Is Now Part of
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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General Description
Fairchild's brand-new DC-AC module is designed for a power
stage that needs more compact design. And the Press-fit technology provides simple and reliable mounting. This module is optimized for the application such as solar inverter where a high
efficiency and robust design are needed.
Electrical Features
• High Efficiency
Package Code: F1
• Low Conduction and Switching losses
• Low VCE(sat) : 1.1 V typ. @ Ic = 30 A
• Low RDS(ON) : 90 mΩ max.
• Fast Recovery Body Diode
Mechanical Features
• Compact size : F1 Package
• Press-fit contact technology
Applications
• Solar Inverter
Certification
• UL approved (E209204)
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
TC = 25oC unless otherwise noted.
Description
Rating
Units
620
V
27
A
Rectifier Diode
VRRM
Peak Repetitive Reverse Voltage
IFav
Diode Continuous Forward Current
@ TC = 80°C
IFSM
Diode Maximum Forward Surge Current
245
A
I2 t
I2t value
300
A 2s
PD
Maximum Power Dissipation
77
W
TJ
Operating Junction Temperature
-40 to +150
°C
©2014 Fairchild Semiconductor Corporation
FPF1C2P5MF07AM Rev. C1
@ TC = 25°C
1
www.fairchildsemi.com
FPF1C2P5MF07AM F1 Module solution for PV-Application
July. 2014
FPF1C2P5MF07AM
F1 Module solution for PV-Application
Symbol
TC = 25°C unless otherwise noted. (Continued)
Description
Rating
Units
High-side IGBT
VCES
Collector-Emitter Voltage
620
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Collector Current
ICM
Pulsed Collector Current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
PD
Maximum Power Dissipation
TJ
Operating Junction Temperature
@ TC = 80°C
39
A
90
A
@ TC = 80°C
22
A
90
A
@ TC = 25°C
231
W
-40 to +150
°C
620
V
Low-side MOSFET
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Continuous Drain Current
± 20
V
@ TC = 25°C
36
A
@ TC = 80°C
27
A
Limited by TJ max.
IDM
Pulsed Drain Current
156
A
IS
Continuous Source-Drain Forward Current
36
A
ISM
Maximum Pulsed Source-Drain Forward Current
156
A
PD
Maximum Power Dissipation
250
W
TJ
Operating Junction Temperature
-40 to +150
°C
TSTG
Storage Temperature
-40 to +125
°C
2500
V
@ TC = 25°C
Module
VISO
Isolation Voltage
Iso._Material
Internal Isolation Material
FMOUNT
Mounting Force per Clamp
Weight
@ AC 1MIN
Al2O3
20 to 50
Typ.
Creepage
Clearance
N
22
g
Terminal to Heatsink
11.5
mm
Terminal to Terminal
6.3
mm
Terminal to Heatsink
10.0
mm
Terminal to Terminal
5.0
mm
Package Marking and Ordering Information
Device
Device Marking
Package
Packing Type
Quantity / Tray
FPF1C2P5MF07AM
FPF1C2P5MF07AM
F1
Tray
22
©2014 Fairchild Semiconductor Corporation
FPF1C2P5MF07AM Rev. C1
2
www.fairchildsemi.com
FPF1C2P5MF07AM F1 Module solution for PV-Application
Absolute Maximum Ratings
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
-
-
1.9
V
Rectifier Diode
VF
Diode Forward Voltage
IF = 30 A
-
1.45
-
V
IR
Reverse Leakage Current
VR = 620 V
-
-
25
μA
RθJC
Thermal Resistance of Junction to Case
per Diode
-
-
1.62
°C/W
IF = 30 A
@TC = 125°C
High-side IGBT
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0 V, IC = 1 mA
620
-
-
V
ICES
Collector Cut-off Current
VCE = VCES, VGE = 0 V
-
-
25
μA
IGES
Gate-Emitter Leakage Current
VGE = VGES, VCS = 0 V
-
-
2.5
μA
On Characteristics
VGE(th)
Gate-Emitter Threshold Voltage
VGE = VCE, IC = 30 mA
4
5.7
7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 30 A, VGE = 15 V
-
1.1
1.6
V
IC = 30 A, VGE = 15 V @TC = 125°C
-
1.0
-
V
IC = 60 A, VGE = 15 V
-
1.4
-
V
Switching Characteristics
Qg
Total Gate Charge
VDS = 380 V, VGS = 0V...+15 V,
ID = 30 A
-
214
-
nC
RθJC
Thermal Resistance of Junction to Case
per IGBT
-
-
0.54
°C/W
* Note : High-side IGBT is optimized for line frequency switching such as 50/60 Hz.
