Is Now Part of
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FPDB40PH60B
用于两相无桥功率因数校正的 PFC SPM® 3 系列
特性
概述
The FPDB40PH60B 是一种先进的 PFC SPM® 3 模块,
为消费、医药和工业应用提供非常全面的高性能无桥功率
因数校正输入功率平台。这些模块综合优化了内置 IGBT
的栅极驱动以最小化电磁干扰和能量损耗。同时也提供多
重模组保护特性,集成欠压闭锁,过流保护,热量监测和
故障报告。这些模块内的高性能输出二极管和分流电阻,
为额外节省空间和方便安装起到了重要作用。
• 通过 UL 第 E209204 号认证 (UL1557)
• 600 V - 40 A 两相无桥功率因数校正,包含栅极驱动和
保护的控制 IC
• 采用 Al2O3 DBC 基板,实现非常低的热阻
• 内置负温度系数热敏电阻可实现温度监测
• 内置分流电阻可实现电流感应
• 针对 20 kHz 开关频率进行优化
• 绝缘等级:2500 Vrms / 分钟
应用
• 两相无桥功率因数校正转换器
相关资料
• AN-9041 - Bridgeless PFC SPM 3 Series Design
Guide
图 1. 封装概览
封装标识与定购信息
器件
器件标识
封装
包装类型
数量
FPDB40PH60B
FPDB40PH60B
SPMGC-027
Rail
10
©2011 飞兆半导体公司
FPDB40PH60B Rev. C3
1
www.fairchildsemi.com
FPDB40PH60B 用于两相无桥功率因数校正的 PFC SPM® 3 系列
2014 年 9 月
• 对于 IGBT:栅极驱动电路、过流保护 (OCP)、控制电源欠压锁定 (UVLO) 保护
• 故障信号:对应 OC 和 UV 故障
• 内置热敏电阻:温度监控
• 输入接口:高电平有效接口,可用于 3.3 / 5 V 逻辑电平,施密特触发脉冲输入
引脚布局
(1) VCC(L)
(2) COM
(3) NC
(4) IN(R)
(5) IN(S)
(6) VFO
(7) CFOD
(8) CSC
(21) VAC(22) NSENSE
(23) NC
N
(9) NC
(10) NC
(11) NC
(12) NC
(13) NC
(14) NC
(15) NC
(24) N
Case Temperature (T C)
Detecting Point
(25) R
(16) NC
(17) NC
(18) NC
(26) S
DBC Substrate
(19) RTH
(27) PR
(20) VTH
图 2. 俯视图
©2011 飞兆半导体公司
FPDB40PH60B Rev. C3
2
www.fairchildsemi.com
FPDB40PH60B 用于两相无桥功率因数校正的 PFC SPM® 3 系列
集成的驱动、保护和系统控制功能
FPDB40PH60B 用于两相无桥功率因数校正的 PFC SPM® 3 系列
引脚描述
引脚号
引脚名
引脚描述
1
VCC
IC 和 IGBT 驱动的公共偏压
2
COM
公共电源接地
4
IN(R)
低端 R 相 IGBT 的信号输入
5
IN(S)
低端 S 相 IGBT 的信号输入
6
VFO
故障输出
7
CFOD
设置故障输出持续时间的电容
8
CSC
过电流感测电容 (低通滤波器)
19
R(TH)
供热敏电阻使用的串联电阻器
20
V(TH)
热敏电阻偏压
21
VAC-
电流感测端
22
NSENSE
24
N
直流负端
25
R
R 相输出
26
S
S 相输出
27
PR
直流正端
3, 9~18, 23
NC
无连接
电流感测参考端
内部等效电路
(20) V TH
(19) R TH
NTC
Thermistor
(27) P R
D1
D2
(8) C SC
CSC
(26) S
(7) C FOD
CFOD
(25) R
(6) V FO
VFO
(5) IN (S)
IN(S)
(4) IN (R)
IN(R)
(2) COM
COM
(1) VCC
VCC
OUT(S)
Q1
D3
Q2
D4
(24) N
(23) NC
OUT(R)
Shunt
Resistor
(22) N SENSE
(21) V AC-
图 3. 内部框图
注:
1. 转换器由两个 IGBT 组成,内置有四个二极管,以及一个具有栅极驱动和保护功能的 IC。
©2011 飞兆半导体公司
FPDB40PH60B Rev. C3
3
www.fairchildsemi.com
(TJ = 25°C, 除非另有说明。)
转换器部分
符号
Vi
Vi (浪涌)
VPN
VPN (浪涌)
项目
条件
额定值
单位
电源电压
施加在 R - S 之间
264
Vrms
电源电压 (浪涌)
施加在 R - S 之间
500
V
输出电压
施加在 P - N 之间
450
V
输出电压 (浪涌)
施加在 P - N 之间
500
V
600
V
VCES
集电极 - 发射极之间电压
±IC
单个 IGBT 的集电极电流
TC = 25°C
40
A
±ICP
单个 IGBT 的集电极电流 (峰值)
TC = 25°C,脉冲宽度小于 1 ms
70
A
集电极功耗
TC = 25°C 单个 IGBT
113
W
600
V
350
A
2
W
-40 ~ 150
°C
PC
VRRM
重复峰值反向电压
IFSM
正向浪涌峰值电流
单一正弦半波
PRSH
分流电阻的额定功率
TC < 125°C
工作结温
(注 2)
TJ
注:
