FODM352

FODM352 Product Preview Photodarlington Optocoupler with a Base-Emitter Resistor in a 4-Pin Full Pitch Mini-Flat Package www.onsemi.com Description The FODM352 consists of one gallium arsenide (GaAs) infrared light emitting diode, optically coupled to a photodarlington output with a base−emitter resistor, in a compact, mini−flat, 4−pin package. The input−output isolation voltage, VISO, is rated at 3,750 VACRMS. MFP4 CASE 100AP Features • Current Transfer Ratio Min 1000% at IF = 1 mA, MARKING DIAGRAM VCE = 2 V, TA = 25°C • Safety and Regulatory Approvals: • Pin 1 − UL1577, 3750 VACRMS for 1 min − DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage Applicable to Infrared Reflow, 260°C ON 352 VXYYR Typical Applications • • • • Power Supply Regulators Digital Logic Inputs Microprocessor Inputs Programmable Controllers This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. 352 V X YY R = Specific Device Code = DIN EN/IEC60747−5−5 Option = One−Digit Year Code = Work Week = Assembly Package Code PIN CONNECTIONS ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2019 April, 2019 − Rev. P0 1 Publication Order Number: FODM352/D FODM352 Table 1. SAFETY AND INSULATIONS RATING As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–III Climatic Classification 55/110/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over−Voltage 6,000 Vpeak External Creepage w5 mm External Clearance w5 mm w 0.4 mm DTI Distance Through Insulation (Insulation Thickness) TS Case Temperature (Note 1) 150 °C IS,INPUT Input Current (Note 1) 200 mA PS,OUTPUT Output Power (Note 1) 300 mW > 109 W RIO Insulation Resistance at TS, VIO = 500 V (Note 1) 1. Safety limit values – maximum values allowed in the event of a failure. Table 2. ABSOLUTE MAXIMUM RATINGS (Note 2) TA = 25°C unless otherwise specified. Symbol Parameter Value Units TSTG Storage Temperature −55 to +150 °C TOPR Operating Temperature −55 to +110 °C Junction Temperature −55 to +125 °C 260 for 10 sec °C Continuous Forward Current 50 mA Reverse Input Voltage 6 V Power Dissipation (Note 3) 70 mW TJ TSOL Lead Solder Temperature (Refer to Reflow Temperature Profile) EMITTER IF(average) VR PDLED DETECTOR Continuous Collector Current 150 mA VCEO Collector−Emitter Voltage 300 V VECO Emitter−Collector Voltage 0.1 V PDC Collector Power Dissipation (Note 3) 150 mW IC(average) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. www.onsemi.com 2 FODM352 Table 3. ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified Parameter Symbol Conditions Min Typ Max Units 1.2 1.4 V 10 mA 250 pF EMITTER VF Forward Voltage IF IR Reverse Current VR = 4 V CT Terminal Capacitance V = 0 V, f = 1 kHz BVCEO Collector−Emitter Breakdown Voltage IC = 0.1 mA, IF = 0 mA 300 V BVECO Emitter−Collector Breakdown Voltage IE = 10 mA, IF = 0 mA 0.1 V Collector Dark Current VCE = 200 V, IF = 0 mA = 10 mA 30 DETECTOR ICEO 200 nA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Table 4. TRANSFER CHARACTERISTICS TA = 25°C unless otherwise specified Parameter Symbol IC CTR VCE(SAT) Conditions Min Collector Current IF = 1 mA, VCE = 2 V 10 Current Transfer Ratio IF = 1 mA, VCE = 2 V 1000 Collector−Emitter Saturation Voltage IF = 20 mA, IC = 100 mA Typ Max Units mA 5000 % 1.2 V Table 5. SWITCHING CHARACTERISTICS TA = 25°C unless otherwise specified Symbol Typ Max Units tR Output Rise Time (10% −90%) Parameter IF = 20 mA, VCC = 2 V, RL = 100 W Conditions Min 20 100 ms tF Output Fall Time (90% −10%) IF = 20 mA, VCC = 2 V, RL = 100 W 100 300 ms Typ Max Units Table 6. ISOLATION CHARACTERISTICS Symbol Parameter Conditions VISO Input−Output Isolation Voltage Freq = 60 Hz, t = 1.0 min, II−O v 10 mA (Notes 4, 5) RISO Isolation Resistance VI−O = 500 V (Note 4) CISO Isolation Capacitance Frequency = 1 MHz Min 3,750 VACRMS 5 x 1010 W 0.6 1.0 pF 4. Device is considered a two terminal device: Pin 1 and 2 are shorted together and Pins 3 and 4 are shorted together. 5. 3,750 VACRMS for 1 minute duration is equivalent to 4,500 VACRMS for 1 second duration. ORDERING INFORMATION Part Number Package Packing Method FODM352 SOP 4−Pin Tube (100 units) FODM352R2 SOP 4−Pin Tape and Reel (2500 units) FODM352V SOP 4−Pin, DIN EN/IEC60747−5−5 Option (pending approval) Tube (100 units) FODM352R2V SOP 4−Pin, DIN EN/IEC60747−5−5 Option (pending approval) Tape and Reel (2500 units) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 FODM352 TYPICAL CHARACTERISTICS Figure 1. LED Power Dissipation vs. Ambient Temperature Figure 2. Collector Power Dissipation vs. Ambient Temperature Figure 3. Collector Emitter Saturation Voltage vs. Forward Current Figure 4. Forward Current vs. Forward Voltage Figure 5. Current Transfer Ratio vs. Forward Current Figure 6. Collector Current vs. Collector Emitter Voltage www.onsemi.com 4 FODM352 TYPICAL CHARACTERISTICS Figure 7. Relative Current Transfer Ratio vs. Ambient Temperature Figure 8. Collector Emitter Saturation Voltage vs. Ambient Temperature Figure 9. Collector Dark Current vs. Ambient Temperature Figure 10. Response Time vs. Load Resistance Figure 11. Test Circuit for Switching Time www.onsemi.com 5 FODM352 REFLOW PROFILE Figure 12. Reflow Profile Profile Feature Pb−Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp−up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp−down Rate (TP to TL) 6°C/second max. Time 25°C to Peak Temperature 8 minutes max. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS MFP4 3.85X4.4, 2.54P CASE 100AP ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13488G MFP4 3.85X4.4, 2.54P DATE 31 AUG 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative