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product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FODM214, FODM217 Series
Single Channel, AC/DC
Sensing Input,
Phototransistor
Optocoupler In Half-Pitch
Mini-Flat 4-Pin Package
www.onsemi.com
The FODM217 series consist of a gallium arsenide infrared emitting
diode driving a phototransistor. The FODM214 series consist of two
gallium arsenide infrared emitting diodes connected in inverse parallel
for AC operation. Both were built in a compact, half−pitch, mini−flat,
4−pin package. The lead pitch is 1.27 mm.
MFP4 2.5x4.4, 1.27P
CASE TBD
Features
• Current Transfer Ratio Ranges from 20 to 600%
•
•
at IF = ±1 mA, VCE = 5 V, TA = 25°C
♦ FODM214 − 20 to 400%
♦ FODM214A − 50 to 250%
at IF = 5 mA, VCE = 5 V, TA = 25°C
♦ FODM217A − 80 to 160%
♦ FODM217B − 130 to 260%
♦ FODM217C − 200 to 400%
♦ FODM217D − 300 to 600%
Safety and Regulatory Approvals:
♦ UL1577, 3750 VACRMS for 1 min
♦ DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
Applicable to Infrared Ray Reflow, 260°C
Typical Applications
•
•
•
•
•
Primarily Suited for DC−DC Converters
For Ground Loop Isolation, Signal to Noise Isolation
Communications – Adapters, Chargers
Consumer – Appliances, Set Top Boxes
Industrial – Power Supplies, Motor Control, Programmable Logic
Control
MARKING DIAGRAM
1.
2.
3.
4.
5.
6.
ON
21xx
V
X
YY
R1
= Corporate Logo
= Device Number
= DIN EN/IEC60747−5−5 Option
= One−Digit Year Code
= Digit Work Week
= Assembly Package Code
PIN CONNECTIONS
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
August, 2019 − Rev. 2
1
Publication Order Number:
FODM214/D
FODM214, FODM217 Series
SAFETY AND INSULATIONS RATING
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
< 150 VRMS
I–IV
< 300 VRMS
I–III
Climatic Classification
55/110/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
175
Symbol
VPR
Parameter
Value
Unit
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
904
Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1060
Vpeak
565
Vpeak
4,000
Vpeak
External Creepage
≥5
mm
External Clearance
≥5
mm
VIORM
Maximum Working Insulation Voltage
VIOTM
Highest Allowable Over−Voltage
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.4
mm
TS
Case Temperature (Note 1)
150
°C
IS,INPUT
Input Current (Note 1)
200
mA
PS,OUTPUT
Output Power (Note 1)
300
mW
> 109
W
RIO
Insulation Resistance at TS, VIO = 500 V (Note 1)
1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified.)
Symbol
Parameter
Value
Units
TSTG
Storage Temperature
−55 to +150
°C
TOPR
Operating Temperature
−55 to +110
°C
TJ
−55 to +125
°C
260 for 10 sec
°C
Continuous Forward Current
50
mA
Peak Forward Current (1 ms pulse, 300 pps)
1
A
Reverse Input Voltage
6
V
Power Dissipation (Note 2)
70
mW
Continuous Collector Current
50
mA
VCEO
Collector−Emitter Voltage
80
V
VECO
Emitter−Collector Voltage
7
V
PDC
Collector Power Dissipation (Note 2)
150
mW
TSOL
Junction Temperature
Lead Solder Temperature
(Refer to Reflow Temperature Profile)
EMITTER
IF(average)
IF(peak)
VR
PDLED
DETECTOR
IC(average)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
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2
FODM214, FODM217 Series
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified
Symbol
Parameter
Device
Conditions
Min.
Typ.
Max.
1.2
1.4
Units
EMITTER
VF
Forward Voltage
IR
Reverse Current
CT
Terminal Capacitance
FODM214
IF = ±20 mA
FODM217
IF = 20 mA
FODM217
VR = 4 V
All
V = 0 V, f = 1 kHz
30
V
10
mA
250
pF
DETECTOR
BVCEO
Collector−Emitter Breakdown Voltage
All
IC = 0.1 mA, IF = 0 mA
80
V
BVECO
Emitter−Collector Breakdown Voltage
All
IE = 10 mA, IF = 0 mA
7
V
Collector Dark Current
All
VCE = 50 V, IF = 0 mA
ICEO
100
nA
Max.
