Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FNF51560TD1
Motion SPM® 55 Series
Features
General Description
• UL Certified No. E209204 (UL1557)
FNF51560TD1 is a Motion SPM 55 module providing a
fully-featured, high-performance inverter output stage for
AC Induction, BLDC, and PMSM motors. These modules
integrate optimized gate drive of the built-in IGBTs to
minimize EMI and losses, while also providing multiple
on-module protection features including under-voltage
lockouts, inter-lock function, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's robust shortcircuit-rated IGBTs. Separate negative IGBT terminals
are available for each phase to support the widest
variety of control algorithms.
• 600 V - 15 A 3-Phase IGBT Inverter Including Control
IC for Gate Drive and Protections
• Low-Loss, Short-Circuit Rated IGBTs
• Built-In Bootstrap Diodes in HVIC
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Active-HIGH interface, works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• HVIC for Gate Driving, Under-Voltage and Short-Circuit Current Protection
• Fault Output for Under-Voltage and Short-Circuit Current Protection
• Inter-Lock Function to Prevent Short-Circuit
• Shut-Down Input
• HVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Optimized for 15 kHz Switching Frequency
• Isolation Rating: 1500 Vrms / min.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9096 - Smart Power Module, Motion SPM® 55
Series User’s Guide
• AN-9097 - SPM® 55 Packing Mounting Guidance
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
Device Marking
Package
Packing Type
Quantity
FNF51560TD1
FNF51560TD1
SPMFA-A20
RAIL
13
©2015 Semiconductor
FNF51560TD1 Rev. 1.1
1
www.fairchildsemi.com
www.onsemi.com
FNF51560TD1 Motion SPM® 55 Series
April 2017
FNF51560TD1 Motion SPM® 55 Series
Integrated Power Functions
• 600 V - 15 A IGBT inverter for three phase DC / AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out (UVLO) protection
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out (UVLO) protection
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: High-active interface, works with 3.3 / 5 V logic, Schmitt trigger input
• Built in Bootstrap circuitry in HVIC
Pin Configuration
Figure 2. Top View
©2015 Semiconductor
FNF51560TD1 Rev. 1.1
2
www.fairchildsemi.com
www.onsemi.com
FNF51560TD1 Motion SPM® 55 Series
Pin Descriptions
Pin Number
Pin Name
Pin Description
1
P
2
U, VS(U)
Output for U Phase
3
V, VS(V)
Output for V Phase
4
W, VS(W)
Output for W Phase
5
NU
Negative DC-Link Input for U Phase
6
NV
Negative DC-Link Input for V Phase
7
NW
Negative DC-Link Input for W Phase
Positive DC-Link Input
8
IN(UL)
Signal Input for Low-Side U Phase
9
IN(UH)
Signal Input for High- ide U Phase
10
IN(VL)
Signal Input for Low-Side V Phase
11
IN(VH)
Signal Input for High-Side V Phase
12
IN(WL)
Signal Input for Low-Side W Phase
13
IN(WH)
Signal Input for High-Side W Phase
14
VDD
Common Bias Voltage for IC and IGBTs Driving
15
COM
Common Supply Ground
Capacitor (Low-Pass Filter) for Short-circuit Current Detection Input
16
CSC
17
VF
Fault Output, Shut-Down Input, Temperature Output of Drive IC
18
VB(W)
High-Side Bias Voltage for W-Phase IGBT Driving
19
VB(V)
High-Side Bias Voltage for V-Phase IGBT Driving
20
VB(U)
High-Side Bias Voltage for U-Phase IGBT Driving
©2015 Semiconductor
FNF51560TD1 Rev. 1.1
3
www.fairchildsemi.com
www.onsemi.com
FNF51560TD1 Motion SPM® 55 Series
Internal Equivalent Circuit and Input/Output Pins
P
V B(U)
IN(UH)
IN(UL)
VB
HIN
LIN
HO
VS
U,Vs (U)
LO
Nu
V B(V)
IN(VH)
IN(VL)
VB
HIN
LIN
HO
VS
V,Vs(V)
LO
V B(W)
IN(WH)
IN(WL)
Nv
VB
HIN
LIN
HO
VF
Csc
V DD
COM
VF
Csc
VDD
COM
VS
U,Vs(W)
LO
Nw
Figure 3. Internal Block Diagram
Note:
1. Inverter high-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT.
2. Inverter low-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions.
3. Single drive IC has gate driver for six IGBTs and protection functions.
4. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
©2015 Semiconductor
FNF51560TD1 Rev. 1.1
4
www.fairchildsemi.com
www.onsemi.com
unless otherwise specified.)
