FOD3120SD

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FOD3120 High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Features Description • High Noise Immunity Characterized by 35 kV/μs Minimum Common Mode Rejection • 2.5 A Peak Output Current Driving Capability for Most 1200 V/20 A IGBT • Use of P-channel MOSFETs at Output Stage Enables Output Voltage Swing Close to The Supply Rail • Wide Supply Voltage Range from 15 V to 30 V • Fast Switching Speed – 400 ns max. Propagation Delay – 100 ns max. Pulse Width Distortion • Under Voltage LockOut (UVLO) with Hysteresis • Extended Industrial Temperate Range, -40°C to 100°C Temperature Range • Safety and Regulatory Approved – UL1577, 5000 VRMS for 1 min. – DIN EN/IEC60747-5-5 • RDS(ON) of 1 Ω (typ.) Offers Lower Power Dissipation • >8.0 mm Clearance and Creepage Distance (Option ‘T’ or ‘TS’) • 1,414 V Peak Working Insulation Voltage (VIORM) The FOD3120 is a 2.5 A Output Current Gate Drive Optocoupler, capable of driving most medium power IGBT/MOSFET. It is ideally suited for fast switching driving of power IGBT and MOSFETs used in motor control inverter applications, and high performance power system. It utilizes Fairchild’s coplanar packaging technology, Optoplanar®, and optimized IC design to achieve high noise immunity, characterized by high common mode rejection. It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage. Related Resources • FOD3150, 1 A Output Current, Gate Drive Optocoupler Datasheet • www.fairchildsemi.com/products/optoelectronics/ Applications • • • • Industrial Inverter Uninterruptible Power Supply Induction Heating Isolated IGBT/Power MOSFET Gate Drive Functional Block Diagram Package Outlines NC 1 8 VDD ANODE 2 7 VO2 CATHODE 3 6 VO1 NC 4 5 VSS 8 Figure 1. Functional Block Diagram(1) 8 1 1 8 8 1 1 Figure 2. Package Outlines Note: 1. 0.1 μF bypass capacitor must be connected between pins 5 and 8. ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 www.fairchildsemi.com FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler February 2016 LED VDD – VSS “Positive Going” (Turn-on) VDD – VSS “Negative Going” (Turn-off) VO Off 0 V to 30 V 0 V to 30 V Low On 0 V to 11.5 V 0 V to 10 V Low On 11.5 V to 13.5 V 10 V to 12 V Transition On 13.5 V to 30 V 12 V to 30 V High Pin Definitions Pin # Name Description 1 NC 2 Anode Not Connected 3 Cathode 4 NC Not Connected LED Anode LED Cathode 5 VSS Negative Supply Voltage 6 VO2 Output Voltage 2 (internally connected to VO1) 7 VO1 Output Voltage 1 8 VDD Positive Supply Voltage ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 www.fairchildsemi.com 2 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Truth Table As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I–IV < 300 VRMS I–IV < 450 VRMS I–III < 600 VRMS I–III < 1000 VRMS (Option T, TS) I–III Climatic Classification 40/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 2,262 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 2,651 Vpeak VIORM Maximum Working Insulation Voltage 1,414 Vpeak VIOTM Highest Allowable Over-Voltage 6,000 Vpeak External Creepage ≥ 8.0 mm External Clearance ≥ 7.4 mm ≥ 10.16 mm ≥ 0.5 mm VPR Parameter External Clearance (for Option T or TS, 0.4" Lead Spacing) DTI TS IS,INPUT PS,OUTPUT RIO Distance Through Insulation (Insulation Thickness) (2) Case Temperature 175 °C Input Current(2) 400 mA 700 mW Output Power (Duty Factor ≤ 2.7%)(2) Insulation Resistance at TS, VIO = 500 V (2) 9 > 10 Ω Note: 2. Safety limit value - maximum values allowed in the event of a failure. ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 www.fairchildsemi.com 3 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Value Unit TSTG Storage Temperature -55 to +125 ºC TOPR Operating Temperature -40 to +100 ºC Junction Temperature -40 to +125 ºC 260 for 10sec ºC 25 mA 1 A 50 kHz 5 V 3.0 A TJ TSOL IF(AVG) IF(PEAK) Parameter Lead Wave Solder Temperature (refer to page 21 for reflow solder profile) Average Input Current Peak Transient Forward Current (4) f Operating Frequency VR Reverse Input Voltage IO(PEAK) VDD – VSS VO(PEAK) tR(IN), tF(IN) PDI PDO Peak Output (3) Current(5) 0 to 35 Supply Voltage TA ≥ 90°C Peak Output Voltage Input Signal Rise and Fall Time Input Power Dissipation(6)(8) Output Power Dissipation(7)(8) 0 to 30 V 0 to VDD V 500 ns 45 mW 250 mW Notes: 3. Pulse Width, PW ≤ 1 μs, 300 pps 4. Exponential Waveform, IO(PEAK) ≤ | 2.5 A | (≤ 0.3 μs) 5. 6. 7. 8. Maximum pulse width = 10 μs, maximum duty cycle = 1.1% Derate linearly above 87°C, free air temperature at a rate of 0.77 mW/°C No derating required across temperature range. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Value Unit -40 to +100 °C Power Supply 15 to 30 V IF(ON) Input Current (ON) 7 to 16 mA VF(OFF) Input Voltage (OFF) 0 to 0.8 V TA VDD – VSS Parameter Ambient Operating Temperature ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 www.fairchildsemi.com 4 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Absolute Maximum Ratings (TA = 25ºC unless otherwise specified) Apply over all recommended conditions, typical value is measured at TA = 25ºC Symbol Parameter Conditions Min. VISO Input-Output Isolation Voltage TA = 25ºC, R.H.< 50%, t = 1.0min, II-O ≤ 10 μA, 50 Hz(9)(10) RISO Isolation Resistance VI-O = 500 V(9) CISO Isolation Capacitance Typ. Max. 5,000 Unit VRMS 1011 Ω 1 pF (9) VI-O = 0 V, Freq = 1.0 MHz Notes: 9. Device is considered a two terminal device: Pins 2 and 3 are shorted together and Pins 5, 6, 7 and 8 are shorted together. 10. 5,000 VRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second duration. Electrical Characteristics Apply over all recommended conditions, typical value is measured at VDD = 30 V, VSS = Ground, TA = 25°C unless otherwise specified. Symbol VF Δ(VF / TA) Parameter Input Forward Voltage Conditions IF = 10 mA Min. Typ. Max. Unit 1.2 1.5 1.8 V Temperature Coefficient of Forward Voltage -1.8 mV/ºC BVR Input Reverse Breakdown IR = 10 μA Voltage CIN Input Capacitance f = 1 MHz, VF = 0V IOH High Level Output Current(4) VO = VDD – 3 V -1.0 VO = VDD – 6 V -2.0 IOL Low Level Output Current(4) VO = VSS + 3 V 1.0 VO = VSS + 6 V 2.0 VOH High Level Output Voltage VOL Low Level Output Voltage IDDH High Level Supply Current VO = Open, IF = 7 to 16 mA 2.8 3.8 mA IDDL Low Level Supply Current VO = Open, VF = 0 to 0.8 V 2.8 3.8 mA IFLH Threshold Input Current Low to High IO = 0 mA, VO > 5 V 2.3 5.0 mA VFHL Threshold