DATA SHEET
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Gate Drive Optocoupler,
High Noise Immunity,
2.5 A Output Current
8
Description
8
The FOD3120 is a 2.5 A Output Current Gate Drive Optocoupler,
capable of driving most medium power IGBT/MOSFET. It is ideally
suited for fast switching driving of power IGBT and MOSFETs used
in motor control inverter applications, and high performance power
system.
I t u t i l i z e s o n s e m i ’s c o p l a n a r p a c k a g i n g t e c h n o l o g y,
OPTOPLANAR®, and optimized IC design to achieve high noise
immunity, characterized by high common mode rejection.
It consists of a gallium aluminum arsenide (AlGaAs) light emitting
diode optically coupled to an integrated circuit with a high−speed
driver for push−pull MOSFET output stage.
Features
• High Noise Immunity Characterized by 35 kV/ms
•
•
•
•
•
•
•
•
•
•
1
PDIP8 GW
CASE 709AC
FOD3120
•
8
1
Minimum Common Mode Rejection
2.5 A Peak Output Current Driving Capability
for Most 1200 V/20 A IGBT
Use of P−Channel MOSFETs at Output Stage Enables Output
Voltage Swing Close to the Supply Rail
Wide Supply Voltage Range from 15 V to 30 V
Fast Switching Speed
♦ 400 ns maximum Propagation Delay
♦ 100 ns maximum Pulse Width Distortion
Under Voltage LockOut (UVLO) with Hysteresis
Extended Industrial Temperate Range,
−40°C to 100°C Temperature Range
Safety and Regulatory Approvals
♦ UL1577, 5000 VRMS for 1 min.
♦ DIN EN/IEC60747−5−5
RDS(ON) of 1 W (typ.) Offers Lower Power Dissipation
>8.0 mm Clearance and Creepage Distance (Option ‘T’ or ‘TS’)
1414 V Peak Working Insulation Voltage (VIORM)
This is a Pb−Free Device
PDIP8 9.655x6.6, 2.54P
CASE 646CQ
8
1
1
PDIP8 GW
CASE 709AD
PDIP8 6.6x3.81, 2.54P
CASE 646BW
MARKING DIAGRAM
3120
VXXYYB
3120 = Device Number
V
= DIN_EN/IEC60747−5−5 Option (only
appears on component ordered with this option)
XX
= Two Digit Year Code
YY
= Two Digit Work Week
B
= Assembly Package Code
FUNCTIONAL BLOCK DIAGRAM
NC 1
8 VDD
ANODE 2
7 VO2
CATHODE 3
6 VO1
NC 4
5
VSS
Note: A 0.1 mF bypass capacitor must be
connected between pins 5 and 8.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 14 of this data sheet.
Applications
•
•
•
•
Industrial Inverter
Uninterruptible Power Supply
Induction Heating
Isolated IGBT/Power MOSFET Gate Drive
Related Resources
• FOD3150, 1 A Output Current, Gate Drive Optocoupler Datasheet
• https://www.onsemi.com/products/optoelectronics/
© Semiconductor Components Industries, LLC, 2003
August, 2021 − Rev. 3
1
Publication Order Number:
FOD3120/D
FOD3120
Table 1. TRUTH TABLE
LED
VDD – VSS “Positive Going” (Turn−on)
VDD – VSS “Negative Going” (Turn−off)
VO
Off
0 V to 30 V
0 V to 30 V
Low
On
0 V to 11.5 V
0 V to 10 V
Low
On
11.5 V to 13.5 V
10 V to 12 V
Transition
On
13.5 V to 30 V
12 V to 30 V
High
Table 2. PIN DEFINITIONS
Pin #
Name
Description
1
NC
2
Anode
Not Connected
3
Cathode
4
NC
Not Connected
5
VSS
Negative Supply Voltage
6
VO2
Output Voltage 2 (internally connected to VO1)
7
VO1
Output Voltage 1
8
VDD
Positive Supply Voltage
LED Anode
LED Cathode
Table 3. SAFETY AND INSULATION RATINGS
As per DIN EN/IEC 60747−5−5. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Symbol
Min.
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Typ.
< 150 VRMS
I–IV
< 300 VRMS
I–IV
< 450 VRMS
I–III
< 600 VRMS
I–III
< 1000 VRMS
(Option T, TS)
I–III
Climatic Classification
Max.
