation VDD = VBS = 15 V
Voltage
VIN = 5 V
IC = 30 A, TJ = 25°C
-
1.65
2.25
V
FWDi Forward Voltage
VIN = 0 V
IF = 30 A, TJ = 25°C
-
2.00
2.60
V
Switching Times
VPN = 300 V, VDD = VBS = 15 V, IC = 30 A
TJ = 25°C
VIN = 0 V 5 V, Inductive Load
(Note 6)
0.45
0.85
1.35
s
-
0.20
0.50
s
-
0.70
1.20
s
-
0.15
0.45
s
tC(ON)
tOFF
tC(OFF)
-
0.10
-
s
0.5
0.90
1.40
s
-
0.30
0.60
s
-
0.80
1.30
s
tC(OFF)
-
0.15
0.45
s
trr
-
0.15
-
s
-
-
1
mA
trr
LS
VPN = 300 V, VDD = VBS = 15 V, IC = 30 A
TJ = 25°C
VIN = 0 V 5 V, Inductive Load
(Note 6)
tON
tC(ON)
tOFF
Collector - Emitter Leakage VCE = VCES
Current
ICES
Note:
6. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
100% I C 100% I C
t rr
V CE
IC
IC
V CE
V IN
V IN
t ON
t OFF
t C(ON)
t C(OFF)
10% I C
V IN(ON)
90% I C
V IN(OFF)
10% V CE
10% V CE
10% I C
(b) turn-off
(a) turn-on
Figure 4. Switching Time Definition
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
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FNB43060T2 Motion SPM® 45 Series
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
IGBT Turn-on, Eon
IGBT Turn-off, Eoff
FRD Turn-off, Erec
1800
1600
SWITCHING LOSS ESW [uJ]
SWITCHING LOSS ESW [uJ]
1600
Inductive Load, VPN = 300V, VDD=15V, TJ=150℃
2000
IGBT Turn-on, Eon
IGBT Turn-off, Eoff
FRD Turn-off, Erec
1800
1400
1200
1000
800
600
400
FNB43060T2 Motion SPM® 45 Series
Inductive Load, VPN = 300V, VDD=15V, TJ=25℃
2000
1400
1200
1000
800
600
400
200
200
0
0
0
5
10
15
20
25
0
30
5
10
15
20
25
30
COLLECTOR CURRENT, IC [AMPERES]
COLLECTOR CURRENT, IC [AMPERES]
Figure 5. Switching Loss Characteristics (Typical)
Control Part
Symbol
Parameter
IQDDH
Quiescent VDD Supply
Current
IQDDL
IPDDH
Operating VDD Supply
Current
IPDDL
Conditions
Min.
Typ.
Max.
Unit
VDD(H) = 15 V, IN(UH,VH,WH) = 0 V
VDD(H) - COM
-
-
0.10
mA
VDD(L) = 15 V, IN(UL,VL, WL) = 0 V
VDD(L) - COM
-
-
2.65
mA
VDD(H) = 15 V, fPWM = 20 kHz, duty VDD(H) - COM
= 50%, Applied to One PWM Signal Input for High-Side
-
-
0.15
mA
VDD(L) = 15 V, fPWM = 20 kHz, duty VDD(L) - COM
= 50%, Applied to One PWM Signal Input for Low-Side
-
-
4.00
mA
IQBS
Quiescent VBS Supply
Current
VBS = 15 V, IN(UH, VH, WH) = 0 V
VB(U) - VS(U), VB(V) VS(V), VB(W) - VS(W)
-
-
0.30
mA
IPBS
Operating VBS Supply
Current
VDD = VBS = 15 V, fPWM = 20 kHz, VB(U) - VS(U), VB(V) Duty = 50%, Applied to One PWM VS(V), VB(W) - VS(W)
Signal Input for High-Side
-
-
2.00
mA
VFOH
Fault Output Voltage
VSC = 0 V, VFO Circuit: 4.7 k to 5 V Pull-up
4.5
-
-
V
Short Circuit Trip Level
VDD = 15 V (Note 7)
VSC = 1 V, VFO Circuit: 4.7 k to 5 V Pull-up
VFOL
VSC(ref)
UVDDD
UVDDR
UVBSD
Supply Circuit
Under-Voltage
Protection
UVBSR
tFOD
Fault-Out Pulse Width
VIN(ON)
ON Threshold Voltage
VIN(OFF)
OFF Threshold Voltage
RTH
Resistance of
Thermistor
CSC - COM
-
-
0.5
V
0.45
0.50
0.55
V
Detection level
10.5
-
13.0
V
Reset level
11.0
-
13.5
V
Detection level
10.0
-
12.5
V
Reset level
10.5
-
13.0
V
30
-
-
s
-
-
2.6
V
Applied between IN(UH, VH, WH) - COM,
IN(UL, VL, WL) - COM
0.8
-
-
V
@TTH = 25°C, (Note 8)
-
47
-
k
@TTH = 100°C
-
2.9
-
k
Note:
7. Short-circuit current protection is functioning only at the low-sides.
8. TTH is the temperature of thermistor itselt. To know case temperature (TC), please make the experiment considering your application.
