DATA SHEET
www.onsemi.com
4-Pin DIP Phototransistor
Optocouplers
FOD814, FOD817
PDIP4
CASE 646CD
CASE 646CA
PDIP4 GW
CASE 709AH
Introduction or Description
The FOD814 consists of two gallium arsenide infrared emitting
diodes, connected in inverse parallel, driving a silicon phototransistor
output in a 4−pin dual in−line package. The FOD817 Series consists of
a gallium arsenide infrared emitting diode driving a silicon
phototransistor in a 4−pin dual in−line package.
Features
FOD814: 20–300%
FOD814A: 50–150%
♦ FOD817: 50–600%
♦ FOD817A: 80–160%
♦ FOD817B: 130–260%
♦ FOD817C: 200–400%
♦ FOD817D: 300–600%
Minimum BVCEO of 70 V Guaranteed
Safety and Regulatory Approvals
♦ UL1577, 5,000 VACRMS for 1 Minute
♦ DIN EN/IEC60747−5−5
This Device is Pb−Free
♦
♦
•
VXZZY
$Y 81x
V
X
ZZ
Y
$Y
81x
• AC Input Response (FOD814)
• Current Transfer Ratio in Selected Groups
•
•
MARKING DIAGRAM
= VDE Mark
= One Digit Year Code
= Two Digit Work Week
= Assembly Package Code
= Logo
= Specific Device Code
x = 4 or 7
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
Typical Applications
• FOD814 Series
AC Line Monitor
Unknown Polarity DC Sensor
♦ Telephone Line Interface
FOD817 Series
♦ Power Supply Regulators
♦ Digital Logic Inputs
♦ Microprocessor Inputs
♦
♦
•
© Semiconductor Components Industries, LLC, 2006
August, 2021 − Rev. 7
1
Publication Order Number:
FOD814/D
FOD814, FOD817
FUNCTIONAL BLOCK DIAGRAM
Anode, Cathode 1
4 Collector
Cathode, Anode
3 Emitter
2
Anode 1
4
Collector
Cathode 2
3
Emitter
Figure 1. Schematic − FOD814
Figure 2. Schematic − FOD817
SAFETY AND INSULATION RATINGS
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Characteristics
< 150 VRMS
I–IV
< 300 VRMS
I–III
Climatic Classification
30/110/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
175
Symbol
Value
Unit
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1594
VIORM
Maximum Working Insulation Voltage
850
VIOTM
Highest Allowable Over−Voltage
8000
VPR
Parameter
External Creepage
≥7
External Clearance
≥7
mm
External Clearance (for Option W, 0.4” Lead Spacing)
≥ 10
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.4
TS
Case Temperature (Note 1)
175
°C
IS,INPUT
Input Current (Note 1)
400
mA
PS,OUTPUT
Output Power (Note 1)
700
mW
Insulation Resistance at TS, VIO = 500 V (Note 1)
1011
RIO
>
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the
safety ratings shall be ensured by means of protective circuits.
1. Safety limit values − maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified.
Value
Symbol
FOD814
Parameter
FOD817
Unit
TOTAL DEVICE
TSTG
Storage Temperature
TOPR
Operating Temperature
TJ
TSOL
JC
PTOT
−55 to +150
−55 to +105
°C
−55 to +110
Junction Temperature
−55 to +125
Lead Solder Temperature
260 for 10 s
Junction−to−Case Thermal Resistance
210
°C/W
Total Device Power Dissipation
200
mW
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FOD814, FOD817
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified. (continued)
Value
Symbol
Parameter
FOD814
FOD817
Unit
±50
50
mA
6
V
EMITTER
IF
Continuous Forward Current
VR
Reverse Voltage
PD
Power Dissipation
70
mW
Derate Above 100°C
1.7
mW/°C
VCEO
Collector−Emitter Voltage
70
V
VECO
Emitter−Collector Voltage
6
IC
Continuous Collector Current
50
mA
PC
Collector Power Dissipation
150
mW
Derate Above 90°C
2.9
mW/°C
DETECTOR
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified.