High-Side FWD
VFM
Diode Forward Voltage
IF = 15 A, VGS = 0 V
-
1.75
2.25
V
trr
Reverse Recovery Time
-
30
-
ns
Irr
Reverse Recovery Current
IF = 15 A
dIF/dt = 1650 A/μs
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
Qrr
Reverse Recovery Charge
RθJC
Thermal Resistance of Junction to Case
©2014 Fairchild Semiconductor Corporation
FPF1C2P5MF07AM Rev. C1
IF = 15 A
dIF/dt = 1500 A/μs @TC = 125°C
per Diode
3
-
27
-
A
-
405
-
nC
-
43
ns
-
38
-
A
-
814
-
nC
-
-
1.61
°C/W
www.fairchildsemi.com
FPF1C2P5MF07AM F1 Module solution for PV-Application
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
620
-
-
V
-
-
25
μA
2.5
μA
3.8
5.3
V
Low-Side MOSFET
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero Gate Voltage Drain Current
VDS = 620 V, VGS = 0 V
IGSS
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
On Characteristics
VGS(th)
Gate-Source Threshold Voltage
VGS = VDS, ID = 250 mA
RDS(ON)
Static Drain-Source On-Resistance
ID = 27 A, VGS = 10 V
-
-
90
mΩ
ID = 27 A, VGS = 10 V @TC = 125°C
-
135
-
mΩ
VSD
Source-Drain Diode Forward Voltage
2.7
ID = 47 A, VGS = 10 V
-
76
-
mΩ
ISD = 27 A, VGS = 0 V
-
-
1.5
V
ISD = 47 A, VGS = 0 V
-
1.3
-
V
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
EON
Turn-On Switching Loss per Pulse
EOFF
Turn-Off Switching Loss per Pulse
td(on)
Turn-On Delay Time
tr
Rise Time
VCC = 380 V
ID = 27 A
VGS = 10 V
RG = 10 Ω
Inductive Load
TC = 25°C
VCC = 380 V
ID = 27 A
VGS = 10 V
RG = 10 Ω
Inductive Load
TC = 125°C
-
57
-
ns
-
14
-
ns
-
240
-
ns
-
20
-
ns
-
440
-
μJ
-
113
-
μJ
-
53
-
ns
-
16
-
ns
-
257
-
ns
-
20
-
ns
-
719
-
μJ
td(off)
Turn-Off Delay Time
tf
Fall Time
EON
Turn-On Switching Loss per Pulse
EOFF
Turn-Off Switching Loss per Pulse
-
124
-
μJ
Qg
Total Gate Charge
VDS = 380 V, VGS = 0V...+10 V,
ID = 27 A
-
155
-
nC
RθJC
Thermal Resistance of Junction to Case
per Chip
-
-
0.5
°C/W
©2014 Fairchild Semiconductor Corporation
FPF1C2P5MF07AM Rev. C1
4
www.fairchildsemi.com
FPF1C2P5MF07AM F1 Module solution for PV-Application
Electrical Characteristics TC = 25°C unless otherwise noted. (Continued)
Fig 1. Typical Output Characteristics - IGBT
Fig 2. Typical Output Characteristics - IGBT
90
90
20 V
15 V
12 V
10 V
8V
60
VGE =
IC, Collector Current [A]
IC, Collector Current [A]
VGE =
30
60
20 V
15 V
12 V
10 V
8V
30
o
o
TC = 25 C
0
0.0
0.5
1.0
1.5
TC = 125 C
0
0.0
2.0
0.5
VCE, Collector-Emitter Voltage [V]
Fig 3. Typical Saturation Voltage Characteristics
- IGBT
ZθJC(t), Thermal Response [°C/W]
IC, Collector Current [A]
0
0.0
0.5
1.0
1.5
1
0.5
0.1 0.3
t2
0.02
0.01
0.01
0.005
Single Pulse
1E-4
* Notes :
