6-Pin DIP High dv/dt
Random Phase Triac
Drivers
FOD420, FOD4208,
FOD4216, FOD4218
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Description
The FOD420, FOD4208, FOD4216 and FOD4218 devices consist
of an infrared emitting diode coupled to a hybrid random phase triac
formed with two inverse parallel SCRs which form the triac function
capable of driving discrete triacs. The FOD4216 and FOD4218 utilize
a high efficiency infrared emitting diode which offers an improved
trigger sensitivity. These devices are housed in a standard 6−pin dual
in−line (DIP) package.
1
1
• 300 mApeak On−State Current
• High Blocking Voltage
•
1
MARKING DIAGRAM
ON
FOD420
V
X
YY
D
ON
= ON Semiconductor Logo
FOD420 = Device Number
V
= VDE mark. DIN EN/IEC60747−5−5
Option (only appears on component
ordered with this option)
X
= One−Digit Year Code
YY
= Digit Work Week
D
= Assembly Package Code
Applications
•
•
•
•
•
PDIP6 7.3x6.5, 2.54P
CASE 646CF
6
600 V (FOD420, FOD4216)
♦ 800 V (FOD4208, FOD4218)
High Trigger Sensitivity
♦ 1.3 mA (FOD4216, FOD4218)
♦ 2 mA (FOD420, FOD4208)
High Static dv/dt (10,000 V/ms)
Safety and Regulatory Approvals:
♦ UL1577, 5,000 VACRMS for 1 Minute
♦ DIN−EN/IEC60747−5−5
These Devices are Pb−Free and are RoHS Compliant
♦
•
•
PDIP6 7.3x6.5, 2.54P
CASE 646CE
6
Features
•
PDIP6 GW
CASE 709AG
6
Solid−State Relays
Industrial Controls
Lighting Controls
Static Power Switches
AC Motor Starters
FUNCTIONAL SCHEMATIC
ANODE 1
CATHODE 2
N/C 3
6 MAIN TERM.
5 NC*
4 MAIN TERM.
*DO NOT CONNECT
(TRIAC SUBSTRATE)
ORDERING INFORMATION
See detailed ordering and shipping information on page 8
of this data sheet.
© Semiconductor Components Industries, LLC, 2018
August, 2020 − Rev. 4
1
Publication Order Number:
FOD4218/D
FOD420, FOD4208, FOD4216, FOD4218
SAFETY AND INSULATION RATINGS
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage
< 150 VRMS
I–IV
< 300 VRMS
I–IV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample
Test with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production
Test with tm = 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over−Voltage
6000
Vpeak
External Creepage
≥7
mm
External Clearance
≥7
mm
VPR
Parameter
DTI
Distance Through Insulation (Insulation Thickness)
≥0.4
mm
TS
Case Temperature (Note 1)
175
°C
IS,INPUT
Input Current (Note 1)
400
mA
PS,OUTPUT
Output Power (Note 1)
700
mW
Insulation Resistance at TS, VIO = 500 V (Note 1)
>109
W
RIO
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the
safety ratings shall be ensured by means of protective circuits.
1. Safety limit values – maximum values allowed in the event of a failure.
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2
FOD420, FOD4208, FOD4216, FOD4218
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Symbol
Device
Value
Unit
TSTG
Storage Temperature
All
−55 to +150
°C
TOPR
Operating Temperature
All
−55 to +100
°C
Junction Temperature
All
−55 to +125
°C
Lead Solder Temperature
All
260 for 10 sec
°C
Total Device Power Dissipation @ 25°C
All
500
mW
Derate Above 25°C
All
6.6
mW/°C
IF
Continuous Forward Current
All
30
mA
VR
Reverse Voltage
All
6
V
Total Power Dissipation 25°C Ambient
All
50
mW
Derate Above 25°C
All
0.71
mW/°C
FOD420, FOD4216
600
V
FOD4208, FOD4218
800
TJ
TSOL
PD(TOTAL)
Parameter
EMITTER
PD(EMITTER)
DETECTOR
VDRM
Off−State Output Terminal Voltage
ITSM
Peak Non−Repetitive Surge Current (single cycle 60 Hz sine wave)
All
3
Apeak
ITM
Peak On−State Current
All
300
mApeak
PD(DETECTOR)
Total Power Dissipation @ 25°C Ambient
All
450
mW
PD(DETECTOR)
Derate Above 25°C
All
5.9
mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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3