Units
20
400
%
50
250
80
160
FODM217B
130
260
FODM217C
200
400
FODM217D
300
600
TRANSFER CHARACTERISTICS TA=25°C unless otherwise specified
Symbol
CTRCE
Parameter
Current Transfer Ratio
(collector−emitter)
Device
Conditions
IF = ±1 mA, VCE = 5 V
FODM214
FODM214A
IF = 5 mA, VCE = 5 V
FODM217A
IC
CTR(SAT)
IC(SAT)
VCE(SAT)
Collector Current
Saturated Current Transfer Ratio
Collector Current
Collector−Emitter Saturation Voltage
Min.
Typ.
FODM214
IF = ±1 mA, VCE = 5 V
0.2
2.5
FODM217
IF = 5 mA, VCE = 5 V
4
30
FODM214
IF = ±8 mA, VCE = 0.4 V
FODM217
IF = 8 mA, VCE = 0.4 V
FODM214
IF = ±8 mA, VCE = 0.4 V
FODM217
IF = 8 mA, VCE = 0.4 V
FODM214
IF = ±8 mA, IC = 2.4 mA
FODM217
IF = 8 mA, IC = 2.4 mA
mA
%
60
mA
4.8
0.4
V
SWITCHING CHARACTERISTICS TA = 25°C unless otherwise specified
Symbol
Parameter
tON
Turn On Time
IC = 2 mA, VCE = 10 V, RL = 100 W
3
ms
tOFF
Turn Off Time
IC = 2 mA, VCE = 10 V, RL = 100 W
3
ms
tR
Output Rise Time (10%−90%)
IC = 2 mA, VCE = 10 V, RL = 100 W
3
ms
tF
Output Fall Time (90%−10%)
IC = 2 mA, VCE = 10 V, RL = 100 W
3
ms
Conditions
Min.
Typ.
Max.
Units
ISOLATION CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
3,750
VISO
Input−Output Isolation Voltage
Freq = 60 Hz, t = 1.0 min,
II−O v 10 mA (Note 3, 4)
RISO
Isolation Resistance
VI−O = 500 V (Note 3)
CISO
Isolation Capacitance
Frequency = 1 MHz
Typ.
3
Units
VACRMS
5 x 1010
W
0.6
3. Device is considered a two terminal device: Pin 1 and 2 are shorted together and Pins 3 and 4 are shorted together.
4. 3,750 VACRMS for 1 minute duration is equivalent to 4,500 VACRMS for 1 second duration.
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Max.
1.0
pF
FODM214, FODM217 Series
TYPICAL CHARACTERISTICS
PDLED, LED POWER DISSIPATION (mW)
160
PDC, COLLECTOR POWER
DISSIPATION (mW)
140
120
100
80
60
40
20
0
0
25
50
75
100
125
60
40
20
0
0
50
75
100
125
TA, AMBIENT TEMPERATURE (5C)
Figure 1. Collector Power Dissipation vs. Ambient
Temperature
Figure 2. LED Power Dissipation vs. Ambient
Temperature
DVF/DTA, FORWARD VOLTAGE
TEMPERATURE COEFFICIENT
(mV/5C)
−2.4
75°C
110°C
-55°C
10
25°C
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−2.0
−1.6
−1.2
−0.8
−0.4
1
2.0
VF, FORWARD VOLTAGE (V)
100
Figure 4. Forward Voltage Temperature Coefficient vs.
Forward Current
5
IC, COLLECTOR CURRENT (mA)
30
0.5 mA
4
1 mA
3 mA
3
5 mA
7 mA
10 mA
2
1
0
10
IF, FORWARD CURRENT (mA)
Figure 3. Forward Current vs. Forward Voltage
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
25
TA, AMBIENT TEMPERATURE (5C)
100
IF, FORWARD CURRENT (mA)
80
0
5
10
15
25
15
10
5
0
20
FODM217 IF = 5 mA
20
FODM214 IF = 1 mA
0
5
10
IF, FORWARD CURRENT (mA)
VCE, COLLECTOR−EMITTER CURRENT (V)
Figure 5. Collector Emitter Voltage vs. Forward Current
Figure 6. Collector Current vs. Collector−Emitter
Voltage
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4
FODM214, FODM217 Series
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR−CURRENT (mA)
30
25
20
FODM217 IF = 5 mA
15
10
5
FODM214 IF = 1 mA
0
0.0
0.5
CTR − CURRENT TRANSFER RATIO (%)
ICEO, COLLECTOR DARK
CURRENT (A)
0.01
0.1
Figure 8. Collector Current vs.