1. ZθJC(t) = 0.54 °C/W Max.
2. Duty Factor, D = t1/t2
3. TJ - TC = PDM*ZθJC(t)
1E-3
0.01
0.1
1
t1, Rectangular Pulse Duration [sec]
Fig 5. Typical Forward Voltage Drop vs.
Forward Current - High-Side FWD
Fig 6. Transient Thermal Response Curve
- High-Side FWD
90
10
TC = 25°C
TC = 80°C
TC = 125°C
ZθJC(t), Thermal Response [°C/W]
IF, Forward Current [A]
t1
0.05
1E-3
1E-5
2.0
PDM
0.1
VCE, Collector-Emitter Voltage [V]
60
45
30
15
0
0.0
2.0
10
Common Emitter
VGE = 15 V
TC = 25°C
TC = 80°C
TC = 125°C
30
75
1.5
Fig 4. Transient Thermal Response Curve - IGBT
90
60
1.0
VCE, Collector-Emitter Voltage [V]
0.5
1.0
1.5
2.0
2.5
VF, Forward Voltage [V]
©2014 Fairchild Semiconductor Corporation
FPF1C2P5MF07AM Rev. C1
3.0
1 0.5
0.3
0.1
t1
0.02
0.01
0.01
0.005
Single Pulse
1E-3
1E-5
3.5
PDM
0.1 0.05
1E-4
t2
* Notes :
1. ZθJC(t) = 1.61 °C/W Max.
2. Duty Factor, D = t1/t2
3. TJ - TC = PDM*ZθJC(t)
1E-3
0.01
0.1
1
t1, Rectangular Pulse Duration [sec]
5
www.fairchildsemi.com
FPF1C2P5MF07AM F1 Module solution for PV-Application
Typical Performance Characteristic
Fig 7. On-Region Characteristics - MOSFET
Fig 8. On-Resistance Variation
vs. Drain Current and Gate Voltage - MOSFET
160
160
0.20
ID, Drain Current[A]
ID, Drain Current[A]
RDS(ON) [Ω],
100
100
8080
6060
4040
2020
* Note:
* Note:
250
pulse
test
μsμs
pulse
test
1.1.250
0
0 0
5 5
1010
1515
Drain to Source On-Resistance
VGS = 10 V
VGS = 20 V
VGSV=
GS = 20V
20 V
15V15 V
140
140
10V10 V
8V 8 V
120
120
6V 6 V
0.16
0.12
0.08
0.04
2020
0
40
VDS,VDrain-Source
, Drain-Source
Voltage[V]
Voltage[V]
DS
Fig 9. On-Resistance Variation
vs. Temperature - MOSFET
160
150
TC = 25°C
TC = 80°C
TC = 125°C
2.00
IS, Reverse Drain Current [A]
Drain to Source On-Resistance
RDS(ON) [Ω], [Normalized]
120
Fig 10. Body Diode Forward Voltage Variation
vs. Source Current and Temperature - MOSFET
2.25
1.75
1.50
1.25
1.00
0.75
0.50
-50
* Notes:
1. VGS = 10 V
2. ID = 27 A
-25
0
25
50
75
100
125
TC, Case Temperature [°C]
150
0.5
60
30
0.6
0.9
1.2
1.5
1.8
2.1
Fig 12. Turn-On Loss vs. Gate Resistor Values
- MOSFET
1.4
* Notes:
1. with an inductive load
2. VDS = 380 V, ID = 27 A
3. VGS = 10 V
Eon, Turn-on Loss [mJ]
1.2
TC = 125°C
0.3
90
VSD, Body Diode Forward Voltage [V]
* Notes:
1. with an inductive load
2. VDS = 380 V, ID = 27 A
3. VGS = 10 V
0.4
120
0
0.3
175
Fig 11. Turn-Off Loss vs. Gate Resistor Values
- MOSFET
Eoff, Turn-off Loss [mJ]
80
ID, Drain Current [A]
