FODM8801B

Features Description • Utilizing Proprietary Process Technology to Achieve High Operating Temperature: up to 125°C • Guaranteed Current Transfer Ratio (CTR) Specifications Across Full Temperature Range – Excellent CTR Linearity at High-Temperature – CTR at Very Low Input Current, IF • High Isolation Voltage Regulated by Safety Agency: C-UL / UL1577, 3750 VACRMS for 1 minute and DIN EN/IEC60747-5-5 • Compact Half-Pitch, Mini-Flat, 4-Pin Package (1.27 mm Lead Pitch, 2.4 mm Maximum Standoff Height) • > 5 mm Creepage and Clearance Distance • Applicable to Infrared Ray Reflow, 245°C In the OptoHiT™ series, the FODM8801 is a first-of-kind phototransistor, utilizing ON Semiconductor’s leading-edge proprietary process technology to achieve high operating temperature characteristics, up to 125°C. The opto-coupler consists of an aluminum gallium arsenide (AlGaAs) infrared lightemitting diode (LED) optically coupled to a phototransistor, available in a compact half-pitch, miniflat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, VISO, is rated at 3750 VACRMS. Applications • • • • • Primarily Suited for DC-DC Converters Ground-Loop Isolation, Signal-Noise Isolation Communications – Adapters, Chargers Consumer – Appliances, Set-Top Boxes Industrial – Power Supplies, Motor Control, Programmable Logic Control Schematic Package ANODE 1 CATHODE 2 4 COLLECTOR 3 EMITTER Figure 2. Half-Pitch Mini-Flat Figure 1. Schematic ©2010 Semiconductor Components Industries, LLC. June-2018, Rev. 3 Publication Order Number: FODM8801A/D FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package FODM8801A, FODM8801B, FODM8801C OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics < 150 VRMS Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage I–IV I–III < 300 VRMS 40/125/21 Climatic Classification Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 848 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over-Voltage VPR DTI TS IS,INPUT Parameter 6000 Vpeak External Creepage 5 mm External Clearance 5 mm  0.5 mm Distance Through Insulation (Insulation Thickness) Case Temperature(1) Input Current(1) PS,OUTPUT Output Power(1) RIO Insulation Resistance at TS, VIO = 500 V(1) Note: 1. Safety limit values – maximum values allowed in the event of a failure. www.onsemi.com 2 150 °C 200 mA 300 mW > 109  FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified. Symbol Parameter Value Unit Total Package TSTG Storage Temperature -40 to +150 °C TOPR Operating Temperature -40 to +125 °C Junction Temperature -40 to +140 °C Lead Solder Temperature 245 for 10 s °C Continuous Forward Current 20 mA Reverse Input Voltage 6 V Dissipation(2)(4) 40 mW Continuous Collector Current 30 mA VCEO Collector-Emitter Voltage 75 V VECO Emitter-Collector Voltage 7 V 150 mW TJ TSOL Emitter IF(average) VR PDLED Power Detector IC(average) PDC Collector Power Dissipation(3)(4) Notes: 2.Derate linearly from 73°C at a rate of 0.24 mW/°C 3.Derate linearly from 73°C at a rate of 2.23 mW/°C. 4.Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. ON Semiconductor does not recommend exceeding them or designing to absolute maximum ratings. Symbol TA VFL(OFF) IFH Parameter Value Unit Operating Temperature -40 to +125 °C Input Low Voltage -5.0 to +0.8 V 1 to 10 mA Input High Forward Current Isolation Characteristics Symbol VISO Parameter Conditions Input-Output Isolation Voltage f = 60 Hz, t = 1 min., II-O  10 µA(5)(6) RISO Isolation Resistance VI-O = 500 CISO Isolation Capacitance f = 1 MHz V(5) Min. Typ. Max. Unit 3,750 VACRMS 1012  0.3 0.5 pF Notes: 5.Device is considered a two-terminal device: pins 1 and 2 are shorted together and pins 3 and 4 are shorted together. 6.3,750 VACRMS for 1 minute is equivalent to 4,500 VACRMS for 1 second. www.onsemi.com 3 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Absolute Maximum Ratings Symbol Parameter Conditions Min. Typ. Max. Unit 1.00 1.35 1.80 V Emitter VF Forward Voltage IF = 1 mA Forward-Voltage Coefficient IF = 1 mA IR Reverse Current VR = 6 V CT Terminal Capacitance V = 0 V, f = 1 MHz BVCEO Collector-Emitter Breakdown Voltage IC = 0.5 mA, IF = 0 mA BVECO Emitter-Collector Breakdown Voltage IE = 100 µA, IF = 0 mA VF / TA -1.6 mV / °C 10 µA 30 pF 75 130 V 7 12 V Detector ICEO CCE Collector Dark Current Capacitance VCE = 75 V, IF = 0 mA, TA = 25°C 100 nA VCE = 50 V, IF = 0 mA 50 µA VCE = 5 V, IF = 0 mA 30 µA VCE = 0 V, f = 1 MHz www.onsemi.com 4 8 pF FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Electrical Characteristics Apply over all recommended conditions (TA = -40°C to +125°C unless otherwise specified). All typical values are measured at TA = 25°C. Apply over all recommended conditions (TA = -40°C to +125°C unless otherwise specified). All typical values are measured at TA = 25°C. Symbol Parameter Device FODM8801A CTRCE Current Transfer Ratio FODM8801B (Collector-Emitter) FODM8801C FODM8801A Saturated Current CTRCE(SAT) Transfer Ratio FODM8801B (Collector-Emitter) FODM8801C FODM8801A VCE(SAT) Saturation Voltage FODM8801B FODM8801C Conditions Min. Typ. Max. IF = 1.0 mA, VCE = 5 V @ TA = 25°C 80 120 160 IF = 1.0 mA, VCE = 5 V 35 120 230 IF = 1.6 mA, VCE = 5 V 40 125 IF = 3.0 mA, VCE = 5 V 45 138 IF = 1.0 mA, VCE = 5 V @ TA = 25°C 130 195 260 IF = 1.0 mA, VCE = 5 V 65 195 360 IF = 1.6 mA, VCE = 5 V 70 202 IF = 3.0 mA, VCE = 5 V 75 215 IF = 1.0 mA, VCE = 5 V @ TA = 25°C 200 300 400 IF = 1.0 mA, VCE = 5 V 100 300 560 IF = 1.6 mA, VCE = 5 V 110 312 IF = 3.0 mA, VCE = 5 V 115 330 IF = 1.0 mA, VCE = 0.4 V @ TA = 25°C 65 108 IF = 1.0 mA, VCE = 0.4 V 30 108 IF = 1.6 mA, VCE = 0.4 V 25 104 IF = 3.0 mA, VCE = 0.4 V 20 92 IF = 1.0 mA, VCE = 0.4 V @ TA = 25°C 90 168 IF = 1.0 mA, VCE = 0.4 V 45 168 IF = 1.6 mA, VCE = 0.4 V 40 155 IF = 3.0 mA, VCE = 0.4 V 35 132 IF = 1.0 mA, VCE = 0.4 V @ TA = 25°C 140 238 IF = 1.0 mA, VCE = 0.4 V 75 238 IF = 1.6 mA, VCE = 0.4 V 65 215 IF = 3.0 mA, VCE = 0.4 V 55 177 % 150 245 % 380 IF = 1.0 mA, IC = 0.3 mA 0.17 0.40 IF = 1.6 mA, IC = 0.4 mA 0.16 0.40 IF = 3.0 mA, IC = 0.6 mA 0.15 0.40 IF = 1.0 mA, IC = 0.45 mA 0.17 0.40 IF = 1.6 mA, IC = 0.6 mA 0.16 0.40 IF = 3.0 mA, IC = 1.0 mA 0.16 0.40 IF = 1.0 mA, IC = 0.75 mA 0.18 0.40 IF = 1.6 mA, IC = 1.0 mA 0.17 0.40 IF = 3.0 mA, IC = 1.6 mA 0.17 0.40 www.onsemi.com 5 Unit V FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Transfer Characteristics Apply over all recommended conditions (TA = -40°C to +125°C unless otherwise specified). All typical values are measured at TA = 25°C. Symbol tON tOFF tR tF Parameter Turn-On Time Turn-Off Time Output Rise Time (10% to 90%) Output Fall