Unit
40/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
CTI
Comparative Tracking Index
175
VPR
Input to Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
2262
Vpeak
Input to Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
2651
Vpeak
VIORM
Maximum Working Insulation Voltage
1414
Vpeak
VIOTM
Highest Allowable Over Voltage
6000
Vpeak
External Creepage
8.0
mm
External Clearance
7.4
mm
10.16
mm
DTI
External Clearance (for Option T or TS, 0.4” Lead Spacing)
Distance Through Insulation (Insulation Thickness)
0.5
mm
TS
Case Temperature (Note 1)
175
°C
Input Current (Note 1)
400
mA
Output Power (Duty Factor ≤ 2.7 %) (Note 1)
700
mW
Insulation Resistance at TS, VIO = 500 V (Note 1)
109
W
IS,INPUT
PS,OUTPUT
RIO
1. Safety limit value − maximum values allowed in the event of a failure.
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FOD3120
Table 4. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified.)
Symbol
Parameter
Value
Units
TSTG
Storage Temperature
−55 to +125
°C
TOPR
Operating Temperature
−40 to +100
°C
Junction Temperature
−40 to +125
°C
Lead Wave Solder Temperature
(refer to page 13 for reflow solder profile)
260 for 10 s
°C
25
mA
TJ
TSOL
IF(AVG)
Average Input Current
IF(Peak)
Peak Transient Forward Current (Note 2)
1
A
Operating Frequency (Note 3)
50
kHz
Reverse Input Voltage
5
V
3.0
A
0 to 35
V
f
VR
IO(PEAK)
Peak Output Current (Note 4)
VDD – VSS
Supply Voltage
TA ≥ 90°C
VO(PEAK)
tR(IN), tF(IN)
0 to 30
Peak Output Voltage
Input Signal Rise and Fall Time
0 to VDD
V
500
ns
PDI
Input Power Dissipation (Note 5, Note 7)
45
mW
PDO
Output Power Dissipation (Note 6, Note 7)
250
mW
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Pulse Width, PW ≤ 1 ms, 300 pps
3. Exponential Waveform, IO(PEAK) ≤ ⎮2.5 A⎮ (≤0.3 ms)
4. Maximum pulse width = 10 ms, maximum duty cycle = 1.1%
5. Derate linearly above 87°C, free air temperature at a rate of 0.77 mW/°C
6. No derating required across temperature range.
7. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
Table 5. RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
TA
Ambient Operating Temperature
Value
Units
−40 to +100
°C
Power Supply
15 to 30
V
IF(ON)
Input Current (ON)
7 to 16
mA
VF(OFF)
Input Voltage (OFF)
0 to 0.8
V
VDD – VSS
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 6. ISOLATION CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at TA = 25°C
Symbol
Parameter
Conditions
VISO
Input−Output Isolation Voltage
TA = 25°C, R.H.< 50 %, t = 1.0 min.,
II−O ≤ 10 mA, 50 Hz (Note 8, Note 9)
RISO
Isolation Resistance
VI−O = 500 V (Note 8)
CISO
Isolation Capacitance
VI−O = 0 V, Frequency = 1.0 MHz (Note 8)
Min.
Typ.
Max.
5000
VRMS
1011
W
1
pF
8. Device is considered a two terminal device: pins 2 and 3 are shorted together and pins 5, 6, 7 and 8 are shorted together.
9. 5000 VRMS for 1 minute duration is equivalent to 6000 VACRMS for 1 second duration.
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Units
FOD3120
Table 7. ELECTRICAL CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at VDD = 30 V, VSS = Ground, TA = 25°C unless otherwise specified.
Symbol
VF
D(VF/TA)
Parameter
Input Forward Voltage
Conditions
Min.
IF = 10 mA
1.2
Temperature Coefficient
of Forward Voltage
Typ.
Max.