FOD420, FOD4208, FOD4216, FOD4218
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Symbol
Parameter
Test Condition
Device
Min
Typ
Max
Unit
INDIVIDUAL COMPONENT CHARACTERISTICS
Emitter
VF
Input Forward Voltage
IF = 20 mA
All
−
1.28
1.50
V
IR
Reverse Leakage Current
VR = 6 V
All
−
0.01
10
mA
Peak Blocking Current,
Either Direction
IF = 0,
TA = 100°C
(Note 2)
VD = 600 V
FOD420,
FOD4216
−
3
100
mA
VD = 800 V
FOD4208,
FOD4218
TA = 100°C
VD = 600 V
FOD420,
FOD4216
−
3
100
mA
VD = 800 V
FOD4208,
FOD4218
VD = VDRM
All
10,000
−
−
V/ms
FOD420,
FOD4208
−
0.75
2.0
mA
FOD4216,
FOD4218
−
0.75
1.3
Detector
ID(RMS)
IR(RMS)
dv/dt
Reverse Current
Critical Rate of Rise of
Off−State Voltage
IF = 0 A (Note 3)
TRANSFER CHARACTERISTICS
IFT
LED Trigger Current
Main Terminal Voltage = 5 V (Note 4)
VTM
Peak On−State Voltage,
Either Direction
ITM = 300 mA peak, IF = Rated IFT
All
−
2.2
3
V
IH
Holding Current, Either
Direction
VT = 3 V
All
−
200
500
mA
IL
Latching Current
VT = 2.2 V
Turn−On Time
PF = 1.0,
IT = 300 mA
tON
tOFF
Turn−Off Time
All
−
5
−
mA
VRM = VDM = 424 VAC
FOD420,
FOD4216,
FOD4218
−
60
−
ms
VRM = VDM = 565 VAC
FOD4208
VRM = VDM = 424 VAC
FOD420,
FOD4216,
FOD4218
−
52
−
ms
VRM = VDM = 565 VAC
FOD4208
dv/dtC
Critical Rate of Rise of
Voltage at Current
Commutation
VD = 230 VRMS, ID = 300 mAPK
All
−
10
−
V/ms
di/dtC
Critical Rate of Rise of
On−State Current
Commutation
VD = 230 VRMS, ID = 300 mAPK
All
−
9
−
A/ms
dv(IO)/dt
Critical Rate of Rise of
Coupled Input / Output
Voltage
IT = 0 A, VRM = VDM = 424 VAC
All
10,000
−
−
V/ms
f = 60 Hz, t = 1 Minute (Note 5)
All
5,000
−
−
VACRMS
ISOLATION CHARACTERISTICS
VISO
Steady State Isolation
Voltage
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Test voltage must be applied within dv/dt rating.
3. This is static dv/dt.. Commutating dv/dt is a function of the load−driving thyristor(s) only.
4. All devices are guaranteed to trigger at an IF value less than or equal to max IFT.Therefore, recommended operating IF lies between max IFT
(2 mA for FOD420 and FOD4208 and 1.3 mA for FOD4216 and FOD4218) and the absolute max IF (30 mA).
5. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1, 2 and 3 are common, and pins 4, 5 and 6 are
common. 5,000 VACRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second duration.
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4
FOD420, FOD4208, FOD4216, FOD4218
TYPICAL APPLICATION
Figure 1 shows a typical circuit for when hot line
switching is required. In this circuit the “hot” side of the line
is switched and the load connected to the cold or neutral side.
The load may be connected to either the neutral or hot line.
Rin is calculated so that IF is equal to the rated IFT of the
VCC
Rin
1
2
3
6
FOD420
FOD4208
FOD4216
FOD4218
part, 2 mA for FOD420 and FOD4208, 1.3 mA for
FOD4216 and FOD4218. The 39 W resistor and 0.01 mF
capacitor are for snubbing of the triac and may or may not
be necessary depending upon the particular triac and load
use.
360 W
HOT
5
FKPF12N80
39 W*
4
240 VAC
0.01 mF
330 W
LOAD
NEUTRAL
*For highly inductive loads (power factor < 0.5), change this value to 360 W.
Figure 1. Hot−Line Switching Application Circuit
240 VAC
R1
1
VCC
Rin
2
3
D1
6
FOD420
FOD4208
FOD4216
FOD4218
SCR
5
4
SCR
360 W
R2
D2
LOAD
Figure 2. Inverse−Parallel SCR Driver Circuit
Suggested method of firing two, back−to−back SCR’s
with On Semiconductor triac driver. Diodes can be 1N4001;
resistors, R1 and R2, are optional 330 W.
NOTE: This optoisolator should not be used to drive a
load directly. It is intended to be a discrete triac
driver device only.