Time (90% to 10%) CMH Common-Mode Rejection Voltage (Transient Immunity) – Output High CML Common-Mode Rejection Voltage (Transient Immunity) – Output Low Device All Devices All Devices Conditions Min. Typ. Max. IF = 1.6 mA, VCC = 5 V, RL = 0.75 k 1 6 20 µs IF = 1.6 mA, VCC = 5 V, RL = 4.7 k IF = 1.6 mA, VCC = 5 V, RL = 0.75 k Unit 6 1 6 20 µs IF = 1.6 mA, VCC = 5 V, RL = 4.7 k 40 All Devices IF = 1.6 mA, VCC = 5 V, RL = 0.75 k 5 µs All Devices IF = 1.6 mA, VCC = 5 V, RL = 0.75 k 5.5 µs All Devices TA = 25°C, IF = 0 mA, VO > 2.0 V, RL = 4.7 k, VCM = 1000 V(7), Figure 16 20 kV / µs All Devices TA = 25°C, IF = 1.6 mA, VO < 0.8 V, RL = 4.7 k, VCM = 1000 V(7), Figure 16 20 kV / µs Note: 7.Common-mode transient immunity at output high is the maximum tolerable positive dVcm/dt on the leading edge of the common-mode impulse signal, VCM, to assure that the output remains high. www.onsemi.com 6 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Switching Characteristics 100 100 IC – COLLECTOR CURRENT (mA) IF – FORWARD CURRENT (mA) TA = 25°C 10 TA = 125°C = 25°C TA = -40°C 1.0 0.1 1.0 1.2 1.1 1.3 1.4 1.5 1.6 1.7 VCE = 5.0 V 10 VCE = 0.4 V 1.0 0.1 0.1 1.8 1 VF – FORWARD VOLTAGE (V) Figure 3. Forward Current vs. Forward Voltage VCE = 5 V TA = 25°C 100 1 10 10 VCE = 5 V TA = 25°C NORMALIZED TO IF = 1 mA 1.0 0.1 0.1 100 1 IF – FORWARD CURRENT (mA) 100 Figure 6. Normalized CTR vs. Forward Current 1.2 1.2 VCE = 2 V VCE = 5 V 1.0 0.8 IF = 0.5 mA IF = 1 mA 0.6 IF = 2 mA 1.0 IF = 2 mA NORMALIZED CTR @ 25°C NORMALIZED CTR @ 25°C 10 IF – FORWARD CURRENT (mA) Figure 5. Current Transfer Ratio vs. Forward Current 0.4 0.2 0 -40 100 Figure 4. Collector Current vs. Forward Current CTR (NORMALIZED) = CTR(IF) / CTR(IF = 1 mA) CTR – CURRENT TRANSFER RATIO (%) 1000 10 0.1 10 IF – FORWARD CURRENT (mA) 0.8 IF = 0.5 mA IF = 1 mA 0.6 0.4 0.2 -20 0 20 40 60 80 100 120 0 -40 140 TA – AMBIENT TEMPERATURE (°C) -20 0 20 40 60 80 100 120 140 TA – AMBIENT TEMPERATURE (°C) Figure 7. Normalized CTR vs. Ambient Temperature Figure 8. Normalized CTR vs. Ambient Temperature www.onsemi.com 7 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Typical Performance Curves 100 40 TA = 25°C 35 IC – COLLECTOR CURRENT (mA) IC – COLLECTOR CURRENT (mA) VCE = 5 V IF = 20 mA IF = 10 mA IF = 5.0 mA 10 IF = 3.0 mA IF = 1.6 mA IF = 1.0 mA 1.0 IF = 0.5 mA 30 IF = 15 mA 25 IF = 20 mA 20 IF = 10 mA 15 IF = 5 mA 10 5 0.1 -40 -20 0 20 40 60 80 100 0 120 IF = 1 mA 0 1 Figure 9. Collector Current vs. Ambient Temperature 4 5 1000 VCE = 5 V TA = 25°C IF = 1.6 mA 10000 VCE = 75 V SWITCHING TIME (μs) ICEO – COLLECTOR DARK CURRENT (nA) 3 Figure 10 Collector Current vs. Collector-Emitter Voltage 100000 1000 VCE = 48 V 100 VCE = 24 V VCE = 10 V 10 1 100 tOFF tF 10 tON tR 1 VCE = 5 V 0.1 0.01 -40 -20 0 20 40 60 80 100 0.1 100 120 10 TA – AMBIENT TEMPERATURE (°C) Figure 12. Switching Time vs. Load Resistance 300 CTR – CURRENT TRANSFER RATIO (%) 0.35 0.30 0.25 IF = 1.6 mA, IC = 1.6 mA 0.20 IF = 3.0 mA, IC = 1.8 mA 0.15 0.10 0.05 0.00 -40 100 RL – LOAD RESISTANCE (kΩ) Figure 11. Collector Dark Current vs. Ambient Temperature VCE(SAT) – COLLECTOR-EMITTER SATURATION VOLTAGE (V) 2 VCE – COLLECTOR-EMITTER VOLTAGE (V) TA – AMBIENT TEMPERATURE (°C) -20 0 20 40 60 80 100 VCE = 5 V, IF = 3 mA 250 VCE = 5 V, IF = 1 mA