Input Voltage High to Low IO = 0 mA, VO < 5 V 0.8 IF = 10 mA, VO > 5 V 11.5 12.7 13.5 V IF = 10 mA, VO < 5 V 10.0 11.2 12.0 V VUVLO+ VUVLO– Under Voltage Lockout Threshold UVLOHYS Under Voltage Lockout Threshold Hysteresis ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 5 IF = 10 mA, IO = -2.5 A V 60 -2.0 pF -2.5 -2.5 2.0 2.5 A A 2.5 VDD – 6.25 V VDD – 2.5 V V IF = 10 mA, IO = -100 mA VDD – 0.25 V VDD – 0.1 V IF = 0 mA, IO = 2.5 A VSS + 2.5 V VSS + 6.25 V IF = 0 mA, IO = 100 mA VSS + 0.1 V VSS + 0.25 V V V 1.5 V www.fairchildsemi.com 5 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Isolation Characteristics Apply over all recommended conditions, typical value is measured at VDD = 30 V, VSS = Ground, TA = 25°C unless otherwise specified. Symbol Parameter tPHL Min. Typ. Max. Unit Propagation Delay Time to Logic Low Output 150 275 400 ns tPLH Propagation Delay Time to Logic High Output 150 255 400 ns PWD Pulse Width Distortion, | tPHL – tPLH | 20 100 ns 250 ns PDD (Skew) Propagation Delay Difference Between Any Two Parts or Channels, (tPHL – tPLH)(11) Conditions IF = 7 mA to 16 mA, Rg = 10 Ω , Cg =10 nF, f = 10 kHz, Duty Cycle = 50% -250 tR Output Rise Time (10% – 90%) 60 ns tF Output Fall Time (90% – 10%) 60 ns tUVLO ON UVLO Turn On Delay IF = 10 mA, VO > 5 V 1.6 μs tUVLO OFF UVLO Turn Off Delay IF = 10 mA, VO < 5 V 0.4 μs | CMH | Common Mode Transient Immunity at Output High TA = 25°C, VDD = 30 V, IF = 7 to 16 mA, VCM = 2000 V(12) 35 50 kV/μs | CML | Common Mode Transient Immunity at Output Low TA = 25°C, VDD = 30 V, VF = 0 V, VCM = 2000 V(13) 35 50 kV/μs Notes: 11. The difference between tPHL and tPLH between any two FOD3120 parts under same test conditions. 12. Common mode transient immunity at output high is the maximum tolerable negative dVcm/dt on the trailing edge of the common mode impulse signal, Vcm, to assure that the output will remain high (i.e. VO > 15.0 V). 13. Common mode transient immunity at output low is the maximum tolerable positive dVcm/dt on the leading edge of the common pulse signal, Vcm, to assure that the output will remain low (i.e. VO < 1.0 V). ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 www.fairchildsemi.com 6 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Switching Characteristics Frequency = 250Hz Duty C ycle = 0.1% IF = 7 to 16mA 0.0 VD D = 1 5 to 30V VS S = 0V -0.5 TA = -40°C -1.0 -1.5 T A = 25°C TA = 100 °C -2.0 -2.5 -3.0 0. 0 0.5 1.0 1.5 2.0 2.5 (VOH- VDD) - HIGH OUTPUT VOLTAGE DROP (V) (VOH - VDD) - OUTPUT HIGH VOLTAGE DROP (V) 0.5 0.00 VD D = 15V to 30V VSS = 0V IF = 7mA to 16mA IO = -100mA -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 -40 -20 0 IOH - OUTPUT HIGH CURRENT (A) I OH – OUTPUT HIGH CURRENT (A) IOH – OUTPUT HIGH CURRENT (A) 5 f = 200 Hz DUTY CYCLE = 0.2% IF = 7 to 16mA R g = 5Ω to GND 6 VDD = 30V 4 VDD = 15V 2 0 -4 0 -2 0 0 20 40 60 80 4 3 2 VDD = 15V 1 -20 20 40 60 80 100 Fig. 6 Output High Current vs. Ambient Temperature V OL - OUTPUT LOW VOLTAGE (V) V OL - OUTPUT LOW VOLTAGE (V) 0 TA – AMBIENT TEMPERATURE (°C) 0.25 T A = 100°C TA = 25°C 2 0 0.0 100 VDD = 30V 0 -4 0 10 0 Frequency = 250Hz Duty Cycle = 99.9% V F( OFF) = -3.0V to 0.8V V DD = 15V to 30V V SS = 0V TA = -40°C 