Inverter Part
Symbol
VPN
VPN(Surge)
Parameter
Conditions
Supply Voltage
Applied between P - NU, NV, NW
Supply Voltage (Surge)
Applied between P - NU, NV, NW
Rating
Unit
450
V
500
V
600
V
VCES
Collector - Emitter Voltage
* ± IC
Each IGBT Collector Current
TC = 25°C, TJ < 150°C
15
A
* ± ICP
Each IGBT Collector Current (Peak)
TC = 25°C, TJ < 150°C, Under 1 ms Pulse
Width
30
A
Collector Dissipation
TC = 25°C per Chip
22
W
Operating Junction Temperature
(Note 5)
-40 ~ 150
°C
Rating
Unit
* PC
TJ
Note:
5. The maximum junction temperature rating of the power chips integrated within the Motion SPM® 55 product is 150C.
Control Part
Symbol
Parameter
Conditions
VDD
Control Supply Voltage
Applied between VDD - COM
20
V
VBS
High-Side Control Bias Voltage
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20
V
VIN
Input Signal Voltage
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
-0.3 ~ VDD +0.3
V
-0.3 ~ VDD +0.3
V
5
mA
-0.3 ~ VDD +0.3
V
Rating
Unit
400
V
-40 ~ 125
°C
1500
Vrms
Typ. Max.
Unit
VF
Fault Supply Voltage
Applied between VF - COM
* IF
Fault Current
Sink Current at VF pin
VSC
Current Sensing Input Voltage
Applied between CSC - COM
Total System
Symbol
VPN(PROT)
Parameter
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
TSTG
Storage Temperature
VISO
Isolation Voltage
Connect Pins to Heat Sink Plate
Conditions
VDD = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 s
AC 60 Hz, Sinusoidal, 1 Minute
Thermal Resistance
Symbol
Rth(j-c)Q
Rth(j-c)F
Parameter
Junction to Case Thermal Resistance
(Note 7)
Conditions
Min.
Inverter IGBT part (per 1 / 6 module)
-
-
5.6
°C / W
Inverter FWD part (per 1 / 6 module)
-
-
6.9
°C / W
Note:
6. For Marking “ * “, These Value had been made an acquisition by the calculation considered to design factor.
7. For the measurement point of case temperature (TC), please refer to Figure 2.
©2015 Semiconductor
FNF51560TD1 Rev. 1.1
5
www.fairchildsemi.com
www.onsemi.com
FNF51560TD1 Motion SPM® 55 Series
Absolute Maximum Ratings (TJ = 25°C,
unless otherwise specified.)
Inverter Part
Symbol
VCE(SAT)
VF
HS
tON
Parameter
Conditions
Min.
Typ.
Max.
Unit
Collector - Emitter Saturation VDD = VBS = 15 V
Voltage
VIN = 5 V
IC = 10 A
TJ = 25°C
-
1.9
2.2
V
TJ = 150°C
-
2.4
-
V
FWDi Forward Voltage
TJ = 25°C
-
2.0
2.45
V
TJ = 150°C
-
1.9
-
V
0.40
0.60
0.80
us
-
0.20
0.30
us
-
0.50
0.70
us
-
0.10
0.20
us
VIN = 0 V
IF = 10 A
Switching Times
VPN = 400 V, VDD = VBS = 15 V, IC = 15A
TJ = 25°C
VIN = 0 V 5 V, Inductive load
(Note 8)
tC(ON)
tOFF
tC(OFF)
-
0.04
-
us
0.40
0.60
0.80
us
-
0.20
0.30
us
-
0.50
0.70
us
tC(OFF)
-
0.10
0.20
us
trr
-
0.04
-
us
-
-
1
mA
trr
LS
VPN = 400 V, VDD = VBS = 15 V, IC = 15A
TJ = 25°C
VIN = 0 V 5 V, Inductive load
(Note 8)
tON
tC(ON)
tOFF
Collector - Emitter Leakage VCE = VCES
Current
ICES
Note:
8. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
100% I C 100% I C
t rr
V CE
IC
IC
V IN
V IN
t ON
t OFF
t C(ON)
t C(OFF)
10% I C
V IN(ON)
V CE
90% I C
V IN(OFF)
10% V CE
10% V CE
10% I C
(b) turn-off
(a) turn-on
Figure 4. Switching Time Definition
©2015 Semiconductor
FNF51560TD1 Rev. 1.1
6
www.fairchildsemi.com
www.onsemi.com
FNF51560TD1 Motion SPM® 55 Series
Electrical Characteristics (TJ = 25°C,
Symbol
Parameter
Min.