TC = 25°C
0.2
0.1
TC = 125°C
1.0
0.8
0.6
TC = 25°C
0.4
0.2
0.0
0
5
10
15
20
25
Rg, Gate Resistance [Ω]
©2014 Fairchild Semiconductor Corporation
FPF1C2P5MF07AM Rev. C1
30
0.0
35
6
0
5
10
15
20
25
Rg, Gate Resistance [Ω]
30
35
www.fairchildsemi.com
FPF1C2P5MF07AM F1 Module solution for PV-Application
Typical Performance Characteristic (Continued)
Fig 13. Turn-Off Loss vs. Drain Current - MOSFET
Fig 14. Turn-On Loss vs. Drain Current - MOSFET
200
1.0
* Notes:
1. with an inductive load
2. VDS = 380 V, ID = 27 A
3. VGS = 10 V
4. Rg = 10 Ω
120
0.8
Eon, Turn-on Loss [mJ]
Eoff, Turn-off Loss [uJ]
160
TC = 125°C
80
TC = 25°C
40
0
0
5
10
15
20
25
30
ID, Drain Current [A]
TC = 125°C
0.4
TC = 25°C
0.2
0.0
0
5
10
15
20
25
ID, Drain Current [A]
30
35
Fig 16. Typical Forward Voltage Drop vs.
Forward Current - Rectifier Diode
1
90
0.5
75
0.1 0.3
IF, Forward Current [A]
ZθJC(t), Thermal Response [°C/W]
0.6
35
Fig 15. Transient Thermal Response Curve
- MOSFET
0.1
0.05
0.01
* Notes:
1. with an inductive load
2. VDS = 380 V, ID = 27 A
3. VGS = 10 V
4. Rg = 10 Ω
0.02
PDM
t1
0.01
0.005
Single Pulse
1E-3
1E-4
1E-5
1E-4
t2
* Notes :
1. ZθJC(t) = 0.5 °C/W Max.
2. Duty Factor, D = t1/t2
3. TJ - TC = PDM*ZθJC(t)
1E-3
0.01
0.1
TC = 25°C
TC = 80°C
TC = 125°C
60
45
30
15
0
0.0
1
t1, Rectangular Pulse Duration [sec]
0.5
1.0
1.5
VF, Forward Voltage [V]
2.0
2.5
Fig 17. Transient Thermal Response Curve
- Rectifier Diode
ZθJC(t), Thermal Response [°C/W]
10
1 0.5
0.3
0.1
PDM
0.1 0.05
t1
0.02
0.01
1E-3
1E-5
0.01
0.005
Single Pulse
1E-4
t2
* Notes :
1. ZθJC(t) = 1.62 °C/W Max.
2. Duty Factor, D = t1/t2
3. TJ - TC = PDM*ZθJC(t)
1E-3
0.01
0.1
1
t1, Rectangular Pulse Duration [sec]
©2014 Fairchild Semiconductor Corporation
FPF1C2P5MF07AM Rev. C1
7
www.fairchildsemi.com
FPF1C2P5MF07AM F1 Module solution for PV-Application
Typical Performance Characteristic (Continued)
FPF1C2P5MF07AM F1 Module solution for PV-Application
Internal Circuit Diagram
DC+
D1
D2
IN2
DC+
G1
G2
E1
E2
IN2
IN1
OUT1
OUT2
OUT1
OUT2
IN1
D4
D3
GM1
GM2
SM1
SM2
N1
N1
RT
RT
N2 TN2
RT
R
N2 N2
RT RT
Package Outlines [mm]
©2014 Fairchild Semiconductor Corporation
FPF1C2P5MF07AM Rev. C1
8
www.fairchildsemi.com
FPF1C2P5MF07AM F1 Module solution for PV-Application
©2014 Fairchild Semiconductor Corporation
FPF1C2P5MF07AM Rev. C1
9
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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