FOD817AS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series DESCRIPTION The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FEATURES 4 • Applicable to Pb-free IR reflow soldering • Compact 4-pin package • Current transfer ratio in selected groups: FOD817: 50-600% FOD817A: 80-160% FOD817B: 130-260% FOD817C: 200-400% FOD817D: 300-600% 1 FUNCTIONAL BLOCK DIAGRAM • C-UL, UL and VDE approved • High input-output isolation voltage of 5000 Vrms ANODE 1 4 COLLECTOR APPLICATIONS CATHODE 2 FOD817 Series • Power supply regulators • Digital logic inputs • Microprocessor inputs 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified.) Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation EMITTER Continuous Forward Current Reverse Voltage LED Power Dissipation Derate above 25°C Value Units TSTG TOPR TSOL PD -55 to +125 -30 to +100 260 for 10 sec 200 °C °C °C mW IF VR 50 6 70 0.93 mA V mW mW/°C 70 6 50 150 2.0 V V mA mW mW/°C PD DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Continuous Collector Current VCEO VECO IC Detector Power Dissipation Derate above 25°C © 2004 Fairchild Semiconductor Corporation Symbol PD Page 1 of 9 8/19/04 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions EMITTER Input Forward Voltage Reverse Leakage Current Terminal Capacitance DETECTOR Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Symbol Min Typ* Max Unit (IF = 20 mA) VF — 1.2 1.4 V (VR = 4.0 V) (V = 0, f = 1 kHz) IR Ct — – — 30 10 250 µA pF (IC = 0.1 mA, IF = 0) (IE = 10 µA, IF = 0) (VCE = 20 V, IF = 0) BVCEO BVECO ICEO 70 6 — — – – — – 100 V V nA *Typical values at TA = 25°C. TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.) DC Characteristic Test Conditions Current Transfer Ratio Symbol (IF = 5 mA, VCE = 5 V) (note 1) Collector-Emitter Saturation Voltage CTR Device Min Typ* Max Unit FOD817 50 — 600 % FOD817A 80 — 160 % FOD817B 130 — 260 % FOD817C 200 — 400 % FOD817D 300 — 600 % (IF = 20 mA, IC = 1 mA) VCE (SAT) — 0.1 0.2 V Rise Time (IC = 2 mA, VCE = 2 V, RL = 100Ω) (note 2) tr — 4 18 µs Fall Time (IC = 2 mA, VCE = 2 V, RL = 100Ω) (note 2) tf — 3 18 µs AC Characteristic ISOLATION CHARACTERISTICS Characteristic Input-Output Isolation Voltage (note 3) Isolation Resistance Isolation Capacitance Test Conditions Symbol Min f = 60Hz, t = 1 min VISO 5000 (VI-O = 500 VDC) RISO (VI-O = 0, f = 1 MHz) CISO 5x 1010 Typ* Max Units Vac(rms) 1011 0.6 Ω 1.0 pf *Typical values at TA = 25°C. NOTES 1. Current Transfer Ratio (CTR) = IC/IF x 100%. 2. For test circuit setup and waveforms, refer to page 4. 3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. © 2004 Fairchild Semiconductor Corporation Page 2 of 9 8/19/04 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series Typical Electrical/Optical Characteristic Curves (TA = 25°C Unless otherwise specified.) COLLECTOR POWER DISSIPATION PC (mW) Fig. 1 Forward Current vs. Ambient Temperature FORWARD CURRENT IF (mA) 60 50 40 30 20 10 0 -30 0 25 50 70 100 125 AMBIENT TEMPERATURE TA (°C) Fig. 3 Collector-Emitted Saturation Voltage vs. Forward Current 150 100 50 0 -30 0 25 50 70 100 125 AMBIENT TEMPERATURE TA (°C) Ta = 25°C FORWARD CURRENT IF (mA) 5m A 5 7m A 1m A 500 3m A COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 200 Fig. 4 Forward Current vs. Forward Voltage 6 4 3 2 1 Ta =75°C 50°C 200 25°C 0°C -25°C 100 50 20 10 5 2 1 0 0 5 10 0 15 1.0 1.5 2.0 2.5 3.0 FORWARD VOLTAGE VF (V) Fig. 5 Current Transfer Ratio vs. Forward Current Fig. 6 Collector Current vs. Collector-Emitter Voltage 200 30 VCE = 5V Ta = 25°C 180 160 140 120 100 80 60 40 20 0 0.5 FORWARD CURRENT IF (mA) COLLECTOR CURRENT IC (mA) CURRENT TRANSFER RATIO CTR ( %) Fig. 2 Collector Power Dissipation vs. Ambient Temperature 1 2 5 10 20 Ta = 25°C 20mA Pc(MAX.) 20 15 10mA 10 5m A 5 0 50 FORWARD CURRENT IF (mA) © 2004 Fairchild Semiconductor Corporation I IF = 30mA 25 0 1 2 3 4 5 6 7 8 9 COLLECTOR-EMITTER VOLTAGE VCE (V) Page 3 of 9 8/19/04 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series Typical Electrical/Optical Characteristic Curves (TA = 25°C