Typ.
Max.
Unit
IQDD
Quiescent VDD Supply
Current
VDD = 15 V,
IN(UH,VH,WH,UL,VL,WL) = 0 V
VDD - COM
-
1.5
2.0
mA
IPDD
Operating VDD Supply
Current
VDD = 15 V, fPWM = 20 kHz, duty = VDD - COM
50%, applied to one PWM signal
input
-
1.8
2.5
mA
IQBS
Quiescent VBS Supply
Current
VBS = 15 V, IN(UH, VH, WH) = 0 V
VB(U) - VS(U), VB(V) VS(V), VB(W) - VS(W)
-
30
55
A
IPBS
Operating VBS Supply
Current
VDD = VBS = 15 V, fPWM = 20 kHz, VB(U) - VS(U), VB(V) duty = 50%, applied to one PWM VS(V), VB(W) - VS(W)
signal input for high - side
-
330
450
A
VFH
Fault Output Voltage
VSC = 0 V, VF Circuit: 10 k to 5 V Pull-up
4.5
-
-
V
VSC = 1 V, VF Circuit: 10 k to 5 V Pull-up
VFL
VSC(ref)
Short-Circuit Trip Level VDD = 15 V (Note 4)
UVDDD
UVDDR
UVBSD
Conditions
Supply Circuit
Under-Voltage
Protection
UVBSR
11.4
12.1
V
12.3
13.0
V
Detection level
10.1
10.8
11.5
V
Reset level
10.7
11.4
12.1
V
68
81
95
A
4.05
4.19
4.32
V
40
120
-
s
-
-
2.4
V
0.8
-
-
V
-
-
2.4
V
0.8
-
-
V
HVIC Temperature
Sensing Voltage
VDD = VBS = 15 V, THVIC = 25°C, 10 k to 5 V Pull-up
(Figure. 5)
VFSDD
Shut-down Detection
level
VIN(ON)
ON Threshold Voltage
VIN(OFF)
V
11.2
VFT
Shut-down Reset level
V
10.7
VDD = VBS = 15 V, THVIC = 25°C
Fault-Out Pulse Width
0.5
0.55
Detection level
HVIC Temperature
Sensing Current
tFOD
0.5
Reset level
IFT
VFSDR
0.45
Applied between VF - COM
Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL),
OFF Threshold Voltage IN(WL) - COM
Note:
9. Short-circuit protection is functioning for all six IGBTs.
5.0
4.5
4.0
VF [V]
3.5
3.0
2.5
2.0
1.5
1.0
0
25
50
75
100
125
O
THVIC [ C]
Figure. 5. V-T Curve of Temperature Output of IC (5V pull-up with 10kohm)
©2015 Semiconductor
FNF51560TD1 Rev. 1.1
7
www.fairchildsemi.com
www.onsemi.com
FNF51560TD1 Motion SPM® 55 Series
Control Part
Symbol
RBS
Parameter
Conditions
Bootstrap Diode
Resitance
Min.
Typ.
Max.
Unit
-
280
-
Min.
Typ.
Max.
Unit
VDD = 15V, TJ = 25°C
0.06
0.05
IF [A]
0.04
0.03
0.02
0.01
o
T J =25 C, V DD=15V
0.00
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
V F [V]
Figure 6. Built-In Bootstrap Diode Charaterstics
Recommended Operating Conditions
Symbol
Parameter
Conditions
VPN
Supply Voltage
Applied between P - NU, NV, NW
-
300
400
V
VDD
Control Supply Voltage
Applied between VDD - COM
14.0
15
16.5
V
VBS
High - Side Bias Voltage
Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) VS(W)
13.0
15
18.5
V
-1
-
1
V / s
0.5
-
-
s
-
20
kHz
4
V
s
dVDD / dt, Control Supply Variation
dVBS / dt
tdead
Blanking Time for
Preventing Arm - Short
For each input signal
fPWM
PWM Input Signal
- 40C <TJ <150°C
-
VSEN
Voltage for Current
Sensing
Applied between NU, NV, NW - COM
(Including surge voltage)
-4
Minimun Input Pulse
Width
(Note 10)
0.7
-
-
0.7
-
-
PWIN(ON)
PWIN(OFF)
Note:
