FOD410, FOD4108,
FOD4116, FOD4118
6-Pin DIP High dv/dt
Zero-Cross Triac Drivers
Description
The FOD410, FOD4108, FOD4116 and FOD4118 devices consist
of an infrared emitting diode coupled to a hybrid triac formed with two
inverse parallel SCRs which form the triac function capable of driving
discrete triacs. The FOD4116 and FOD4118 utilize a high efficiency
infrared emitting diode which offers an improved trigger sensitivity.
These devices are housed in a standard 6−pin dual in−line (DIP)
package.
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PDIP6 GW
CASE 709AG
6
1
PDIP6 7.3x6.5, 2.54P
CASE 646CE
6
Features
• 300 mApeak On−State Current
• Zero−Voltage Crossing
• High Blocking Voltage
•
•
•
•
1
− 600 V (FOD410, FOD4116)
− 800 V (FOD4108, FOD4118)
High Trigger Sensitivity
− 1.3 mA (FOD4116, FOD4118)
− 2 mA (FOD410, FOD4118)
High Static dv/dt (10,000 V/ms)
Safety and Regulatory Approvals:
− UL1577, 5.000 VACRMS for 1 Minute
− DIN−EN/IEC60747−5−5
These Devices are Pb−Free and are RoHS Compliant
6
1
MARKING DIAGRAM
ON
FOD410
V
X
YY
D
ON
= ON Semiconductor Logo
FOD410 = Device Number
V
= VDE mark. DIN EN/IEC60747−5−5
Option (only appears on component
ordered with this option)
X
= One−Digit Year Code
YY
= Digit Work Week
D
= Assembly Package Code
Applications
•
•
•
•
•
PDIP6 7.3x6.5, 2.54P
CASE 646CF
Solid−State Relays
Industrial Controls
Lighting Controls
Static Power Switches
AC Motor Starters
FUNCTIONAL SCHEMATIC
ANODE
1
CATHODE
2
N/C 3
6 MAIN TERM.
5 NC*
4 MAIN TERM.
*DO NOT CONNECT
(TRIAC SUBSTRATE)
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
May, 2019 − Rev. 3
1
Publication Order Number:
FOD4118/D
FOD410, FOD4108, FOD4116, FOD4118
SAFETY AND INSULATION RATINGS
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
< 150 VRMS
I−IV
< 300 VRMS
I−IV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
VPR
175
Parameter
Value
Unit
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over−Voltage
6000
Vpeak
External Creepage
≥7
mm
External Clearance
≥7
mm
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.4
mm
TS
Case Temperature (Note 1)
175
°C
IS,INPUT
Input Current (Note 1)
400
mA
PS,OUTPUT
Output Power (Note 1)
700
mW
> 109
W
RIO
Insulation Resistance at TS, VIO = 500 V (Note 1)
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the
safety ratings shall be ensured by means of protective circuits.
1. Safety limit values − maximum values allowed in the event of a failure.
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2
FOD410, FOD4108, FOD4116, FOD4118
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified)
Symbol
Parameter
Device
Value
Unit
TSTG
Storage Temperature
All
−55 to +150
°C
TOPR
Operating Temperature
All
−55 to +100
°C
Junction Temperature
All
−55 to +125
°C
Lead Solder Temperature
All
260 for 10 sec
°C
Total Device Power Dissipation @ 25°C
All
500
mW
Derate Above 25°C
All
6.6
mW/°C
IF
Continuous Forward Current
All
30
mA
VR
Reverse Voltage
All
6
V
Total Power Dissipation 25°C Ambient
All
50
mW
Derate Above 25°C
All
0.71
mW/°C
FOD410, FOD4116
600
FOD4108, FOD4118
800
TJ
TSOL
PD(TOTAL)
EMITTER
PD(EMITTER)
DETECTOR
VDRM
Off−State Output Terminal Voltage
ITSM
Peak Non−Repetitive Surge Current (single cycle 60 Hz sine wave)
All
3
Apeak
ITM
Peak On−State Current
All
300
mApeak
Total Power Dissipation @ 25°C Ambient
All
450
mW
Derate Above 25°C
All
5.9
mW/°C
PD(DETECTOR)
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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3
FOD410, FOD4108, FOD4116, FOD4118
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
Device
Min
Typ
Max
Unit
INDIVIDUAL COMPONENT CHARACTERISTICS
Emitter