Unless otherwise specified.) Fig. 8 Collector-Emitter Saturation Voltage vs. Ambient Temperature Fig. 7. Relative Current Transfer Ratio vs. Ambient Temperature IF = 5mA VCE = 5V 100 50 0 -30 0.16 IF = 20mA IC = 1mA 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -25 0 25 50 75 100 AMBIENT TEMPERATURE TA (°C) 0 25 50 75 100 AMBIENT TEMPERATURE TA (°C) Fig. 9 Collector Dark Current vs. Ambient Temperature Fig. 10. Response Time vs. Load Resistance 10-5 500 VCE = 20V 10-6 RESPONSE TIME (µs) COLLECTOR DARK CURRENT ICEO (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) RELATIVE CURRENT TRANSFER RATIO (%) 150 10-7 10-8 10-9 10-10 VCE = 2V 200 IC = 2mA Ta = 25°C 100 50 tr 20 tf 10 td 5 ts 2 1 0.5 10-11 -25 0.1 0.2 0.5 1 2 5 10 LOAD RESISTANCE RL (kΩ) Test Circuit for Response Time Fig. 11. Frequency Response VOLTAGE GAIN AV (dB) 0.2 0.05 0 25 50 75 100 AMBIENT TEMPERATURE TA (°C) VCE = 2V IC = 2mA Ta = 25°C 0 10 RL=10kΩ 1kΩ 100Ω 20 0.5 1 Test Circuit for Frequency Response 2 5 10 20 50 100 500 FREQUENCY f (kHz) © 2004 Fairchild Semiconductor Corporation Page 4 of 9 8/19/04 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series Package Dimensions (Through Hole) Package Dimensions (Surface Mount) SEATING PLANE 0.312 (7.92) 0.288 (7.32) 0.276 (7.00) 0.236 (6.00) 0.312 (7.92) 0.288 (7.32) 0.200 (5.10) 0.161 (4.10) SEATING PLANE 0.200 (5.10) 0.161 (4.10) 0.157 (4.00) 0.118 (3.00) 0.276 (7.00) 0.236 (6.00) 0.157 (4.00) 0.118 (3.00) 0.010 (0.26) 0.130 (3.30) 0.091 (2.30) 0.051 (1.30) 0.043 (1.10) 0.020 (0.51) TYP 0.010 (0.26) 0.150 (3.80) 0.110 (2.80) 0.300 (7.62) typ 0.110 (2.79) 0.090 (2.29) SEATING PLANE 0.412 (10.46) 0.388 (9.86) 0.110 (2.79) 0.090 (2.29) Lead Coplanarity 0.004 (0.10) MAX Footprint Dimensions (Surface Mount) 0.312 (7.92) 0.288 (7.32) 0.157 (4.00) 0.118 (3.00) 1.5 0.276 (7.00) 0.236 (6.00) 1.3 0.291 (7.40) 0.252 (6.40) 0.130 (3.30) 0.091 (2.30) 0.110 (2.80) 0.011 (1.80) 0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40) 0.024 (0.60) 0.004 (0.10) 0.024 (0.60) 0.016 (0.40) Package Dimensions (0.4” Lead Spacing) 0.200 (5.10) 0.161 (4.10) 0.049 (1.25) 0.030 (0.76) 9 0.010 (0.26) 0.110 (2.79) 0.090 (2.29) 2.54 NOTE All dimensions are in inches (millimeters) © 2004 Fairchild Semiconductor Corporation Page 5 of 9 8/19/04 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series ORDERING INFORMATION Option Order Entry Identifier Description S .S Surface Mount Lead Bend SD .SD Surface Mount; Tape and reel W .W 0.4" Lead Spacing 300 .300 VDE 0884 300W .300W VDE 0884, 0.4" Lead Spacing 3S .3S VDE 0884, Surface Mount 3SD .3SD VDE 0884, Surface Mount, Tape & Reel MARKING INFORMATION 4 5 V X ZZ Y 3 817 6 2 1 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code © 2004 Fairchild Semiconductor Corporation Page 6 of 9 8/19/04 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series Carrier Tape Specifications P2 Ø1.55±0.05 P0 1.75±0.1 F W P1 0.3±0.05 NOTE All dimensions are in millimeters Description Symbol Dimensions in mm (inches) Tape wide W 16 ± 0.3 (.63) Pitch of sprocket holes P0 4 ± 0.1 (.15) Distance of compartment F P2 7.5 ± 0.1 (.295) 2 ± 0.1 (.079) Distance of compartment to compartment P1 12 ± 0.1 (.472) © 2004 Fairchild Semiconductor Corporation Page 7 of 9 8/19/04 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series Lead Free recommended IR Reflow condition Temperature (°C) Tp Tsmax Ramp-down Tsmin 25°C Soldering zon ts (Preheat) Time (sec) Profile Feature Pb-Sn solder assembly Lead Free assembly Preheat condition (Tsmin-Tsmax / ts) 100°C ~ 150°C 60 ~ 120 sec 150°C ~ 200°C 60 ~120 sec Melt soldering zone 183°C 60 ~ 120 sec 217°C 30 ~ 90 sec Peak temperature (Tp) 240 +0/-5°C 250 +0/-5°C Ramp-down rate 6°C/sec max. 6°C/sec max. Recommended Wave Soldering condition Profile Feature For all solder assembly Peak temperature (Tp) © 2004 Fairchild Semiconductor Corporation Max 260°C for 10 sec Page 8 of 9 8/19/04 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. © 2004 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 9 of 9 8/19/04