1 80 R g = 10Ω to GND Fig. 5 Output High Current vs. Ambient Temperature 3 60 f = 10 0 Hz DUTY CYCLE = 0.5% IF = 7 t o 16mA TA – AMBIENT TEMPERATURE (°C) 4 40 Fig. 4 Output High Voltage Drop vs. Ambient Temperature Fig. 3 Output High Voltage Drop vs. Output High Current 8 20 T A - AMBIENT TEMPERATURE (°C) V DD = 15V to 30V V SS = 0V VF(OFF) = -3V to 0.8V I O = 100mA 0.20 0.15 0.10 0.05 0.00 0.5 1.0 1.5 2.0 -40 2.5 0 20 40 60 80 100 Fig. 8 Output Low Voltage vs. Ambient Temperature Fig. 7 Output Low Voltage vs. Output Low Current ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 -20 TA - AMBIENT TEMPERATURE (°C) IO L - OUTPUT LOW CURRENT (A) www.fairchildsemi.com 7 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Typical Performance Characteristics 8 5 f = 200 Hz f = 10 0 Hz DUTY CYCLE = 99.5 % IF = 7 t o 16mA IOL – OUTPUT LOW CURRENT (A) IO L – OUTPUT LOW CU RRENT (A) D UTY CYCLE = 99.8% IF = 7 to 16mA 6 R g = 5Ω to V DD V DD = 30V 4 V DD = 15V 2 0 -40 R g = 10Ω to VDD 4 3 VDD = 30V 2 VDD = 15V 1 0 -4 0 -20 0 20 40 60 80 -20 0 100 T – AMBIENT TEMPERATURE (°C) IDD - SUPPLY CURR ENT (mA) IDD - SUPPLY CURR ENT (mA) 60 80 100 3.6 VDD = 30V VSS = 0V I F = 0m A (for I DDL) I F = 10mA (for IDDH) 3.4 40 Fig. 10 Output Low Current vs. Ambient Temperature Fig. 9 Output Low Current vs. Ambient Temperature 3.6 20 TA – AMBIENT TEMPERATURE (°C) 3.2 3.0 I DDH 2.8 I DDL 2.6 I F = 10mA (for IDDH) I F = 0m A (for I DDL) VSS = 0 , TA =25°C 3.2 2.8 I DDH I DDL 2.4 2.4 2.0 2.2 -40 -20 0 20 40 60 80 100 15 20 T A - AMBIENT TEMPEATURE (°C) 400 4.0 V DD= 15V to 30V V SS = 0V Output = Open 3.0 2.5 P 2.0 1.5 -20 0 20 40 60 80 100 Rg = 1 0Ω, Cg = 10 nF DUTY CYCLE = 50% f = 10 kHz 300 tP HL 250 tPLH 200 150 18 21 24 27 30 VD D – SUPPLY VOLTAGE (V) T A - AMBIENT TE MPERATURE (°C) Fig. 14 Propagation Delay vs. Supply Voltage Fig. 13 Low to High Input Current Threshold vs. Ambient Temperature ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 350 IF = 10mA T A = 25 °C 100 15 1.0 -40 30 Fig. 12 Supply Current vs. Supply Voltage t - PROPAGATOIN DELAY (ns) IFLH - LOW TO HIGH CURRENT THRESHOLD (mA) Fig. 11 Supply Current vs. Ambient Temperature 3.5 25 V - SUPPLY VOLTAGE (V) www.fairchildsemi.com 8 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Typical Performance Characteristics (Continued) 500 VDD = 30 V, VSS = 0V Rg = 10Ω, Cg = 1 0nF T A = 25°C DUTY CYCLE = 50% f = 10 kHz 400 300 t –PROPOGATION DELAY (ns) t –PROPOGATION DELAY (ns) 500 tPHL tPLH 400 300 tPH L tPLH 200 P P 200 IF = 10mA VDD = 30V , VSS = 0V Rg = 10Ω, Cg = 1 0nF DUTY CYCLE = 50% f = 10 kHz 100 -4 0 100 6 10 12 14 16 0 20 40 60 80 TA – AMBIENT TEMPERATURE (°C) Fig. 15 Propagation Delay vs. LED Forward Current Fig. 16 Propagation Delay vs. Ambient Temperature 500 IF = 10mA VDD = 30V , VSS = 0V Cg = 10nF T A = 25°C DUTY CYCLE = 50% f = 10 kHz 1 00 IF = 10mA VDD = 30 V, VSS = 0V t –PROPOGATION DELAY (ns) 400 -2 0 I F – FORWARD LED CURRENT (mA) 300 tPHL tPLH Rg = 10Ω T A = 25°C 400 DUTY CYCLE = 50% f = 10 kHz 300 tPHL tPLH 200 P 200 P t –PROPOGATION DELAY (ns) 500 8 100 0 10 20 30 40 100 50 0 20 Fig. 17 Propagation Delay vs. Sereies Load Resistance 35 40 60 80 100 C g - L OAD CA PACITA NCE (n F) R g - SE RIES LO AD RESISTANCE (Ω) Fig. 18 Propagation Delay vs. Load Capacitance 100 T = 25°C VA = 30V DD IF - F ORWARD CURRENT (mA) O V – OUTPUT VOLTAGE (V) 30 25 20 15 10 10 TA = 100°C 1 TA = -40°C 0.1 TA = 25°C 0. 