VF
Input Forward Voltage
IF = 20 mA
All
−
1.25
1.50
V
IR
Reverse Leakage Current
VR = 6 V
All
−
0.0001
10
mA
Peak Blocking Current
Either Direction
IF = 0,
TA = 100°C
(Note 2)
VD = 600 V
FOD410,
FOD4116
−
3
100
mA
VD = 800 V
FOD4108,
FOD4118
TA = 100 °C
VD = 600 V
FOD410,
FOD4116
−
3
100
mA
VD = 800 V
FOD4108,
FOD4118
VD = VDRM
All
10,000
−
−
V/ms
FOD410,
FOD4108
−
0.65
2.0
mA
FOD4116,
FOD4118
−
0.65
1.3
Detector
ID(RMS)
IR(RMS)
dv/dt
Reverse Current
Critical Rate of Rise of
Off−State Voltage
IF = 0 A (Note 3)
TRANSFER CHARACTERISTICS
IFT
LED Trigger Current
Main Terminal Voltage = 5 V (Note 4)
VTM
Peak On−State Voltage,
Either Direction
ITM = 300 mA peak, IF = Rated IFT
All
−
2.2
3
V
IH
Holding Current, Either
Direction
VT = 3 V
All
−
200
500
mA
IL
Latching Current
VT = 2.2 V
Turn−On Time
PF = 1.0,
IT = 300 mA
tON
tOFF
Turn−Off Time
All
−
5
−
mA
VRM = VDM = 424 VAC
FOD410,
FOD4116,
FOD4118
−
60
−
ms
VRM = VDM = 565 VAC
FOD4108
VRM = VDM = 424 VAC
FOD410,
FOD4116,
FOD4118
−
52
−
ms
VRM = VDM = 565 VAC
FOD4108
dv/dtC
Critical Rate of Rise of
Voltage at Current
Commutation
VD = 230 VRMS, ID = 300 mAPK
All
−
10
−
V/ms
di/dtC
Critical Rate of Rise of
On−State Current
Commutation
VD = 230 VRMS, ID = 300 mAPK
All
−
9
−
A/ms
dv(IO)/dt
Critical Rate of Rise of
Coupled Input / Output
Voltage
IT = 0 A, VRM = VDM = 424 VAC
All
10,000
−
−
V/ms
2. Test voltage must be applied within dv/dt rating.
3. This is static dv/dt. Commutating dv/dt is a function of the load−driving thyristor(s) only.
4. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max
IFT (2 mA for FOD410 and FOD4108 and 1.3 mA for FOD4116 and FOD4118) and the absolute max IF (30 mA).
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4
FOD410, FOD4108, FOD4116, FOD4118
ZERO CROSSING CHARACTERISTICS
Symbol
Parameter
Device
Min
Typ
Max
Unit
VINH
Inhibit Voltage (MT1−MT2
Voltage above which
device will not trigger)
IF = Rated IFT
Test Conditions
All
−
8
25
Vpeak
IDRM2
Leakage in Inhibit State
IF = Rated IFT, Rated VDRM, Off−State
All
−
20
200
mA
f = 60 Hz, t = 1 Minute (Note 5)
All
5,000
−
−
VACRMS
ISOLATION CHARACTERISTICS
VISO
Steady State Isolation
Voltage
5. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1, 2 and 3 are common, and pins 4, 5 and 6 are
common. 5,000 VACRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second duration.
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5
FOD410, FOD4108, FOD4116, FOD4118
TYPICAL APPLICATION
Figure 1 shows a typical circuit for when hot line
switching is required. In this circuit the “hot” side of the line
is switched and the load connected to the cold or neutral side.
The load may be connected to either the neutral or hot line.
Rin is calculated so that IF is equal to the rated IFT of the
Rin
VCC
1
2
3
6
FOD410
FOD4108
FOD4116
FOD4118
part, 2 mA for FOD410 and FOD4108, 1.3 mA for
FOD4116 and FOD4118. The 39 W resistor and 0.01 mF
capacitor are for snubbing of the triac and may or may not
be necessary depending upon the particular triac and load
use.
360 W
HOT
5
FKPF12N80
39 W
4
240 VAC
0.01 mF
330 W
LOAD
NEUTRAL
*For highly inductive loads (power factor < 0.5), change this value to 360 W.
Figure 1. Hot−Line Switching Application Circuit
240 VAC
R1
1
VCC
Rin
2
3
D1
6
FOD410
FOD4108
FOD4116
FOD4118
5
4
SCR
SCR
360 W
R2
D2
LOAD
Figure 2. Inverse−Parallel SCR Driver Circuit
Suggested method of firing two, back−to−back SCR’s
with a ON Semiconductor triac driver. Diodes can be
1N4001; resistors, R1 and R2, are optional 330 W.
NOTE: This optoisolator should not be used to drive a
load directly. It is intended to be a discrete triac
driver device only.
