FOD8523S

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FOD852 4-Pin DIP Photodarlington Output Optocoupler Features Description • High Current Transfer Ratio: 1000% Minimum • Safety and Regulatory Approvals – UL1577, 5,000 VACRMS for 1 Minute – DIN EN/IEC60747-5-5 The FOD852 consists of gallium arsenide infrared emitting diode driving a silicon photodarlington output (with integral base-emitter resistor) in a 4-pin dual in-line package. Applications • Power Supply Regulators • Digital Logic Inputs • Microprocessor Inputs Functional Block Diagram ANODE 1 4 COLLECTOR 4 CATHODE 2 3 EMITTER 1 Figure 1. Schematic ©2006 Fairchild Semiconductor Corporation FOD852 Rev. 1.5 Figure 2. Package Outlines www.fairchildsemi.com FOD852 — 4-Pin DIP Photodarlington Output Optocoupler May 2017 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics < 150 VRMS Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage I–IV I–III < 300 VRMS Climatic Classification 30/110/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1560 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage VPR DTI TS IS,INPUT Parameter 6000 Vpeak External Creepage 7 mm External Clearance 7 mm  0.4 mm Distance Through Insulation (Insulation Thickness) Case Temperature(1) Input Current(1) PS,OUTPUT Output Power(1) RIO Insulation Resistance at TS, VIO = 500 V(1) 175 °C 400 mA 700 mW > 1011  Note: 1. Safety limit values – maximum values allowed in the event of a failure. ©2006 Fairchild Semiconductor Corporation FOD852 Rev. 1.5 www.fairchildsemi.com 2 FOD852 — 4-Pin DIP Photodarlington Output Optocoupler Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C Unless otherwise specified. Symbol Parameter Value Units Total Device TSTG Storage Temperature -55 to +125 °C TOPR Operating Temperature -30 to +100 °C Junction Temperature -55 to +100 °C TJ TSOL Lead Solder Temperature 260 for 10 seconds °C PTOT Total Device Power Dissipation 200 mW IF Continuous Forward Current 50 mA VR Reverse Voltage 6 V PD LED Power Dissipation 70 mW VCEO Collector-Emitter Voltage 300 V VECO Input Output Emitter-Collector Voltage 0.1 V IC Continuous Collector Current 150 mA PC Collector Power Dissipation 150 mW ©2006 Fairchild Semiconductor Corporation FOD852 Rev. 1.5 www.fairchildsemi.com 3 FOD852 — 4-Pin DIP Photodarlington Output Optocoupler Absolute Maximum Ratings Individual Component Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit 1.2 1.4 V 10 µA 250 pF 200 nA Input VF Forward Voltage IF = 10 mA IR Reverse Current VR = 4 V Ct Terminal Capacitance V = 0, f = 1 kHz 30 Output Collector Dark Current VCE = 200 V, IF = 0 BVCEO Collector-Emitter Breakdown Voltage IC = 0.1 mA, IF = 0 300 V BVECO Emitter-Collector Breakdown Voltage IE = 10 µA, IF = 0 0.1 V ICEO Transfer Characteristics Symbol IC CTR DC Characteristic Test Conditions Collector Current (2) Current Transfer Ratio IF = 1 mA, VCE = 2 V VCE(SAT) Collector-Emitter Saturation Voltage IF = 20 mA, IC = 100 mA fC Cut-Off Frequency VCE = 2 V, IC = 20 mA, RL = 100 , -3 dB tR Response Time (Rise) tF Response Time (Fall) Min. Typ. Max. Unit 10 40 150 mA 1,000 4,000 15,000 % 1.2 V 1 VCE = 2 V, IC = 20 mA, RL = 100  7 kHz 100 300 µs 20 100 µs Isolation Characteristics Symbol Characteristic Test Conditions Min. Typ. VISO Input-Output Isolation Voltage f = 60 Hz, t = 1 minute, II-O  2 µA RISO Isolation Resistance VI-O = 500 VDC 1012 CISO Isolation Capacitance VI-O = 0, f = 1 MHz 0.6 Max. 5000 Units VACRMS  1.0 pf Note: 2. Current Transfer Ratio (CTR) = IC / IF x 100%. ©2006 Fairchild Semiconductor Corporation FOD852 Rev. 1.5 www.fairchildsemi.com 4 FOD852 — 4-Pin DIP Photodarlington Output Optocoupler Electrical Characteristics TA = 25°C unless otherwise specified. COLLECTOR POWER DISSIPATION PC (mW) TA = 25°C unless otherwise specified. FORWARD CURRENT IF (mA) 60 50 40 30 20 10 0 -30 0 25 50 75 100 125 AMBIENT TEMPERATURE TA (°C) 200 150 100 50 0 -30 5 Figure 4. Collector Power Dissipation vs. Ambient Temperature 100 Ic =5 mA 10 mA 30 mA 50 mA 70 mA 100 mA 4. 5 4 3. 5 3 FORWARD CURRENT IF (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Figure 3. Forward Current vs. Ambient Temperature 0 20 40 60 80 100 AMBIENT TEMPERATURE TA (°C) 2. 5 2 1. 5 1 100°C 20°C 60°C 10 0. 5 0 1 1 0 2 3 4 5 0. 5 0.7 FORWARD CURRENT IF (mA) 0.9 1. 