01 5 0.001 0.6 0 0 1 2 3 4 5 1.0 1.2 1.4 1.6 1.8 V F - FORWARD VOLTAGE (V) IF – FOR WA RD LE D CURR EN T ( mA ) Fig. 20 Input Forward Current vs. Forward Voltage Fig. 19 Transfer Characteristics ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 0.8 www.fairchildsemi.com 9 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Typical Performance Characteristics (Continued) FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Typical Performance Characteristics (Continued) 14 (12.7 5, 12.80) 12 VO – OUTPUTVOLTAGE (V) (11.25, 11.30) 10 8 6 4 2 (11.20 , 0 .00) (12.70, 0.00) 0 0 5 10 15 20 (VD D - VSS) – SU PPLY VOLTAGE (V) Fig. 21 Under Voltage Lockout ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 www.fairchildsemi.com 10 Power Supply + C1 0.1 μF + VDD = 15 V to 30 V C2 47 μF Pulse Generator PW = 4.99 ms Period = 5 ms ROUT = 50 Ω 1 8 2 7 Pulse-In Iol R2 100 Ω Power Supply 6 3 + D1 VOL LED-IFmon C3 0.1 μF + V=6V C4 47 μF 5 4 R1 100 Ω To Scope Test Conditions: Frequency = 200 Hz Duty Cycle = 99.8% VDD = 15 V to 30 V VSS = 0 V VF(OFF) = -3.0 V to 0.8 V Figure 22. IOL Test Circuit Power Supply + + C1 0.1 μF VDD = 15 V to 30 V C2 47 μF Pulse Generator PW = 10 μs Period = 5 ms ROUT = 50 Ω 1 8 2 7 Pulse-In R2 100 Ω + + C3 0.1 μF Ioh 3 VOH 4 Power Supply V=6V – 6 LED-IFmon C4 47 μF 5 D1 Current Probe To Scope R1 100 Ω Test Conditions: Frequency = 200 Hz Duty Cycle = 0.2% VDD = 15 V to 30 V VSS = 0 V IF = 7 mA to 16 mA Figure 23. IOH Test Circuit ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 www.fairchildsemi.com 11 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Test Circuit 1 8 2 7 0.1 μF + – IF = 7 to 16 mA VO 6 3 VDD = 15 to 30 V 100 mA 4 5 Figure 24. VOH Test Circuit 1 8 2 7 100 mA 3 6 4 5 0.1 μF + – VDD = 15 to 30 V VO Figure 25. VOL Test Circuit ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 www.fairchildsemi.com 12 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Test Circuit (Continued) FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Test Circuit (Continued) 1 8 2 7 0.1 μF IF = 7 to 16 mA 3 6 4 5 + – VDD = 30 V + – VDD = 30 V VO Figure 26. IDDH Test Circuit + – 1 8 2 7 3 6 4 5 0.1 μF VF = -0.3 to 0.8 V VO Figure 27. IDDL Test Circuit ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 www.fairchildsemi.com 13 IF 1 8 2 7 3 6 4 5 0.1 μF + – VDD = 15 to 30 V + – VDD = 15 to 30 V VO > 5 V Figure 28. IFLH Test Circuit + – 1 8 2 7 3 6 4 5 0.1 μF VF = –0.3 to 0.8 V VO Figure 29. VFHL Test Circuit 1 8 2 7 0.1 μF + – IF = 10 mA 3 6 4 5 VO = 5 V 15 V or 30 V VDD Ramp Figure 30. UVLO Test Circuit ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 www.fairchildsemi.com 14 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Test Circuit (Continued) 1 8 2 7 0.1 μF + – 3 Probe F = 10 kHz DC = 50% VO + – VDD = 15 to 30 V Rg = 10 Ω 6 Cg = 10 nF 50 Ω 4 5 IF tr tf 90% 50% VOUT 10% tPLH tPHL Figure 31. tPHL, tPLH, tR and tF Test Circuit and Waveforms IF 1 8 2 7 A B 5V + – 3 6 4 5 0.1 μF + – VDD = 30 V VO +– VCM = 2,000 V VCM 0V Δt VOH