Forward Current
24 V
1E−8
5V
1E−9
10 V
1E−10
0
25
50
75
1000
10 V
5V
VCE= 0.4 V
100
10
0.0001
100
0.001
0.01
0.1
TA, AMBIENT TEMPERATURE (5C)
IF, FORWARD CURRENT (A)
Figure 9. Collector Dark Current vs.
Ambient Temperature
Figure 10. Current Transfer Ratio vs.
Forward Current
0.18
100
0.16
IC, COLLECTOR CURRENT (mA)
VCE(SAT), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.001
Figure 7. Collector Current vs.
Small Collector−Emitter Voltage
1E−7
0.14
IF = 8 mA
IC = 2.4 mA
0.08
IF = 1 mA
0.06
IC = 0.2 mA
0.04
IF = 20 mA
0.02
IC = 1 mA
0.00
−25
0.001
IF, FORWARD CURRENT (mA)
VCE= 48 V
0.10
VCE = 0.4 V
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1E−6
0.12
5V
0.01
0.0001
0.0001
1.0
1E−5
1E−11
−25
10 V
0
25
50
75
20 mA
10 mA
10
1
1 mA
IF = 0.5 mA
0.1
−25
100
5 mA
0
25
50
75
TA, AMBIENT TEMPERATURE (5C)
TA, AMBIENT TEMPERATURE (5C)
Figure 11. Collector−Emitter Saturation vs.
Ambient Temperature
Figure 12. Collector Current vs.
Ambient Temperature
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5
100
FODM214, FODM217 Series
1000
100
VCC = 10 V
TA = 25 °C
IF = 16 mA
100
IC = 2 mA
RL = 100 W
tOFF
t, SWITCHING TIME (ms)
t, SWITCHING TIME (ms)
VCC= 5 V
tF
10
tON
1
tON
tOFF
10
tR
tF
tR
0.1
1
10
1
−25
100
0
25
50
75
100
RL, LOAD RESISTANCE (kW)
TA, AMBIENT REMPERATURE (5C)
Figure 13. Switching Time vs. Load Resistance
Figure 14. Switching Time vs. Ambient
Temperature
TEST CIRCUIT
VCC
RL
1
VO
4
IF
tR
VO
IF Monitor
2
tF
90%
3
10%
RM
tON
Figure 15. Test Circuit for Switching Time
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6
tOFF
FODM214, FODM217 Series
REFLOW PROFILE
Figure 16. Reflow Profile
Profile Freature
Pb−Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60–120 seconds
Ramp−up Rate (tL to tP)
3°C/second max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60–150 seconds
Peak Body Package Temperature
260°C +0°C / –5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp−down Rate (TP to TL)
6°C/second max.
Time 25°C to Peak Temperature
8 minutes max.
ORDERING INFORMATION (Note 5)
Part Number
Package
Packing Method
FODM214A
SOP 4−Pin
Tube (100 units)
FODM214AR2
SOP 4−Pin
Tape and Reel (3000 units)
FODM214AV
SOP 4−Pin, DIN EN/IEC60747−5−5 Option
Tube (100 units)
FODM214AR2V
SOP 4−Pin, DIN EN/IEC60747−5−5 Option
Tape and Reel (3000 units)
5. The product orderable part number system listed in this table also applies to the FODM214, FODM217A, FODM217B, FODM217C, and
FODM217D products.
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7
FODM214, FODM217 Series
PACKAGE DIMENSIONS
MFP4 2.5x4.4, 1.27P
CASE TBD
ISSUE TBD
1.27±0.25
3
4
0.61
7.87 4.83
4.40±0.20
1.27
0.40±0.10
1
1.52
2
LAND PATTERN RECOMMENDATION
TOP VIEW
2.60±0.30
5.44±0.30
0.25±0.05
2.00±0.20
0.1±0.10
7±0.45
DETAIL A
SIDE VIEW
FRONT VIEW
GAGE
PLANE
4°
MIN 0.5
SEATING
PLANE
1.30±0.30
NOTES:
A. NO INDUSTRY STANDARD APPLIES TO
THIS PACKAGE
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS
D. DRAWING FILENAME: MKT−MFP04DrevA
0.127
DETAIL A
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8
FODM214, FODM217 Series
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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