10. This product might not make response if input pulse width is less than the recommanded value.
5 V L in e (M C U o r C o n tro l p o w e r)
R PF = 10kΩ
SPM
IN (U H ) , IN (V H ) , IN (W H )
IN (U L ) , IN ( V L ) , IN (W L )
MCU
V
F
COM
Note:
11. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s
printed circuit board. The input signal section of the SPM 55 product integrates 10 k(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay
attention to the signal voltage drop at input terminal.
Figure 7. Recommended MCU I/O Interface Circuit
©2015 Semiconductor
FNF51560TD1 Rev. 1.1
8
www.fairchildsemi.com
www.onsemi.com
FNF51560TD1 Motion SPM® 55 Series
Bootstrap Diode Part
Parameter
Device Flatness
Mounting Torque
Conditions
See Figure 8
Min.
Typ.
Max.
Unit
-50
-
100
m
Mounting Screw: - M3
Recommended 0.7 N • m
0.6
0.7
0.8
N•m
Note Figure 9
Recommended 7.1 kg • cm
5.9
6.9
7.9
kg • cm
-
6.0
-
g
Weight
Figure 8. Flatness Measurement Position
Figure 9. Mounting Screws Torque Order
Note:
12. Do not make over torque when mounting screws. Much mounting torque may cause package cracks, as well as bolts and Al heat-sink destruction.
13. Avoid one side tightening stress. Figure 11 shows the recommended torque order for mounting screws. Uneven mounting can cause the ceramic substrate of the Motion SPM
55 product to be damaged. The Pre-screwing torque is set to 20 ~ 30 % of maximum torque rating.
©2015 Semiconductor
FNF51560TD1 Rev. 1.1
9
www.fairchildsemi.com
www.onsemi.com
FNF51560TD1 Motion SPM® 55 Series
Mechanical Characteristics and Ratings
FNF51560TD1 Motion SPM® 55 Series
Time Charts of Protective Function
Input Signal
Protection
Circuit State
RESET
SET
RESET
UVDDR
a1
Control
Supply Voltage
a6
UVDDD
a3
a2
a7
a4
Output Current
a5
Fault Output Signal
a1 : Control supply voltage rises: After the voltage rises UVDDR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVDDD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under voltage reset (UVDDR).
a7 : Normal operation: IGBT ON and carrying current.
Figure 10. Under-Voltage Protection (Low-Side)
Input Signal
Protection
Circuit State
RESET
SET
RESET
UVBSR
Control
Supply Voltage
b5
b1
UVBSD
b3
b6
b2
b4
Output Current
High-level (no fault output)
Fault Output Signal
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR)
b6 : Normal operation: IGBT ON and carrying current
Figure 11. Under-Voltage Protection (High-Side)
©2015 Semiconductor
FNF51560TD1 Rev. 1.1
10
www.fairchildsemi.com
www.onsemi.com
Lin
d3
d4
d5
Ho
d1
Hin : High-side Input Signal
Lin : Low-side Input Signal
Ho : High-side IGBT Gate Voltage
Lo : Low-side IGBT Gate Voltage
/Fo : Fault Output
d2
Lo
/Fo
d1 : High Side First - Input - First - Output Mode
d2 : Low Side Noise Mode : No Lo
d3 : High Side Noise Mode : No Ho
d4 : Low Side First - Input - First - Output Mode
d5 : In - Phase Mode : No Ho
Figure 12. Inter-Lock Function
H IN
L IN
HO
S m a rt T u rn - o ff
S o ft O ff
A c t iv a t e d b y n e x t
in p u t a f t e r f a u lt c le a r
LO
CSC
O v e r- C u rre n t
D e t e c t io n
N o O u tp u t
VF
HIN : High-side Input Signal
LIN : Low-side Input Signal
HO : High-Side Output Signal
LO : Low-Side Output Signal
CSC : Over Current Detection Input
VF : Fault Out Function
Figure 13. Fault-Out Function By Over Current Protection
©2015 Semiconductor
FNF51560TD1 Rev. 1.1
11
www.fairchildsemi.com
www.onsemi.com
FNF51560TD1 Motion SPM® 55 Series
Hin
L IN
N o O u tp u t
HO
A c tiv a te d b y
n e x t in p u t a f te r
f a u lt c la e a r
S m a rt
T u rn - o ff
S o ft O ff
LO
CSC
VF
E x te r n a l
s h u td o w n in p u t
HIN : High-side Input Signal
LIN : Low-side Input Signal
HO : High-Side Output Signal
LO : Low-Side Output Signal
CSC : Over Current Detection Input