VO Switch at A: IF = 10 mA VO VOL Switch at B: IF = 0 mA Figure 32. CMR Test Circuit and Waveforms ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 www.fairchildsemi.com 15 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Test Circuit (Continued) FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Reflow Profile Temperature (°C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25°C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max. Time 25°C to Peak Temperature ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 8 minutes max. www.fairchildsemi.com 16 Part Number FOD3120 Package Packing Method DIP 8-Pin Tube (50 units per tube) FOD3120S SMT 8-Pin (Lead Bend) Tube (50 units per tube) FOD3120SD SMT 8-Pin (Lead Bend) Tape and Reel (1,000 units per reel) FOD3120V DIP 8-Pin, DIN_EN/IEC60747-5-5 option Tube (50 units per tube) FOD3120SV SMT 8-Pin (Lead Bend), DIN_EN/IEC60747-5-5 option Tube (50 units per tube) FOD3120SDV SMT 8-Pin (Lead Bend), DIN_EN/IEC60747-5-5 option Tape and Reel (1,000 units per reel) FOD3120TV DIP 8-Pin, 0.4” Lead Spacing, DIN_EN/IEC60747-5-5 option Tube (50 units per tube) FOD3120TSV SMT 8-Pin, 0.4” Lead Spacing, DIN_EN/IEC60747-5-5 option FOD3120TSR2V SMT 8-Pin, 0.4” Lead Spacing, DIN_EN/IEC60747-5-5 option Tube (50 units per tube) Tape and Reel (700 units per reel) Marking Information 1 3120 V XX YY B 3 2 6 5 4 Figure 33. Top Mark Definitions ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 1 Fairchild logo 2 Device number 3 DIN_EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 Two digit year code, e.g., ‘16’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code www.fairchildsemi.com 17 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Ordering Information D0 P0 t K0 P2 E F A0 W1 d t P User Direction of Feed Symbol W W B0 Description D1 Dimension in mm Tape Width 16.0 ± 0.3 Tape Thickness 0.30 ± 0.05 P0 Sprocket Hole Pitch 4.0 ± 0.1 D0 Sprocket Hole Diameter 1.55 ± 0.05 E Sprocket Hole Location 1.75 ± 0.10 F Pocket Location 7.5 ± 0.1 2.0 ± 0.1 P2 P Pocket Pitch A0 Pocket Dimensions 12.0 ± 0.1 10.30 ±0.20 B0 10.30 ±0.20 K0 4.90 ±0.20 W1 d R ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 Cover Tape Width 13.2 ± 0.2 Cover Tape Thickness 0.1 max Max. Component Rotation or Tilt 10° Min. Bending Radius 30 www.fairchildsemi.com 18 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Carrier Tape Specifications (Option SD) D0 P0 t K0 P2 E F A0 W1 d P User Direction of Feed Symbol W W B0 Description D1 Dimension in mm Tape Width 24.0 ± 0.3 Tape Thickness 0.40 ± 0.1 P0 Sprocket Hole Pitch 4.0 ± 0.1 D0 Sprocket Hole Diameter 1.55 ± 0.05 E Sprocket Hole Location 1.75 ± 0.10 F Pocket Location t 11.5 ± 0.1 2.0 ± 0.1 P2 P Pocket Pitch 16.0 ± 0.1 A0 Pocket Dimensions 12.80 ± 0.1 B0 10.35 ± 0.1 K0 5.7 ±0.1 W1 d R ©2003 Fairchild Semiconductor Corporation FOD3120 Rev. 1.4 Cover Tape Width 21.0 ± 0.1 Cover Tape Thickness 0.1 max Max. Component Rotation or Tilt 10° Min. Bending Radius 30 www.fairchildsemi.com 19 FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler Carrier Tape Specifications (Option TSR2) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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