1.5
1.8
−1.8
BVR
Input Reverse Breakdown
Voltage
IR = 10 mA
CIN
Input Capacitance
f = 1 MHz, VF = 0 V
IOH
High Level Output Current
(Note 3)
VO = VDD – 3 V
−1.0
VO = VDD – 6 V
−2.0
IOL
Low Level Output Current
(Note 3)
VO = VSS + 3 V
1.0
VOH
High Level Output Voltage
IF = 10 mA, IO = −2.5 A
VDD – 6.25 V
VDD – 2.5 V
IF = 10 mA, IO = −100 mA
VDD – 0.25 V
VDD – 0.1 V
VOL
Low Level Output Voltage
V
mV/°C
5
V
60
VO = VSS + 6 V
Units
pF
−2.0
−2.5
A
−2.5
2.0
2.5
2.0
A
2.5
V
IF = 0 mA, IO = 2.5 A
VSS + 2.5 V
VSS + 6.25 V
IF = 0 mA, IO = 100 mA
VSS + 0.1 V
VSS + 0.25 V
V
IDDH
High Level Supply Current
VO = Open, IF = 7 to 16 mA
2.8
3.8
mA
IDDL
Low Level Supply Current
VO = Open, VF = 0 to 0.8 V
2.8
3.8
mA
IFLH
Threshold Input Current Low to
High
IO = 0 mA, VO > 5 V
2.3
5.0
mA
VFHL
Threshold Input Voltage High to
Low
IO = 0 mA, VO < 5 V
0.8
Under Voltage Lockout
Threshold
IF = 10mA, VO > 5 V
11.5
12.7
13.5
V
IF = 10 mA, VO < 5 V
10.0
11.2
12.0
V
VUVLO+
VUVLO−
UVLOHYS
Under Voltage Lockout
Threshold Hysteresis
V
1.5
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 8. SWITCHING CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at VDD = 30 V, VSS = Ground, TA = 25°C unless otherwise specified.
Symbol
Parameter
tPHL
Propagation Delay Time to Logic Low Output
tPLH
Propagation Delay Time to Logic High Output
PWD
PDD
(Skew)
Conditions
IF = 7 mA to 16 mA,
Rg = 10 W, Cg = 10 nF,
f = 10 kHz, Duty Cycle = 50 %
Min.
Typ.
Max.
Units
150
275
400
ns
150
255
400
ns
20
100
ns
250
ns
Pulse Width Distortion, | tPHL – tPLH |
Propagation Delay Difference Between Any
Two Parts or Channels, (tPHL – tPLH) (Note 10)
−250
tR
Output Rise Time (10% – 90%)
60
ns
tF
Output Fall Time (90% – 10%)
60
ns
tUVLO ON
UVLO Turn On Delay
IF = 10 mA , VO > 5 V
1.6
ms
tUVLO OFF
UVLO Turn Off Delay
IF = 10 mA , VO < 5 V
0.4
ms
| CMH |
Common Mode Transient Immunity at Output
High
TA = 25°C, VDD = 30 V,
IF = 7 to 16 mA, VCM = 2000 V
(Note 11)
35
50
kV/ms
| CML |
Common Mode Transient Immunity at Output
Low
TA = 25°C, VDD = 30 V, VF = 0 V,
VCM = 2000 V (Note 12)
35
50
kV/ms
10. The difference between tPHL and tPLH between any two FOD3120 parts under same test conditions.
11. Common mode transient immunity at output high is the maximum tolerable negative dVcm/dt on the trailing edge of the common mode
impulse signal, Vcm, to assure that the output will remain high (i.e., VO > 15.0 V).
12. Common mode transient immunity at output low is the maximum tolerable positive dVcm/dt on the leading edge of the common pulse signal,
Vcm, to assure that the output will remain low (i.e., VO < 1.0 V).
