FOD819SD

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FOD819 Series FOD819 4-Pin DIP High Speed Phototransistor Optocouplers Description www.onsemi.com The FOD819 consists of a gallium arsenide (GaAs) infra− red emitting diode, driving a high speed photo detector with integrated base−to−emitter resistor, RBE, in a 4−pin dual−in−line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission. Features • • • • • • High Speed Performance ~ 30 kHz Current Transfer Ratio: 100% to 600% Minimum BVCEO of 80 V Guaranteed Safety and Regulatory Approvals: UL1577, 5,000 VACRMS for 1 Minute DIN EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage DIP 4 PINS MARKING DIAGRAM Typical Applications • • • • • Digital Logic Inputs Microprocessor Inputs Power Supply Monitor Twisted Pair Line Receiver Telephone Line Receiver ON 1. 2. 3. 4 5. 6. ON 819 V X ZZ Y = Company Logo = Device Number = DIN EN/IEC60747−5−5 Option = One−Digit Year Code = Digit Work Week = Assembly Package Code PIN CONNECTIONS ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2017 July, 2018 − Rev. 2 1 Publication Order Number: FOD819/D FOD819 Series Safety and Insulation Ratings As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Table 1. SAFETY AND INSULATION RATINGS Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I–IV < 300 VRMS I–III Climatic Classification 55/115/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Table 2. Symbol Value Unit Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over−Voltage 8000 Vpeak ≥7 mm External Clearance ≥7 mm mm VPR Parameter External Creepage External Clearance (for Option W, 0.4” Lead Spacing) ≥ 10 DTI Distance Through Insulation (Insulation Thickness) ≥ 0.4 mm TS Case Temperature (Note 1) 175 °C IS,INPUT Input Current (Note 1) 400 mA PS,OUTPUT Output Power (Note 1) 700 mW RIO Insulation Resistance at TS, VIO = 500 V (Note 1) > 1011 Ω 1. Safety limit values – maximum values allowed in the event of a failure. Table 3. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit TOTAL PACKAGE TSTG Storage Temperature −55 to +125 °C TOPR Operating Temperature −55 to +110 °C Junction Temperature −55 to +125 °C 260 for 10 seconds °C Junction−to−Case Thermal Resistance 210 °C/W Total Device Power Dissipation 200 mW IF Continuous Forward Current 50 mA VR Reverse Voltage 6 V Power Dissipation 70 mW Derate Above 100°C 1.7 mW/°C TJ TSOL θJC PTOT Lead Solder Temperature EMITTER PD www.onsemi.com 2 FOD819 Series Table 3. ABSOLUTE MAXIMUM RATINGS (continued) Symbol Parameter Value Unit DETECTOR VCEO Collector−Emitter Voltage 80 V VECO Emitter−Collector Voltage 2 V Continuous Collector Current 30 mA Collector Power Dissipation 150 mW Derate Above 90°C 2.9 mW/°C IC PC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics Table 4. INDIVIDUAL COMPONENT CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 1.2 1.4 V 10 μA EMITTER VF Forward Voltage IF = 1.5 mA IR Reverse Current VR = 4.0 V Ct Terminal Capacitance V = 0, f = 1 kHz 30 pF DETECTOR Collector Dark Current VCE = 40 V, IF = 0 BVCEO Collector−Emitter Breakdown Voltage IC = 0.1 mA, IF = 0 80 150 V BVECO Emitter−Collector Breakdown Voltage IE = 0.1 mA, IF = 0 2 7 V IF = 1.5 mA, VCE = 5 V 100 ICEO 100 nA DC TRANSFER CHARACTERISTICS CTR VCE(SAT) IC(OFF) Current Transfer Ratio (Note 2) Saturation Voltage OFF−state collector current 600 % IF = 1.5 mA, IC = 0.2 mA 0.3 V VF = 0.7 V, VCE = 40 V 10 μA AC TRANSFER CHARACTERISTICS tR Rise Time (Saturated) tF Fall Time (Saturated) tPHL Propagation Delay Time High−to−Low tPLH Propagation Delay Time Low−to−High IF = 1.5 mA, VCC = 5 V, RL = 10 kΩ (Note 3) 12 μs 20 μs IF = 1.5 mA, VCC = 5 V, RL = 10 kΩ (Note 3) 9 30 μs 18 30 μs Typ. Max. Unit 2. Current Transfer Ratio (CTR) = IC / IF x 100%. 3. Refer to test circuit setup. Table 5. ISOLATION CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Parameter VISO Input−Output Isolation Voltage (Note 4) RISO Isolation Resistance CISO Isolation Capacitance Test Conditions Min. f = 60 Hz, t = 1 minutes, II−O ≤ 2 μA 5000 VACRMS VI−O = 500 VDC 1 x 1011 VI−O = 0, f = 1 MHz 0.6 4. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. www.onsemi.com 3 Ω 1.0 pf FOD819 Series PC − COLLECTOR POWER DISSIPATION (mW) PLED − LED POWER DISSIPATION (mW) Typical Performance Curves 100 80 60 40 20 0 −40 −20 0 20 40 60 80 100 120 200 150 100 50 0 −40 −20 TA - AMBIENT TEMPERATURE (°C) VCE − COLLECTOR−EMITTER VOLTAGE (V) IF − FORWARD CURRENT (mA) 100 TA = 110 °C 75 °C 50 °C 25 °C 0 °C -30 °C 1 -40 °C -55 °C 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 80 100 120 TA = 25 °C 1 mA 3 mA 4 5 mA 7 mA 3 2 1 0 0.0 2.5 5.0 7.5 10.0 12.5 15.0 IF − FORWARD CURRENT (mA) Figure 4. Collector-Emitter Voltage vs. Forward Current RELATIVE CURRENT TRANSFER RATIO (%) CTR − CURRENT TRANSFER RATION (%) 60 IC = 0.5 mA 5 Figure 3. Forward Current vs. Forward Voltage 500 VCE = 5 V TA = 25 °C 400 300 200 100 0 10 40 6 VF − FORWARD VOLTAGE (V) 1 20 Figure 2. Collector Power Dissipation vs. Ambient Temperature Figure 1. LED Power Dissipation vs. Ambient Temperature 10 0 TA - AMBIENT TEMPERATURE (°C) 100 180 VCE = 5 V 160 IF = 1.5 mA 140 120 100 80 60 40 20 0 −40 −20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) IF − FORWARD CURRENT (mA) Figure 5. Current Transfer Ratio vs. Forward Current Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature www.onsemi.com 4 120 FOD819 Series IF = 30 mA 30 TA = 25 °C 20 mA 10 mA 5 mA 20 10 1.5 mA SATURATION VOLTAGE (V) 0.30 PC (MAX) VCE(SAT) − COLLECTOR−EMITTER IC − COLLECTOR CURRENT (mA) 40 0 0 2 4 6 8 0.25 0.20 IF = 8 mA, IC = 2.4 mA 0.15 IF = 1.5 mA, IC = 0.2 mA 0.10 0.05 0.00 −40 10 −20 100 tP - PROPAGATION DELAY TIME (μs) 100 VCE = 40 V 10 1 0.1 0.01 1000 −20 0 20 40 60 80 100 40 60 80 100 IF = 1.5 mA RL = 10 kΩ Frequency = 1 kHz tPHL 10 tPLH −20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) TA - AMBIENT TEMPERATURE (°C) Figure 9. Collector Dark Current vs. Ambient Temperature Figure 10. Propagation Delay vs. Ambient Temperature 100 IF = 1.5 mA RL = 10 kΩ Frequency = 1 kHz 100 tR 10 tF −20 0 20 40 60 80 120 VCC = 5 V 1 −40 120 VCC = 5 V 1 −40 20 Figure 8. Collector-Emitter Saturation Voltage vs. Ambient Temperature tP - PROPAGATION DELAY TIME (μs) tR / tF - SATURATED RISE/FALL TIME (μs) ICEO − COLLECTOR DARK CURRENT (nA) Figure 7. Collector Current vs. Collector-Emitter Voltage 0.001 −40 0 TA - AMBIENT TEMPERATURE (°C) VCE − COLLECTOR−EMITTER VOLTAGE (V) 100 VCC = 5 V IF = 2 mA RL = 10 kΩ Frequency = 10 kHz tPLH 10 tPHL 1 −40 120 −20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) TA - AMBIENT TEMPERATURE (°C) Figure 11. Saturated Rise / Fall Time vs. Ambient Temperature Figure 12. Propagation Delay vs. Ambient Temperature www.onsemi.com 5 120 120 100 100 VCC = 5 V tP - PROPAGATION DELAY TIME (μs) tR / tF - SATURATED RISE/FALL TIME (μs) FOD819 Series IF = 2 mA RL = 10 kΩ Frequency = 10 kHz tF 10 tR 1 −40 VCC = 5 V IF = 1.5 mA TA = 25 °C Frequency = 1 KHz tPLH tPHL 10 1 −20 0 20 40 60 80 100 120 1 10 100 TA - AMBIENT TEMPERATURE (°C) RL - LOAD RESISTANCE (k ) Figure 13. Collector Dark Current vs. Ambient Temperature Figure 14. Propagation Delay vs. Ambient Temperature Test Circuit VCC RL PW = 1ms Duty Cycle = 50% 1 VO 4 IF tR tF VO 90% IF Monitor 2 3 2V 10% RM t PHL Figure 15. Test Circuit for Response Time t PLH Figure 16. Timing Diagram www.onsemi.com 6 FOD819 Series Reflow Profile Figure 17. Reflow Profile Table 6. Profile Freature Pb−Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp−up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp−down Rate (TP to TL) 6°C / second max. Time 25°C to Peak Temperature 8 minutes max. Table 7. ORDERING INFORMATION Part Number Package Packing Method † FOD819 DIP 4−Pin Tube (100 units per tube) FOD819S SMT 4−Pin (Lead Bend) Tube (100 units per tube) FOD819SD SMT 4−Pin (Lead Bend) Tape and Reel (1,000 units per reel) FOD819300 DIP 4−Pin, DIN EN/IEC60747−5−5 option Tube (100 units per tube) FOD8193S SMT 4−Pin (Lead Bend), DIN EN/IEC60747−5−5 option Tube (100 units per tube) FOD8193SD SMT 4−Pin (Lead Bend), DIN EN/IEC60747−5−5 option Tape and Reel (1,000 units per reel) FOD819300W DIP 4−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 option Tube (100 units per tube) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. www.onsemi.com 7 FOD819 Series PACKAGE DIMENSIONS PDIP4 4.6 x 6.5, 2.54P CASE 646CD ISSUE O www.onsemi.com 8 FOD819 Series PDIP4 4.6 x 6.5, 2.54P CASE 646CA ISSUE O www.onsemi.com 9 FOD819 Series PDIP4 GW CASE 709AH ISSUE A www.onsemi.com 10 FOD819 Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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