FODM217A

DATA SHEET www.onsemi.com Single Channel, AC/DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package MFP4 2.5x4.4, 1.27P CASE 100AL FODM214, FODM217 Series MARKING DIAGRAM The FODM217 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. The FODM214 series consist of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. Both were built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 1.27 mm. Features • Current Transfer Ratio Ranges from 20 to 600% • • at IF = ±1 mA, VCE = 5 V, TA = 25°C ♦ FODM214 − 20 to 400% ♦ FODM214A − 50 to 250% at IF = 5 mA, VCE = 5 V, TA = 25°C ♦ FODM217A − 80 to 160% ♦ FODM217B − 130 to 260% ♦ FODM217C − 200 to 400% ♦ FODM217D − 300 to 600% Safety and Regulatory Approvals: ♦ UL1577, 3750 VACRMS for 1 min ♦ DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage Applicable to Infrared Ray Reflow, 260°C 1. 2. 3. 4. 5. 6. ON 21xx V X YY R1 = Corporate Logo = Device Number = DIN EN/IEC60747−5−5 Option = One−Digit Year Code = Digit Work Week = Assembly Package Code PIN CONNECTIONS Typical Applications • • • • • Primarily Suited for DC−DC Converters For Ground Loop Isolation, Signal to Noise Isolation Communications – Adapters, Chargers Consumer – Appliances, Set Top Boxes Industrial – Power Supplies, Motor Control, Programmable Logic Control ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2018 December, 2021 − Rev. 3 1 Publication Order Number: FODM214/D FODM214, FODM217 Series SAFETY AND INSULATIONS RATING As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–III Climatic Classification 55/110/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol VPR Parameter Value Unit Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak 565 Vpeak 4,000 Vpeak External Creepage ≥5 mm External Clearance ≥5 mm VIORM Maximum Working Insulation Voltage VIOTM Highest Allowable Over−Voltage DTI Distance Through Insulation (Insulation Thickness) ≥ 0.4 mm TS Case Temperature (Note 1) 150 °C IS,INPUT Input Current (Note 1) 200 mA PS,OUTPUT Output Power (Note 1) 300 mW > 109 W RIO Insulation Resistance at TS, VIO = 500 V (Note 1) 1. Safety limit values – maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified.) Parameter Symbol Value Units TSTG Storage Temperature −55 to +150 °C TOPR Operating Temperature −55 to +110 °C TJ −55 to +125 °C 260 for 10 sec °C Continuous Forward Current 50 mA Peak Forward Current (1 ms pulse, 300 pps) 1 A Reverse Input Voltage 6 V Power Dissipation (Note 2) 70 mW Continuous Collector Current 50 mA VCEO Collector−Emitter Voltage 80 V VECO Emitter−Collector Voltage 7 V PDC Collector Power Dissipation (Note 2) 150 mW TSOL Junction Temperature Lead Solder Temperature (Refer to Reflow Temperature Profile) EMITTER IF(average) IF(peak) VR PDLED DETECTOR IC(average) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. www.onsemi.com 2 FODM214, FODM217 Series ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified Symbol Parameter Device Conditions Min. Typ. Max. 1.2 1.4 Units EMITTER VF Forward Voltage IR Reverse Current CT Terminal