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FOD3120
0.5
(VOH − VDD), HIGH OUTPUT VOLTAGE
DROP (V)
(VOH − VDD), OUTPUT HIGH VOLTAGE
DROP (V)
TYPICAL PERFORMANCE CHARACTERISTICS
f = 250 Hz
Duty Cycle = 0.1%
IF = 7 mA to 16 mA
VDD = 15 V to 30 V
VSS = 0 V
TA = −40°C
0.0
−0.5
−1.0
−1.5
TA = 25°C
−2.0
TA = 100°C
−2.5
−3.0
0.0
0.5
1.0
1.5
2.0
2.5
0.00
VDD = 15 V to 30 V
VSS = 0 V
−0.05
IF = 7 mA to 16 mA
IO = −100 mA
−0.10
−0.15
−0.20
−0.25
−0.30
−40
−20
IOH, OUTPUT HIGH CURRENT (A)
IOH, OUTPUT HIGH CURRENT (A)
6
VDD = 30 V
4
VDD = 15 V
2
0
−40
−20
0
20
40
60
80
100
5
f = 100 Hz
Duty Cycle = 0.5%
IF = 7 mA to 16 mA
Rg = 10 W to GND
4
2
VDD = 15 V
0
−40
−20
TA = 100°C
1
TA = −40°C
0.0
0.5
1.0
1.5
0
20
40
60
80
100
Figure 4. Output High Current vs. Ambient
Temperature
2
0
100
TA, AMBIENT TEMPERATURE (°C)
VOL, OUTPUT LOW VOLTAGE (V)
VOL, OUTPUT LOW VOLTAGE (V)
3
80
1
Figure 3. Output High Current vs. Ambient
Temperature
f = 250 Hz
Duty Cycle = 99.9%
VF(OFF) = −3.0 V to 0.8 V
VDD = 15 V to 30 V
TA = 25°C
VSS = 0 V
60
VDD = 30 V
3
TA, AMBIENT TEMPERATURE (°C)
4
40
Figure 2. Output High Voltage Drop vs. Ambient
Temperature
Figure 1. Output High Voltage Drop vs. Output
High Current
f = 200 Hz
Duty Cycle = 0.2%
IF = 7 mA to 16 mA
Rg = 5 W to GND
20
TA, AMBIENT TEMPERATURE (°C)
IOH, OUTPUT HIGH CURRENT (A)
8
0
2.0
2.5
0.25
0.20
0.15
VDD = 15 V to 30 V
VSS = 0 V
IF(OFF) = −3 V to 0.8 V
IO = 100 mA
0.10
0.05
0.00
−40
−20
0
20
40
60
80
100
TA, AMBIENT TEMPERATURE (°C)
IOL, OUTPUT LOW CURRENT (A)
Figure 6. Output Low Voltage vs. Ambient
Temperature
Figure 5. Output Low Voltage vs. Output
Low Current
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FOD3120
8
f = 200 Hz
Duty Cycle = 99.8%
IF = 7 mA to 16 mA
Rg = 5 W to VDD
6
VDD = 30 V
4
VDD = 15 V
2
0
−40
−20
0
20
40
60
5
IOL OUTPUT LOW CURRENT (A)
IOL OUTPUT LOW CURRENT (A)
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
80
f = 100 Hz
Duty Cycle = 99.5%
IF = 7 mA to 16 mA
Rg = 10 W to VDD
4
2
VDD = 15 V
1
0
−40
100
TA, AMBIENT TEMPERATURE (°C)
3.6
3.0
IDD, SUPPLY CURRENT (mA)
IDD, SUPPLY CURRENT (mA)
3.2
IDDH
2.8
IDDL
2.6
2.4
2.2
−40
−20
0
20
40
60
0
80
3.2
2.8
15
20
tP, PROPAGATION DELAY (ns)
IFLH, LOW TO HIGH CURRENT
THRESHOLD (mA)
400
2.0
1.5
20
40
60
25
30
Figure 10. Supply Current vs. Supply
Voltage
2.5
0
100
V, SUPPLY VOLTAGE (V)
3.0
−20
80
IDDL
2.4
2.0
100
VDD = 15 V to 30 V
VSS = 0 V
Output = Open
1.0
−40
60
IDDH
Figure 9. Supply Current vs. Ambient
Temperature
3.5
40
IF = 10 mA (for IDDH)
IF = 0 mA (for IDDL)
VSS = 0 V, TA = 25°C
TA, AMBIENT TEMPERATURE (°C)
4.0
20
Figure 8. Output Low Current vs. Ambient
Temperature
VDD = 30 V
VSS = 0 V
IF = 0 mA (for IDDL)
IF = 10 mA (for IDDH)
3.4
−20
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Output Low Current vs. Ambient
Temperature
3.6
VDD = 30 V
3
80
350
300
250
tPHL
tPLH
200
150
100
15
100
IF = 10 mA
TA = 25°C
Rg = 10 W, Cg = 10 nF
Duty Cycle = 50%
f = 10 kHz
TA, AMBIENT TEMPERATURE (°C)
18
21
24
27
VDD, SUPPLY VOLTAGE (V)
Figure 12. Propagation Delay vs. Supply
Voltage