3 1.5 1. 7 1.9 Figure 6. Forward Current vs. Forward Voltage 100 7000 VCE = 2 V 2. 5 mA COLLECTOR CURRENT IC (mA) 10 mA 6000 5000 4000 3000 2000 1000 0 0. 1 1.1 FORWARD VOLTAGE VF (V) Figure 5. Collector-Emitted Saturation Voltage vs. Forward Current CURRENT TRANSFER RATIO CTR ( %) 40 °C 80°C 80 2 mA 5 mA 3 mA 1. 5 mA 60 1 mA PC (M AX.) 40 20 IF = 0.5 mA 0 1 0 10 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD CURRENT IF (mA) Figure 8. Collector Current vs. Collector-Emitter Voltage Figure 7. Current Transfer Ratio vs. Forward Current ©2006 Fairchild Semiconductor Corporation FOD852 Rev. 1.5 1 www.fairchildsemi.com 5 FOD852 — 4-Pin DIP Photodarlington Output Optocoupler Typical Electrical/Optical Characteristic Curves COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) TA = 25°C unless otherwise specified. RELATIVE CURRENT TRANSFER RATIO (%) 1.0 IF = 1 mA VCE = 2 V 0.8 0.6 0.4 0.2 0 20 IF = 20 mA IC = 100 mA 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 20 40 60 80 100 AMBIENT TEMPERATURE TA (°C) 40 60 80 100 AMBIENT TEMPERATURE TA (°C) Figure 10. Collector-Emitter Saturation Voltage vs. Ambient Temperature Figure 9. Relative Current Transfer Ratio vs. Ambient Temperature 1000 1000 VCE = 200 V VCE = 2 V 500 I = 20 mA C RESPONSE TIME (μs) COLLECTOR DARK CURRENT ICEO (nA) 1.20 100 tr 200 100 tf 50 td ts 20 10 5 2 1 10 20 40 60 80 100 AMBIENT TEMPERATURE TA (°C) 0.1 Figure 11. Collector Dark Current vs. Ambient Temperature 10 Figure 12. Response Time vs. Load Resistance VCE = 2V IC = 2mA 0 VOLTAGE GAIN AV (dB) 1 LOAD RESISTANCE RL (kΩ) -5 -10 -15 RL=1kΩ 100Ω 10Ω -20 -25 0.1 1 10 100 FREQUENCY f (kHz) 500 Figure 13. Frequency Response ©2006 Fairchild Semiconductor Corporation FOD852 Rev. 1.5 www.fairchildsemi.com 6 FOD852 — 4-Pin DIP Photodarlington Output Optocoupler Typical Electrical/Optical Characteristic Curves (Continued) FOD852 — 4-Pin DIP Photodarlington Output Optocoupler Test Circuits Vcc Input RD Input Output RL 10% Output 90% ts td tr tf Figure 14. Test Circuit for Response Time Vcc RL RD Output Figure 15. Test Circuit for Frequency Response ©2006 Fairchild Semiconductor Corporation FOD852 Rev. 1.5 www.fairchildsemi.com 7 FOD852 — 4-Pin DIP Photodarlington Output Optocoupler Reflow Profile Temperature (°C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25°C to Peak Time (seconds) Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max. Time 25°C to Peak Temperature 8 minutes max. Figure 16. Reflow Profile ©2006 Fairchild Semiconductor Corporation FOD852 Rev. 1.5 www.fairchildsemi.com 8 Part Number Package Packing Method FOD852 DIP 4-Pin Tube (100 units per tube) FOD852S SMT 4-Pin (Lead Bend) Tube (100 units per tube) FOD852SD SMT 4-Pin (Lead Bend) Tape and Reel (1,000 units per reel) FOD852300 DIP 4-Pin, DIN EN/IEC60747-5-5 option Tube (100 units per tube) FOD8523S SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option Tube (100 units per tube) FOD8523SD SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option Tape and Reel (1,000 units per reel) FOD852300W DIP 4-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 option Tube (100 units per tube) Marking Information 4 5 V X ZZ Y 3 852 6 2 1 Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on parts ordered with this option) 4 One-Digit Year Code, e.g., ‘5’ 5 Two-Digit Work Week, Ranging from ‘01’ to ‘53’ 6 Assembly Package Code Y = Manufactured in Thailand YA = Manufactured in China ©2006 Fairchild Semiconductor Corporation FOD852 Rev. 1.5 www.fairchildsemi.com 9 FOD852 — 4-Pin DIP Photodarlington Output Optocoupler Ordering Information P2 Ø1.55±0.05 P0 1.75±0.1 F W B0 A0 P1 0.3±0.05 K0 Figure 17. Carrier Tape Specification Symbol Description Dimensions in mm (inches) W Tape wide 16 ± 0.3 (0.63) P0 Pitch of sprocket holes F P2 Distance of compartment 7.5 ± 0.1 (0.295) 2 ± 0.1 (0.079) P1 Distance of compartment to compartment 12 ± 0.1 (0.472) A0 Compartment 4 ± 0.1 (0.15) 10.45 ± 0.1 (0.411) B0 5.30 ± 0.1 (0.209) K0 4.25 ± 0.1 (0.167) ©2006 Fairchild Semiconductor Corporation FOD852 Rev. 1.5 www.fairchildsemi.com 13 FOD852 — 4-Pin DIP Photodarlington Output Optocoupler Carrier Tape Specifications ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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