VF : Shutdown Input Function
Figure 14. Shutdown Input Function By External Command
©2015 Semiconductor
FNF51560TD1 Rev. 1.1
12
www.fairchildsemi.com
www.onsemi.com
FNF51560TD1 Motion SPM® 55 Series
H IN
RS
(9) IN(UH)
Gating UH
(19) VB(V)
CBS
(11) IN(VH)
Gating VH
(18) VB(W)
M
C
U
OUT(UH)
IN(UH)
IN(VH)
OUT(VH)
VS(V)
V (3)
M
VB(W)
CBSC
RS
(13) IN(WH)
Gating WH
IN(WH)
(14) VDD
15V line
CPS
U (2)
VS(U)
VB(V)
CBSC
RS
CBS
P (1)
VB(U)
CBSC
CPS
CPS
CSP15
CSPC15
CDCS
OUT(WH)
VS(W)
(15) COM
VDC
VDD
W (4)
COM
5V line
OUT(UL)
RPF
NU (5)
CSPC05 CSP05
RS
(17) VF
Fault
CBPF
CPF
RS
(8) IN(UL)
RS
(10) IN(VL)
Gating UL
Gating VL
RSU
VF
RS
(12) IN(WL)
Gating WL
CSC
RF
Input Signal for
Short-Circuit Protection
NV (6)
RSV
IN(VL)
IN(WL)
OUT(WL)
(16) CSC
CPS CPS CPS
OUT(VL)
IN(UL)
CSC
NW (7)
RSW
U-Phase Current
V-Phase Current
W-Phase Current
Temp. Monitoring
Note:
1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2 ~ 3 cm)
2) By virtue of integrating an application specific type of HVIC inside the SPM® 55 product, direct coupling to MCU terminals without any opto-coupler or transformer isolation is
possible.
3) VF is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 5 mA. Please refer to Figure 15.
4) CSP15 of around seven times larger than bootstrap capacitor CBS is recommended.
5) Input signal is active-HIGH type. There is a 10 k resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of
input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns. (Recommended RS = 100 Ω , CPS = 1 nF)
6) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.
7) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2 s.
8) The connection between control GND line and power GND line which includes the NU, NV, NW must be connected to only one point. Please do not connect the control GND
to the power GND by the broad pattern. Also, the wiring distance between control GND and power GND should be as short as possible.
9) Each capacitor should be mounted as close to the pins of the Motion SPM 55 product as possible.
10) To prevent surge destruction, the wiring between the smoothing capacitor and the P and GND pins should be as short as possible. The use of a high frequency non-inductive
capacitor of around 0.1 ~ 0.22 F between the P and GND pins is recommended.
11) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.
12) The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals.
(Recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 Ω )
13) Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1 ~ 0.2 F R-category ceramic capacitors with good temperature and
frequency characteristics in CBSC.
14) For the detailed information, please refer to the application notes.
Figur15. Typical Application Circuit
©2015 Semiconductor
FNF51560TD1 Rev. 1.1
13
www.fairchildsemi.com
www.onsemi.com
FNF51560TD1 Motion SPM® 55 Series
(20) VB(U)
CBS
FNF51560TD1 Motion SPM® 55 Series
Detailed Package Outline Drawings (FNF51560TD1, Short Lead)
©2015 Semiconductor
FNF51560TD1 Rev. 1.1
14
www.fairchildsemi.com
www.onsemi.com
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the
United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A
listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make
changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and
all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for
use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or
any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
©2015 Semiconductor
N. American Technical Support: 800-282-9855 Toll Free
USA/Canada.
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81-3-5817-1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.fairchildsemi.com
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com