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol
Parameter
Device
Test Conditions
Min
Typ
Max
Unit
FOD814
IF = ±20 mA
−
1.2
1.4
V
FOD817
IF = 20 mA
−
1.2
1.4
Emmiter
VF
Forward Voltage
IR
Reverse Current
FOD817
VR = 4.0 V
−
−
10
A
Ct
Terminal Capacitance
FOD814
V = 0, f = 1 kHz
−
50
250
pF
−
30
250
−
−
100
−
−
100
70
−
−
70
−
−
6
−
−
6
−
−
FOD817
Detector
ICEO
Collector Dark Current
FOD814
VCE = 20 V, IF = 0
FOD817
BVCEO
BVECO
Collector−Emitter Breakdown
Voltage
FOD814
Emitter−Collector Breakdown
Voltage
FOD814
IC = 0.1 mA, IF = 0
FOD817
IE = 10 A, IF = 0
FOD817
nA
V
DC TRANSFER CHARACTERISTICS
Symbol
CTR
Parameter
Current Transfer Ratio (Note 2)
Device
Test Conditions
Min
Typ
Max
Unit
FOD814
IF = ±1 mA, VCE = 5 V
20
−
300
%
50
−
150
50
−
600
FOD817A
80
−
160
FOD817B
130
−
260
FOD817C
200
−
400
FOD817D
300
−
600
FOD814A
FOD817
VCE(SAT)
Collector−Emitter Saturation
Voltage
IF = 5 mA, VCE = 5 V
FOD814
IF = ±20 mA, IC = 1 mA
−
0.1
0.2
FOD817
IF = 20 mA, IC = 1 mA
−
0.1
0.2
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3
V
FOD814, FOD817
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. (continued)
AC TRANSFER CHARACTERISTICS
Parameter
Symbol
Device
Test Conditions
Min
Typ
Max
Unit
VCE = 5 V, IC = 2 mA,
RL = 100 Ω, −3 dB
15
80
−
kHz
−
4
18
s
−
3
18
fC
Cut−Off Frequency
FOD814
tr
Response Time (Rise)
FOD814,
FOD817
tf
Response Time (Fall)
FOD814,
FOD817
VCE = 2 V, IC = 2 mA,
RL = 100 (Note 3)
ISOLATION CHARACTERISTICS
Symbol
Device
Test Conditions
Min
Typ
Max
Unit
VISO
Input−Output Isolation Voltage
(Note 4)
Parameter
FOD814,
FOD817
f = 60 Hz, t = 1 min,
II−O ≤ 2 A
5000
−
−
VACRMS
RISO
Isolation Resistance
FOD814,
FOD817
VI−O = 500 VDC
5x1010
1x1011
−
CISO
Isolation Capacitance
FOD814,
FOD817
VI−O = 0, f = 1 MHz
−
0.6
1.0
pf
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Current Transfer Ratio (CTR) = IC / IF x 100%
3. For test circuit setup and waveforms, refer to page 5.
4. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
TYPICAL ELECTRICAL/OPTICAL CHARACTERISTICS CURVES
200
PC, Collector Power Dissipation (mW)
PC, Collector Power Dissipation (mW)
TA = 25°C unless otherwise specified.
150
100
50
0
−55 −40
−20
0
20
40
60
80
100
120
200
150
100
50
0
−55 −40
−20
0
20
40
60
80
100 120
TA, Ambient Temperature (5C)
TA, Ambient Temperature (5C)
Figure 3. Collector Power Dissipation vs.
Ambient Temperature (FOD814)
Figure 4. Collector Power Dissipation vs.
Ambient Temperature (FOD817)
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FOD814, FOD817
TYPICAL ELECTRICAL/OPTICAL CHARACTERISTICS CURVES
6
100
TA = 25°C
IC = 0.5 mA
5
TA = 105°C
1 mA
3 mA
4
IF, Forward Current (mA)
VCE(sat), Collector−Emitter Saturation
Voltage (V)
TA = 25°C unless otherwise specified. (continued)
5 mA
7 mA
3
2
1
0
0
2.5
5
7.5
10
12.5
75°C
50°C
10
25°C
0°C
−30°C
1
−55°C
0.1
0.5
15
1.0
IF, Forward Current (mA)
Figure 6. Forward Current vs. Forward Voltage
(FOD814)
140
Current Transfer Ratio CTR (%)
IF, Forward Current (mA)
100
TA = 110°C
75°C
50°C
25°C
0°C
−30°C
1
−55°C
0.1
0.5
1.0
1.5
VCE = 5 V
TA = 25°C
120
FOD817
100
FOD814
80
60
40
20
0
0.1
2.0
0.2
0.5
VF, Forward Voltage (V)
PC(max)
IF = 30 mA
20 mA
10 mA
20
5
10
30
TA = 25°C
30
2
20
50 100
Figure 8. Current Transfer Ratio vs. Forward
Current
IC, Collector Current (mA)
IC, Collector Current (mA)
40
1
IF, Forward Current (mA)
Figure 7. Forward Current vs. Forward Voltage
(FOD817)
50
2.0
VF, Forward Voltage (V)
Figure 5. Collector−Emitter Saturation Voltage
vs. Forward Current
10
1.5
5 mA
10
TA = 25°C
20 mA
IF = 30 mA
25
PC(max)
20
15
10 mA
10
5 mA
5
1 mA
0
0
10
20
30
40
50
60
70
80
0
90 100
0
10
20
30
40
50
60
70
VCE, Collector−Emitor Voltage (V)
VCE, Collector−Emitor Voltage (V)
Figure 9. Collector Current vs.
Collector−Emitor Voltage (FOD814)
Figure 10. Collector Current vs.