2. PFC SPM® 产品中集成的功率芯片的最大结温额定值为 150 °C(@TC ≤ 100°C).
控制部分
符号
项目
条件
VCC
控制电源电压
施加在 VCC - COM 之间
VIN
输入信号电压
施加在 IN - COM 之间
VFO
故障输出电源电压
施加在 VFO - COM 之间
IFO
故障输出电流
VFO 引脚处的灌电流
VSC
电流感测输入电压
施加在 CSC - COM 之间
额定值
单位
20
V
-0.3 ~ 17.0
V
-0.3 ~ VCC+0.3
V
5
mA
-0.3~VCC+0.3
V
整个系统
符号
额定值
单位
模块壳体工作温度
-20 ~ 100
°C
TSTG
存储温度
-40 ~ 150
°C
VISO
绝缘电压
2500
Vrms
TC
项目
条件
60 Hz,正弦波形,交流 1 分钟,连接陶
瓷基板到引脚
热阻
符号
Rθ(j-c)Q
项目
条件
最小值 典型值 最大值
单位
IGBT
-
-
1.1
°C/W
Rθ(j-c)HD
高端二极管
-
-
1.9
°C/W
Rθ(j-c)LD
低端二极管
-
-
1.4
°C/W
结点 - 壳体的热阻 (参考 PKG 中心)
注:
3. 关于壳体温度 (TC) 的测量点,请参见图 2。
©2011 飞兆半导体公司
FPDB40PH60B Rev. C3
4
www.fairchildsemi.com
FPDB40PH60B 用于两相无桥功率因数校正的 PFC SPM® 3 系列
绝对最大额定值
(TJ = 25°C, 除非另有说明。)
转换器部分
符号
项目
条件
最小值 典型值 最大值 单位
VCE(SAT)
IGBT 饱和电压
VCC = 15 V, VIN = 5 V, IC = 40 A
-
1.8
2.3
V
VFH
高端二极管电压
IF = 40 A
-
2.2
2.7
V
VFL
低端二极管电压
IF = 40 A
-
1.15
1.55
V
tON
开关时间
VPN = 400 V, VCC = 15 V, IC = 40 A
VIN = 0 V 5 V, 电感负载
-
500
-
ns
-
180
-
ns
-
500
-
ns
tC(OFF)
-
90
-
ns
trr
-
43
-
ns
Irr
-
6
-
A
1.8
2.0
2.2
m
-
-
250
A
tC(ON)
(注 4)
tOFF
RSENSE
电流感测电阻
ICES
集电极 - 发射极间漏电流
VCE = VCES
注:
4. tON 和 tOFF 包括模块内部驱动 IC 的传输延迟时间。 tC(ON) 和 tC(OFF) 指在内部给定的栅极驱动条件下, IGBT 本身的开关时间。详细信息,请参见图 4。
Irr
120% of IC
100% of IC
VCE
IC
90% of IC
10% of VCE
IC
10% of IC
10% of IC
VCE
VIN
10% of VCE
VIN
tON
trr
tC(ON)
tC(OFF)
tOFF
(a) Turn-on
(b) Turn-off
图 4. 开关时间的定义
©2011 飞兆半导体公司
FPDB40PH60B Rev. C3
5
www.fairchildsemi.com
FPDB40PH60B 用于两相无桥功率因数校正的 PFC SPM® 3 系列
电气特性
符号
项目
条件
IQCCL
VCC 静态电源电流
VCC = 15 V, IN = 0 V VCC - COM
VFOH
故障输出电压
VFOL
最小值 典型值 最大值 单位
-
-
26
mA
VSC = 0 V, VFO 电路:4.7 k 至 5 V 上拉
4.5
-
-
V
VSC = 1 V, VFO 电路:4.7 k 至 5 V 上拉
-
-
0.8
V
VSC(ref)
过电流保护触发电平
VCC = 15 V
0.45
0.50
0.55
V
UVCCD
电源电路欠压保护
检测电平
10.7
11.9
13.0
V
复位电平
11.2
12.4
13.2
V
UVCCR
tFOD
故障输出脉宽
CFOD = 33 nF (注 5)
1.4
1.8
2.0
ms
VIN(ON)
导通阈值电压
施加在 IN - COM 之间
3.0
-
-
V
VIN(OFF)
关断阈值电压
-
-
0.8
V
at TC = 25°C (见图 5)
-
50
-
k
at TC = 80°C (见图 5)
-
5.76
-
k
RTH
热敏电阻的阻值
注:
5. 故障输出脉宽 tFOD 取决于电容 CFOD 的值,可采用下面的近似公式进行计算:CFOD = 18.3 x 10-6 x tFOD[F]
R-T Graph
120
Resistance [k]
100
80
60
40
20
0
20
30
40
50
60
70
80
90 100 110 120 130
Temperature [C]
图 5. 内置热敏电阻的 R-T 曲线
推荐工作条件
符号
VI
项目
条件
最小值
典型值 最大值 单位
输入电源电压
施加在 R - S 之间
180
-
264
Vrms
VPN
输出电压
施加在 P - N 之间
-
280