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6
FOD410, FOD4108, FOD4116, FOD4118
TYPICAL CHARACTERISTICS
1.6
1.4
−55°C
1.2
25°C
85°C
1.0
0.8
0.6
0.1
1.6
IFT – NORMALIZED LED TRIGGER CURRENT
VF – FORWARD VOLTAGE (V)
1.8
110
IF – FORWARD CURRENT (mA)
1.4
1.2
1.0
0.8
0.6
−60
100
Figure 3. Forward Voltage
(VF) vs. Forward Current (IF)
100
tD = t(IF/IFT 25°C)
VD = 400 VP−P
F = 60 Hz
0.005
0.01
1000
tD – DELAY TIME (ms)
Duty Factor
t
0.02
DF =
0.05
t
0.1
0.2
0.5
100
10−5
10−4
10−3
10−2
10−1
t – LED PULSE DURATION (s)
100
10
1
101
10
IFT/IF – NORMALIZED IF (mA)
1
Figure 5. Peak LED Current vs. Duty
Factor, Tau
Figure 6. Trigger Delay Time
1000
VL = 250 VP−P
F = 60 Hz
Normalized to DC
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0
200
400
600
W – PULSE WIDTH (ms)
800
ITM – ON−STATE CURRENT (mA)
1.7
0.9
80
100
10
10−6
IFTH(PW)/IFTH(DC) – NORMALIZED IFTH
−20
0
20
40
60
TA – AMBIENT TEMPERATURE (°C)
−40
Figure 4. Normalized LED Trigger Current
(IFT) vs. Ambient Temperature (TA)
10000
If(pk) – PEAK LED CURRENT (mA)
VAK = 5.0 V
Normalized to TA = 25°C
100
1
1000
TA = 100°C
10
0
1
TA = 25°C
2
3
4
VTM – ON−STATE VOLTAGE (V)
Figure 7. Pulse Trigger Current
Figure 8. On−State Voltage (VTM) vs.
On−State Current (ITM)
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7
100
FOD410, FOD4108, FOD4116, FOD4118
IH – NORMALIZED HOLDING CURRENT
2.2
IDRM – NORMALIZED OFF−STATE CURRENT
TYPICAL CHARACTERISTICS (continued)
Normalized to TA = 25°C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
−60
−40
−20
0
20
40
60
80
100
10
VD = 800 V, I BD (mA)
Normalized to TA = 25°C
1
0.1
−60
−40
−20
TA – AMBIENT TEMPERATURE (°C)
Figure 9. Normalized Holding Current (IH)
vs. Ambient Temperature (TA)
IDRM2 (NORM) = IDRM2 (TA) / IDRM2 (25°C)
2.5
IF = Rated IFT
Normalized to TA = 25°C
1.1
1.0
0.9
−60
−40
−20
0
20
40
80
60
2.0
60
80
100
1.5
1.0
0.5
0.0
−60
100
−40
−20
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
Figure 12. Normalized Leakage in Inhibit
State (IDRM2) vs. Ambient Temperature (TA)
Figure 11. Normalized Inhibit Voltage
(VINH) vs. Ambient Temperature (TA)
350
ITP = f(TA)
300
250
200
150
100
50
−60
40
IF = Rated IFT
VDRM = 600 V
Normalized to TA = 25°C
TA – AMBIENT TEMPERATURE (°C)
ITP – PEAK ON−STATE CURRENT (mA)
VINH (NORM) = VINH (TA) / VINH (25°C)
20
Figure 10. Normalized Off−State Current
(IDRM) vs. Ambient Temperature (TA)
1.2
0.8
0
TA – AMBIENT TEMPERATURE (°C)
−40
−20
0
20
40
60
TA – AMBIENT TEMPERATURE (°C)
Figure 13. Current Reduction
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8
80
100
FOD410, FOD4108, FOD4116, FOD4118
REFLOW PROFILE
245 _C, 10 to 30 seconds
Temperature (_C)
300
260_C peak
250
200
150
Time above 183_C, < 160 seconds
100
50
0
Ramp up = 2 to 10_C/second
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
•Peak reflow temperature: 262_C (package surface temperature)
•Time of temperature higher than 18 5_C for 160 seconds or less
•One time soldering reflow is recommended
Figure 14. Reflow Profile
ORDERING INFORMATION
Part Number
FOD410
Package
Shipping†
DIP 6−Pin
Tube (50 Units)
FOD410S
SMT 6−Pin (Lead Bend)
Tube (50 Units)
FOD410SD
SMT 6−Pin (Lead Bend)
Tape and Reel (1000 Units)
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
Tube (50 Units)
FOD410SV
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
Tube (50 Units)
FOD410SDV
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
Tape and Reel (1000 Units)
FOD410V
FOD410TV
DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option Tube (50 Units)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
6. The product orderable part number system listed in this table also applies to the FOD4108, FOD4116, and FOD4118 product families.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 7.3x6.5, 2.54P
CASE 646CE
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13456G
PDIP6 7.3X6.5, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 7.3x6.5, 2.54P
CASE 646CF
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13457G
PDIP6 7.3X6.5, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 GW
CASE 709AG
ISSUE A
DOCUMENT NUMBER:
DESCRIPTION:
98AON13455G
PDIP6 GW
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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