VCE = 5 V, IF = 1.6 mA 200 VCE = 0.4 V, IF = 1 mA VCE = 0.4 V, IF = 1.6 mA 150 VCE = 0.4 V, IF = 3 mA 100 50 -40 120 TA – AMBIENT TEMPERATURE (°C) -20 0 20 40 60 80 100 120 TA – AMBIENT TEMPERATURE (°C) Figure 13. Collector-Emitter Saturation Voltage vs. Ambient Temperature www.onsemi.com 8 Figure 14. Current Transfer Ration vs. Ambient Temperature FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Typical Performance Curves (Continued) +5 V IF Pulse Generator: tr = 5 ns ZO = 50 Ω PW = 50 μs DC = 1% RL = 4.7 kΩ + IF Monitor 1 4 2 3 VO VO Monitoring Node GND RM (IF = 1.6 mA) Input Pulse tR tF 5V 90% Output Pulse 10% VOL tON tOFF Figure 15. Test Circuit for Propagation Delay, Rise Time, and Fall Time +5 V IF RL = 4.7 kΩ + 1 4 2 3 SW VO Monitoring Node GND RM VCM Pulse Gen 1 kV VCM 90% 10% 0V VOH VO (IF = 0 mA) 2V 0.8 V VO (IF = 1.6 mA) VOL Figure 16. Test Circuit for Instantaneous Common-Mode Rejection Voltage www.onsemi.com 9 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Test Circuits 260 T P 245 240 220 TL Temperature (°C) 200 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S tP Tsmax tL 180 160 Tsmin 140 ts 120 100 80 60 40 20 0 120 240 360 Time 25°C to Peak Figure 13. Reflow Profile Profile Freature Pb-Free Assembly Profile Temperature Minimum (Tsmin) 150°C Temperature Maximum (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second maximum Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 245°C +0°C / –5°C Time (tP) within 5°C of 245°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second maximum Time 25°C to Peak Temperature 8 minutes maximum Figure 17. Reflow Profile www.onsemi.com 10 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Reflow Profile Part Number Package Packing Method FODM8801A Half Pitch Mini-Flat 4-Pin Tube (100 units) FODM8801AR2 Half Pitch Mini-Flat 4-Pin Tape and Reel (2500 Units) FODM8801AV Half Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option Tube (100 Units) FODM8801AR2V Half Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option Tape and Reel (2500 Units) Note: 8. The product orderable part number system listed in this table also applies to the FODM8801B, FODM8801C products. Marking Information 1 8801x V X YY M 3 4 2 6 5 Figure 18. Top Mark Table 1. Top Mark Definitions 1 ON Semiconductor Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., “6” 5 Digit Work Week, Ranging from “01” to “53” 6 Assembly Package Code www.onsemi.com 11 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Ordering Information K0 P2 P0 t D0 E A0 W1 W B0 d F D1 P 1.27 Pitch Symbol Dimensions (mm) Tape Width W 12.00 +0.30 / -0.10 Tape Thickness t Sprocket Hole Pitch P0 4.00 ±0.10 Sprocket Hole Diameter D0 1.50 +0.10 / -0.0 Sprocket Hole Location E 1.75 ±0.10 Pocket Location F 5.50 ±0.10 P2 2.00 ±0.10 Pocket Pitch P 8.00 ±0.10 Pocket Dimension A0 2.80 ±0.10 B0 7.30 ±0.10 Description 0.30 ±0.05 K0 2.30 ±0.10 Pocket Hole Diameter D1 1.50 Min. Cover Tape Width W1 9.20 Cover Tape Thickness d Max. Component Rotation or Tilt 0.065 ±0.010 10° Max. Devices Per Reel 2500 Reel Diameter 330 mm (13") www.onsemi.com 12 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Tape and Reel Dimensions ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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