400
V
VCC
控制电源电压
施加在 VCC - COM 之间
13.5
15
16.5
V
dVCC/dt
控制电源波动
施加在 IN - COM 之间
-1
-
1
V/s
PWM 输入信号
TC 100°C, TJ 125°C, 单个 IGBT
-
20
-
kHz
fPWM
©2011 飞兆半导体公司
FPDB40PH60B Rev. C3
6
www.fairchildsemi.com
FPDB40PH60B 用于两相无桥功率因数校正的 PFC SPM® 3 系列
控制部分
项目
条件
安装扭矩
安装螺钉:M3
器件平面度
见图 6
最小值 典型值 最大值
建议 0.62 N•m
重量
单位
0.51
0.62
0.72
N•m
0
-
+120
m
-
15.00
-
g
(+)
(+)
(+)
图 6. 平面度测量位置
©2011 飞兆半导体公司
FPDB40PH60B Rev. C3
7
www.fairchildsemi.com
FPDB40PH60B 用于两相无桥功率因数校正的 PFC SPM® 3 系列
机械特性和额定值
FPDB40PH60B 用于两相无桥功率因数校正的 PFC SPM® 3 系列
保护功能时序图
In p u t S ig n a l
In te rn a l IG B T
G a te -E m itte r V o lta g e
P3
UV
re se t
P5
C o n tro l S u p p ly V o lta g e
P2
UV
d e te c t
P6
P1
O u tp u t C u rre n t
P4
F a u lt O u tp u t S ig n a l
P1 : 正常工作:IGBT 导通并传导电流。
P2 : 欠压检测。
P3 : IGBT 栅极中断。
P4 : 故障信号产生。
P5 : 欠压复位。
P6 : 正常工作:IGBT 导通并传导电流。
图 7. 欠压保护
P5
In p u t S ig n a l
P6
In te rn a l IG B T
G a te -E m itte r V o lta g e
O C D e te c tio n
P1
P4
P7
O u tp u t C u rre n t
P2
O C R e fe re n c e
V o lta g e (0 .5 V )
S e n s in g V o lta g e
R C F ilte r D e la y
F a u lt O u tp u t S ig n a l
P3
P8
P1 : 正常工作:IGBT 导通并传导电流。
P2 : 过流检测。
P3 : IGBT 栅极中断 / 故障信号产生。
P4 : IGBT 缓慢关断。
P5 : IGBT 关断信号。
P6 : IGBT 导通信号:但是在故障输出有效的时间内, IGBT 不导通。
P7 : IGBT 关断状态。
P8 : 故障输出复位并启动正常工作。
图 8. 过流保护
©2011 飞兆半导体公司
FPDB40PH60B Rev. C3
8
www.fairchildsemi.com
+5 V
VTH
RTH
CSC
MCU
CFOD
VFO
or
Controller
IN(S)
IN(R)
COM
VCC
NTC
Thermistor
PR
S
CSC
R
CFOD
3-Phase
Inverter
VFO
IN(S)
OUT(S)
IN(R)
COM
N
OUT(R)
Shunt
Resistor
NSENSE
VAC-
VCC
图 9. 应用实例
注:
6. 关于过流保护,时间常数应在 3 ~ 4 s 的范围内进行选择。
©2011 飞兆半导体公司
FPDB40PH60B Rev. C3
9
www.fairchildsemi.com
FPDB40PH60B 用于两相无桥功率因数校正的 PFC SPM® 3 系列
Vac
FPDB40PH60B 用于两相无桥功率因数校正的 PFC SPM® 3 系列
封装轮廓详图
封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和
/ 或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件,尤其是其中涉及飞兆
公司产品保修的部分。
随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸:
http://www.fairchildsemi.com/dwg/MO/MOD27BA.pdf
©2011 飞兆半导体公司
FPDB40PH60B Rev. C3
10
www.fairchildsemi.com
FPDB40PH60B 用于两相无桥功率因数校正的 PFC SPM® 3 系列
©2011 飞兆半导体公司
FPDB40PH60B Rev. C3
11
www.fairchildsemi.com
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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