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
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550
R-T Curve in 50℃ ~ 125℃
500
20
450
16
Resistance[k]
Resistance[k]
FNB43060T2 Motion SPM® 45 Series
R-T Curve
600
400
350
300
250
12
8
4
200
0
50
60
70
150
80
90
100
110
120
Temperature [℃ ]
100
50
0
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
Temperature TTH[℃ ]
Figure. 6. R-T Curve of The Built-In Thermistor
Bootstrap Diode Part
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VF
Forward Voltage
IF = 0.1 A, TC = 25°C
-
2.5
-
V
trr
Reverse-Recovery Time
IF = 0.1 A, dIF / dt = 50 A / s, TJ = 25°C
-
80
-
ns
Built-In Bootstrap Diode VF-IF Characteristic
1.0
0.9
0.8
0.7
IF [A]
0.6
0.5
0.4
0.3
0.2
0.1
o
TC=25 C
0.0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
VF [V]
Figure 7. Built-In Bootstrap Diode Characteristic
Note:
9. Built-in bootstrap diode includes around 15 Ω resistance characteristic.
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
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Symbol
Parameter
Conditions
Applied between P - NU, NV, NW
Min.
Typ.
Max.
Unit
-
300
400
V
VPN
Supply Voltage
VDD
Control Supply Voltage
Applied between VDD(H), VDD(L) - COM
13.5
15.0
16.5
V
VBS
High-Side Bias Voltage
Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) VS(W)
13.0
15.0
18.5
V
-1
-
1
V / s
1.0
-
-
s
-
20
kHz
4
V
s
dVDD / dt, Control Supply Variation
dVBS / dt
tdead
Blanking Time for
Preventing Arm-Short
For each input signal
fPWM
PWM Input Signal
-40C TC 125°C, -40C TJ 150°C
-
VSEN
Voltage for Current
Sensing
Applied between NU, NV, NW - COM
(Including Surge-Voltage)
-4
Minimum Input Pulse
Width
VDD = VBS = 15 V, IC 60 A, Wiring Inductance
between NU, V, W and DC Link N < 10nH (Note 10)
1.2
-
-
1.2
-
-
- 40
-
150
PWIN(ON)
PWIN(OFF)
TJ
Junction Temperature
C
Note:
10. This product might not make response if input pulse width is less than the recommanded value.
Allowable Output Current, IOrms [Arms]
28
fSW = 5 kHz
21
14
VDC = 300 V, VDD = VBS = 15 V
7
fSW = 15 kHz
Tj = 150℃ , TC = 125℃
M.I. = 0.9, P.F. = 0.8
Sinusoidal PWM
0
0
20
40
60
80
100
120
140
Case Temperature, TC [℃ ]
Figure 8. Allowable Maximum Output Current
Note:
11. This allowable output current value is the reference data for the safe operation of this product. This may be different from the actual application and operating condition.
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
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FNB43060T2 Motion SPM® 45 Series
Recommended Operating Conditions
Parameter
Device Flatness
Mounting Torque
Conditions
See Figure 9
Min.
Typ.
Max.
Unit
0
-
+ 120
m
Mounting Screw: M3
Recommended 0.7 N • m
0.6
0.7
0.8
N•m
See Figure 10
Recommended 7.1 kg • cm
6.2
7.1
8.1
kg • cm
-
11.00
-
g
Weight
Figure 9. Flatness Measurement Position
Pre - Screwing : 1→2
2
Final Screwing : 2→1
1
Figure 10. Mounting Screws Torque Order
Note:
12. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction.
13. Avoid one-sided tightening stress. Figure 10 shows the recommended torque order for mounting screws. Uneven mounting can cause the ceramic substrate of package to be
damaged. The pre-screwing torque is set to 20 ~ 30% of maximum torque rating.