Capacitance FODM214 IF = ±20 mA FODM217 IF = 20 mA FODM217 VR = 4 V All V = 0 V, f = 1 kHz 30 V 10 mA 250 pF DETECTOR BVCEO Collector−Emitter Breakdown Voltage All IC = 0.1 mA, IF = 0 mA 80 V BVECO Emitter−Collector Breakdown Voltage All IE = 10 mA, IF = 0 mA 7 V Collector Dark Current All VCE = 50 V, IF = 0 mA ICEO 100 nA Max. Units 20 400 % 50 250 80 160 FODM217B 130 260 FODM217C 200 400 FODM217D 300 600 TRANSFER CHARACTERISTICS TA=25°C unless otherwise specified Symbol CTRCE Parameter Current Transfer Ratio (collector−emitter) Device Conditions IF = ±1 mA, VCE = 5 V FODM214 FODM214A IF = 5 mA, VCE = 5 V FODM217A IC CTR(SAT) IC(SAT) VCE(SAT) Collector Current Saturated Current Transfer Ratio Collector Current Collector−Emitter Saturation Voltage Min. Typ. FODM214 IF = ±1 mA, VCE = 5 V 0.2 2.5 FODM217 IF = 5 mA, VCE = 5 V 4 30 FODM214 IF = ±8 mA, VCE = 0.4 V FODM217 IF = 8 mA, VCE = 0.4 V FODM214 IF = ±8 mA, VCE = 0.4 V FODM217 IF = 8 mA, VCE = 0.4 V FODM214 IF = ±8 mA, IC = 2.4 mA FODM217 IF = 8 mA, IC = 2.4 mA mA % 60 mA 4.8 0.4 V SWITCHING CHARACTERISTICS TA = 25°C unless otherwise specified Symbol Parameter tON Turn On Time IC = 2 mA, VCE = 10 V, RL = 100 W 3 ms tOFF Turn Off Time IC = 2 mA, VCE = 10 V, RL = 100 W 3 ms tR Output Rise Time (10%−90%) IC = 2 mA, VCE = 10 V, RL = 100 W 3 ms tF Output Fall Time (90%−10%) IC = 2 mA, VCE = 10 V, RL = 100 W 3 ms Conditions Min. Typ. Max. Units ISOLATION CHARACTERISTICS Symbol Parameter Conditions Min. 3,750 VISO Input−Output Isolation Voltage Freq = 60 Hz, t = 1.0 min, II−O v 10 mA (Note 3, 4) RISO Isolation Resistance VI−O = 500 V (Note 3) CISO Isolation Capacitance Frequency = 1 MHz Typ. 3 Units VACRMS 5 x 1010 W 0.6 3. Device is considered a two terminal device: Pin 1 and 2 are shorted together and Pins 3 and 4 are shorted together. 4. 3,750 VACRMS for 1 minute duration is equivalent to 4,500 VACRMS for 1 second duration. www.onsemi.com Max. 1.0 pF FODM214, FODM217 Series TYPICAL CHARACTERISTICS PDLED, LED POWER DISSIPATION (mW) 160 PDC, COLLECTOR POWER DISSIPATION (mW) 140 120 100 80 60 40 20 0 0 25 50 75 100 125 60 40 20 0 0 50 75 100 125 TA, AMBIENT TEMPERATURE (5C) Figure 1. Collector Power Dissipation vs. Ambient Temperature Figure 2. LED Power Dissipation vs. Ambient Temperature DVF/DTA, FORWARD VOLTAGE TEMPERATURE COEFFICIENT (mV/5C) −2.4 75°C 110°C -55°C 10 25°C 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 −2.0 −1.6 −1.2 −0.8 −0.4 1 2.0 VF, FORWARD VOLTAGE (V) 100 Figure 4. Forward Voltage Temperature Coefficient vs. Forward Current 5 IC, COLLECTOR CURRENT (mA) 30 0.5 mA 4 1 mA 3 mA 3 5 mA 7 mA 10 mA 2 1 0 10 IF, FORWARD CURRENT (mA) Figure 3. Forward Current vs. Forward Voltage VCE, COLLECTOR−EMITTER VOLTAGE (V) 25 TA, AMBIENT TEMPERATURE (5C) 100 IF, FORWARD CURRENT (mA) 80 0 5 10 15 25 15 10 5 0 20 FODM217 IF = 5 mA 20 FODM214 IF = 1 mA 0 5 10 IF, FORWARD CURRENT (mA) VCE, COLLECTOR−EMITTER CURRENT (V) Figure 5. Collector Emitter Voltage vs. Forward Current Figure 6. Collector Current vs. Collector−Emitter Voltage www.onsemi.com 