Figure 11. Low to High Input Current Threshold
vs. Ambient Temperature
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30
FOD3120
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
500
VDD = 30 V, VSS = 0 V
TA = 25°C
Rg = 10 W, Cg = 10 nF
Duty Cycle = 50%
f = 10 kHz
400
tPHL
300
tPLH
200
100
tP, PROPAGATION DELAY (ns)
tP, PROPAGATION DELAY (ns)
500
6
8
10
12
14
IF = 10 mA
VDD = 30 V, VSS = 0 V
Rg = 10 W, Cg = 10 nF
Duty Cycle = 50%
f = 10 kHz
400
300
tPHL
tPLH
200
100
−40
16
IF, FORWARD LED CURRENT (mA)
tPLH
0
10
20
30
40
60
80
400
300
tPLH
200
100
50
tPHL
0
20
40
60
80
Figure 15. Propagation Delay vs. Series Load
Resistance
Figure 16. Propagation Delay vs. Load
Capacitance
25
20
15
10
5
1
100
100
TA = 25°C
VDD = 30 V
0
100
IF = 10 mA
VDD = 30 V, VSS = 0 V
Rg = 10 W, TA = 25°C
Duty Cycle = 50%
f = 10 kHz
Cg, LOAD CAPACITANCE (nF)
30
0
40
Rg, SERIES LOAD RESISTANCE (W)
35
VO, OUTPUT VOLTAGE (V)
tP, PROPAGATION DELAY (ns)
tPHL
200
100
500
IF, FORWARD CURRENT (mA)
tP, PROPAGATION DELAY (ns)
300
20
Figure 14. Propagation Delay vs. Ambient
Temperature
IF = 10 mA
VDD = 30 V, VSS = 0 V
Cg = 10 nF, TA = 25°C
Duty Cycle = 50%
f = 10 kHz
400
0
TA, AMBIENT TEMPERATURE (°C)
Figure 13. Propagation Delay vs. LED Forward
Current
500
−20
2
3
4
10
TA = 100°C
1
TA = −40°C
0.1
TA = 25°C
0.01
0.001
0.6
5
0.8
1.0
1.2
1.4
1.6
1.8
VF, FORWARD VOLTAGE (V)
IF, FORWARD LED CURRENT (mA)
Figure 18. Input Forward Current vs. Forward
Voltage
Figure 17. Transfer Characteristics
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FOD3120
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VO, OUTPUT VOLTAGE (V)
14
12
10
(11.25, 11.30)
(12.75, 12.80)
8
6
4
2
0
(11.20, 0.00)
0
5
10
(12.70, 0.00)
15
(VDD − VSS), SUPPLY VOLTAGE (V)
Figure 19. Under Voltage Lockout
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20
FOD3120
TEST CIRCUIT
+
+
C1
0.1 mF
C2
47 mF
Power Supply
VDD = 15 V to 30 V
Pulse Generator
PW = 4.99 ms
Period = 5 ms
ROUT = 50 W
1
8
2
7
3
6
Pulse−In
R2
100 W
Iol
+
D1
VOL
LED−IFmon
+
C3
0.1 mF
C4
47 mF
Power Supply
V=6V
5
4
R1
100 W
To Scope
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 99.8 %
VDD = 15 V to 30 V
VSS = 0 V
VF(OFF) = −3.0 V to 0.8 V
Figure 20. IOL Test Circuit
+
+
C1
0.1 mF
C2
47 mF
Power Supply
VDD = 15 V to 30 V
Pulse Generator
PW = 10 ms
Period = 5 ms
ROUT = 50 W
1
8
2
7
Pulse−In
R2
100 W
+
+
C3
0.1 mF
Ioh
VOH
LED−IFmon
5
4
R1
100 W
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 0.2 %
VDD = 15 V to 30 V
V SS = 0 V
I F = 7 mA to 16 mA
Figure 21. IOH Test Circuit
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D1
Current
Probe
To Scope
Power Supply
V=6V
–
6
3
C4
47 mF
FOD3120
1
8
2
7
0.1 mF
IF = 7 to 16 mA
VDD = 15 to 30 V
+
–
VDD = 15 to 30 V
VO
6
3
+
–
100 mA
5
4
Figure 22. VOH Test Circuit
1
8
2
7
3
6
4
5
100 mA
0.1 mF
VO
Figure 23. VOL Test Circuit
1
8
2
7
0.1 mF
IF = 7 to 16 mA
3
6
4
5
+
–
VDD = 30 V
+
–
VDD = 30 V
VO
Figure 24. IDDH Test Circuit
+
–
1
8
2
7
0.1 mF
VF = −0.3 to 0.8 V
3
6
4
5
Figure 25. IDDL Test Circuit