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
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FNB43060T2 Motion SPM® 45 Series
Mechanical Characteristics and Ratings
FNB43060T2 Motion SPM® 45 Series
Time Charts of Protective Function
Input Signal
Protection
Circuit State
RESET
SET
RESET
UVDDR
a1
Control
Supply Voltage
a6
UVDDD
a3
a2
a7
a4
Output Current
a5
Fault Output Signal
Figure 11. Under-Voltage Protection (Low-Side)
a1 : Control supply voltage rises: After the voltage rises UVDDR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVDDD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts with a fixed pulse width.
a6 : Under voltage reset (UVDDR).
a7 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
Input Signal
Protection
Circuit State
RESET
SET
RESET
UVBSR
Control
Supply Voltage
b5
b1
UVBSD
b3
b6
b2
b4
Output Current
High-level (no fault output)
Fault Output Signal
Figure 12. Under-Voltage Protection (High-Side)
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR).
b6 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
©2016 Fairchild Semiconductor Corporation
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c6
Protection
Circuit State
SET
Internal IGBT
Gate - Emitter Voltage
FNB43060T2 Motion SPM® 45 Series
Lower Arms
Control Input
c7
RESET
c4
c3
c2
SC
c1
c8
Output Current
SC Reference Voltage
Sensing Voltage
of Shunt Resistance
Fault Output Signal
c5
CR Circuit Time
Constant Delay
Figure 13. Short-Circuit Protection (Low-Side Operation Only)
(with the external sense resistance and RC filter connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short circuit current detection (SC trigger).
c3 : All low-side IGBT’s gate are hard interrupted.
c4 : All low-side IGBTs turn OFF.
c5 : Fault output operation starts with a fixed pulse width.
c6 : Input HIGH: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c7 : Fault output operation finishes, but IGBT doesn’t turn on until triggering next signal from LOW to HIGH.
c8 : Normal operation: IGBT ON and carrying current.
Input/Output Interface Circuit
+5 V (for MCU or Control power)
SPM
R PF = 10 kΩ
IN (UH) , IN (VH) , IN(WH)
IN (UL) , IN (VL) , IN(WL)
MCU
VFO
COM
Figure 14. Recommended MCU I/O Interface Circuit
Note:
14. RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board.
The input signal section of the Motion SPM 45 product integrates 5 k(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the
signal voltage drop at input terminal.
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FNB43060T2 Rev.1.1
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CBS
CBSC
RS
(25) VS(U)
(20) IN(UH)
Gating UH
(24) VB(V)
CBSC
CBS
VS(U)
OUT(UH)
IN(UH)
U (4)
VS(U)
VB(V)
(23) VS(V)
(19) IN(VH)
Gating VH
(22) VB(W)
CBSC
CBS
RS
(21) VS(W)
IN(VH)
OUT(VH)
VS(V)
V (5)
M
VB(W)
VS(W)
(18) IN(WH)
Gating WH
IN(WH)
(17) VDD(H)
+15 V
CPS
P (3)
VS(V)
RS
M
C
U
HVIC
VB(U)
CPS
CPS
CSPC15
CSP15
CDCS
OUT(WH)
VS(W)
(15) COM
VDC
VDD
W (6)
COM
LVIC
+5 V
(16) VDD(L)
VDD
OUT(UL)
RPF
NU (7)
CSPC05 CSP05
RS
(11) VFO
Fault
CBPF
RSU
VFO
CPF
RS
(14) IN(UL)
RS
(13) IN(VL)
RS
(12) IN(WL)
Gating UL
Gating VL
Gating WL
CSC
OUT(VL)
IN(UL)
RF
RTH
Input Signal for
Short-Circuit Protection
RSV
IN(WL)
COM
(10) CSC
CPS CPS CPS
NV (8)
IN(VL)
OUT(WL)
CSC
NW (9)
RSW
(1) VTH
(2) RTH
THERMISTOR
Temp. Monitoring
U-Phase Current
V-Phase Current
W-Phase Current
Figure 15. Typical Application Circuit
Note:
15. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm).
16. VFO output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA.
17. CSP15 of around seven times larger than bootstrap capacitor CBS is recommended.
18. Input signal is active-HIGH type. There is a 5 k resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of
input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns (recommended RS = 100 Ω , CPS = 1 nF).
19. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.
20. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2 s. Do enough evaluaiton on the real system because short-circuit protection
time may vary wiring pattern layout and value of the RFCSC time constant.
21. The connection between control GND line and power GND line which includes the NU, NV, NW must be connected to only one point. Please do not connect the control GND
to the power GND by the broad pattern. Also, the wiring distance between control GND and power GND should be as short as possible.
22. Each capacitor should be mounted as close to the pins of the Motion SPM 45 product as possible.
23. To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive
capacitor of around 0.1 ~ 0.22 F between the P and GND pins is recommended.
24. Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays.
25. The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals
(recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 Ω ).
26. Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1 ~ 0.2 F R-category ceramic capacitors with good temperature and
frequency characteristics in CBSC.
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
13
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FNB43060T2 Motion SPM® 45 Series
(26) VB(U)
FNB43060T2 Motion SPM® 45 Series
Detailed Package Outline Drawings (FNB43060T2)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,
specifically the the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MO/MOD26AA.pdf
©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
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©2016 Fairchild Semiconductor Corporation
FNB43060T2 Rev.1.1
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