4 FODM214, FODM217 Series 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR−CURRENT (mA) 30 25 20 FODM217 IF = 5 mA 15 10 5 FODM214 IF = 1 mA 0 0.0 0.5 CTR − CURRENT TRANSFER RATIO (%) ICEO, COLLECTOR DARK CURRENT (A) 0.01 0.1 Figure 8. Collector Current vs. Forward Current 24 V 1E−8 5V 1E−9 10 V 1E−10 0 25 50 75 1000 10 V 5V VCE= 0.4 V 100 10 0.0001 100 0.001 0.01 0.1 TA, AMBIENT TEMPERATURE (5C) IF, FORWARD CURRENT (A) Figure 9. Collector Dark Current vs. Ambient Temperature Figure 10. Current Transfer Ratio vs. Forward Current 0.18 100 0.16 IC, COLLECTOR CURRENT (mA) VCE(SAT), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.001 Figure 7. Collector Current vs. Small Collector−Emitter Voltage 1E−7 0.14 IF = 8 mA IC = 2.4 mA 0.08 IF = 1 mA 0.06 IC = 0.2 mA 0.04 IF = 20 mA 0.02 IC = 1 mA 0.00 −25 0.001 IF, FORWARD CURRENT (A) VCE= 48 V 0.10 VCE = 0.4 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 1E−6 0.12 5V 0.01 0.0001 0.0001 1.0 1E−5 1E−11 −25 10 V 0 25 50 75 20 mA 10 mA 10 1 1 mA IF = 0.5 mA 0.1 −25 100 5 mA 0 25 50 75 TA, AMBIENT TEMPERATURE (5C) TA, AMBIENT TEMPERATURE (5C) Figure 11. Collector−Emitter Saturation vs. Ambient Temperature Figure 12. Collector Current vs. Ambient Temperature www.onsemi.com 5 100 FODM214, FODM217 Series 1000 100 VCC = 10 V TA = 25 °C IF = 16 mA 100 IC = 2 mA RL = 100 W tOFF t, SWITCHING TIME (ms) t, SWITCHING TIME (ms) VCC= 5 V tF 10 tON 1 tON tOFF 10 tR tF tR 0.1 1 10 1 −25 100 0 25 50 75 100 RL, LOAD RESISTANCE (kW) TA, AMBIENT REMPERATURE (5C) Figure 13. Switching Time vs. Load Resistance Figure 14. Switching Time vs. Ambient Temperature TEST CIRCUIT VCC RL 1 VO 4 IF tR VO IF Monitor 2 tF 90% 3 10% RM tON Figure 15. Test Circuit for Switching Time www.onsemi.com 6 tOFF FODM214, FODM217 Series REFLOW PROFILE Figure 16. Reflow Profile Profile Freature Pb−Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp−up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp−down Rate (TP to TL) 6°C/second max. Time 25°C to Peak Temperature 8 minutes max. ORDERING INFORMATION (Note 5) Part Number Package Packing Method FODM214A SOP 4−Pin Tube (100 units) FODM214AR2 SOP 4−Pin Tape and Reel (3000 units) FODM214AV SOP 4−Pin, DIN EN/IEC60747−5−5 Option Tube (100 units) FODM214AR2V SOP 4−Pin, DIN EN/IEC60747−5−5 Option Tape and Reel (3000 units) 5. The product orderable part number system listed in this table also applies to the FODM214, FODM217A, FODM217B, FODM217C, and FODM217D products. www.onsemi.com 7 FODM214, FODM217 Series PACKAGE DIMENSIONS MFP4 2.5x4.4, 1.27P CASE 100AL ISSUE O 0.3−0.51 PIN ONE 0.61 1.52 1 3 0.55−0.75 4.83 7.87 4.40 (Typ) 6.30−7.29 2 4 2.31−2.69 1.27 2.39 (Max) 1.95−2.11 0−0.20 LAND PATTERN RECOMMENDATION R0.15 (Typ) 2̇\:̇ R0.15 (Typ) 1.27+/− .127 0.30−0.89 1.19 (Typ) NOTES: A) NO STANDARD APPLIES TO THIS PACKAGE B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSION www.onsemi.com 8 0.18−0.25 FODM214, FODM217 Series onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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