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10
VO
FOD3120
IF
1
8
2
7
3
6
4
5
0.1 mF
+
–
VDD = 15 to 30 V
+
–
VDD = 15 to 30 V
VO > 5 V
Figure 26. IFLH Test Circuit
+
–
1
8
2
7
0.1 mF
VF = −0.3 to 0.8 V
3
6
4
5
VO
Figure 27. VFHL Test Circuit
1
8
2
7
0.1 mF
+
–
IF = 10 mA
3
6
4
5
Figure 28. UVLO Test Circuit
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VO = 5 V
15 V or 30 V
VDD Ramp
FOD3120
1
8
2
7
VO
6
Rg = 10 W
0.1 mF
+
–
3
Probe
F = 10 kHz
DC = 50 %
+
–
VDD = 15 to 30 V
Cg = 10 nF
50 W
4
5
IF
tr
tf
90 %
50 %
VOUT
10 %
tPLH
tPHL
Figure 29. tPHL, tPLH, tR and tF Test Circuit and Waveforms
IF
1
8
2
7
A
B
5V
+
–
3
6
4
5
0.1 mF
+
–
VDD = 30V
VO
+–
VCM = 2,000 V
VCM
0V
Dt
VOH
VO
Switch at A: I F = 10 mA
VO
VOL
Switch at B: IF = 0 mA
Figure 30. CMR Test Circuit and Waveforms
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12
FOD3120
REFLOW PROFILE
260
240
220
200
Max. Ramp−up Rate = 3°C/S
Max. Ramp−down Rate = 6°C/S
TP
tP
TL
Tsmax
Temperature (_C)
160
140
tL
Preheat Area
180
Tsmin
ts
120
100
80
60
40
20
0
240
120
360
Time 25°C to Peak
Time (seconds)
Figure 31. Reflow Profile
Table 9. REFLOW PROFILE
Profile Feature
Pb−Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60−120 s
Ramp−up Rate (tL to tP)
3°C/s max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60−150 s
Peak Body Package Temperature
260°C +0°C / −5°C
Time (tP) within 5°C of 260°C
30 s
Ramp−down Rate (TP to TL)
6°C/s max.
Time 25°C to Peak Temperature
8 min. max.
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13
FOD3120
ORDERING INFORMATION
Part Number
Package
Shipping†
FOD3120
DIP 8−Pin
50 / Tube
FOD3120S
SMT 8−Pin (Lead Bend)
50 / Tube
FOD3120SD
SMT 8−Pin (Lead Bend)
1000 / Tape & Reel
FOD3120V
DIP 8−Pin, DIN EN/IEC60747−5−5 option
50 / Tube
FOD3120SV
SMT 8−Pin (Lead Bend), DIN EN/IEC60747−5−5 option
50 / Tube
FOD3120SDV
SMT 8−Pin (Lead Bend), DIN EN/IEC60747−5−5 option
1000 / Tape & Reel
FOD3120TV
DIP 8−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 option
50 / Tube
FOD3120TSV
SMT 8−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 option
50 / Tube
FOD3120TSR2V
SMT 8−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 option
700 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
OPTOPLANAR is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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14
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 6.6x3.81, 2.54P
CASE 646BW
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13445G
PDIP8 6.6X3.81, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 9.655x6.6, 2.54P
CASE 646CQ
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13446G
PDIP8 9.655X6.6, 2.54P
DATE 18 SEP 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 GW
CASE 709AC
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13447G
PDIP8 GW
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 GW
CASE 709AD
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13448G
PDIP8 GW
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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