Collector−Emitor Voltage (FOD817)
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5
80
90
FOD814, FOD817
TYPICAL ELECTRICAL/OPTICAL CHARACTERISTICS CURVES
Relative Current Transfer Ratio (%)
160
VCE(sat), Collector−Emitter Saturation
Voltage (V)
TA = 25°C unless otherwise specified. (continued)
FOD814
IF = 1 mA
VCE = 5 v
140
120
100
80
60
FOD817
IF = 5 mA
VCE = 5 v
40
20
0
−60 −40
−20
0
20
40
60
80
0.10
IF = 20 mA
IC = 1 mA
0.08
0.06
0.04
0.02
0
−60 −40
100 120
−20
0
20
40
60
80
100 120
TA, Ambient Temperature (5C)
TA, Ambient Temperature (5C)
Figure 11. Relative Current Transfer Ratio vs.
Ambient Temperature
Figure 12. Collector−Emitter Saturation Voltage
vs. Ambient Temperature
100
100
PLED, Led Power Dissipation (mW)
PLED, Led Power Dissipation (mW)
0.12
80
60
40
20
0
−55 −40
−20
0
20
40
60
80
100
120
80
60
40
20
0
−55 −40
−20
0
20
40
60
80
100 120
TA, Ambient Temperature (5C)
TA, Ambient Temperature (5C)
Figure 13. Led Power Dissipation vs. Ambient
Temperature (FOD814)
Figure 14. Led Power Dissipation vs. Ambient
Temperature (FOD817)
VCE = 2 V
50 IC = 2 mA
TA = 25°C
20
tr
10
AV, Voltage Gain (dB)
Response Time (ms)
100
tf
td
5
2
ts
1
0.5
0
0.1
0.2
0.5
1
2
5
−20
10
100 k
−10
0.2
0.1
1 k
RL = 10 k
VCE = 2 V
IC = 2 mA
TA = 25°C
0.2
0.5
1.5 2
10
100
RL, Load Resistance (kW)
f, Frequency (kHz)
Figure 15. Response Time vs. Load Resistance
Figure 16. Frequency Response
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6
1000
FOD814, FOD817
TYPICAL ELECTRICAL/OPTICAL CHARACTERISTICS CURVES
TA = 25°C unless otherwise specified. (continued)
ICEO, Collector Dark Current (nA)
10000
VCE = 20 V
1000
100
10
1
0.1
0.01
−60 −40
−20
0
20
40
60
80
100
120
TA, Ambient Temperature (5C)
Figure 17. Collector Dark Current vs. Ambient
Temperature
Vcc
RD
Input
RL
Vcc
Input
Output
10%
Output
RD
90%
td
RL
Output
ts
tr
tf
Figure 18. Test Circuit for Response Time
Figure 19. Test Circuit for Frequency Response
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7
FOD814, FOD817
REFLOW PROFILE
260
TP
240
Temperature (5C)
220
TL
200
180
Max. Ramp−up Rate = 3°C/s
Max. Ramp−down Rate = 6°C/s
tP
Tsmax
tL
Preheat Area
160
Tsmin
140
ts
120
100
80
60
40
20
0
120
240
360
Time 25°C to Peak
Time (s)
Figure 20. Reflow Profile
REFLOW PROFILE
Profile Feature
Pb−Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60−120 s
Ramp−up Rate (tL to tP)
3°C/s max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60−150 s
Peak Body Package Temperature
260°C +0°C / −5°C
Time (tP) within 5°C of 260°C
30 s
Ramp−down Rate (TP to TL)
6°C/s max.
Time 25°C to Peak Temperature
8 min max.
ORDERING INFORMATION
Part Number
FOD817X
Package
Shipping†
DIP 4−Pin
Tube (100 units per tube)
FOD817XS
SMT 4−Pin (Lead Bend)
Tube (100 units per tube)
Tape and Reel (1,000 units per reel)
FOD817XSD
SMT 4−Pin (Lead Bend)
FOD817X300
DIP 4−Pin, DIN EN/IEC60747−5−5 option
Tube (100 units per tube)
FOD817X3S
SMT 4−Pin (Lead Bend), DIN EN/IEC60747−5−5 option
Tube (100 units per tube)
FOD817X3SD
SMT 4−Pin (Lead Bend), DIN EN/IEC60747−5−5 option
Tape and Reel (1,000 units per reel)
DIP 4−Pin, 0.4″ Lead Spacing, DIN EN/IEC60747−5−5 option
Tape and Reel (1,000 units per reel)
FOD817X300W
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NOTE: The product orderable part number system listed in this table also applies to the FOD814 products. ″X″ denotes the Current
Transfer Ratio (CTR) options.
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP4 4.6x6.5, 2.54P
CASE 646CA
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13453G
PDIP4 4.6X6.5, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP4 4.6x6.5, 2.54P
CASE 646CD
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13452G
PDIP4 4.6X6.5, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP4 GW
CASE 709AH
ISSUE A
DOCUMENT NUMBER:
DESCRIPTION:
98AON13454G
PDIP4 GW
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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