FODM352
Product Preview
Photodarlington
Optocoupler with a
Base-Emitter Resistor in a
4-Pin Full Pitch Mini-Flat
Package
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Description
The FODM352 consists of one gallium arsenide (GaAs) infrared
light emitting diode, optically coupled to a photodarlington output
with a base−emitter resistor, in a compact, mini−flat, 4−pin package.
The input−output isolation voltage, VISO, is rated at 3,750 VACRMS.
MFP4
CASE 100AP
Features
• Current Transfer Ratio Min 1000% at IF = 1 mA,
MARKING DIAGRAM
VCE = 2 V, TA = 25°C
• Safety and Regulatory Approvals:
•
Pin 1
− UL1577, 3750 VACRMS for 1 min
− DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
Applicable to Infrared Reflow, 260°C
ON
352
VXYYR
Typical Applications
•
•
•
•
Power Supply Regulators
Digital Logic Inputs
Microprocessor Inputs
Programmable Controllers
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
352
V
X
YY
R
= Specific Device Code
= DIN EN/IEC60747−5−5 Option
= One−Digit Year Code
= Work Week
= Assembly Package Code
PIN CONNECTIONS
ORDERING INFORMATION
See detailed ordering and shipping information on page 3
of this data sheet.
© Semiconductor Components Industries, LLC, 2019
April, 2019 − Rev. P0
1
Publication Order Number:
FODM352/D
FODM352
Table 1. SAFETY AND INSULATIONS RATING As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical
insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated
Mains Voltage
< 150 VRMS
I–IV
< 300 VRMS
I–III
Climatic Classification
55/110/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
VPR
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample
Test with tm = 10 s, Partial Discharge < 5 pC
904
Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1060
Vpeak
VIORM
Maximum Working Insulation Voltage
565
Vpeak
VIOTM
Highest Allowable Over−Voltage
6,000
Vpeak
External Creepage
w5
mm
External Clearance
w5
mm
w 0.4
mm
DTI
Distance Through Insulation (Insulation Thickness)
TS
Case Temperature (Note 1)
150
°C
IS,INPUT
Input Current (Note 1)
200
mA
PS,OUTPUT
Output Power (Note 1)
300
mW
> 109
W
RIO
Insulation Resistance at TS, VIO = 500 V (Note 1)
1. Safety limit values – maximum values allowed in the event of a failure.
Table 2. ABSOLUTE MAXIMUM RATINGS (Note 2) TA = 25°C unless otherwise specified.
Symbol
Parameter
Value
Units
TSTG
Storage Temperature
−55 to +150
°C
TOPR
Operating Temperature
−55 to +110
°C
Junction Temperature
−55 to +125
°C
260 for 10 sec
°C
Continuous Forward Current
50
mA
Reverse Input Voltage
6
V
Power Dissipation (Note 3)
70
mW
TJ
TSOL
Lead Solder Temperature (Refer to Reflow Temperature Profile)
EMITTER
IF(average)
VR
PDLED
DETECTOR
Continuous Collector Current
150
mA
VCEO
Collector−Emitter Voltage
300
V
VECO
Emitter−Collector Voltage
0.1
V
PDC
Collector Power Dissipation (Note 3)
150
mW
IC(average)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
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2
FODM352
Table 3. ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified
Parameter
Symbol
Conditions
Min
Typ
Max
Units
1.2
1.4
V
10
mA
250
pF
EMITTER
VF
Forward Voltage
IF
IR
Reverse Current
VR = 4 V
CT
Terminal Capacitance
V = 0 V, f = 1 kHz
BVCEO
Collector−Emitter Breakdown Voltage
IC = 0.1 mA, IF = 0 mA
300
V
BVECO
Emitter−Collector Breakdown Voltage
IE = 10 mA, IF = 0 mA
0.1
V
Collector Dark Current
VCE = 200 V, IF = 0 mA
= 10 mA
30
DETECTOR
ICEO
200
nA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 4. TRANSFER CHARACTERISTICS TA = 25°C unless otherwise specified
Parameter
Symbol
IC
CTR
VCE(SAT)
Conditions
Min
Collector Current
IF = 1 mA, VCE = 2 V
10
Current Transfer Ratio
IF = 1 mA, VCE = 2 V
1000
Collector−Emitter Saturation Voltage
IF = 20 mA, IC = 100 mA
Typ
Max
Units
mA
5000
%
1.2
V
Table 5. SWITCHING CHARACTERISTICS TA = 25°C unless otherwise specified
Symbol
Typ
Max
Units
tR
Output Rise Time (10% −90%)
Parameter
IF = 20 mA, VCC = 2 V,
RL = 100 W
Conditions
Min
20
100
ms
tF
Output Fall Time (90% −10%)
IF = 20 mA, VCC = 2 V,
RL = 100 W
100
300
ms
Typ
Max
Units
Table 6. ISOLATION CHARACTERISTICS
Symbol
Parameter
Conditions
VISO
Input−Output Isolation Voltage
Freq = 60 Hz, t = 1.0 min,
II−O v 10 mA (Notes 4, 5)
RISO
Isolation Resistance
VI−O = 500 V (Note 4)
CISO
Isolation Capacitance
Frequency = 1 MHz
Min
3,750
VACRMS
5 x 1010
W
0.6
1.0
pF
4. Device is considered a two terminal device: Pin 1 and 2 are shorted together and Pins 3 and 4 are shorted together.
5. 3,750 VACRMS for 1 minute duration is equivalent to 4,500 VACRMS for 1 second duration.
ORDERING INFORMATION
Part Number
Package
Packing Method
FODM352
SOP 4−Pin
Tube (100 units)
FODM352R2
SOP 4−Pin
Tape and Reel (2500 units)
FODM352V
SOP 4−Pin, DIN EN/IEC60747−5−5 Option (pending approval)
Tube (100 units)
FODM352R2V
SOP 4−Pin, DIN EN/IEC60747−5−5 Option (pending approval)
Tape and Reel (2500 units)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
FODM352
TYPICAL CHARACTERISTICS
Figure 1. LED Power Dissipation vs. Ambient
Temperature
Figure 2. Collector Power Dissipation vs.
Ambient Temperature
Figure 3. Collector Emitter Saturation Voltage
vs. Forward Current
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Current Transfer Ratio vs. Forward
Current
Figure 6. Collector Current vs. Collector
Emitter Voltage
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4
FODM352
TYPICAL CHARACTERISTICS
Figure 7. Relative Current Transfer Ratio vs.
Ambient Temperature
Figure 8. Collector Emitter Saturation Voltage
vs. Ambient Temperature
Figure 9. Collector Dark Current vs. Ambient
Temperature
Figure 10. Response Time vs. Load
Resistance
Figure 11. Test Circuit for Switching Time
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5
FODM352
REFLOW PROFILE
Figure 12. Reflow Profile
Profile Feature
Pb−Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60–120 seconds
Ramp−up Rate (tL to tP)
3°C/second max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60–150 seconds
Peak Body Package Temperature
260°C +0°C / –5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp−down Rate (TP to TL)
6°C/second max.
Time 25°C to Peak Temperature
8 minutes max.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MFP4 3.85X4.4, 2.54P
CASE 100AP
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13488G
MFP4 3.85X4.4, 2.54P
DATE 31 AUG 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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