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5
FOD420, FOD4208, FOD4216, FOD4218
IFT – NORMALIZED LED TRIGGER CURRENT
TYPICAL CHARACTERISTICS
VF – FORWARD VOLTAGE (V)
1.8
1.6
1.4
−55°C
1.2
25°C
1.0
85°C
0.8
0.6
0.1
1
10
IF – FORWARD CURRENT (mA)
100
1.6
1.4
1.2
1.0
0.8
0.6
−60 −40
Figure 3. Forward Voltage (VF)
vs. Forward Current (IF)
100
t
Duty Factor
0.005
0.01
1000
0.02
0.05
0.1
0.1
0.2
0.2
0.5
0.5
100
10
10 −6
10 −5
t
t
DF =
t
10 −4 10 −3 10 −2 10 −1
t – LED PULSE DURATION (s)
10 0
10
1
10 1
1.4
1.3
1.2
1.1
1.0
0.9
0
200
400
600
800
PW – PULSE WIDTH (ms)
100
1000
ITM – ON−STATE CURRENT (mA)
IFTH(PW) / IFTH(DC) − NORMALIZED IFTH
1.5
10
IFT / IF – NORMALIZED IF (mA)
1
Figure 6. Trigger Delay Time
VL = 250 VP−P
F = 60 Hz
Normalized to DC
1.6
100
TD = t (IF / IFT 25°C)
VD = 400 VP−P
F = 60 Hz
Figure 5. Peak LED Current vs. Duty Factor, Tau
1.7
−20
0
20
40
60
80
TA – AMBIENT TEMPERATURE (°C)
Figure 4. Normalized LED Trigger Current (IFT)
vs. Ambient Temperature (TA)
tD – DELAY TIME (ms)
If(pk) – PEAK LED CURRENT (mA)
10000
VAK = 5.0 V
Normalized to TA = 25°C
100
1
1000
TA = 100°C
10
0
Figure 7. Pulse Trigger Current
1
TA = 25°C
5
2
3
4
VTM – ON−STATE VOLTAGE (V)
Figure 8. On−State Voltage (VTM)
vs. On−State Current (ITM)
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6
6
FOD420, FOD4208, FOD4216, FOD4218
IDRM – NORMALIZED OFF−STATE CURRENT
2.2
Normalized to to TA = 25°C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
−60 −40
−20
0
20
40
60
80
100
10
VD = 800 V, IBD (mA)
Normalized to to TA = 25°C
1
0.1
−60 −40
TA – AMBIENT TEMPERATURE (°C)
−20
0
40
60
80
100
Figure 10. Normalized Off−State Current (IDRM)
vs. Ambient Temperature (TA)
350
ITP = f (TA)
300
250
200
150
100
50
−60 −40
20
TA – AMBIENT TEMPERATURE (°C)
Figure 9. Normalized Holding Current (IH)
vs. Ambient Temperature (TA)
ITP – PEAK ON−STATE CURRENT (mA)
IH – NORMALIZED HOLDING CURRENT
TYPICAL CHARACTERISTICS (continued)
−20
0
20
40
60
TA – AMBIENT TEMPERATURE (°C)
Figure 11. Current Reduction
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7
80
100
FOD420, FOD4208, FOD4216, FOD4218
REFLOW PROFILE
245°C, 10 to 30 seconds
Temperature (°C)
300
260°C peak
250
200
150
Time above 183°C, < 160 seconds
100
50
Ramp up = 2 to 10°C/second
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
•Peak reflow temperature: 262°C (package surface temperature)
•Time of temperature higher than 183°C for 160 seconds or less
•One time soldering reflow is recommended
Figure 12. Reflow Profile
ORDERING INFORMATION
Part Number
Package
Shipping†
FOD420
DIP 6−Pin
50 Units / Tube
FOD420S
SMT 6−Pin (Lead Bend)
50 Units / Tube
FOD420SD
SMT 6−Pin (Lead Bend)
1000 / Tape & Reel
FOD420V
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
50 Units / Tube
FOD420SV
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
50 Units / Tube
FOD420SDV
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
1000 / Tape & Reel
FOD420TV
DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option
50 Units / Tube
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
6. The product orderable part number system listed in this table also applies to the FOD4208, FOD4216, and FOD4218product families.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 7.3x6.5, 2.54P
CASE 646CE
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13456G
PDIP6 7.3X6.5, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 7.3x6.5, 2.54P
CASE 646CF
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13457G
PDIP6 7.3X6.5, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 GW
CASE 709AG
ISSUE A
DOCUMENT NUMBER:
DESCRIPTION:
98AON13455G
PDIP6 GW
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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