FP210
Ordering number : EN4537A
FP210
PNP Epitaxial Planar Silicon Transistor
Driver Applications
Features
•
•
Composite type with 2 transistors (PNP) contained in one package, facilitating high-density mounting.
The FP210 is formed with 2 chips being equivalent to the 2SB1123, placed in one package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--60
V
Collector-to-Emitter Voltage
VCEO
--50
V
Emitter-to-Base Voltage
VEBO
--6
V
IC
--2
A
Collector Current
Collector Current (Pulse)
Base Current
ICP
IB
Collector Dissipation
PC
Mounted on a ceramic board (250mm2✕0.8mm) 1unit
0.8
W
Total Dissipation
PT
Mounted on a ceramic board (250mm2✕0.8mm)
1.1
W
Junction Temperature
Tj
Storage Temperature
Tstg
--4
--400
A
mA
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
hFE
fT
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
Conditions
VCB=--50V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--100mA
Ratings
min
typ
max
140
Unit
--100
nA
--100
nA
400
VCE=--10V, IC=--50mA
VCB=--10V, f=1MHz
150
MHz
IC=--1A, IB=--50mA
IC=--1A, IB=--50mA
--0.3
--0.7
V
--0.9
--1.2
V
22
pF
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=--10µA, IE=0A
IC=--1mA, RBE=∞
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V(BR)EBO
ton
IE=--10µA, IC=0A
See specified Test Circuit.
60
ns
Storage Time
tstg
See specified Test Circuit.
450
ns
tf
See specified Test Circuit.
30
ns
Fall Time
--60
V
--50
V
--6
V
Marking : 210
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2805EA MS IM TB-0000201 / 52098HA (KT) / 53094TH (KOTO) BX-0215 No.4537-1/4
FP210
Package Dimensions
unit : mm
7010-006
Bottom View
4.5
3.4
1.5
2.8
0.5
1.0
0.4
7
4
3
1.75
5
0.3
2
1
0.5
2.5
1.57
6
1.0
4.0
(0.5)
1.8
0.2 MIN(Flat block)
(0.5)
0 to 0.1
1.75
1 : Base 1
2 : Collector 1
3 : Emitter Common
4 : Collector 2
5 : Base 2
6 : Collector 2
7 : Collector 1
0.2
0.7
3.5
1.2 D0.15
Top View
SANYO : PCP5
Electrical Connection
7
1
1 : Base 1
2 : Collector 1
3 : Emitter Common
4 : Collector 2
5 : Base 2
6 : Collector 2
7 : Collector 1
6
2
4
3
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
INPUT
OUTPUT
IB2
RB
VR
RL
50Ω
+
5
+
100µF
Top view
470µF
VBE=5V
VCC= --25V
IC=10IB1= --10IB2= --500mA
IC -- VCE
--1.6
--1.2
A
--10m
--5mA
--0.8
--2mA
--0.4
0
--0.4
--0.8
--1.2
A
--2.0m
--1.8mA
--1.6mA
--1.4mA
--1.2mA
--1.0mA
--400
--300
--0.8mA
--200
--0.6mA
--0.4mA
--100
IB=0mA
0
IC -- VCE
--500
From a top
--50mA --25mA
--45mA --20mA
--40mA --15mA
--35mA
--30mA
Collector Current, IC -- A
Collector Current, IC -- A
--2.0
--1.6
Collector-to-Emitter Voltage, VCE -- V
--0.2mA
IB=0mA
0
--2.0
ITR10979
0
--2
--4
--6
--8
--10
Collector-to-Emitter Voltage, VCE -- V
ITR10980
No.4537-2/4
FP210
IC -- VBE
--2.4
VCE= --2V
7
--2.0
5
DC Current Gain, hFE
Collector Current, IC -- A
hFE -- IC
1000
VCE= --2V
--1.6
--1.2
Ta=
7
5°C
25°C
--25°
C
--0.8
--0.4
Ta=75°C
25°C
--25°C
3
2
100
7
5
3
2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
5 7 --0.01
3
2
100
7
5
3
5 7 --0.1
2
3
5 7 --1.0
2
3
ITR10982
Cob -- VCB
2
f=1MHz
Output Capacitance, Cob -- pF
5
100
7
5
3
2
10
2
7
10
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Collector Current, IC -- A
3
5
7
2
--10
3
5
Collector-to-Base Voltage, VCB -- V
7 --100
ITR10984
VBE(sat) -- IC
--10
IC / IB=20
7
IC / IB=20
7
5
3
2
--100
7
5
C
75°
Ta=
°C
--25
25°C
3
2
--10
5
3
2
--1.0
25°C
Ta= --25°C
7
75°C
5
3
5
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
5
3
DC
tio
n
--0.1
7
5
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board (250mm2✕0.8mm)
--0.01
7
5
2
3
5
7 --1.0
2
3
5
7 --10
2
5
7 --0.1
2
3
5
7 --1.0
2
3
ITR10986
PC(TR2) -- PC(TR1)
Mounted on a ceramic board (250mm2✕0.8mm)
op
era
3
2
3
Collector Current, IC -- A
Collector Dissipation, PC(TR2) -- W
IC= --2A
2
1.0
30
1m 0µs
s
10
ms
ICP= --4A
3
2
7 --0.01
ITR10985
ASO
5
--1.0
7
5
2
ITR10983
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
--1.0
3
VCE(sat) -- IC
--1000
Collector Current, IC -- A
3
Collector Current, IC -- A
VCB= --10V
7
2
ITR10981
f T -- IC
1000
Gain-Bandwidth Product, f T -- MHz
--1.2
3
Collector-to-Emitter Voltage, VCE -- V
0.8
0.6
0.4
0.2
0
5
7
ITR10987
0
0.2
0.4
0.6
0.8
Collector Dissipation, PC(TR1) -- W
1.0
ITR10988
No.4537-3/4
FP210
PC -- Ta
1.2
Mounted on a ceramic board (250mm2✕0.8mm)
Collector Dissipation, PC -- W
1.1
1.0
To
t
0.8
al
0.6
Di
ss
1u
nit
ip
ati
on
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR10989
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2005. Specifications and information herein are subject
to change without notice.
PS No.4537-4/4
